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진성 최
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2 , RAM (Random Access Memory ) ROM (Read Only M em ory ). RAM RAM DRAM (Dyn am ic RAM ) SRAM (St atic RAM ). DRAM. SRAM DRAM. ROM ROM. SRAM RA M RA M RA M DRAM PROM OT PROM EPROM R OM EEP ROM F LA SH Mask ROM

3 PROM (Program able ROM ) ROM. PROM OT PROM (One T ime PROM ), EPROM (Er as able PROM ), EEPROM (E lectrically Er as able PROM ). OT P EPROM in - sy stem,. one - tim e- progr amm able". OT P. EPROM,.. RAM. EPROM EEPROM. ( ). ( ).. EEPROM

4 2-2. EEPROM.. EEPROM EEPROM EEPROM 1,000 SRAM

5 EEPROM. CPU., EEPROM CPU Off. EEPROM. EEPROM EEPROM 2-3. (a), (b ).,. (a) 1V, ( ) 1V. (b ). 6V. 6V

6 EEPROM.. (a) 1 (b )

7 , EEPROM

8 2-5. EEPROM (a) M OS. 2-5(b ),, 2-5(c),.,

9 /..,., 1984 IEDM (Intern ation al E lectron Device M eeting ) T OSHIBA (F.M asuoka et al., "A n ew F lash E EPROM cell u sing triple poly silicon technology ") , EPROM UV ( ). UV - PROM UV ( ) EEPROM., ( )

10 .,. ( ).. DRAM.,. EEPROM ( ), 1 2, 1..,. EEPROM 1., (sector ),

11 ., DRAM EPROM, 2 EEPROM 1, EPROM EEPROM, F lash EEPROM. 2-6., DRAM SRAM

12 2-6. PROM (Program ROM) DRAM Bit Cost. /. (P age) Multiple Bytes. Random, Serial, P age. F - N. F - N

13 High density EPROM DRAM FLASH EEPROM SRAM Nonvolatility Electrical Re- writability Nonvolatility High density I- T cell Low Power In- system rewritability Bit alterability Fast read Fast write High endurance Low cost Single- power supply UV- Hard Floppy Flash DRAM SRAM EEPROM EPROM Disk Disk O X X O O O O O O X X O O X O X X X O X X O X X O O X X O O O O X O O X O O O X O O O O O O O X X O O O O O O O O O O O X O O O O X X O O O O O O O X O O

14 EEPROM, Re ad D ata D at a B it W rit e Co s t DRAM 1T r +1Cap 10ns 10ns 100 W 1 ( ) 4T r + SRAM 2 10ns 10ns 100 W 1 ( ) EPROM 1T r 100ns s 1.2 EEPROM Flash Memory 2T r + 100ns ( ) 1T r 100ns + 10m s s 1 EEPROM, 2-3.,,

15 2-3. 3V 5V/ 12V 5V/ 12V 5V/ 12V(3V ) 5V 5V (3V ) 3V (Size) , B and- to- Band,.,,.,,

16 N OR NAND, N OR AND, DINOR (Divided Bir - line NOR ), V GA (Virtu al Ground Arr ay ). N OR. NAND. AND DINOR

17 N OR. NAND. 2-4 NAND N OR NAND NOR N A N D N OR /, (Random Access ), /. (Serial Acces s T ype) (HDD ) (, CPU RAM ) ( )

18 N A N D EPROM Oxide- Nitride- Oxide (ONO) DRAM, NOR 80%. NAND EEPROM 2-10 / 1,

19 2-9. NAND T I 1975 U SP M ask ROM NAND

20 (a), 0V, P - w ell 23V. F low lw e- Nordheim., - 3V. F - N. J = A E 2 ex p ( - B / E ) J, E, A, B. (a) (b ) (c) NAND ( ) 2-11(b ), 21V, P - w ell 0V. 2V. 0 0V, 1 10V. 10V

21 , NAND. 2-11(c), 5V pre- ch arge, 0V, F - N (Couping Ratio), V cc., Read F ail NAND NAND 2-12 NAND, T riple Well(pocket p- well), CMOS Process, 2- Poly, 1- metal

22 Process

2-12. NAND 2-4 - 1-7. NAND NAND 16M KM 29N 16000T S.

