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1 BIT/ST/LSCO/MgO Variations of Microstructures and Electrical Properties of BIT/ST/LSCO/MgO Epitaxial Films by Annealing

2 BIT/ST/LSCO/MgO Variations of Microstructures and Electrical Properties of BIT/ST/LSCO/MgO Epitaxial Films by Annealing

3 2003 2

9 Application Ferroelectric properties Ferroelectric material FRAM fatigue, imprint, retention, aging Pb-Family, SrBi 2 Ta 2 O 9, BaTiO 3, Bi 4-x La x Ti 3 O 12, YMnO 3, Bi 4 Ti 3 O 12 DRAM Infrared sensor Dieletric constant, Leakage current Piezoelectric coefficient SrTiO 3, Ba 1-x Sr x TiO 3, PbTiO 3 PZT, PbTiO 3, Pb 1-x La x (Zr y Ti 1-y ) x O 3 SAW filter SAW velocity LiNbO 3, LiTaO 3 Microwave device Electro-optic device Dieletric loss, Electro-optic coefficient Electro-optic coefficient, Band gap Ba 1-x Sr x TiO 3 BaTiO 3, KNbO 3, Pb 1-x La x (Zr y Ti 1-y ) x O 3

21 0 0 6 BIT FWHM : degree Phi ( φ )

22 Intensity (arb. unit ) BIT BIT BIT LSCO ST BIT BIT BIT MgO BIT ST LSCO BIT (f) (e) (d) (c) (b) (a) Diffraction angle ( 2q )

E 2 E 1 88nm A 1 114nm 81nm LSCO ST epoxy

25 E 2 E 1 88nm A 1 114nm 81nm LSCO ST epoxy BIT A 1 Volatilization of Bi (Thickness 4nm) ST A 2 MgO substrate 0016 BIT // 001 ST BIT 100nm 110 BIT // 010 ST 5nm 110 BIT // 010 ST 0016 BIT // 001 ST 11.8Å 12Å 3.4Å 13.1Å 3.5Å 3.53Å 13.3Å 13.3Å 13.4Å 2nm

26 Volatilization of Bi (Thickness 20nm) A 1 A 1 epoxy A 2 BIT BIT E 1 83nm E 2 ST LSCO 100nm ST MgO substrate 95nm 84nm 0016 BIT // 001 ST ST 110 BIT // 010 ST 14.56Å 14.5Å 14.3Å 14.2Å 2nm 0016 BIT // 001 ST 3.6Å 3.7Å 110 BIT // 010 ST 2nm 3.5Å

27 Volatilization of Bi (Thickness 24nm) 75nm A 1 epoxy A 2 BIT 133nm BIT 104nm ST A 1 LSCO E 1 E 2 ST 0016 BIT // 001 ST MgO substrate 100nm 110 BIT // 010 ST 5nm P 1 zone 5.16Å BIT BIT BIT P 2 zone 7.26 Å BIT 0016 BIT // 001 ST 2nm 110 BIT // 010 ST

28 71nm 107nm 94nm ST LSCO MgO substrate A 1 BIT 0016 BIT // 001 ST A 1 E 1 E 2 A 2 ST Volatilization of Bi (Thickness 21nm) 100nm 110 BIT // 010 ST 2nm BIT 110 BIT // 010 ST 0016 BIT // 001 ST 1nm

(Thickness 11nm) 5nm ST 14.6Å 14.6Å 14.6Å 13.

29 110 BIT // 010 ST 0016 BIT // 001 ST 81nm 117nm 94nm BIT D 1 epoxy A 2 A 1 MgO substrate epoxy A 1 100nm BIT ST LSCO E 1 E2 Volatilization of Bi (Thickness 11nm) 5nm ST 14.6Å 14.6Å 14.6Å 13.9Å 13.2Å D BIT // 001 ST 2nm 110 BIT // 010 ST

30 MgO substrate 110 BIT // 010 ST 0016 BIT // 001 ST LSCO ST BIT E 2 E 1 A 2 ST A 1 87nm 110nm A 1 71nm BIT epoxy Volatilization of Bi (Thickness 8nm) 100nm 5nm 0016 BIT // 001 ST 110 BIT // 010 ST 3.57Å 3.51Å 3.51Å 14.74Å 14.74Å 14.35Å 1nm

32 Å Å Å Å Å Å.

34 Bi SrO, rock saltlike layer Sr Bi

35 2 2 lattice misfit : ä a BIT or b BIT 2 a ST δ b b = BIT 2a 2a ST ST BIT ST c 8c δ c c = BIT 8c ST 8c ST

36 ST 002 ST Z ST [ ] ST 020 Z ST [ ] ST Z ST [ ] Z ST [ ] ST ST Z ST [ ] Z ST [ ]

37 BIT b / 2 = b ST Perovskite unit (Bi 2 O 2 ) 2 + layer Perovskite unit c BIT =8c ST (Bi 2 O 2 ) 2 + layer Perovskite unit c BIT Bi Oxygen b BIT 110 BIT // 010 ST b BIT a ST a BIT b ST Sr Oxygen

38 d BIT c d BIT b Lattice misfit ( d ) Annealing time ( min )

41 Bi 2O 2 layer O Bi layer by Localized Sr Insertion rock salt like Bi SrO, rock salt Bi Bi 2O 2 layer Substitution of Bi by Sr Bi 2O 2 layer Sr/Bi Sr/Bi Bi 2O 2 layer

43 (a) E 1 E 2 Sr L Sr L Bi L Bi L Bi L Bi L Sr L Bi L (b) E 1 E 2 (c) E 1 E 2 (d) E 1 E 2 (e) E 1 E 2 (f) E 1 E 2

44 Sr in BIT ( Atomic% ) Sr in BIT Bi in ST Annealing time ( min ) Bi in ST ( Atomic% )

46 ST ST

47 Dielectric constant Dielectric loss (f) (e) (d) (c) (b) (a) Frequency [ khz ] Frequency [ khz ] (f) (e) (d) (c) (b) (a)

51 Relative dielectric constant( 1 / e r ) e r = C = A * X + B Parameter Value Error B E-4 A E-4 e r = e r = Volume fraction of ST phase

52 Dielectric constant Measured at 100kHz Calculated from eq(1) Annealing time ( min ) 60

54 V 8V 10V 12V 14V 16V 6V 8V 10V 12V 14V 16V V 8V 10V 12V 14V 16V 6V 8V 10V 12V 14V 16V V 8V 10V 12V 14V 16V V 8V 10V 12V 14V 16V

55 Pr [ ìc / cm 2 ] Ec [ kv / cm ] as-prepared min min min min hr

57 2 2

서강대학교 기초과학연구소대학중점연구소 심포지엄기초과학연구소

서강대학교 기초과학연구소대학중점연구소 심포지엄기초과학연구소 2012 년도기초과학연구소 대학중점연구소심포지엄 마이크로파센서를이용한 혈당측정연구 일시 : 2012 년 3 월 20 일 ( 화 ) 14:00~17:30 장소 : 서강대학교과학관 1010 호 주최 : 서강대학교기초과학연구소 Contents Program of Symposium 2 Non-invasive in vitro sensing of D-glucose in

歯김유성.PDF

歯김유성.PDF