KEIT PD(15-10)-내지.indd

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1 / KEIT PD / KEIT PD / SUMMARY,, , , % 13 6,000 2%, 90%,,,,,,, ㆍ ㆍ,,,

KEIT PD Issue Report PD ISSUE REPORT OCTOBER 2015 VOL 15-10 1.

Transistor), BJT(Bipolar Junction Transistor), Thyristor - MOSFET

2 KEIT PD Issue Report PD ISSUE REPORT OCTOBER 2015 VOL (AC DC, DC AC), (, ),, MOSFET, IGBT(Insulated Gate Bipolar Transistor), BJT(Bipolar Junction Transistor), Thyristor - MOSFET IGBT BJT, Thyristor - (Device), (IC) (Module),,,,,, (HEV) (EV), ( ) -, *, IGBT

3 ISSUE 1,, WBG(Wide Band Gap) - SiC(Silicon Carbide), GaN(Gallium Nitride), - (HEV) (EV) - SiC 900V 3 PV, HEV EV, GaN SiC,, HEV EV, 2 GaN, Silicon SiC - SiC - GaN 6/8 Si, EMI, IC Korea Evaluation Institute of Industrial Technology 15

KEIT PD Issue Report PD ISSUE REPORT OCTOBER 2015 VOL 15-10

bulk wafer epi wafer - WBG : GaN, SiC - - Si :

Formation -, IC - Si : Thinning, Trench(Device) BCD(IC) -

PKG, Module - PKG, - - ( ) Fuji Electric, HITACHI, ABB,

Rectifier, STMicro, Vishay Power Integration Richtek

Vipryamitel, Danfoss LSPST, IXYS, Vincotech, POWEREX,

Fairchild, KEC, Magnachips, AUK Maple,, KERI, Maple,, LG,

TrinnoTech, Powercubesemi, Semihow, Power Device,,,,,, LG,

4 KEIT PD Issue Report PD ISSUE REPORT OCTOBER 2015 VOL Wafer PKG/Module Application Power Device Power IC - Si : bulk wafer epi wafer - WBG : GaN, SiC - - Si : Superjunction, PN jnuction - WBG : Normally off, Gate Formation -, IC - Si : Thinning, Trench(Device) BCD(IC) - WBG :, - (Trench, Thinning ) - Si : PKG, Module - WBG : PKG, Module - PKG, - - ( ) Fuji Electric, HITACHI, ABB, Mitsubishi, Toshiba Infineon, Fairchild, International Rectifier, STMicro, Vishay Power Integration Richtek Technology, Monolithic Power Systems, Volterra Electro Vipryamitel, Danfoss LSPST, IXYS, Vincotech, POWEREX, SEMIKRON Schneider, YASAKAWA, SIEMENS, LS, Ingeteam Fairchild, KEC, Magnachips, AUK Maple,, KERI, Maple,, LG, ETRI, KETI, LG,,,,, KOPTI LG, SKC, SK Innovation,,, TrinnoTech, Powercubesemi, Semihow, Power Device,,,,,, LG, MAPS, ia, ETRI Fairchild, Magnachips SK,,,, SP, AMKOR, DS, LSPST,,, KETI LS, LG,,,, LG SiC IC Si PKG/Module GaN 3 16 한국산업기술평가관리원

5 ISSUE 1 파워반도체산업현황분석및투자방향 Wafer,,, /,, / - Application -, /, / Application - Application, / KEC, SK, ASML, AMAT , , % 4 * : isuppli (2013, : ) Korea Evaluation Institute of Industrial Technology 17

6 KEIT PD Issue Report PD ISSUE REPORT OCTOBER 2015 VOL Safety and Control(11.1%), Power Train(10.6%), Medical Electronics(6.5%), Energy Generation & Distribution(5.7%), Building & Home Control(7.3%), Automation(7.1%), Mobile Infrastructure(15.1%) Voltage Regulators, PMIC IC 53%, MOSFET, IGBT 38% - IC % % % % SiC GaN,,, 5 Positioning * : Yole (2014) - WBG IT, % % 18 한국산업기술평가관리원

7 ISSUE 1 파워반도체산업현황분석및투자방향 6 SiC, GaN * : Yole (2012, 2014) years long-term market forecast for SiC devices in various power applications (EV/HEV nominal scenario) Korea Evaluation Institute of Industrial Technology R&D / High T / Others Ships & Vessels Smart Grid Power Source: Yole Developpement (2014) 19

KEIT PD Issue Report PD ISSUE REPORT OCTOBER 2015 VOL 15-10 SiC, -

SiC MOSFET -, CREE, IBS -,, Size (2013 sales) 7 SiC Business Model * :

8 KEIT PD Issue Report PD ISSUE REPORT OCTOBER 2015 VOL SiC, - CREE, Rohm 650V 1700V SiC MOSFET, - SiC MOSFET Planar DMOSFET, Trench - SiC MOSFET -, CREE, IBS -,, Size (2013 sales) 7 SiC Business Model * : Yole (2014) - 5% all-sic Large Source: Yole Developpement (2014) $5M 20 Medium

