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1 1.1,., / (,,, ), (ACDC, DCAC), (, ),, (, ). (discrete), (module), GaN IT, /. Fig. 1 1) (Silicon) IGBT (Insulated Gate Bipolar Transistor), MOSFET (Metal Oxide Semiconductor Field Effect Transistor), IGBT, (wide bandgap). Fig GaN,, 53

2 ., IT,,,,. (wide bandgap) GaN (Gallium Nitride),. Fig. 2 GaN /, GaN (E g=3.4ev) (700). GaN -,, GaN (Si=1.1eV, GaN=3.2eV),,. IGBT30% HEV,, 10%. 2) Fig. 3 /// Fig. 3.,,,. GaN, (GaAs, Gallium Arsenide). GaN 10 Fig. 4. GaN 1/5. GaN Fig. 5 IT,,,,.. Fig. 2. GaN,. Fig. 4. IGBT GaN. 54

normally-off GaN Au-free normally-off GaN FET. GaN-Si Si (110) CMOS, GaN 380V, 95% DC-DC, GaN-Si CMOS IC.

3 (a) GaN (b) Fig. 5. GaN. 2.1 GaN NTIS () 6,,,,,, GaN. 3) GaN-on-Si IT GaN,, GaN, V GaN-on-Si, GaN Si GaN / FET,, GaN, GaN HFET GaN HFET,, passivation, GaN,, Aufree Si CMOS normally-off GaN Au-free normally-off GaN FET. GaN-Si Si (110) CMOS, GaN 380V, 95% DC-DC, GaN-Si CMOS IC. AlGaN/GaN / / IC 1800 cm 2 /Vs AlGaN/GaN 1500V normally-off/-on 95% GaN. spin-ondielectric GaN SOD sol-gel GaN normally-off. GaN MBE AlGaN/GaN, n-type p-type, 600V/10A GaN SBD/FET.,,, GaN. GaN 4 MBE MOCVD AlGaN/GaN, 600V/ 1.2V GaN SBD, 600V/ 3V GaN FET 55

4 , GaN 4 MOCVD AlGaN/GaN, 1200V/5A GaN SBD, 1200V/5A normally-off GaN FET. GaN GaN,, GaN GaN RF. 2) WBGS-RF , 1 (Phase I) GaN, 2 (Phase II), 3 (Phase III) subsystem MMIC, 21, TriQuint. WBGS-RF NEXT GaN, GaN-on-SiC MMIC TriQuint GHz 9-15W, PAE 20-38%, ARL 35 GHz 4W, PAE 23%. GaN, GaN-on-Si EPC 200V, Transphorm 600V/17A GaN-FET 600V/8A SBD, GaN Systems GaN-on-SiC 1200V/7A 600V/15A. Transphorm 4 kw, Si TO-220 SiC Si GaN, RF. 2) KOR- RIGAN ,,,, MMIC Thales Airborne System, KORRIGAN MANGA KORRIGAN ,,,,, 5 14 SELEX SI. 4 AlGaN/GaN-on-SiC SiC, 0.15 / 0.25 / 0.5 AlGaN/ GaN HEMT CPW (Co-Planar Waveguide),, MMIC NEDO National ProjectGaN AIST,. 2) (METI : Ministry of Economy, Trade and Industry) AlGaN/GaN HFET. 2 GHz 50V 230W ( 4.7 W/mm), 67%, 9.5dB, 30 GHz Ka-band 0.25 T-gate HFET 5.8 W/mm 56

. AIST (National Institute of Advanced Industrial Science and Technology), NEC Toyoda Gosei, R&D Furukawa Electric, Oki Electric, Mitsubishi Electric, Hitachi Cable, Matsushita Electric, Sumitomo

5 . AIST (National Institute of Advanced Industrial Science and Technology), NEC Toyoda Gosei, R&D Furukawa Electric, Oki Electric, Mitsubishi Electric, Hitachi Cable, Matsushita Electric, Sumitomo Electric, ULVAC. (METI) (6 ) GaN 4) (Table 1, 2), 2010 IR EPC GaN-on-Si 200V IT Consumer., MicroGaN 600V/5A Transphorm 600V GaN 2013, Velox SMPS GaN SBD (Schottky Barrier Diode), Azzuro 600V, IMEC 8. Table 1. GaN 57