23 2-12. NAND NAND NAND 16M KM 29N 16000T S. KM 29N 16000T S 2M 8Bit NAND 5V, (2M +64K ) 8Bit. (256+8) 8Bit., Bytes s, 80n s.,,. 44(40) T SOP

24 KM 29N 16000T S [Comm and A ddress Read/ W rite],, I/ O#. I/ O# 1 2, 3. 64Bytes ((256+8) 8Bit s ) 1, 16., 16P ages = 16 (256+8)Bytes (4K +128)Bytes , 16MBit. 2-5 KM29N16000T S, 2-6 KM29N16000T S. (En able). CEB CEB. NAND. NAND

25 2-13. NAND 2-5. KM29N16000TS 1Cy c le 1Cy c le 2Cy cle Sequential Data Input 80h Block Er ase 60h D0h Read 1 00h Multi- Block Erase 60h 60h Doh Read 2 50h Erase Suspend B0h Read 3 90h Erase Resume D0h Reset FFh Read Status 70h Page Program 10h Read Register60h E0h DRAM

26 DRAM KM29N 16000TS CLE A LE CE B W EB REB W P B I/ O# H L - R H Din L H - R H Din L H - H F Dout L L - R H Din L L - H F Dout Z Z R : Low and Rising Edge F : High and Failing Edge (3Cycle) (3Cycle) Read&Data Program, Erase, Busy State Write Protect N O R N OR. EEPROM 1 M OS. 2. ( 10nm )..,

27 NOR , 5V, 0V, 12V,., NOR

28 V,. 1 5V, , 12V, 0V. P ( ) (> 10MV/ cm ), F - N... /.,

29 2-16. NOR / 2-17 / /. 5V, (- ) NOR / /.,

30 2-18, - 18V (- ), ( ) 18V (+).. F - N.. /., F - N., NOR

31 (V G )- (Id ) (a)., (b ) 1V., 7V (c) V 1 On - Cell( )

32 NO R N OR,. NOR XIP (E xecute In Place : ) F 016XS 30 33M Hz. NOR 64Kbyte 1 2sec,.,. HN28F 1600 NOR (Sector ) , 32, 15. RAM NOR 7 10 / Byte. 16MBit 2 256RAM

33 3 / Byte 1 2. HN28F D IN O R DINOR DINOR NOR NOR. NOR. 25%. 256Byte, 3.3V

34 F - N, F - N DINOR A N D (A C E E ) AND 2-21, 2-25 N OR NAND. AND 32MBit 512Byte AND (ACEE)

35 H i C HiC 2-22,, / (Colum n/ Row ) (Redundancy )., Positive, Band - to- Band. (W indow ). (a) (b ) HiC (Source Injection - Comm on Ground) 2-23, CHE, Poly - to- Poy

36 2-5. 1M 2-24.,, M

37 NOR ( EPROM ),, NAND (,,... ), DINOR, AND

38 NAND F - N NOR., NAND 2-26, 0V 15-20V V., (,... )

39 2-7. ( ) ( ) 2-26 Vcc. SSL Vcc Vpass, Vpgm, S SL Off 8-10V Self- Boosting. 8-10V - F - N T hreshold Shift S e lf - Boos ted

40 NAND / (Verify ) DCB SBL ( / 0/ Vcc ). BLSHF Fully ON blsh (Vth 1.8V ) 0V. SBL Off, Iref. ( "0"), 1V 0V Iref. Vth ( 1.8V ) 1blsh 0V Shut - Off X, Iref X Vcc

41 2-28. NAND Iref X Vcc 0 Vcc 0V

42 2-29., ( "1") - 3V 0V Iref. 0.6V, blsh ON. Iref X 0.6V 0 0.6V (< Vth ) Off

43 (Re dunda ncy) 4M NAND - EEPROM, 2 (Row ) 4 (Column ). 1 1NAND 512, 8. NOR EPROM 1 (1- ), NAND ( ) 1NAND., NOR, NAND. 1 8I/ O 1, ,. -.,.. NOR NAND

