g/m 2 day atm 이하, 산소투과율이 10-3 cm 3 /m 2 day atm 이하로낮추어야유연한 플라스틱기판에서활용이가능하다.
Barrier requirements for different product sectors[4] Application Required properties of encapsulation material Water vapor Oxygen Other requirement Permeability Permeability Encapsulation of Solar modules <0.01 [g/m 2 day atm] not relevant [cm 3 /m 2 day atm] spectral transmittance VIP (vacuum insulating panels) 8 10-2 <3 10-3 high reflectance for thermal radiation LED displays OLED displays <0.01~0.1 <10-6 <0.01~0.1 <10-3 transparency in the visible spectral region
OLED Coating Barrier layer Planarizing layer Flexible Plastic Film
Low partial pressure side P1 C1 C2 A High partial pressure side P2 d
D p S
cm 3 /m day atm cm 3 /m 2 day atm
또는
와 이다 g/m 2 day atm을
cm 3 /m 2 day atm cm 3 /m 2 day atm
100 q H /t(r 0 =1) 10 1 0.01 0.1 1 10 100 d 1000 100 q H /t (d=1) 10 1 0.1 0.01 0.01 0.1 1 10 100 R 0
r LV cosθ 기체 r SV θ r SL 액체 고체
PES Glass
100 100 90 90 Transmittance [%] 80 70 60 50 40 30 20 Tranmittance Reflectance 80 70 60 50 40 30 20 Reflectance [%] 10 10 0 0 400 600 800 1000 1200 1400 1600 1800 2000 Wavelength [nm] 10 Loss { 100-(T+R)} [%] 9 8 7 6 5 4 3 2 PES Glass PES Glass 1 0 400 500 600 700 800 Wavelength [%]
1.51 Refractive Index 1.50 0Temperature [ C 1.49 5 1]T C 1.48 1.47 0 20 40 60 80 100 120 140 g= 1.72 0.00025 Refractive Index 1.70 1.68 1.66 1.64 1.62 1.60 Refractive Index Extiction coefficient 0.00020 0.00015 0.00010 0.00005 0.00000 Extinction Coefficient 400 500 600 700 800 Wavelength [nm]
P o lym er transp o rt layer 50nm Light Emitting Polymer-50nm IT O 200nm barrier layer substrate Lig ht ou tp u t
pinhole debris dim ple Light scattering from surface defect nodule Pinhole Substrate Substrate Substrate Bum p from protruding filler particle Dent in surface Debris sitting on surface
(a) (b)
5.7nm non-treatment 5.4nm treatment 15nm non-treatment 14nm treatment
A
WVTR [g/m2/ day] 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 Sputtering Cleaning +Sputtering Cleaning +Supttering+Ion assist 0 20 40 60 80 100 120 140 160 Thickness[nm] 9 8 7 WVTR [g/m 2 day] 6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 180 200 220 Thickness [nm]
Tansmittance [%] 89.90 89.85 89.80 89.75 89.70 89.65 89.60 89.55 n=1.45992 n=1.45532 89.50 600 620 640 660 680 700 Wavelength [nm]
92 Transmittance [%] 90 88 86 84 82 bare PES sputter cleaning +sputter cleaning+sputter+ion assist 400 500 600 700 800 Wavelength [nm] 94 92 Transmittance [%] 90 88 86 84 82 bare PES 22nm 45.7nm 64.5nm 110nm 170nm 212nm 80 400 500 600 700 800 Wavelength [nm]
12 10 WVTR [g/m 2 /day] 8 6 4 2 0 0 20 40 60 80 100 Thickness [nm] 90 88 Trancemittance [%] 86 84 82 80 78 76 Bare PES 30 nm 50 nm 71 nm 95 nm 400 500 600 700 800 Wavelength [nm]
coating H 2 O coating H 2 O WVTR WVTR SiOx[110nm] SiOxNy[50nm] SiOxNy[25nm] SiOx[55nm] SiOxNy[13nm] SiOx[23nm] SiOxNy[13nm] SiOxNy[50nm] SiOx[110nm] SiOxNy[25nm] SiOx[23nm] SiOxNy[13nm] SiOx[55nm] SiOx[23nm] PES PES PES PES
1 = 1 P 2 1.53 + 1 3.44 =0.94 1 = 1 P 4 3.5 + 1 5.1 + 1 3.5 + 1 5.1 =0.96 1 = 1 P 6 5.34 + 1 8.2 + 1 5.34 + 1 8.2 + 1 5.34 + 1 8.2 =0.92
1.8912 1.657
10 9 8 [air/siox(88.40 nm)/sioxny(87.33 nm)/pes] [air/siox(100.6 nm)/sioxny(58.90 nm)/pes] Reflectance [%] 7 6 5 4 3 2 1 0 400 500 600 700 800 Wavelength [nm] 11 Reflectance [%] 10 9 8 7 측정한반사율설계한반사율 6 400 500 600 700 800 Wavelength [nm]