6 Gate Recess HEMT (V th), fluorine F Treatment.

6 Table 2. GaN Panasonic, Matsushita, Sanken, Toyota Toshiba, normally-off SBD., Toyota, Toshiba GaN GaN Normally-off GaN FET GaN p- normally-off FET. Fig. 6 Gate Recess HEMT (V th), fluorine F Treatment. p- GaN p-gan Gate normally-off FET p- n (V th) +1.0V (V th) > +3V. NEC Piezo neutralization layer normally-off., Fig. 6. Normally-off GaN FET. 58

gate recess SiO 2, Si 3N 4, Al 2O 3 gate dielectric MIS (Metal-Insulator-Semiconductor) FET, Transphorm GaN normally-on FET normally-off Si MOSFET diode cascode normally-off FET. 2.3.2. GaN Fig.

Back-barrier, IMEC Si Substrate local removal, Cree field-plate.

7 gate recess SiO 2, Si 3N 4, Al 2O 3 gate dielectric MIS (Metal-Insulator-Semiconductor) FET, Transphorm GaN normally-on FET normally-off Si MOSFET diode cascode normally-off FET GaN Fig. 7 (mesa) SiO 2, SiN x AlGaN/GaN 2DEG (2-Dimensional Electron Gas) Oxide filling, Furukawa Deep Mesa, Panasonic P + stopper Blocking voltage boosting, Cree Field-plate, AlGaN/GaN 2DEG carbon Back-barrier, IMEC Si Substrate local removal, Cree field-plate. GaN 5-15) (Table 3), UCSB surface dielectric, surface p- doping, p-type GaN, insulated gate,, Toshiba surface dielectric, insulated gate,, AlN nucleation, NCU surface dielectric,. IMEC surface dielectric,, Si, KU Leuven Si, FBH p-gan gate,, double hetero-structure, GaN back barrier, AlN nucleation, Berlin Univ. surface dielectric, insulated gate,, double hetero-structure, GaN back barrier, AlN nucleation. Table 3. GaN ( ) Fig. 7. GaN FET GaN Package discrete, Pb/Sn TO- 220, 175. Transphorm GaN (TPH3006PS) TO-220 cascode GaN FET Si MOSFET (Fig. 8),

APEI DBC (Direct Bond Copper) Al 2O 3 (=35 W/m

8 Fig. 8. GaN power switch (Transphorm). discrete TO-254/257 (Fig. 9),, hermetic seal. 200 GaN discrete Fig. 9 APEI normally-off 1200V/38A/50m JFET T j(max)=225 TO-254 hermetic. GaN A,, 200, GaN Si TO SOT,, (>150) APEI TO V, A, 250 (Fig. 10). Fig. 10. () APEI X-6 discrete () building block approach, GaN GaN 10 RF, IT,. W W GaN. APEI DBC (Direct Bond Copper) Al 2O 3 (=35 W/m K, =8.4 ppm/k) AlN power substrate (=150W/mK, =4.5 ppm/k) (Fig. 11,12). Fig. 11. APEI, (>1MHz), X-5 SiC. Fig. 9. SiC power JFET(APEI). Fig. 12. GaN FET GaN SBD. 60

2.4., Table 5,. 16), Toyoda Gosei, Hitachi Cable 122(1), 59(2), Matsushita Electric 55(3), Sony 48(4). Top 10 Nichia Chem, Oki Electric Nitronex (Table 5)., 16) Toyoda Gosei Al 0.15Ga 0.

Nippon Telegraph & Telephone Al xga 1-xN/GaN, Sony AlGaN+, ELOG+, Al 0.15Ga 0.85N, Cree AlGaN/GaN HEMT, Matsushita Electric InAl yga 1-yN, Al 0.1Ga 0.9N, Al 0.26Ga 0.

