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1 THE JOURNAL OF KOREAN INSTITUTE OF ELECTROMAGNETIC ENGINEERING AND SCIENCE. 214 Nov.; 25(11), ISSN (Print) ISSN X (Online) BCI Emulator BCI Probe Emulator Using a Microstrip Coupler 정원주 김소영 Wonjoo Jung SoYoung Kim 요약 Bulk Current Injection(BCI) Integrated Circuit(IC) Electromagnetic Compatibility(EMC). IEC part 3 BCI, RF. IC BCI IC 1 MHz 1, MHz., RF RF dbm, RF. Abstract Bulk Current Injection(BCI) test is a method of injecting current into Integrated Circuit(IC) using a current injection probe to qualify the standards of Electromagnetic Compatibility(EMC). This paper, we propose a microstrip coupler structure that can replace the BCI current injection probe that is used to inject a RF noise in standard IEC part 3 documented by International Electrotechnical Commission. Conventional high cost BCI probe has mostly been used in testing automotive ICs that use high supply voltage. We propose a compact microstrip coupler which is suitable for immunity testing of low power ICs. We tested its validity to replace the BCI injection probe from 1 MHz to 1, MHz. We compared the power[dbm] that is needed to generate the same level of noise between current injection probe and microstrip coupler by sweeping the frequency. Results show that microstrip coupler can inject the same level of noise into ICs for immunity test with less power. Key words: Bulk Current Injection, Current Injection Probe, Microstrip Coupler. 서론 Integrated Circuit(IC),. International Electrotechnical Commission(IEC) International Organization for Standar- 214 ( ) (No. NRF-214R1A2A2A16595). (College of Information and Communication Engineering, Sungkyunkwan University) Manuscript received July 24, 214 ; Revised October 2, 214 ; Accepted October 27, 214. (ID No ) Corresponding Author: SoYoung Kim ( ksyoung@skku.edu) 1164 c Copyright The Korean Institute of Electromagnetic Engineering and Science. All Rights Reserved.

2 마이크로스트립 커플러 구조를 이용한 BCI 프로브 Emulator 전류 주입 프로브 테스트 개념도 와 등가회로 모델 그림 2. (F-14) Fig. 2. BCI probe(f-14) and simple equivalent circuit model. 그림 1. BCI Fig. 1. BCI test diagram. 에서 기술하고 있다 특히 과 에서는 에서 까지의 주파수 에서 와 관련된 전도 내성 시험에 관해 기술하고 있으 며 에서는 테스트를 사 용한 전자부품의 전자파 내성 평가를 에서는 테스트를 사용한 내성 평가를 서술 하고 있다 테스트는 그림 과 같이 전류 주입 프로 브를 이용하여 에 연결된 와이어 에 유도성 결합으로 생긴 전류를 노이즈로 하여 본래의 신호에 주입시키는 테스트 기법이다. BCI 테스트에는 전류 주입 프로브와 측정 프로브 두 가지가 사용된다. RF 잡음을 주입하는 전류 주입 프로브 의 경우에는 수 백 수 천 만원에 달하는 장비 가격과 제 품 발주 후 실제 사용하기까지 상당한 시간이 소요되는 단점을 가지고 있다. 또한, BCI 테스트 방법은 전자파 내 성 테스트를 전통적으로 해오던 자동차용 반도체 테스트 에 사용되어 왔다. 따라서 실험에 사용되는 전류 주입 프 로브는 고 전압, 고 전력 테스트에 적합한 구조이다. 본 논문에서는 BCI 테스트 시 필요한 1 1, MHz 까지 주파수 범위에서 전류 주입 프로브의 기능을 비교 적 간단한 방법으로 대체할 수 있는 마이크로스트립 커 플러 구조를 제안하였다. 제안한 구조의 유효성을 테스트 규격에 정의된 주파수 영역 중 높은 영역인 1 1, MHz에서 비교 및 검증하였다. 또한 주파수에 따라 전류 주입 프로브를 통한 RF 잡음 인가와 마이크로스트립 커플러 구조로 만든 Emulator를 통한 RF 잡음 인가 시 규정한 노이즈를 얻는데 필요한 전 력을 dbm 단위로 측정, 비교하여 RF 잡음 주입 시험 결 과를 통해 BCI 프로브를 사용한 경우와 비교하였다. dization(iso) IEC 62132part 3 part 4 15 khz 1 GHz IC, Part 3 Bulk Current Injection(BCI), Part 4 Direct Power Injection(DPI). BCI 1 Device Under Test(DUT) [1] [3] Ⅱ. BCI Probe Emulator 그림 2의 사진은 FCC(Fisher Custom Communications Inc.) 社의 F-14 전류 주입 프로브이고, 크기는 내부 직경 4 mm, 외부 직경 127 mm, 높이 7 mm로 외부 메탈 케 이스 내부에는 도넛모양의 Ferrite core가 들어있는 구조 이다. 전류 주입 프로브에서 자기적 유도에 의해 발생한 전류 잡음이 주입되는 것을 이전 연구의 상호 인덕턴스 를 고려한 프로브의 등가회로 모델링 과정에서 확인할 수 있다. 본 논문에서 제안하는 커플러 구조는 그림 3에 나타내 었다. 비 유전율 4.7, 기판 두께.8 mm, 도체 두께.35 mm, loss tangent.18의 FR-4 기판을 사용했으며, 평행한 선로 간의 간격은.5 mm, 평행한 선로 구간의 길이는 15.7 mm이다. 마이크로스트립 커플러 구조의 포트에서 5 Ω 임피던스 매칭을 위하여 선로의 두께, 높이와 간격 은 고정 값으로 하여 실험과 시뮬레이션을 진행하였다. 마이크로스트립 결합 선로 구조의 커플링 특성을 높이고 자 상호 정전용량을 키우기 위해 선로 사이에 51 pf의 커패시터를 연결하였다. 커플러의 포트 1로 테스트에 이 [4],[5] 프로브 구조도 그림 3. BCI emulator Fig. 3. BCI probe emulator design. 1165

