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1 THE JOURNAL OF KOREAN INSTITUTE OF ELECTROMAGNETIC ENGINEERING AND SCIENCE Sep.; 26(10), ISSN (Print) ISSN X (Online) Prediction of Near Magnetic Field Distribution of Switching ICs 김현호 송림 이승배 김병성 Hyun-Ho Kim Reem Song Seungbae Lee* Byung-Sung Kim 요약 PCB.,., - - (Chip On Board, - -. PCB, db. Abstract This work presents a method to predict the near magnetic field distribution on the digital switching circuit mounted on PCB using co-simulation of circuit and electromagnetic fields. The proposed method first obtains the normalized near field distribution by exciting the signal and power ports of the switching circuit using sinusoidal sources. Then the real near magnetic field distribution is determined by weighting the normalized field distribution using the current spectrum of the switching circuit. To confirm the proposed method, a switching IC with a ring oscillator and a output buffer is fabricated and measured in the form of chip-on-board. The surface magnetic field distribution is measured using a magnetic probe above the PCB and compared with the simulation results. Experimental results show the correspondence between simulation and measurement results within 10 db up to fifth harmonics. Key words: EMI, Prediction, Near Field Distribution, Switching ICs, Co-Simulation. 서론 RF. (Electromagnetic Interference: EMI) RF [1]. EMI,. EMI [2]. TEM [3], EMI 2015 ( (No ). (College of Information & Communication Engineering, Sungkyunkwan University) * (Samsung Electronics Co., Ltd.) Manuscript received August 17, 2015 ; Revised October 7, 2015 ; Accepted October 12, (ID No ) Corresponding Author: Byung-Sung Kim ( c Copyright The Korean Institute of Electromagnetic Engineering and Science. All Rights Reserved. 907

2 THE JOURNAL OF KOREAN INSTITUTE OF ELECTROMAGNETIC ENGINEERING AND SCIENCE. vol. 26, no. 10, Oct EMI PCB.,.,,. PCB,, EMI [4]., PCB.. II, III, IV.. 통합시뮬레이션방법론 1,. PCB, PCB. IC, EMI.,,. PCB PCB.. 그림 1. Fig. 1. Co-simulation flow chart., -..., [A/m] 근접자계예측모델 2 IC - - (Chip-On-Board: COB), PCB (VDD). IC 0.13μm CMOS, 3(a). 3(b). (phase locked loop), PLL 908

3 . VSS,., VSS. 2-2 전자기해석 그림 2. Fig. 2. Analysis model for near magnetic field prediction. PCB, IC VDD, PCB. HFSS, 4 1A PCB 1 mm. 2-3 회로해석및스위칭전류스펙트럼계산 (a) (b) 그림 3. (a) IC (b) IC Fig. 3. (a) Schematic of switching IC (b) Die photo of switching IC and placement of pads.., 3 VDD, VSS, OUT_HIGH,,., VDD. PCB, KCL,... SPEC- TRE TM. PCB. PCB 909

4 THE JOURNAL OF KOREAN INSTITUTE OF ELECTROMAGNETIC ENGINEERING AND SCIENCE. vol. 26, no. 10, Oct (a) (a) (a) H-field intensity at VDD line (b) (b) H-field intensity at signal line 그림 4. Fig. 4. H-field intensity at a observation point MHz 전류스케일링을통한총근접자계강도계산 PCB (b) 그림 5. (a) (b) FFT Fig. 5. Current waveform and spectrum at VDD and signal lines., H total (1).. 1 A, (1) 1 A. I ( w) H x y H x y IC, VDD total (,, w) = EM, VDD (,, w) I EM, VDD ( w) I IC, signal + I EM, signal ( w) ( w) H EM, signal ( x, y, w). 측정결과및전력스케일링 3-1 근접자계분포측정 6 IC. LANGER SX [5] 1 mm. 3 m 3 m, 1 mm (1) 910

5 (a) (a) Result of near H-field distribution measurement 그림 6. Fig. 6. Near magnetic field scanning system , 8(a) 550 MHz x. 8(a).,., y 8(c).,.. (b) (b) Result of near H-field distribution simulation (c) (c) Result of near E-field distribution simulation 그림 8., Fig. 8. Results of near field distribution. 3-2 전력스케일링후측정결과와계산결과비교 그림 Fig. 7. Chip-on-board photograph. [A/m], [dbm].. 911

6 THE JOURNAL OF KOREAN INSTITUTE OF ELECTROMAGNETIC ENGINEERING AND SCIENCE. vol. 26, no. 10, Oct Ω, 0 dbm 1 mm (x. 9., dbm., (1) H total 9 0 dbm H 0dBm,, (2). 10 8(a) - - 8(b). IC,. FF, SS. 그림 10., Fig. 10. Comparison of measured and simulated near H- field power., 550 MHz 4 10 db. Power [ simulation dbm] total 0dBm = 20log( H / H )[ dbm] (2). 결론 PCB. PCB,. COB,,, EMI. References 그림 9. Fig. 9. H-field intensity obtained by probe calibration environment. [1],,,, "PCB EMI ",, 14(1), pp , [2] Hyun Ho Park, Jin-Hwan Jung, Tae-Sun Jang, Sang-Tae 912

7 Han, Seung-Hyun Song, Jae-Jin Park, and Hark-Byeong, "Prediction of radiated EMI from PCB excited by switching noise of IC", Microwave and Optical Technology Letters, vol. 51, pp , [3] V. Kasturi, S. Deng, T. Hubing, and D. Beetner, "Quantifying electric and magnetic field coupling from integrated circuits with TEM cell measurements", Proc. IEEE International Symposium on Electromagnetic Compatibility, vol. 2, pp , Aug [4] Hyun Ho Park, Seung-Hyun Song, Sang-Tae Han, Tae- Sun Jang, Jin-Hwan Jung, and Hark-Byeong Park, "Estimation of power switching current by chip-package-pcb cosimulation", IEEE Transactions on Electromagnetic Compatibility, vol. 52, no. 2, May [5] : ( : [ 주관심분야 ] EMI, RFIC Integrity : ( : ( 1999 : S.LSI IC Level [ 주관심분야 ] IC Level EMI/EMS, Power : ( ) : ( : USC ( : [ 주관심분야 ], mm : ( ) : ( : ( : [ 주관심분야 ] RFIC, RF 913

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