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1 Characterization Technology and Reliability (Local Characterization by Atomic Force Microscopy (AFM)) 20. 1Tb Gb/s m (Nanotechnology) 21,,,,,.,,, Gerd Binnig Heinrich Rohrer tunneling tunneling current scanning tunneling microscopy (STM) 1)... (Scanning Force Microscopy), (Van der Waals Force), (Magnetic Force), (Electrostatic Force), (Friction Force),.,,,,,.,,.,. Fermi level pinning. 93

2 . SFM Kelvin probe force microscopy 2), piezoelectric force microscopy 3), magnetic force microscopy 4).. 1) FET(Field Effect Transistor) 100 drain source shallow junction channel. p-n channel.. dopant profile. 2). PRAM (phase change random access memory) RRAM (resistive random access memory).... 3) - inversion domains, threading dislocations, pin holes ) ITO (Indium - Tin - Oxide) (Light-emitting Diode), (Liquid crystal display), (Solar cell). ITO (Full color) / (Organic/Polymer LED). ITO (Work Function - 4 5eV; ) hole-injecting. ITO /,. Table 1. 2 doping profiling (shallow pn junction) SKPM 1), SCM 2), SRP 3) gate oxide C-AFM 4) transport behavior SIM 5) failure SKPM, C-AFM (phase change) C-AFM C-AFM TFT (potential conductivity) SKPM, C-AFM ITO SKPM, C-AFM PFM6), SNDM 7) SIM, SKPM C-AFM mapping SNDM Electronic band alignment SKPM band bending Schottky current C-AFM 1) SKPM : Scanning Kelvin Probe Microscopy; 2) SCM : Scanning Capacitance Microscopy; 3) SRP : Spreading Resistance Microscopy; 4) C-AFM : Conducting Atomic Force Microscopy; 5) SIM : Scanning Impedance Microscopy; 6) PFM : Piezo-response Force Microscopy; 7) SNDM : Scanning Non-Dielectric Microscopy 94

3 ITO. Table.. 2.1,, contact mode, tapping mode, noncontact mode. Contact mode, position sensitive photo diode (PSPD). feedback., N/m., noncontact mode., noncantact mode nm. Van der Waals force 0.1~0.01nN. (amplitude),.. Tapping mode noncontact mode. Noncontact mode,, tapping mode Kelvin probe force microscopy Kelvin Probe Force Microscopy (KPFM) coating Si surface potential. contact potential difference (CPD) Kelvin method capacitance displacement current current. KPFM current electrostatic force, mv sensitivity nm. 95

. Fermi level, voltage CPD. capacitor (U=1/2CV 2 ).. Fig. 1. KPFM system. tip sample dc ac voltage (Vapp = Vdc+ Vac sin wt)..., atom ion, 5), charge trap 6), surface band bending 7). KPFM. Fig. 1 KPFM system.

4 . Fermi level, voltage CPD. capacitor (U=1/2CV 2 ).. Fig. 1. KPFM system. tip sample dc ac voltage (Vapp = Vdc+ Vac sin wt)..., atom ion, 5), charge trap 6), surface band bending 7). KPFM. Fig. 1 KPFM system. f 0, f 1 surface potential. KPFM electrostatic force feedback CPD voltage CPD, electrostatic force 0 ( force=0, nullifying techniques) voltage CPD. CPD. Fermi level F 1 component surface contact potential lock-in technique F 1 electrostatic force dc voltage feedback loop modulation surface potential. KPFM surface potential electronic state. KPFM, flash memory silicon-oxide-nitrideoxide-silicon (SONOS) system trap charge 8), nanocrystal floating gate memory 9), p-n junction profile 10), open-circuit voltage photo-induced charging rate 11) 96

. tip dc voltage sweep first harmonics term 0 voltage Kelvin probe force spectroscopy (KPFS). KPFS CPD calibration. Highly Oriented Pyrolytic Graphite (HOPG) 5.0eV 12). calibration HOPG.