3 THE JOURNAL OF KOREAN INSTITUTE OF ELECTROMAGNETIC ENGINEERING AND SCIENCE. vol. 25, no. 11, Nov S-parameter [db] S11 S21-8 S31 S 그림 4. S- Fig. 4. S-parameter of microstrip line without capacitor. RF generator, 3. 2 RF DUT. 4 5 [6]. BCI emulator 3 (CST MWS) 1 1, MHz S- [7]. 4 (S 21 ) 2 db, (S 41 ) db pf S-parameter [db] S11 S21-4 S31 S 그림 5. (51 pf) S- Fig. 5. S-parameter of microstrip line after adding the coupling capacitor. 그림 6. Fig. 6. Equivalent circuit model of the proposed coupler. (S 41 ), S- 7 db. CST 6. RLC 51 pf 54.4 pf 5. pf 48.7 pf GHz 31 db Coupling(S 21 ) [db] pF Cap 3pF Cap 2pF Cap 1pF Cap Without Cap 그림 7. BCI emulator (S 21 ) Fig. 7. Coupling(S 21 ) of BCI probe emulator as magnitude of capacitor value. 1166

4 BCI Emulator Coupling(S 21 ) [db] Simulation Measurement 그림 8. BCI emulator (S 21 ) (51 pf ) Fig. 8. Comparison of measured and simulated S-parameter (S 21 ) for proposed BCI probe emulator(51 pf connection)..,. Vector Network Analyzer(VNA) S pf BCI emulator, 1 MHz 7 db. FCC(Fisher Custom Communications Inc.). F khz 4 MHz, F-14 1 khz 1 GHz. BCI emulator (S 11 ) (S 21 ) 1 MHz 4 MHz, 4 MHz 1 GHz MHz BCI emulator 6 7 db, 6 MHz BCI emulator. Reflection(S 11 ) [db] Coupling(S 21 ) [db] (a) (S 11 ) (a) Reflection(S 11 ) Emulator[51pF] F-13-1 F (b) (S 21 ) (b) Coupling(S 21 ) Emulator[51pF] F-13-1 F-14 그림 MHz BCI emulator S- Fig. 9. Comparison of S-parameter of BCI probe and BCI probe emulator in 1 4 MHz. F-14 7 db, 9 db. 7 BCI emulator 51 pf 5 pf F-14.. 실험및결과 11 BCI. 1167

