- 19 -
2 2-1. 2-1., RAM (Random Access Memory ) ROM (Read Only M em ory ). RAM RAM DRAM (Dyn am ic RAM ) SRAM (St atic RAM ). DRAM. SRAM DRAM. ROM ROM. SRAM RA M RA M RA M DRAM PROM OT PROM EPROM R OM EEP ROM F LA SH Mask ROM 2-1. - 21 -
PROM (Program able ROM ) ROM. PROM OT PROM (One T ime PROM ), EPROM (Er as able PROM ), EEPROM (E lectrically Er as able PROM ). OT P EPROM in - sy stem,. one - tim e- progr amm able". OT P. EPROM,.. RAM. EPROM EEPROM. ( ). ( ).. EEPROM.. - 22 -
2-2. EEPROM.. EEPROM 2-2. 2-2. EEPROM EEPROM 1,000 SRAM - 23 -
EEPROM. CPU., EEPROM CPU Off. EEPROM. EEPROM 1967. EEPROM 2-3. (a), (b ).,. (a) 1V, ( ) 1V. (b ). 6V. 6V. - 24 -
2-3. 2-4 EEPROM.. (a) 1 (b ) 0.. - 25 -
,.. 2-4. EEPROM... - 26 -
2-5. EEPROM 1963. 2-5(a) M OS. 2-5(b ),, 2-5(c),.,. - 2 7 -
2-3. 2-3 - 1.... /..,., 1984 IEDM (Intern ation al E lectron Device M eeting ) T OSHIBA (F.M asuoka et al., "A n ew F lash E EPROM cell u sing triple poly silicon technology "). 2-3 - 2., EPROM UV ( ). UV - PROM UV ( ) EEPROM., ( ). - 28 -
.,. ( ).. DRAM.,. EEPROM ( ), 1 2, 1..,. EEPROM 1., (sector ),. 1. - 29 -
., DRAM. 2-3 - 3. 1 EPROM, 2 EEPROM 1, EPROM EEPROM, F lash EEPROM. 2-6., DRAM SRAM. - 30 -
2-6. PROM (Program ROM). 2-7 2-1... DRAM Bit Cost. /. (P age) Multiple Bytes. Random, Serial, P age. F - N. F - N. - 31 -
High density EPROM DRAM FLASH EEPROM SRAM Nonvolatility Electrical Re- writability 2-7. 2-1. Nonvolatility High density I- T cell Low Power In- system rewritability Bit alterability Fast read Fast write High endurance Low cost Single- power supply UV- Hard Floppy Flash DRAM SRAM EEPROM EPROM Disk Disk O X X O O O O O O X X O O X O X X X O X X O X X O O X X O O O O X O O X O O O X O O O O O O O X X O O O O O O O O O O O X O O O O X X O O O O O O O X O O - 32 -
2-3 - 4. EEPROM,. 2-2. 2-2. Re ad D ata D at a B it W rit e Co s t DRAM 1T r +1Cap 10ns 10ns 100 W 1 ( ) 4T r + SRAM 2 10ns 10ns 100 W 1 ( ) EPROM 1T r 100ns + 100 s 1.2 EEPROM Flash Memory 2T r + 100ns ( ) 1T r 100ns + 10m s 10 10 s 1 EEPROM, 2-3.,,. - 33 -
2-3. 3V 5V/ 12V 5V/ 12V 5V/ 12V(3V ) 5V 5V (3V ) 3V (Size) 1 1 10 10 100, B and- to- Band,.,,.,,. - 34 -
2-4. 2-8. N OR NAND, N OR AND, DINOR (Divided Bir - line NOR ), V GA (Virtu al Ground Arr ay ). N OR. NAND. AND DINOR. 2-8. - 35 -
N OR. NAND. 2-4 NAND N OR. 2-4. NAND NOR N A N D N OR /, (Random Access ), /. (Serial Acces s T ype) (HDD ) (, CPU RAM ) ( ) 2... - 36 -
2-4 - 1. N A N D 2-4 - 1-1. 2-9. EPROM 2. 100. Oxide- Nitride- Oxide (ONO) 3 250. DRAM, NOR 80%. NAND EEPROM 2-10 / 1,. - 37 -
2-9. NAND T I 1975 U SP4059826 M ask ROM. 2-10. NAND - 38 -
2-4 - 1-2. 2-11(a), 0V, P - w ell 23V. F low lw e- Nordheim., - 3V. F - N. J = A E 2 ex p ( - B / E ) J, E, A, B. (a) (b ) (c) 2-11. NAND 2-4 - 1-3. ( ) 2-11(b ), 21V, P - w ell 0V. 2V. 0 0V, 1 10V. 10V - 39 -
,. 2-4 - 1-4. 2-11 NAND. 2-11(c), 5V pre- ch arge, 0V, 1 0. 2-4 - 1-5. F - N (Couping Ratio), V cc., Read F ail NAND. 2-4 - 1-6. NAND 2-12 NAND, T riple Well(pocket p- well), CMOS Process, 2- Poly, 1- metal - 40 -