9 2.4., Table 5,. 16), Toyoda Gosei, Hitachi Cable 122(1), 59(2), Matsushita Electric 55(3), Sony 48(4). Top 10 Nichia Chem, Oki Electric Nitronex (Table 5)., 16) Toyoda Gosei Al 0.15Ga 0.85N, Al 0.07Ga 0.93N, Al 0.2Ga 0.8N ELOG HVPE, Hitachi Cable (Al xga 1-x) 1-yIn yn, HT Buffer, Table 4. Key word Table 5. GaN 5/3. Nippon Telegraph & Telephone Al xga 1-xN/GaN, Sony AlGaN+, ELOG+, Al 0.15Ga 0.85N, Cree AlGaN/GaN HEMT, Matsushita Electric InAl yga 1-yN, Al 0.1Ga 0.9N, Al 0.26Ga 0.74N ELOG Device structure. Nichia Chem Ga xal 1-xN, Oki Electric Al xga 1-xN, Al xin yga 1-x-yN, Nitronex, Eudyna Device. GaN Table 6., Sharp ( , Field Effect Transistor) GaN. Cree ( , GaN Based HEMT with Buried Field Plate) Table 6. GaN 61

10 GaN HEMT. Fairchild ( , ) 1, 1 passivation 1, Fairchild ( , ),, passivation. Northrop Grumman Space ( , High Electron Mobility Transistor Semiconductor Device Having Electric Field Relaxing Plate and Method of Manufacturing the Same) 1 T 2 T, Cree (US 2005/ , Wide bandgap transistors with multiple field plates),.,,. Cree (KR , ) Sharp (JP , Field Effect Transistor), KAIST ( , ) GaN, HEMT,,, shielding effect,,,,, Si Yole 17) (Fig. 13), CAGR (Compound Annual Growth Rate)1.9%, CAGR7.2%, CAGR7.9%, CAGR5.6%. IC,, (discrete), IC (voltage regulator) IC (power management IC), IPM (Intelligent Power Module), Si MOSFET, IGBT, SiC MOSFET, GaN FET, SBD, Fig

Fig. 13. (Source : Yole Development 2013).

GaN Systems GaN-on- SiC 1200V/7A 600V/15A.

11 Fig. 13. (Source : Yole Development 2013). IC,, (discrete) 70% GaN GaN, GaN-on-Si EPC 200V, Transphorm 600V/17A GaN FET 600V/8A GaN SBD, GaN Systems GaN-on- SiC 1200V/7A 600V/15A. Yole(Fig. 14), 900V 67% GaN 900V. 1,17) GaN Fig. 15, YoleLux ResearchWBG (Wide Band Fig. 15. GaN (Source : Yole Development 2012). Gap) %. Fig. 16 GaN ( ) 17), 2012 GaN 2013 Fig Fig. 16. GaN () ( ) (Source : Yole Development, 2013). 63

2015 GaN, 2019,, 2020 12% 50% GaN. 4.1. GaN GaN-on-Si CMOS (8 ), Si- WBG (GaN, SiC) (Fig. 17), DC-DC 3%, AC- DC 1.5-2%, DC-AC 2-3%, WBG. Fig. 17. Si WBG (GaN, SiC) (Source : SiC 2013 Report, Yole Development, May 2013).

12 2015 GaN, 2019,, % 50% GaN GaN GaN-on-Si CMOS (8 ), Si- WBG (GaN, SiC) (Fig. 17), DC-DC 3%, AC- DC 1.5-2%, DC-AC 2-3%, WBG. Fig. 17. Si WBG (GaN, SiC) (Source : SiC 2013 Report, Yole Development, May 2013)., PV, (HEV/EV /PHEV) GaN. 4.2.,,,. GaN TOE (Ton of Oil Equivalent), 42.1% 28.2% ( 2010, ) ,660 GWh,,, LNG 307,528 GWh 65% (, 5 ) % %, 30% 90% 14,230 GWh, GaN 50% 95% 7,115 64