5 THE JOURNAL OF KOREAN INSTITUTE OF ELECTROMAGNETIC ENGINEERING AND SCIENCE. vol. 25, no. 11, Nov Reflection(S11) [db] Emulator[5pF] F 반사 특성 (a) (S11) (a) Reflection(S11) Coupling(S21) [db] Emulator[5pF] F 커플링 특성 프로브 (b) (S21) (b) Coupling(S21) 에서 전류 주입 프로브와 의 파라미터 비교 테스트 시 전류 주입 프로브와 의 연결 그림 11. BCI DUT Fig. 11. The connection of BCI probe and DUT for BCI test. 그림 , MHz BCI emulator SFig. 1. Comparison of S-parameter of BCI probe and BCI probe emulator in 4 1, MHz. 위에서 연결되어 있다. DUT는 VDD(전원전 압) 1.2 V에서 동작하는 IC의 인버터 체인으로 구성된 I/O 버퍼이다. 전류 주입 프로브에 연결된 동축 케이블을 통 해 RF generator로부터 출력되는 RF 잡음은 LISN(Line Impedance Stabilization Network)을 통과하고 전류 주입 프 로브를 관통하는 VDD에 섞여 DUT의 VDD Pad에 연결 된다. 그림 12에서는 전류 주입 프로브 대신에 BCI 프로브 emulator를 이용하여 연결하였다. RF 잡음은 포트 1을 통 해 입력되고, BCI 프로브 emulator의 마이크로스트립 결 합선로 사이에 연결된 커패시터를 통해 반대편 선로로 전달되어 포트 3을 통해 입력되는 전원 신호(DC 1.2 V)에 GND plane 1168 프로브 emulator를 이용한 BCI 테스트 시 포트 연결 그림 12. BCI Fig. 12. The connection on port of BCI probe emulator for BCI test.

6 BCI Emulator (a) Probe, 1 MHz (b) Emulator, 1 MHz 그림 14. RF VDD Fig. 14. The failure condition of VDD for BCI test. (c) Probe, 1 MHz (d) Emulator, 1 MHz 그림 13. VDD RF I/O Fig. 13. The clock output of I/O buffer under VDD injected RF noise by BCI probe or emulator. 2 DUT [8],[9] VDD IC. I/O 1 MHz BCI emulator RF generator dbm, 1 MHz dbm, 1 MHz VDD. 13, 13(a) Peak to Peak V, 13(b) V. 13(c) Peak to Peak 1.48 V, 13(d) V. S 21, BCI emulator RF I/O. VDD RF, V 1.3 V, 1.1 V. 1 MHz 1, MHz 5 MHz, 표 1. RF generator Table. 1. The power needed to reach the failure condition using BCI probe or emulator. [MHz] F-14 [dbm] Emulator [dbm] [dbm] ( ) (x) * 85 (x) * 9 (x) * 95 (x) * 1, (x) (x) * * (x) 2 dbm. * =Emulator [dbm] RF generator dbm

7 THE JOURNAL OF KOREAN INSTITUTE OF ELECTROMAGNETIC ENGINEERING AND SCIENCE. vol. 25, no. 11, Nov F-14 BCI emulator. (x) RF generator (Agilent E4438C) 2 dbm., BCI emulator,., BCI emulator RF IC., BCI IC.. 결론 BCI IC, BCI emulator. S-, BCI emulator. 1 1, MHz I/O RF BCI emulator, RF. BCI emulator. References [1] IEC , Ed.1, "Integrated circuit - Measurements of electromagnetic immunity - 15 khz to 1 GHz", Part 3: Bulk Current Injection(BCI) Method. [2] IEC , Ed.1, "Integrated circuit - Measurements of electromagnetic immunity - 15 khz to 1 GHz", Part 4: Direct RF Power Injection(DPI) Method. [3] ISO :211(E), "Road vehicles-component test methods for electrical disturbances by narrowband radiated electromagnetic energy", Part 4: Harness excitation methods. [4] Sangkeun Kwak, Seok Soon No, Kyu Jin Kim, Wansoo Nah, and So Young Kim, "Equivalent circuit modeling of bulk current injection probe", Korea-Japan EMT/EMC/ BE Joint Conference, May 212. [5] F. Grassi, F. Marliani, and S. A. Pignari, "Circuit modeling of injection probes for bulk current injection", IEEE Transactions on Electromagnetic Compatibility, vol. 49, no. 3, pp , Aug. 27. [6] David M. Pozar, Microwave Engineering, 3rd Ed, Wiley, 25. [7] CST Microwave Studio, Computer Simulation Technology, [8] Sangkeun Kwak, Wansoo Nah, and SoYoung Kim, "Electromagnetic susceptibility analysis of I/O buffers using the bulk current injection method", Journal of Semiconductor Science and Technology, 13(2), pp , Apr [9],, "Noise Injection Path IC ",, 24(4), pp ,

8 BCI Emulator : ( ) : [ 주관심분야 ] EMI/EMC/SI/PI : ( ) : ( ) 24 7 : ( ) : Intel Corporation : Cadence Design Systems 29 : [ 주관심분야 ] Device and Interconnect Modeling, Power Integrity, Signal Integrity, VLSI Computer-Aided Design, Electromagnetic Compatibility 1171

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