5 . tip dc voltage sweep first harmonics term 0 voltage Kelvin probe force spectroscopy (KPFS). KPFS CPD calibration. Highly Oriented Pyrolytic Graphite (HOPG) 5.0eV 12). calibration HOPG. HOPG Pt(111), Au film, ITO Table 2. Pt (111) 5.68 ev Au 5.08 ev, ITO 5.30eV. 13,14) nm. scanning nonlinear dielectric microscopy (SNDM) 16) capacitance, SCM. SCM SNDM MOSFET source drain channel 17), Si carrier 18), SONOS writing erasing trap 19), 20). Table 2. Kelvin Probe Force Spectroscopy HOPG, Pt(111), Au, ITO Sample HOPG Au Pt ITO CPD (Tip-Sample) (V) Measurements work function (ev) ref Literature work function (ev) ~3 5.6~7 4.0~ Scanning Non-linear Dielectric Microscopy KPFM Scanning capacitance microscopy (SCM) Matey Blanc SCM 15) metal-oxide-semiconductor (MOS) - (C-V) SPM,. SCM profile Fig. 2. SNDM system. Fig. 2 SNDM system. coating, SiO2 layer, MOS. dc/dv. Fig. 3(a) C-V curve, Fig. 3(b) dc/dv. dc/dv dc/dv. dc/dv. n- type p-type dc/dv p-type, n-type n p. Fig. 3(c) p type n type 97

SNDM image. 5 10 19 /cm 3 n+ type Si photolithography boron arsenic.

6 Fig. 4. PFM system. Fig. 3. (a) C-V curve (b) dc/dv curve (c) p type n type SNDM image. SNDM image /cm 3 n+ type Si photolithography boron arsenic. p-type 3 boron /cm 3, n-type 5 arsenic /cm 3. doping profile. dynamics 22,23). ( ). Fig. 4 PFM system. contact mode ac dimension, modulated deflection Piezoelectric force microscopy.,. 21). Fig. 5. (a) 60 nm PZT hysteresis loop, engineering PFM (b) phase (c) amplitude image 98

first harmonic term lock-in-technique., phase. Fig. 5(a) 60 nm PZT hysteresis loop. dc ac. Fig. 5(b) (c) PFM phase amplitude image engineering. 19 nm, PFM. 2.

7 first harmonic term lock-in-technique., phase. Fig. 5(a) 60 nm PZT hysteresis loop. dc ac. Fig. 5(b) (c) PFM phase amplitude image engineering. 19 nm, PFM Magnetic force microscopy MRAM (magnetic random access memory).. 24), magnetic force microscopy (MFM) 4). MFM. Fig. 6 MFM. MFM noncontact mode mode Van der Waals force, long-range force. repulsive attractive...,,,,, probe nanolithography, probe-based data storage system,. / (National Research Lab. R0A ) (ERC, Center for Materials and Processes of Self-Assembly R ). Fig. 6. MFM. 1. G. Binnig and H. Rohrer, Surface Studies by Scanning Tunneling Microscopy. Phys. Rev. Lett. 49, (1982) 2. M. Nonnenmacher, M. P. O Boyle, and H. K. 99