Process. - 41 -
2-12. NAND 2-4 - 1-7. NAND NAND 16M KM 29N 16000T S. KM 29N 16000T S 2M 8Bit NAND 5V, (2M +64K ) 8Bit. (256+8) 8Bit., 1 256+8Bytes. 1 20 s, 80n s.,,. 44(40) T SOP. - 42 -
KM 29N 16000T S [Comm and A ddress Read/ W rite],, I/ O#. I/ O# 1 2, 3. 64Bytes ((256+8) 8Bit s ) 1, 16., 16P ages = 16 (256+8)Bytes (4K +128)Bytes. 256 2-13, 16MBit. 2-5 KM29N16000T S, 2-6 KM29N16000T S. (En able). CEB CEB. NAND. NAND 3. - 43 -
2-13. NAND 2-5. KM29N16000TS 1Cy c le 1Cy c le 2Cy cle Sequential Data Input 80h Block Er ase 60h D0h Read 1 00h Multi- Block Erase 60h 60h Doh Read 2 50h Erase Suspend B0h Read 3 90h Erase Resume D0h Reset FFh Read Status 70h Page Program 10h Read Register60h E0h DRAM. - 44 -
DRAM. 2-6. KM29N 16000TS CLE A LE CE B W EB REB W P B I/ O# H L - R H Din L H - R H Din L H - H F Dout L L - R H Din L L - H F Dout Z Z R : Low and Rising Edge F : High and Failing Edge (3Cycle) (3Cycle) Read&Data Program, Erase, Busy State Write Protect 2-4 - 2. N O R 2-4 - 2-1. 2-14 N OR. EEPROM 1 M OS. 2. ( 10nm ).., - 45 -
.. 2-14. NOR 2-4 - 2-2. 2-15, 5V, 0V, 12V,.,.. 2-15. NOR - 46 -
2-4 - 2-3. 0 5V,. 1 5V, 0. 2-4 - 2-4.. 3. 2-16, 12V, 0V. P ( ) (> 10MV/ cm ), F - N... /.,.. - 47 -
2-16. NOR / 2-17 / /. 5V, (- ). 2-17. NOR / /.,. - 48 -
2-18, - 18V (- ), ( ) 18V (+).. F - N.. /., F - N.,. 2-18. NOR - 49 -
(V G )- (Id ) 2-19. (a)., (b ) 1V., 7V (c). 2-19. - 2-4 - 2-5. 0V 1 On - Cell( ). - 50 -
2-4 - 2-6. NO R N OR,. NOR XIP (E xecute In Place : ). 65 75 3 28F 016XS 30 33M Hz. NOR 64Kbyte 1 2sec,.,. HN28F 1600 NOR (Sector ) 512 10, 32, 15. RAM NOR 7 10 / Byte. 16MBit 2 256RAM. - 51 -
3 / Byte 1 2. HN28F 1600 8. 1 10 8 20. 2-4 - 3. D IN O R DINOR 2-20 2-25. 2. DINOR NOR NOR. NOR. 25%. 256Byte, 3.3V. - 52 -
F - N, F - N. 2-20. DINOR 2-4 - 4. A N D (A C E E ) AND 2-21, 2-25 N OR NAND. AND 32MBit 512Byte 2. 2-2 1. AND (ACEE) - 53 -
2-4 - 5. H i C HiC 2-22,, / (Colum n/ Row ) (Redundancy )., Positive, Band - to- Band. (W indow ). (a) (b ) 2-22. HiC 2-4 - 6. - - (Source Injection - Comm on Ground) 2-23, CHE, Poly - to- Poy. 2-23. - 54 -
2-5. 1M 2-24.,,.. 2-24. 1M - 55 -
2-5 - 1. 2-25. NOR ( EPROM ),, NAND (,,... ), DINOR, AND.. 2-25. - 56 -
2-5- 1-1. NAND F - N NOR., NAND 2-26, 0V 15-20V. 15-20V., (,... ) 2-7. 2-26. - - 57 -
2-7. ( ) ( ) 2-26 Vcc. SSL Vcc Vpass, Vpgm, S SL Off 8-10V Self- Boosting. 8-10V - F - N T hreshold Shift. 2-27. 2-27. S e lf - Boos ted - 58 -
2-5- 1-2. NAND / (Verify ) 2-28 2-29. DCB SBL ( / 0/ Vcc ). BLSHF Fully ON blsh (Vth 1.8V ) 0V. SBL Off, Iref. ( "0"), 1V 0V Iref. Vth ( 1.8V ) 1blsh 0V Shut - Off X, Iref X Vcc. - 59 -
2-28. NAND Iref X Vcc 0 Vcc 0V. - 60 -
2-29., ( "1") - 3V 0V Iref. 0.6V, blsh ON. Iref X 0.6V 0 0.6V (< Vth ) Off. - 61 -
2-5- 1-3. (Re dunda ncy) 4M NAND - EEPROM, 2 (Row ) 4 (Column ). 1 1NAND 512, 8. NOR EPROM 1 (1- ), NAND - 1 8 ( ) 1NAND., NOR, NAND. 1 8I/ O 1,024. 2-30.,. -.,.. NOR NAND. - 62 -