9 ISSUE 1 파워반도체산업현황분석및투자방향 GaN -, -, - EPC 200V GaN Trans phorm 600/1200V - GaN RF IT, / 600V Level shifter, 1200V Magnetic Coupling Capacitive Coupling Type Gate Driver Level Shifter Opto-Coupler Magnetic Coupling Capacitive Coupling Block Diagram - NO Galvanic isolation - Finite Turn-on Time - HV Umitation - Galvanic isolation - LED - Finite Life Time - Special Package - Limited Speed International Rectifier Fairchild, Avago - Galvanic isolation - Possible High Voltage isolation - Polyimide isolation Infineon, Analog Devices 8 - Galvanic isolation - Stable SiO2 isolation - Parasitic Coupling HV Level Shifter Optocoupler Transformer Capacitive Coupling Level Shifter Tx Tx Rx Rx Tx Tx Rx Texas Instrument Rx - WBG - SiC, GaN NMOS Passive, SOI 600V, 200 WBG Korea Evaluation Institute of Industrial Technology 21

10 KEIT PD Issue Report PD ISSUE REPORT OCTOBER 2015 VOL IPM, mm (CoolMOS) SiC GaN CREE 600V SiC SBD 1200V/1700V SBD 1200V SiC DMOSFET BJT MOSFET SiC, GPT 1700V SiC SBD MOSFET, IGBT SiC GaN /,,, RF, 9 1 OptiMOS 300mm (CoolMOS) SiC GaN CREE SiC, SiC 1 SiC IGBT 6 SiC SiC MOSFET 900V, 1200V 1700V line-up GaN 22 한국산업기술평가관리원

11 ISSUE 1 파워반도체산업현황분석및투자방향 ST IR () NXP 1,, (PowerWise) 2011 TI,, PMIC AP PMIC Rectifier, FRD Power MOSFET, IGBT IT,,,, MOSFET, IGBT ㆍ IC,, ,,, 2 IGBT, MOSFET m ohm 30V 'MDmesh PlusTM Low Qg' MOSFET 100V 95% AG IC DC-DC, AC-DC PMIC 90% BiCDMOS N- N- MOSFET mm GaN-on-Si GaN, /, 2012 RF (IPM) Korea Evaluation Institute of Industrial Technology 23

12 KEIT PD Issue Report PD ISSUE REPORT OCTOBER 2015 VOL /, PMIC, MOSFET % , 100V, MOSFET * : ETRI (2015.6), / IC ( 100V) LG, SiC, LG 2016 SiC - SiC, SiC SOI 650V ㆍ / LS LC kw IGBT,,, LED, 24 한국산업기술평가관리원

13 ISSUE 1 파워반도체산업현황분석및투자방향 LG SK nm ,, MOSFET 2011 SiC SiC SBD MOSFET IGBT 2011 WBG,, ICT PC 2010 M8 CIS, DDI, PMIC 1999 LCD,, PMIC,, IC, MOS IGBT, LSI 300mm S 45nm FPGA, 2012 CPU' PMIC ~900V Si MOSFET 1700V SiC SBD SiC ~900V Si MOSFET 400V~1350V Si IGBT, (MOCVD) 12(300mm), DDI, 2006 PMIC LED IC 2 BMIC PMIC DC/DC 60V PMIC 0.35um, MOSFET, BJT, IC, IGBT 2011 kw IGBT V (IGBT) * : ETRI (2015.6) Korea Evaluation Institute of Industrial Technology 25

14 KEIT PD Issue Report PD ISSUE REPORT OCTOBER 2015 VOL SWOT () 13 6,000 2%, LG KEC, MOSFET 1,000, (IGBT, Thyristor ) IC 1,000,,, 90% WBG ( ),,,, KEC, SiC GaN - KEC, / MOSFET Si () () % 50, PMIC IC () 69.2%, 1.6 (100%) (93.1%) (92%) (69.2%) (55.4%),, 26 한국산업기술평가관리원

15 ISSUE 1 파워반도체산업현황분석및투자방향 * : (2013) SiC 70~80% GaN V GaN-on-Si V, SWOT, LG, supply-chain - WBG - R&D Strength,, LG, Global Opportunity, (6~8) Weakness - - WBG Threat Infineon, Mitsubishi,, GaN timeto-market 5. SiC/GaN FET - SiC 650V/900V 1200V (30A)-(50A ) 4500V Korea Evaluation Institute of Industrial Technology 27

16 KEIT PD Issue Report PD ISSUE REPORT OCTOBER 2015 VOL GaN 900V on-resistance Super-junction IGBT - 600V IGBT Super-junction Concept trade-off, 1200V/1700V IGBT MOSFET - Shielded Trench Gate MOSFET, 200V Super Junction Power MOSFET Application Smart FET IPM - SiC GaN High Temperature Device Package Material, Power Cycle, Latest chip power IC IoT/ smart power IC - IC, IoT, - SiC,, SiC,,,,,,,,,, () 1.,,, KEIT PD Issue Report, 14-7, R&BD - [ /] -, (2015) 3. ( ), (2015) 28 한국산업기술평가관리원

KEIT PD(15-11)-수정1차.indd

KEIT PD(15-11)-수정1차.indd / KEIT SW PD / KEIT SW PD SUMMARY * (, 2013) : 3(2010) 5(2013) 6(2018E) ICT (,, CPS),, (, ) (,,, ) ICT - - - - -, -, -, -,, - ( ~ ~ ) - CPS, IoT, -- KEIT PD Issue Report PD ISSUE REPORT NOVEMBER 2015 VOL