8 Wickramasinghe, Kelvin probe force microscopy. Appl. Phys. Lett. 58, (1991) 3. S. V. Kalinin and D. A. Bonnell, Imaging mechanism of piezoresponse force microscopy of ferroelectric surfaces. Phys. Rev. B 65, _1-11 (2002) 4. D. Rugar, H. J. Mamin, P. Guethner, S. E. Lambert, J. E. Stern, I. McFadyen, and T. Yogi, Magnetic force microscopy: General principles and application to longitudinal recording media. J. Appl. Phys. 68, (1990) 5. H. Sugimura, Y. Ishida, K. Hayashi, O. Takai, and N. Nakagiri, Potential shielding by the surface water layer in Kelvin probe force microscopy. Appl. Phys. Lett. 80, (2002) 6. G. Lubarsky, R. Shikler, N. Ashkenasy, and Y. Rosenwaks, Quantitative evaluation of local charge trapping in dielectric stacked gate structures using Kelvin probe force microscopy. J. Vac. Sci. Technol. B 20, (2002) 7. A. Chavez-Pirson, O. Vatel, M. Tanimoto, H. Ando, H. Iwamura, and H. Kanbe, Nanometer-scale imaging of potential profiles in optically excited n-i-p-i heterostructure using Kelvin probe force microscopy. Appl. Phys. Lett. 67, (1995) 8. S.-D. Tzeng and S. Gwo, Charge trapping properties at silicon nitride/silicon oxide interface studied by variable-temperature electrostatic force microscopy. J. Appl. Phys. 100, _1-9 (2006) 9. C. Y. Ng, T. P. Chen, H. W. Lau, Y. Liu, M. S. Tse, O. K. Tan, and V. S. W. Lim, Visualizing charge transport in silicon nanocrystals embedded in SiO 2 films with electrostatic force microscopy. Appl. Phys. Lett. 85, (2004) 10. H. Shin, C. Kim, B. Lee, J. Kim, H. Park, D-K. Min, J. Jung, S. Hong, and S. Kim, Formation and process optimization of scanning resistive probe. J. Vac. Sci. Technol. B, 24, (2006) 11. D. C. Coffey and D. S. Ginger, Time-resolved electrostatic force microscopy of polymer solar cells. Nature Materials, 5, (2006) 12. M. Bohnisch, and F. Burmeister, A. Rettenberger, J.Zimmermann, J. Boneberg and P. Leierer, Atomic Force Microscope Based Kelvin Probe Measurements: Application to an Electrochemical Reaction. J. Phys.Chem. B, 101, (1997) 13. C. Kim, B. Lee, H. J. Yang, H. M. Lee, J. G. Lee, and Shin, H. Effects of Surface Treatment on Work Function of ITO (Indium Tin Oxide) Films, J. Kor. Phys. Soc. 47, S (2005). 14. H. Shin, C. Kim, C. Bae, J.-S. Lee, J. Lee and S. Kim Effects of ion damage on the surface of ITO films during plasma treatment, Appl. Surf. Sci. 253, (2007) 15. J. R. Matey and J. Blanc, Scanning capacitance microscopy. J. Appl. Phys. 57, (1985) 16. Y. Cho, A. Kirihara, and T. Saeki, Scanning nonlinear dielectric microscope. Rev. Sci. Instrum. 67, (1996) 17. V. Raineri and S. Lombardo, Effective channel length and base width measurements by scanning capacitance microscopy. J. Vac. Sci. Technol. B 18, (2000) 18. C. J. Kang, C. K. Kim, J. D. Lera, Y. Kuk, K. M. Mang, J. G. Lee, K. S. Suh, and C. C. Williams, Depth dependent carrier density profile by scanning capacitance microscopy. Appl. Phys. Lett. 71, (1997) 19. K. Honda and Y. Cho, Visualization using scanning nonlinear dielectric microscopy of electrons and holes localized in the thin gate film of a metal-sio 2- Si 3N 4-SiO 2-semiconductor flash memory. Appl. Phys. Lett. 86, _1-3 (2005) 20. Y. Cho, S. Hashimoto, N. Odagawa, K. Tanaka, and Y. Hiranaga, Realization of 10 Tbit/in. 2 memory density and subnanosecond domain switching time in ferroelectric data storage. Appl. Phys. Lett. 87, _1-3 (2005) 21. Meyer B and Vanderbilt D, Ab initio study of ferroelectric domain walls in PbTiO3. Phys. Rev. B. 65, _1-11 (2002) 22. T. Tybell, C. H. Ahn, and J.-M. Triscone, Ferroelectricity in thin perovskite films. Appl. Phys. Lett. 75, (1999) 23. J. Woo, S. Hong, D-K. Min, H. Shin, and K. No, Effect of domain structure on thermal stability of nanoscale ferroelectric domains. Appl. Phys. Lett. 80, (2002) 24. J. Chang, A. A. Fraerman, S. Han, H. Kim, S. A. Gusev, and V. L. Mironov, Magnetic force microscopy (MFM) study of remagnetization effects in patterned ferromagnetic nanodots. Journal of magnetics, 10, (2005) 100

9 Case Western Reserve University 1996 Case Western Reserve University Max-planck Institute fur Metallforschung, Alexander von Humboldt Research Fellow , Samsung Advanced Institute and Technology, Storage Lab., Member of Research Staff , Samsung Advanced Institute and Technology, Storage Lab., Project Manager

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<30352DB1E2C8B9C6AFC1FD2028C8ABB1E2C7F6292036302D36362E687770> 3D 나노-마이크로 프린팅 기술의 현황 홍 기 현 한국기계연구원 부설 재료연구소 표면기술 연구본부 3D Nano-micro Printing Technology Kihyon Hong Korea Institute of Materials Science, Gyeongnam 642-831, Korea Abstract: 최근 3D 프린팅 기술을 이용하여 마이크로, 나노