2-30. 2-5- 1-4. 2-31 (DRAM, SRAM ) ( 4.5V ). NAND NOR 2-3 1. - 63 -
Vcc 2-32 Dick son ' s Charge Pum p". 2-32. D ic ks o n's 2-32 Dickson H.V., C Cp ( C > > Cp). Vin, 2-32, V out Vout. 2-5 - 2. EEPROM.. - 64 -
2-5- 2-1. (Endur ance), /.,, Row Vpp, 0.. 5m s, 10m s 10,000 150., /. EEPROM. 2-5- 2-2. Vpp Vpp /..., Vpp. 2-5- 2-3. Screening,., - 65 -
., 0V,, 1V, 1 1V, 0 1V., 1 0. 2-5- 2-4.,,. - 66 -
2-6. 2-6 - 1.... 2-6- 2. SAS (S e lf Align e d S ou rc e ). SA S (Self Aligned Source). 2-6 - 3.... 2-6- 4. ON O.. ONO. - 67 -
2-6 - 5. 2 2. 2-6 - 6. (A c c e s s )... 100ns. - : 70 150n s - : 2 10 / Byte - : 1.5 sec/ - / : 10 ( ) 2-6 - 7.. NOR., 0.18 m 256M, 0.15 m 1G. 2-6 - 8.. - 68 -
... 3V 1.8V., DC/ DC. 2-6 - 9.., NOR NAND 10. EPROM 10 2, EEPROM 10 5, 10 4 10 5. EEPROM. 2-6 - 1 0.... 64M, 256M, 1G. - 69 -
2-7. 2-7 - 1. 2-7 - 1-1. NOR, Band - to- Band. NAND Vpgm Vpass. 2-7 - 1-2.., (retention ). - 70 -
2-7 - 1-3.,. EEPROM. (Endur ance) N OR, NAND EEPROM CHE NOR Band - to- Band. N OR (Vth ).. 2-7 - 2. M OS Si/ SiO 2 M OS.,,. - 71 -
2-7 - 3. M OS,,,... 2-7 - 4.. ONO 3-6MV/ cm.,. N a+.,, Inter Later Dielectric (ILD) BP SG P SG N a +. - 72 -
2-8. 2-8 - 1. EW S 1 2% ( ), 1/ 2 1/ 4. :,, F DD HDD. 2-8 - 2. 16M.,. - 73 -
2-8- 2-1. EP RO M EPROM /. EPROM, /. EPROM,.,.. 2-8- 2-2. MASK- ROM, EPROM,.,. OS. 64K 256K., 4M, 16M. - 74 -
OS..,,,. 2-8 - 3. PCM CIA - A T A... 20M 40M. A T A. 2-8 - 4. PC,,,. 2. - 75 -
, A T A. A T A. DOS F A T.. (F F S - 2, F T L 2 ),. A T A.. M. FAX,,., (FF S - S F T L ), A T A. - 76 -
2-9.,,,. 2-8, 2-33. 2-8. D A T A P ROCE S S IN G T E LE COM M U N ICA T IO - Computer Centr al Office Sw itch M ain Fr am e PBX/ LAN/ Cellular/ PH S Super Cordless Phone Midr ange Dig. Answ ering M achine W orkst ation F ax/ Public Phone Handheld P ager Subnotebook M odem Laptop Desktop IN D U S T RIA L Deskside T ester M obile Com puter M edical Instrum ent s V ending M achine OT HE R D A T A P ROCE S S IN G Hard Disk Driver CON S U M ER Optical Disk Driver Org anizer s P age Printer s Arcade Gam e/ Hom e Gam es Serial Printer s Gam e Soft/ HDT V/ Set T op Copier Box/ Instrum ent s W ord Processor K ar aoke/ CD ROM/ Digit al POS Cam er a Solid St ate Disk VT R/ DVD/ Cam corder s/ Voice F lash M em ory Cards Recoder s T RA N S P ORT A T ION Car N avig ation Air - bag - 77 -
2-33. 2-9 - 1. HDD, 2-34 HDD Plug Compatible.,, SCSI IDE PC HDD. IC., OS - 78 -
.,,. 2-34. HDD (HDD Plug Compatible ) 2-9 - 2. 2-35,. HDD Plug Com patible HDD, OS,. IC PC. FF S (F lash File Sy stem ), M S - DOS V5.0 ROM. 2-35. (OS ) - 79 -
2-9 - 3. / Post,. RF Post RF. RF.., 2-36. RF EEPROM/. RF. 2-36. RF - 80 -
2-9 - 4. B IO S / PC BIOS (B asic Input Output Sy stem ). BIOS PC U ser. (Boot Block ) (P ar am eter Block M ain Block ) BIOS. EPROM OPT., A SSP. 2-9 - 5. PC (F DD ) (HDD), PC SRAM. DRAM. RAM RAM PROM. RAM. RAM. - 81 -