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1 21..,.. SOI(Silicon on Insulator) SOI IC., Sub-systemisolation.. SiC, GaN, AlN, ZnO SiC,,, (Silicon Carbide) 21. 1) 1000~2700 (Fig. 1). 3C, 4H, 6H, 15R, 200, Hexagonal type. 2),, Micropipe, Fig. 1. SiC. 3) 64

2 Fig. 2. SiC. Planar Defect, Dislocation, Carbon Inclusion (SiC). SiC SiC. (a) SiC Si C. SiC Stoichiometric Compound 200, (Cubic), (Hexagonal), (Rhombohedral). SiC. SiC Acheson (Petrolium coke) (SiO 2) [SiO 2+3C->SiC+2CO], (b) Fig. 3. (a)sic, (b) Si SiC..,,,. SiC-SiC 3C-SiC 70, 170, Table 1. SiC 4) 3C 4H 6H Cubic Hexagonal Hexagonal ABCABC ABACABAC ABCACBABCACB [g/cm 3 ] [ε r] [m 0 ] 0.25~ ~ ~2.0 [m 0 ] 0.6 ~1 ~1 [Å] a=3.0730, c= a=3.0806, c= C 4H 6H [ev] [MV/cm] 1 3~5 3~5 (300K)[cm 2 /VS] <800 <900 <400 (300K)[cm 2 /VS] <320 <120 <90 65

-SiC. 3C-SiC, 4H-SiC, 6H-SiC,,. SiC Table 1 (~2.710 7 cm/s), (~3MV/cm) (~5.0W/cm). Fig. 3(a) Si SiC Si. SiC Fig. 3(b) 4 6. C Si SiC Si C 1.89ÅSi Si 2.35Å., SiCSi. SiC, SiC Si C SiC. SiC Si GaAs.

3 -SiC. 3C-SiC, 4H-SiC, 6H-SiC,,. SiC Table 1 (~ cm/s), (~3MV/cm) (~5.0W/cm). Fig. 3(a) Si SiC Si. SiC Fig. 3(b) 4 6. C Si SiC Si C 1.89ÅSi Si 2.35Å., SiCSi. SiC, SiC Si C SiC. SiC Si GaAs., SiC,. SiC. Fig. 4. Acheson SiC. 5) SiC Micropipe( ) (Mobility) Diode Killer Defect,. SiC MPD (Micropipe Density). SiC (Epitaxial Layer). SiC 1892 Acheson(Fig. 4) Table 2. SiC 6) Sublimation HTCVD VLS LPE Vapor Liquid Solid Hetero-Epitaxy Liquid Phase Epitaxy Typical Growth 200 to 400 /h ~300/h 100/h 50/h 500/h Growth Temperature 2200 to to 1800 Polytype Obtained 4H & 6H 4H & 6H 3C 3C 4H & 6H Cree(US) SiCrystal(D) Main Player -(US) DowCorning(US) Norstel(SW) CRHEA(F) Hoya(J) Sumitomo(J) Nippon Steel(J) Bridgestone(J) 66

. Table 2,. 3.1. Lely J. A. Lely 1955 SiC, Lely. SiC SiC powder,, 2200~2700, SiC. SiC. (Fig. 5), 6H-SiC 75~95% 4H, 15R- SiC. 8H, 21R, 33R-SiC. Lely. 3.2. LPE(Liquid Phase Epitaxy) Sumitomo,.

4 . Table 2, Lely J. A. Lely 1955 SiC, Lely. SiC SiC powder,, 2200~2700, SiC. SiC. (Fig. 5), 6H-SiC 75~95% 4H, 15R- SiC. 8H, 21R, 33R-SiC. Lely LPE(Liquid Phase Epitaxy) Sumitomo,. Point Defect, Stress., 4H-SiC 6H-SiC (500/h). 5) Si C Parasitic., Si (Crucible). Siliconized Graphite Crucible Crucible Graphite Film. Si, C 1700, Si. LPE,. LPE Solvent. Fig. 5. SiC Lely. 7) 3.3. CVD(Chemical Vapor Deposition) Si (SiH 4, SiCl 4 ) (CH 4, C 2H 4, C 3H 8 ) SiC. CVD., CVD C/Si, Micropipe., Epitaxial. CVD(Fig. 6) 1500~

, SiC SiC (Seed Crystal).,, ( T)., SiC Si, Si 2C SiC 2, 8) Si C SiC. Sublimation,.

5 2~3/h... HTCVD(high Temperature Chemical Vapor Deposition) 5). Fig. 6. SiC CVD. 6) 3.4. Sublimation(Modified Lely) Sublimation(), Tairov Tsvetkov Ziegler. Lely,., SiC SiC (Seed Crystal).,, ( T)., SiC Si, Si 2C SiC 2, 8) Si C SiC. Sublimation,.,,,,., SiC (Closed System), (Fig. 7). Sublimation SiC SiC. Graphite Fig. 7. Sublimation. 68

6 (a) Sublimation (b) Graphite (c) Initial Stage (d) Initial Stage (e) Initial Stage Cross Section (f) Epitaxial layer KOH Fig. 8. Sublimation. 69

7 ( Inner Tube ), (Fig. 8.(b)) Initial Stage (Fig. 8.(c~e)), Epilayer (Fig. 8.(f)), Gas Sublimation. 9-11) 3.5. (1) VLS(Vapor Liquid Solidification) : Carbon Si SiC. Si 1500, Si 3C-SiC.. 5) (2)Hetero-epitaxy SiC on Silicon : Si SiC Epitaxial., SiC Si. 5) SiC 90% / LED.,,, GaN SiC. SiC. SiC 1, Fig. 9, 5kV. Fig. 9. SiC. E max n- n, n. SiC E max 10 n 10, ρ 1/100 1/10. n- l 1/10., SiC n cm -3, 35 n- R1/1,000. pn Si 30. 1/10,

