01-42(6)-06(김창일).fm

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1 251 w t œwz J. Kr. Inst. Surf. Eng. Vl. 42, N. 6, < > w v w TaN ƒ p, ½ w,, ½ w»œw The Study f the Etch Characteristics f the TaN Thin Film Using an Inductively Cupled Plasma D-Seung Um, Seung-Han Kim, Jng-Chang W, Chang-Il Kim Schl f Electrical and Electrnics Engineering, Chung-Ang University (Received Nvember 23, 2009 ; revised December 21, 2009 ; accepted December 30, 2009) Abstract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eywrds: Etch, TaN, Plasma, ICP, BCl 3 /Ar, O l p p(ti) k (Jack kilby) w wù e j» š, e ñ. l(intel) œ š 1965 e ƒ 18 2 ƒw e tw š, x ¾ e ƒ ƒwš. ù p l j» p l p(gate) w ù w š, e ü p lƒ (Al) w» w. w w» w Crrespnding authr. w» w š, p l w w š- (high-k) š. š x w e š wš 1,2). p l p j»ƒ, ƒ w š, û. ù p p y (SiO 2 ) l ƒ g w. p Ë l wš û x w š- (high-k thin film) w ƒ w 3). š- w» p w» /š- p l ƒ y w š 4,5). w x ûš, w û š.»

2 252 /w t œwz 42 (2009) (damascene) œ w (Via)ù fk(cntact) y(hle) w œ 6). ù y ƒ š y v 1,2). š y TaN, TiN, WN y 1,2,7,8). y TaN TiN /š-» ƒ w š 9,10). œ ƒ w œ wù. p l j»ƒ p s w, p s s w. yƒ w v w ƒ f š ƒ w š 11). BCl 3 /Ar O 2 ƒ ƒ w v (ICP: Inductively cupled plasma) TaN ƒ p š, RF, š œ y ƒ p. TaN t yw XPS(X-ray phtelectrn spectrscpy) w. 2. x x w TaN/SiO 2 /Si substrate TaN Ì 1000 Å. TaN k y w» w j SiO 2 PR(Pht Resist). x ƒ e w v (ICP) l w ww. ƒ e x (Chamber) 26 cm š, ü 9cm. v x w» w 3.5z ¼ g lùƒ (quartz windw) w ü š, lù w» w MHz q ƒ RF. w v w» w MHz q RF. ü mechanical pump turb-mlecular pump w 10 6 Trr¾ w š, thrttle valve w œ w.» œ 500 W RF, 100 V w, 15 mtrr œ, 40 C»q š BCl 3 (6 sccm)/ar(14 sccm) ƒ w. TaN ƒ ƒ ƒ œ y w š, depth prfiler(alpha-step 500, KLA Tencr) w ƒ d w. t yw y» w XPS(AXIS-HSI, KRATOS) ww. 3. m W RF, 100 V w, 2 Pa œ, 40 C»q š BCl 3 ƒ O 2 ƒ ƒw TaN ƒ PR ƒ k ùkü. BCl 3 ƒ 3 sccm O 2 ƒ ƒw ƒ nm/min ƒ ƒ ùkþ. t 1 yw Gibb's free energy 12). t 1 TaN Cl e Oxygen w yw ƒ z, TaCl 5 TaOCl 3 TaO 2 Cl ƒ w. TaOCl 3 TaO 2 Cl Gibb's free energy j ùkü Oxygen ƒ w w., 3 sccm O 2 ƒ TaN TaO 2 Cl TaOCl 3 yw w ƒ. ù 6 sccm O 2 ƒ ƒ ƒ x. t 1, TaO 2 Cl TaOCl 3 š xk t w., ƒ O 2 ƒ w yw ù, Fig. 1. Etch rate f TaN thin film and selectivity f TiN t SiO 2 and PR as a functin f addictive O 2 gas in the BCl 3 /Ar gas chemistry.

3 /w t œwz 42 (2009) Table 1. The Gibb's free energy f the expected etching by-prducts 8QNCVKNG GVEJ RTQFWEVU 0QPXQNCVKNG TGUKFWGU 8QNCVKNG GVEJ RTQFWEVU 0QPXQNCVKNG TGUKFWGU 4GCEVKQP Gf (kj/ml) 4GCEVKQP G f (kj/ml) 6C%N=I? 6C1 %N=U? 6C%N =I? 6C%N =U? 6C0 6C%N =I? 6C1%N =U? 6C%N =I? 6C%N =U? 6C1%N =I? 6C%N =U? 6C%N =I? 6C 1 =U? O 2 ƒ ƒ w ü Ar + w, ƒ w š, yw z TaN t û ƒ (TaO 2 Cl, TaOCl 3 ) w TaN t w» q 12). TaN SiO 2 ƒ k O 2 (6 sccm)/ar(14 sccm) ƒ 3.1 ƒ š, TaN PR ƒ k O 2 ƒ ƒ ƒ BCl 3 ƒ 0.49 ƒ. O 2ƒ Si ƒ jš, PR ƒ» q. 2 O 2 ƒ, 100 V w, 2 Pa œ š 40 C»q RF y TaN ƒ PR ƒ k ùkü. RF 400 W l 700 W¾ y gš, 700 W RF nm/min ƒ ƒ ùkþ. RF lù ü ƒ w v ƒ š, RF ü v ƒw. v ƒ e ƒ ƒw w. 2 RF TaN ƒ v ƒ ƒw» 10,13,14). TaN SiO 2 ƒ k 600 W RF 3.48 ƒ š, TaN PR ƒ k û k. 3 O 2 ƒ, 500 W RF, 2 Pa œ š 40 C»q w y TaN ƒ SiO 2 PR ƒ k ùkü. w 50 V 200 V ¾ 50 V y gš, 200 V nm/min ƒ ƒ ùkþ. w ƒ w j ƒ. 3 f rl j TaN ƒ ƒw š 10,14). 50 V x. rl z ƒ û TaN t ƒ z Fig. 2. Etch rate f TaN thin film and selectivity f TaN t SiO 2 and PR as a functin f the RF pwer. Fig. 3. Etch rate f TaN thin film and selectivity f TaN t SiO 2 and PR as a functin f the DC-bias vltage.

