Datasheet / FS770R08A6P2LB

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1 HybridPACK DriveModule FinalDataSheet V3., AutomotiveHighPower

HybridPACK DriveModule 1Features/Description HybridPACK DrivemodulewithEDT2IGBTandDiode T T T VCES = 75 V IC = 77 A Typical Applications Automotive Applications Hybrid Electrical Vehicles (H)EV Motor

2 HybridPACK DriveModule 1Features/Description HybridPACK DrivemodulewithEDT2IGBTandDiode T T T VCES = 75 V IC = 77 A Typical Applications Automotive Applications Hybrid Electrical Vehicles (H)EV Motor Drives Commercial Agriculture Vehicles Electrical Features Blocking voltage 75V Low VCEsat Low Switching Losses Low Qg and Crss Low Inductive Design Tvj op = 15 C Short-time extended Operation Temperature Tvj op = 175 C Mechanical Features 4.2kV DC 1sec Insulation High Creepage and Clearance Distances Compact design High Power Density Direct Cooled Base Plate with Ribbon Bonds Guiding elements for PCB and cooler assembly Integrated NTC temperature sensor PressFIT Contact Technology RoHS compliant UL 94 V module frame Description The HybridPACK TM Drive is a very compact six-pack module optimized for hybrid and electric vehicles. The product FS77R8A6P2FB comes with a flat baseplate and bonded cooling structure and is a 75V/77A module derivate within the HybridPACK Drive family. The power module implements the new EDT2 IGBT generation, which is an automotive Micro-Pattern Trench-Field-Stop cell design optimized for electric drive train applications. The chipset has benchmark current density combined with short circuit ruggedness and increased blocking voltage for reliable inverter operation under harsh environmental conditions. The EDT2 IGBTs also show excellent light load power losses, which helps to improve system efficiency over a real driving cycle. The EDT2 IGBT was optimized for applications with switching frequencies in the range of 1 khz. The new HybridPACK TM Drive power module family comes with mechanical guiding elements supporting easy assembly processes for customers. Furthermore, the press-fit pins for the signal terminals avoid additional time consuming selective solder processes, which provides cost savings on system level and increases system reliability. The products in the HybridPACK Drive family with flat baseplate FS66R8A6P2FB; PinFin baseplate FS82R8A6P2B as well as the FS77R8A6P2B derivate allow a very cost effective scaling for different inverter power levels at a minimum inverter design effort. Product Name Ordering Code SP V3.,

3 2 IGBT,Inverter 2.1 Maximum Rated Values Parameter Conditions Symbol Value Unit Collector-emitter voltage VCES 75 V Implemented collector current ICN 77 A Continuous DC collector current TF = 75 C, Tvj max = 175 C IC nom 45 1) A Repetitive peak collector current tp = 1 ms ICRM 154 A Total power dissipation TF = 75 C, Tvj max = 175 C Ptot 654 1) W Gate-emitter peak voltage VGES +/-2 V 2.2 Characteristic Values min. typ. max. Collector-emitter saturation voltage Gate threshold voltage IC = 45 A, VGE = 15 V IC = 45 A, VGE = 15 V IC = 45 A, VGE = 15 V IC = 77 A, VGE = 15 V IC = 77 A, VGE = 15 V IC = 9.6 ma, VCE = VGE VCE sat VGEth ,1 Gate charge VGE = -8 V V, VCE = 4V QG 4.4 µc Internal gate resistor RGint.7 Ω Input capacitance f = 1 MHz, VCE = 5 V, VGE = V Cies 8. nf Output capacitance f = 1 MHz, VCE = 5 V, VGE = V Coes 1. nf Reverse transfer capacitance f = 1 MHz, VCE = 5 V, VGE = V Cres.3 nf Collector-emitter cut-off current VCE = 75 V, VGE = V VCE = 75 V, VGE = V Gate-emitter leakage current VCE = V, VGE = 2 V IGES 4 na Turn-on delay time, inductive load Rise time, inductive load Turn-off delay time, inductive load Fall time, inductive load Turn-on energy loss per pulse Turn-off energy loss per pulse SC data IC = 45 A, VCE = 4 V VGE = -8 V / +15 V RGon = 2.4 Ω IC = 45 A, VCE = 4 V VGE = -8 V / +15 V RGon = 2.4 Ω IC = 45 A, VCE = 4 V VGE = -8 V / +15 V RGoff = 5.1 Ω IC = 45 A, VCE = 4 V VGE = -8 V / +15 V RGoff = 5.1 Ω IC = 45 A, VCE = 4 V, LS = 2 nh VGE = -8 V / +15 V RGon = 2.4 Ω di/dt (Tvj 25 C) = 55 A/µs di/dt (Tvj 15 C) = 5 A/µs IC = 45 A, VCE = 4 V, LS = 2 nh VGE = -8 V / +15 V RGoff = 5.1 Ω dv/dt (Tvj 25 C) = 31 V/µs dv/dt (Tvj 15 C) = 25 V/µs VGE 15 V, VCC = 4 V VCEmax = VCES -LsCE di/dt tp 6 µs, tp 3 µs, ICES td on tr td off tf Eon Eoff V V ma µs µs µs µs mj mj Thermal resistance, junction to cooling fluid per IGBT; V/ t = 1 dm³/min, TF = 75 C RthJF.13 2).153 2) K/W Temperature under switching conditions top continuous for 1s within a period of 3s, occurence maximum 3 times over lifetime ISC Tvj op A 15 3) 175 C 1) Verified by characterization / design not by test. 2) For cooler design see application note AN-HPD-ASSEMBLY. Cooling fluid 5% water / 5% ethylenglycol. 3) For Tvjop > 15 C: Baseplate temperature has to be limited to 125 C. 3