44 (DRAM, SRAM ) ( 4.5V ). NAND NOR

45 Vcc 2-32 Dick son ' s Charge Pum p" D ic ks o n's 2-32 Dickson H.V., C Cp ( C > > Cp). Vin, 2-32, V out Vout EEPROM

46 (Endur ance), /.,, Row Vpp, 0.. 5m s, 10m s 10, , /. EEPROM Vpp Vpp /..., Vpp Screening,.,

47 ., 0V,, 1V, 1 1V, 0 1V., ,,

48 SAS (S e lf Align e d S ou rc e ). SA S (Self Aligned Source) ON O.. ONO

49 (A c c e s s ) ns. - : n s - : 2 10 / Byte - : 1.5 sec/ - / : 10 ( ) NOR., 0.18 m 256M, 0.15 m 1G

50 ... 3V 1.8V., DC/ DC , NOR NAND 10. EPROM 10 2, EEPROM 10 5, EEPROM M, 256M, 1G

51 NOR, Band - to- Band. NAND Vpgm Vpass , (retention )

52 ,. EEPROM. (Endur ance) N OR, NAND EEPROM CHE NOR Band - to- Band. N OR (Vth ) M OS Si/ SiO 2 M OS.,,

53 M OS,,, ONO 3-6MV/ cm.,. N a+.,, Inter Later Dielectric (ILD) BP SG P SG N a

54 EW S 1 2% ( ), 1/ 2 1/ 4. :,, F DD HDD M.,

55 EP RO M EPROM /. EPROM, /. EPROM,., MASK- ROM, EPROM,.,. OS. 64K 256K., 4M, 16M

56 OS..,,, PCM CIA - A T A... 20M 40M. A T A PC,,,

57 , A T A. A T A. DOS F A T.. (F F S - 2, F T L 2 ),. A T A.. M. FAX,,., (FF S - S F T L ), A T A

58 2-9.,,,. 2-8, D A T A P ROCE S S IN G T E LE COM M U N ICA T IO - Computer Centr al Office Sw itch M ain Fr am e PBX/ LAN/ Cellular/ PH S Super Cordless Phone Midr ange Dig. Answ ering M achine W orkst ation F ax/ Public Phone Handheld P ager Subnotebook M odem Laptop Desktop IN D U S T RIA L Deskside T ester M obile Com puter M edical Instrum ent s V ending M achine OT HE R D A T A P ROCE S S IN G Hard Disk Driver CON S U M ER Optical Disk Driver Org anizer s P age Printer s Arcade Gam e/ Hom e Gam es Serial Printer s Gam e Soft/ HDT V/ Set T op Copier Box/ Instrum ent s W ord Processor K ar aoke/ CD ROM/ Digit al POS Cam er a Solid St ate Disk VT R/ DVD/ Cam corder s/ Voice F lash M em ory Cards Recoder s T RA N S P ORT A T ION Car N avig ation Air - bag

59 HDD, 2-34 HDD Plug Compatible.,, SCSI IDE PC HDD. IC., OS

60 .,, HDD (HDD Plug Compatible ) ,. HDD Plug Com patible HDD, OS,. IC PC. FF S (F lash File Sy stem ), M S - DOS V5.0 ROM (OS )

61 / Post,. RF Post RF. RF.., RF EEPROM/. RF RF

62 B IO S / PC BIOS (B asic Input Output Sy stem ). BIOS PC U ser. (Boot Block ) (P ar am eter Block M ain Block ) BIOS. EPROM OPT., A SSP PC (F DD ) (HDD), PC SRAM. DRAM. RAM RAM PROM. RAM. RAM

歯320.PDF

歯320.PDF Thermo Orion Model 320 PerpHecT Meter I. 1 II. A. 2 B. Keypad 3 III. A. 4 B. 4 IV. A. 5 B. 5 C. setup 6 V. ph A. 7 B. ph 8 VI. LogR ph A. 10 B. LogR? 11 C. LogR 12 VII. mv/ ORP/ A. mv 13 B. (, ) 13 VIII.