8 Fig. 10. SiC. 12), MOSFET MOS (Schottky Diodes) MESFET, RF SiC. Fig. 10. Schottky (Switching)., Si Schottky,, 80V. SiC Kneifel SiC Schottky, 1000V. Itoh Edge Termination B 1100~1750V, Cooper Ni Ti 1720V, 1500V. MOSFET. SiC MOSFET Si10, SiC Si SiO 2., SiC/SiO 2 Interface Trap State. JFET On-Resistance,. JFET p+ Schottky SiC MESFET, SiC MOSFET. Dr. Philip G, Neudeck 100V SiC JFET, Cree Research Inc. 850MHz 1.3W/min SiC lateral JFET. SiC 1893 (),. SiC ( ) 1998 Charles & Colvard Lab-created SiC. Charles & Colvard SiC 2.65( : 2.42), 71

Fig. 11. SiC(). 13) 0.104 2.36(Fig. 8), 10 1. 13) 1999 SiC. 12, SiC MOSFET Schottky, MESFET IC SiC.

9 Fig. 11. SiC(). 13) (Fig. 8), ) 1999 SiC. 12, SiC MOSFET Schottky, MESFET IC SiC. 14), NASA Glenn Research Center Cree, Westinghouse, Rockwell International Science Center, Kulite Semicond. Product, ATM, Northrop Grumman.,,,,,,,,,,.,,,,,,,,,. 17), 3, 4,,,, Micropipe, Dislocation. Micropipe SiC. 15), MESFET JFET, 17) SBD MOSFET Si 70% SiC. 16) SiC 27%. SiC 80%, 20% ,000 SiC, SiC. 18,19) SiC 72

SiC Si. Fig. 12. SiC. 19) SiC. 2010 11 SiC 2.

20) SiC 10 (WPM, World Premier Material) SiC.

10 SiC Si. Fig. 12. SiC. 19) SiC SiC 2. 6%, SiC , 80% SiC. 4 SiC, ) SiC 10 (WPM, World Premier Material) SiC %. 1/100 SiC. 14). SiC,,,.. WPM SiC,. (a) (b) Fig. 13. (FCV) (a) (b). 21) 73

1., SiC, 99 2., A study on the etch pits morphology and the defects in as-grown SiC single crystal, Journal of the Korean Association of Crystal Growth, Vol. 10, No. 6, p.373-377, 2000. 3. N.W.

National Compound Semiconductor Road-Map. 5. W.F. Knippenberg, Philips Research Reports, 18, No. 3, 161-274, (1963) 6.

11 1., SiC, 99 2., A study on the etch pits morphology and the defects in as-grown SiC single crystal, Journal of the Korean Association of Crystal Growth, Vol. 10, No. 6, p , N.W. Jepps and T.F. Page, Polytypic transformation in Silicon Carbidein Crystal growth and charactenzation of polytype structures, Chap. Eds, P. krishina(pergamon press. Oxford), National Compound Semiconductor Road-Map. 5. W.F. Knippenberg, Philips Research Reports, 18, No. 3, , (1963) 6. YOLE DEVELOPPEMENT, Wide bandgap materials and devices for RF applications Market Analysis, March Schaffer, W.j, et al., Conducivity Anisotropy in Epitaxial 6H and 4H-SiCMat. Res. Soc. symp. Pros., Materials Research Society, Vol.339, P , ,, SiC, 156, p3-10, Kap-Ryeol Ku, Jung-Gyu Kim, Jong-Doo Seo, Ju- Young Lee, Myung-Ok Kyun, Won-Jae Lee, Geun- Hyoung Lee, Il-Soo Kim, and Byoung-Shul Shin High Quality SiC Crystal grown by the Physical Vapor Transport Method with a New Crucible Design Materials Science Forum Vols pp (2006). 10. Jung Woo Choi, Chang Hyun Son, Jong Mun Choi, Gi Sub Lee, Won Jae Lee, Il Soo Kim, Byoung Chul Shin, Kap Ryeol Ku Initial Stage Modification for 6H-SiC Single Crystal Grown by the Physical Vapor Transport (PVT) MethodMaterials Science Forum Vols pp.7-10 (2009). 11. Jung Doo Seo, Joon Ho An, Jung Gon Kim, Jung Kyu Kim, Myung Ok Kyun, Won Jae Lee, Il Soo Kim, Byoung Chul Shin, Kap Ryeol Ku An Inserted Epitaxial Layer for SiC Single Crystal Growth by the Physical Vapor Transport MethodMaterials Science Forum Vols pp.9-12 (2006). 12. YOLE DEVELOPMENT, SiC market Analysis for Material, Devices and Applications , SiC, 1412, p11-14, Daisuke Nakamura, Itaru Gunjishima, Satoshi Yamaguchi, Tadashi Ito, Atsuto Okamoto, Hiroyuki, Shoichi Onda and Kazumasa Takatori. Ultrahighquality silicon carbide single crystalnature 430, (26 August 2004) % SiC KISTI (GTB) , (SiC),. 18. YOLE DEVELOPMENT, SiC05: Silicon Carbide Market Analysis. 19. YOLE DEVELOPMENT, SiC 2010 (10 year market projection). 20. () p NIKKEI ELECTRONICS ASIA p40 December(2008) KAIST 1995 KAIST 1996~1997 North Carolina State University 1997~2002 ETRI 2009~2010 University of Maryland at College Park 2002~ 74

KAERIAR hwp

KAERIAR hwp - i - - ii - - iii - - iv - - v - - vi - Photograph of miniature SiC p-n and Schottky diode detector Photograph SiC chip mounted on a standard electrical package Photograph of SiC neutron detector with