4 3 Diode, Inverter 3.1 Maximum Rated Values Parameter Conditions Symbol Value Unit Repetitive peak reverse voltage VRRM 75 V Implemented forward current IFN 77 A Continuous DC forward current IF 45 1) A Repetitive peak forward current tp = 1 ms IFRM 154 A I²t - value VR = V, tp = 1 ms, VR = V, tp = 1 ms, I²t Characteristic Values min. typ. max. Forward voltage Peak reverse recovery current Recovered charge Reverse recovery energy IF = 45 A, VGE = V IF = 45 A, VGE = V IF = 45 A, VGE = V IF = 77 A, VGE = V IF = 77 A, VGE = V IF = 45 A, - dif/dt = 5 A/µs () VR = 4 V VGE = -8 V IF = 45 A, - dif/dt = 5 A/µs () VR = 4 V VGE = -8 V IF = 45 A, - dif/dt = 5 A/µs () VR = 4 V VGE = -8 V Thermal resistance, junction to cooling fluid per diode; V/ t = 1 dm³/min, TF = 75 C RthJF.185 2).217 2) K/W Temperature under switching conditions top continuous for 1s within a period of 3s, occurence maximum 3 times over lifetime VF IRM Qr Erec Tvj op A²s A²s V A µc mj 15 3) 175 C 4 NTC-Thermistor min. typ. max. Parameter Conditions Symbol Value Unit Rated resistance TC = 25 C R25 5. kω Deviation of R1 TC = 1 C, R1 = 493 Ω R/R -5-5 % Power dissipation TC = 25 C P25 2. mw B-value R2 = R25 exp [B25/5(1/T2-1/(298,15 K))] B25/ K B-value R2 = R25 exp [B25/8(1/T2-1/(298,15 K))] B25/ K B-value R2 = R25 exp [B25/1(1/T2-1/(298,15 K))] B25/ K Specification according to the valid application note. 1) Verified by characterization / design not by test. 2) For cooler design see application note AN-HPD-ASSEMBLY. Cooling fluid 5% water / 5% ethylenglycol. 3) For Tvjop > 15 C: Baseplate temperature has to be limited to 125 C. 4

