RRH Class-J 5G [2].,. LTE 3G [3]. RRH, W-CDMA(Wideband Code Division Multiple Access), 3G, LTE. RRH RF, RF. 1 RRH, CPRI(Common Public Radio Interface)

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1 THE JOURNAL OF KOREAN INSTITUTE OF ELECTROMAGNETIC ENGINEERING AND SCIENCE Mar.; 26(3), ISSN (Print) ISSN X (Online) RRH Class-J An Analysis of Wideband and High Efficiency Class-J Power Amplifier for Multiband RRH 최상일 이상록 이영철 Sang-Il Choi Sang-Rok Lee* Young-Chul Rhee 요약 LDMOS AB- 60 MHz 55 %, RRH 100 MHz 60 %, GaN 2, J-., W-CDMA GHz % 45 W J-. Abstract Until recently, power amplifiers using LDMOS were Class-AB and Doherty type, and showed 55 % efficiency for narrowband of 60 MHz bandwidth. However, owing to the RRH application of base stations power amplifier module, a bandwidth expansion of at least 100 MHz and high efficiency power amplifiers of at least 60 % power efficiency are required. In this study, a Class-J power amplifier was designed by optimizing an output matching circuit so that the second harmonic load will contain a pure reactance element only and have broadband characteristics by using GaN HEMT. The measurements showed that a 45 W Class-J power amplifier with a power added efficiency of % was achieved when continuous wave signals were input at GHz, including W-CDMA application. Key words: Class-J Power Amplifier, GaN, Load-Pull, Wideband. 서론, LTE(Long Term Evolution) [1].. 3G/4G, LDMOS, (Department of Information & Communication Engineering, Kyung-nam University) *( ) (Korea Telecommunication Component) Manuscript received January 6, 2015 ; Revised February 5, 2015 ; Accepted February 13, (ID No S) Corresponding Author: Sang-Il Choi ( ) 276 c Copyright The Korean Institute of Electromagnetic Engineering and Science. All Rights Reserved.

2 RRH Class-J 5G [2].,. LTE 3G [3]. RRH, W-CDMA(Wideband Code Division Multiple Access), 3G, LTE. RRH RF, RF. 1 RRH, CPRI(Common Public Radio Interface) W- CDMA Gbps LTE Gbps [1]. RRH LDMOS GaN GaN HEMT,,,, GaN [4].,. DPD(Digital Pre-Distortion), D, E, F [4] [6]. 100 %., 100 %, [7].,, 2 J-. J-, AB, B [8]. LTE 1.8 GHz, 2.1 GHz, WCDMA, GaN HEMT - (source pull)/ - (load pull) / J- 2, Q J- RRH.. J- 급전력증폭기동작특성분석 그림 1. RRH Fig. 1. Block diagram of RRH. J- 2. J- DC,, 2 (1) [7]. 277

3 THE JOURNAL OF KOREAN INSTITUTE OF ELECTROMAGNETIC ENGINEERING AND SCIENCE. vol. 26, no. 3, Mar sec sin cos (1) 180. DC, , (2). sin (2), ± sin (3) J %, B- [8]. J- (6), (7). sec cos (7) 2 45 (8). sin (8) J- 2,, 2. J-,,, sin (4) 0 (4) (5). (5),,, (6). m ax, m in (6) 그림 2. Fig. 2. Drain voltage wavform and drain current waveform. 278

4 RRH Class-J. ( ).,.. GaN HEMT, pf.,. 2 3 pole,,.. 고효율, 광대역을위한임피던스정합과 J- 급전력증폭기설계및제작 GaN 45 W, GaN V AB V GHz GaN, 60 % 47 dbm /, - 그림 3. - Fig. 3. Load-pull simulation result.. J (open stub) , 2, 2, J-., GHz dbm, % J-, 3.5 PCB. 7, 8., GHz 46 dbm(45 W) %. 279

5 THE JOURNAL OF KOREAN INSTITUTE OF ELECTROMAGNETIC ENGINEERING AND SCIENCE. vol. 26, no. 3, Mar 그림 4. Fig. 4. Frequency-dependent output power. 그림 7. P in /P out Fig. 7. VS test result. 그림 5. Fig. 5. Frequency-dependent gain and power added efficiency. 그림 6. J- Fig. 6. Class-J power amplifier of implementation. 그림 8.,, Fig. 8. Frequency-dependent P out, gain, power added efficiency., 45 W., 1.6 GHz, GHz 75 %. J- 1. D, E, F-, [5] 79 %,. GaN HEMT 280

6 RRH Class-J 표 1. Table 1. Power amplifier performance analysis. [MHz] BW [MHz] P out [W] PAE [%] HEMT type Ref. [4] GaN Ref. [5] 1, E-pHEMT Ref. [6] 3, GaN This work 1, GaN J- 700 MHz.,,.. 결론 45 W GaN J-. J- E, F-,. J-, GHz 45 W 60 %, AB LTE WCDMA., 2 2. J- RRH, 5G. References [1] Y. Kumagai, Y. Funyu, and H. Maeda, "High-efficiency power amplifier for LTE/W-CDMA system", FUSITSU Sci. Tech. Journal, vol. 48, no. 1, pp , Jan [2] L. Xichun, R. Salleh, A. Aani, and O. Zakaria, "Multinetwork data path for 5G mobile multimedia", ICCSN 09, pp , Feb [3] Y. Shimazu et al., "RRE shared between W-CDMA and LTE systems", NTT DOCOMO Tech. Journal, vol. 12, no. 1 pp , [4] A. Wentzel, W. Heinrich, "A GaN voltage-mode class-d MMIC with improved overall efficiency for future RRH applications", 2013 EuMC, pp , Oct [5] H. R. Bae, S. S. Cho, and J. W. Lee, "Efficiency enhanced class-e power amplifier using the second harmonic injection at the feedback loop", 2010 European Microwave Conf., pp , Sep [6] J. H. Kim, S. J. Lee, B. H. Park, S. H. Jang, J. H. Jung, and C. S. Park, "Analysis of high-efficiency power amplifier using second harmonic manipulation : Inverse class-f/j amplifiers", IEEE Trans. on Microwave Theory and Techniques, vol. 59, pp , Aug [7] N. Tuffy, A. Zhu, and T. J. Brazil, "Class-J RF power amplifier with wideband harmonic suppression", 2011 IEEE-S Int. Microwave Symp. Digest, Jun [8] P. Wright, J. Lees, J. Benedikt, P. J. Tasker, and S. C. Cripps, "A methodology for realizing high efficiency class-j in a linear and broadband PA", IEEE Trans. on Microwave Theory and Techniques, vol. 57, pp

7 THE JOURNAL OF KOREAN INSTITUTE OF ELECTROMAGNETIC ENGINEERING AND SCIENCE. vol. 26, no. 3, Mar : ( ) : 2007 : ( ) [ 주관심분야 ], RF Power Amplifier 1981 : [ 주관심분야 ],, RF Power Amplifier : ( ) : 2011 : ( ) [ 주관심분야 ],, SSPA 282

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