13 GWh. 35,522 GWh 2.4, 1.64 TOE 91.3 TC (Ton of Carbon). 4.3.,, IT Green IT, -,, GaN GaN (FET/SBD) Si, Sapphire, SiC. GaN (lateral).. GaN (vertical). GaN 2, Avogy WiPDA ) 1700V/5A GaN-on-GaN SBD, 3700V., GaN. 2013Transphorm. GaN.,, GaN. 1., GaN /,SiC GaN, KINTEX, Korea (2013). 2.,,,,, GaN,, 27 [1] (2012). 3., GaN,SiC GaN, KINTEX, Korea (2013). 4.,,,,,,, / : GaN,, 27 [4] (2012). 5. S. Karmalkar and U. K. Mishra, Enhacement of Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors Using a Field Plate,IEEE Trans. Electron Devices, 48 [8] (2001). 6. N. Zhang, High Voltage GaN HEMTs with Low On- Resistance for Switching Applications,Dissertation of Doctor Degree, UCSB, USA H. Xing, Y. Dora, A. Chini, S. Heikman, S. Keller, and U.K. Mishra, High Breakdown Voltage AlGaN/GaN HEMTs Achieved by Multiple Field Plates,IEEE Electron Device Lett., 25 [4] (2004). 8. Y. Dora, A. Chakraborty, L. McCathy, S. Keller, S.P. DenBaars, and U.K. Mishra, High Breakdown Voltage Achieved on AlGaN/GaN HEMTs with Integrated Slant Field Plates,IEEE Electron Devices Lett., 27 [9] (2006). 65

14 9. W. Saito, T. Nitta, Y. Kakiuchi, Y. Saito, K. Tsuda, I. Omura, and M. Yamaguchi, On-Resistance Modulat ion of High Voltage GaN HEMT on Sapphire Substrate Under High Applied Voltage, IEEE Electron Device Lett., 28 [8] (2007). 10. K. Remashan, W.-P. Huang, and J.-I. Chyi, Simulation and Fabrication of High Voltage AlGaN/GaN Based Schottky Diodes with Field Plate Edge Termination, Microelectron. Eng., 84 [12] (2007). 11. D. Visalli, M. Van Hove, J. Derluyn, P. Srivastava, D. Marcon, J. Das, M. R. Leys, S. Degroote, K. Cheng, E. Vandenplas, M. Germain, and G. Borghs, Limitations of Field Plate Effect due to the Silicon Substrate in AlGaN/GaN/AlGaN DHFETs, IEEE Trans. Electron Devices, 57 [12] (2010). 12. D. Visalli, Optimization of GaN-on-Si HEMTs for High Voltage Applications, Dissertation of Doctor Degree, Katholieke Universiteit Leuven, Germany E. Bahat-Treidel, O. Hilt, F. Brunner, V. Sidorov, J. Würfl, and G. Tränkle, AlGaN/GaN/AlGaN DH- HEMTs Breakdown Voltage Enhancement Using Multiple Grating Field Plates (MGFPs), IEEE Trans. Electron Devices, 57 [6] (2010). 14. E. Bahat-Treidel, GaN-Based HEMTs for High Voltage Operation: Design, Technology and Characte rization, Dissertation of Doctor Degree, Berlin Univ., Germany, Y. Dora, Understanding Material and Process Limits for High Breakdown Voltage AlGaN/GaN HEMTs, Dissertation of Doctor Degree, UCSB, USA, , (2009). 17. Yole Developement, Next Generation Power Device SiC/GaN Industry/Market Trends, I-Sedex 2013, KIN- TEX, Korea (2013). 18. D. Disney, Very-High Performance GaN-on-GaN Diodes, 1 st IEEE Workshop on Wide bandgap Devices and Applications 2013 Proceeding. 66

KEIT PD(15-10)-내지.indd

KEIT PD(15-10)-내지.indd / KEIT PD / KEIT PD / SUMMARY,, 13 300, 15 341, 17 367 5.2% 13 6,000 2%, 90%,,,,,,, ㆍ ㆍ,,, KEIT PD Issue Report PD ISSUE REPORT OCTOBER 2015 VOL 15-10 1. (AC DC, DC AC), (, ),, MOSFET, IGBT(Insulated Gate