5 5 Module Parameter Conditions Symbol Value Unit Isolation test voltage RMS, f = Hz, t = 1 sec VISOL 4.2 kv Maximum RMS module terminal current TF = 75 C, TCt = 15 C ItRMS 5 1) A Material of module baseplate Cu+Ni 2) Internal isolation basic insulation (class 1, IEC 6114) Al2O3 3) Creepage distance Clearance terminal to heatsink terminal to terminal terminal to heatsink terminal to terminal Comperative tracking index CTI > 2 min. typ. max. Pressure drop in cooling circuit V/ t = 1. dm³/min; TF = 75 C p 87 4) mbar Maximum pressure in cooling circuit Tbaseplate < 4 C Tbaseplate > 4 C (relative pressure) dcreep dclear p mm mm 3. 5) 2.5 bar Stray inductance module LsCE 8. nh Module lead resistance, terminals - chip TF = 25 C, per switch RCC'+EE'.75 mω Storage temperature Tstg C Mounting torque for modul mounting Screw M4 baseplate to heatsink Screw EJOT Delta PCB to frame M ) Nm.55 Weight G 65 g 1) Continous, steady state. Verified by characterization / design not by test. 2) Ni plated Cu baseplate. 3) Improved Al2O3 ceramic. 4) For cooler design see application note AN-HPD-ASSEMBLY. Cooling fluid 5% water / 5% ethylenglycol. 5) According to application note AN-HPD-ASSEMBLY. 6) EJOT Delta PT WN x1. Effective mounting torque according to application note AN-HPD-ASSEMBLY 5

6 6 Characteristics Diagrams output characteristic IGBT,Inverter (typical) IC = f (VCE) VGE = 15 V output characteristic IGBT,Inverter (typical) IC = f (VCE) VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V IC [A] 8 7 IC [A] ,,2,4,6,8 1, 1,2 1,4 1,6 1,8 2, 2,2 VCE [V] ,,4,8 1,2 1,6 2, 2,4 2,8 3,2 3,6 4, VCE [V] transfer characteristic IGBT,Inverter (typical) IC = f (VGE) VCE = 2 V switching losses IGBT,Inverter (typical) Eon = f (IC), Eoff = f (IC), VGE = +15 V / -8 V, RGon = 2.4 Ω, RGoff = 5.1 Ω, VCE = 4 V Eon, Eoff, Eon, Eoff, IC [A] E [mj] VGE [V] IC [A] 6

7 switching losses IGBT,Inverter (typical) Eon = f (RG), Eoff = f (RG), VGE = +15V / -8V, IC = 45 A, VCE = 4 V Eon, Eoff, Eon, Eoff, transient thermal impedance IGBT,Inverter ZthJF = f (t), cooler design according to AN-HPD-ASSEMBLY V/ t = 1 dm³/min; Tf = 75 C; 5% water / 5% ethylenglycol 1 ZthJF : IGBT 1,1 E [mj] 8 6 ZthJF [K/W] 4, RG [Ω] i: ri[k/w]: τi[s]: 1,5,1 2,5,3 3,68,25 4,3 1,5,1,1,1,1 1 1 t [s] reverse bias safe operating area IGBT,Inverter (RBSOA) IC = f (VCE) VGE = +15V / -8V, RGoff = 5,1 Ω, IC [A] IC, Modul IC, Chip VCE [V] thermal impedance IGBT,Inverter RthJF = f ( V/ t), cooler design according to AN-HPD-Assembly Tf = 75 C; 5% water / 5% ethylenglycol RthJF [K/W],175,17,165,16,155,15 RthJF: IGBT, V/ t [dm³/min] 7

8 capacity characteristic IGBT,Inverter (typical) C = f(vce) VGE = V,, f = 1MHz 1 gate charge characteristic IGBT,Inverter (typical) VGE = f(qg) VCE = 4 V, IC = 45 A, 15 Cies Coes Cres 12 QG C [nf] VGE [V] , VCE [V] QG [µc] maximum allowed collector-emitter voltage VCES = f(tvj), verified by characterization / design not by test ICES = 1 ma for Tvj 25 C; ICES = 3 ma for Tvj > 25 C VCES forward characteristic of Diode, Inverter (typical) IF = f (VF) VCES [V] 725 IF [A] Tvj [ C] ,,2,4,6,8 1, 1,2 1,4 1,6 1,8 2, 2,2 VF [V] 8