4 254 /w t œwz 42 (2009) Fig. 4. Etch rate f TaN thin film and selectivity f TaN t SiO 2 and PR as a functin f the prcess pressure. j w» q. TaN SiO 2 ƒ k 100 V 3.1 ƒ š, TaN PR ƒ k û, k y. 4 O 2 ƒ, 500 W RF, 100 V w š 40 C»q œ y TaN ƒ PR ƒ k ùkü. 1 Pa œ nm/min ƒ ùküš, 2 Pa œ ƒ nm/min. ù 3 Pa œ x ùkû. œ y v ü w s³ w (mean-free path) w e. œ ü w s³ w š, g t j ƒ 15,16). 3 Pa œ Oxygen Cl e TaN w ƒ (TaOCl x ) w { û TaN t w š, œ w Ar rl ƒ + û wš ƒ w w» x w š. 2 Pa œ ƒ ƒ. œ û rl ƒ, ü ƒ ƒ ù e t w» ƒ, 1 Pa û œ w Ar + Fig. 5. XPS narrw scan spectra f the surface f the TaN thin film under O 2 /BCl 3 /Ar gas mixing rati. rl ƒ ƒw ù, TaN t w» ƒ û š q. TaN SiO 2 ƒ k 2 Pa 3.1 š, TaN PR ƒ k 1 Pa 2 Pa û. 5 O 2 /BCl 3 /Ar ƒ yw ƒ Áz TaN t XPS narrw scan spectra. ƒ BCl 3 /Ar ƒ ƒ z TaN t w, 28 ev 24 ev peak yƒ. TaN t y yd BCl 3 /Ar v š, Ta-Cl x ƒ t wš. 3 sccm O 2 ƒ ƒ ƒ ƒ w, O 2 ƒ w TaN t Ta x - O y xk ƒ w š, 6 sccm O 2 ƒ ƒ ƒ Ta-O x -Cl y xk ƒ w q. 4. w v (ICP) l w TaN ƒ x ww š, SiO 2 PR ƒ k w. BCl 3 (6 sccm)/ar(14 sccm) ƒ 3 sccm O 2 ƒ ƒ ƒ ƒ ùkþ. RF, w f ƒ ƒw š, œ 2 Pa ƒ ƒ ƒ ùkü. O 2 ƒ ƒ TaOCl x ƒ j, ƒ { p û»

5 /w t œwz 42 (2009) TaN t w» w rl z ƒ v w š q. š x 1. K. H. Min, K. C. Chun, K. B. Kim, J. Vac. Sci. Technl. B, 14(5) (1996) J. S. Park, M. J. Lee, C. S. Lee, S. W. Kang, Electrchem. Slid State Lett., 4 (2001) C M. L. Green, M. Y. H, B. Busch, G. D. Wilk, T. Srsch, T. Cnard, B. Brijs, W. Vandervrst, P. I. Raisanen, D. Muller, M. Bude, J. Grazul, J. Appl. Phys., 92 (2002) B. H. Lee, R. Chi, L Kang, S. Gpalan, R. Nieh, K. Onishi, Y. Jen, W. J. Qi, C. Kang, J. C. Lee, Characteristics f TaN Gate MOSFET with Ultrathin Hafnium Oxide (8Å-12Å), Internatinal Electrn Devices Meeting, (2000) C. S. Kang, H. J. Ch, Y. H. Kim, R. Chi, K. Onishi, A. Shahriar, J. C. Lee, J. Vac. Sci. Technl. B, 21(5) (2003) C. K. Hu, L. Gignac, S. G. Malhtra, R. Rsenberg, S. Bettcher, Appl. Phys. Lett., 78 (2001) A. Arranz, C. Palaci, Surf. Interface Anal., 29 (2000) P. Lamur, P. Fiux, A. Pnche, M. Nardin, M. F. Vallat, P. Dugay, J. P. Brun, N. Mreaud, J. M. Pinvidic, Surf. Interface Anal., 40 (2008) S. K. Yang, H. H. Kim, B. H. O, S. G. Lee, E. H. Lee, S. G. Park, S. P. Chang, J. G. Lee, H. Y. Sng, J. Krean Phys. Sc., 51 (2007) S M. H. Shin, M. S. Park, N. E. Lee, J. Kim, C. Y. Kim, J. Ahn, J. Vac. Sci. Technl. A, 24(4) (2006) K. Nakamura, T. Kitagawa, K. Osari, K. Takahashi, K. On, Vacuum, 80 (2006) W. S. Hwang, J. Chen, W. J. Y, V. Bliznetsv, J. Vac. Sci. Technl. A, 23(4) (2005) M. H. Shin, S. W. Na, N. E. Lee, J. H. Ahn, Thin Slid Films, (2006) F. A. Khan, L. Zhu, V. Kumar, I. Adesida, R. Okjie, Mat. Sci. Eng. B, 95 (2002) S. M. K, D. P. Kim, K. T. Kim, and C. I. Kim, Mat. Sci. Eng. B, 118 (2005) F. A. Khan and I. Adesida, Appl. Phys. Lett., 75 (1999) 2268.

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