9 switching losses Diode, Inverter (typical) Erec = f (IF), RGon = 2.4 Ω, VCE = 4 V Erec, Erec, switching losses Diode, Inverter (typical) Erec = f (RG), IF = 45 A, VCE = 4 V Erec, Erec, E [mj] 12 1 E [mj] IF [A] RG [Ω] transient thermal impedance Diode, Inverter ZthJF = f (t), cooler design according to AN-HPD-ASSEMBLY V/ t = 1 dm³/min; Tf = 75 C; 5% water / 5% ethylenglycol 1 ZthJC : Diode thermal impedance Diode, Inverter RthJF = f ( V/ t), cooler design according to AN-HPD-ASSEMBLY Tf = 75 C; 5% water / 5% ethylenglycol,24 RthJF: Diode,235,23,1,225 ZthJC [K/W] RthJF [K/W],22,1,215,21 i: ri[k/w]: τi[s]: 1,15,1 2,1,3 3,68,25 4,34 1,5,25,1,1,1,1 1 1 t [s], V/ t [dm³/min] 9

10 NTC-Thermistor-temperature characteristic (typical) R = f (T) 1 Rtyp pressure drop in cooling circuit p = f ( V/ t), cooler design according to AN-HPD-ASSEMBLY Tf = 75 C; 5% water / 5% ethylenglycol 18 p: Modul R[Ω] p [mbar] TC [ C] V/ t [dm³/min] 1

11 7 Circuit diagram P1 P2 P3 C1 C3 C5 T T1 T2 G1 G3 G5 E1 C2 U E3 C4 V E5 C6 W T T3 T4 G2 G4 G6 T5 E2 E4 E6 T N1 N2 N3 T6 11

12 8 Package outlines 12

13 9 Label Codes 9.1 Module Code Code Format Data Matrix Encoding ASCII Text Symbol Size 16x16 Standard IEC2472 and IEC1622 Code Content Content Module Serial Number Module Material Number Production Order Number Datecode (Production Year) Datecode (Production Week) Digit Example (below) Example Packing Code Code Format Code128 Encoding Code Set A Symbol Size 34 digits Standard IEC Code Content Content Backend Construction Number Production Lot Number Serial Number Date Code Box Quantity Identifier X 1T S 9D Q Digit Example (below) X3E Example X T2X3ES754389D1139Q15 13

14 Revision History Major changes since previous revision Revision History Reference Date Description V V

15 Terms & Conditions of usage Edition Published by Infineon Technologies AG Munich, Germany 218 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. These components are not designed for special applications that demand extremely high reliability or safety such as aerospace, defense or life support devices or systems (Class III medical devices). If you intend to use the components in any of these special applications, please contact your local representative at International Rectifier HiRel Products, Inc. or the Infineon support ( to review product requirements and reliability testing. Infineon Technologies components may be used in special applications only with the express written approval of Infineon Technologies. Class III medical devices are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Trademarks Trademarks of Infineon Technologies AG AURIX, C166, CanPAK, CIPOS, CIPURSE, EconoPACK, CoolMOS, CoolSET, CORECONTROL, CROSSAVE, DAVE, DI-POL, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPIM, EconoPACK, EiceDRIVER, eupec, FCOS, HITFET, HybridPACK, I²RF, ISOFACE, IsoPACK, MIPAQ, ModSTACK, my-d, NovalithIC, OptiMOS, ORIGA, POWERCODE, PRIMARION, PrimePACK, PrimeSTACK, PRO-SIL, PROFET, RASIC, ReverSave, SatRIC, SIEGET, SINDRION, SIPMOS, SmartLEWIS, SOLID FLASH, TEMPFET, thinq!, TRENCHSTOP, TriCore. Other Trademarks Advance Design System (ADS) of Agilent Technologies, AMBA, ARM, MULTI-ICE, KEIL, PRIMECELL, REALVIEW, THUMB, µvision of ARM Limited, UK. AUTOSAR is licensed by AUTOSAR development partnership. Bluetooth of Bluetooth SIG Inc. CAT-iq of DECT Forum. COLOSSUS, FirstGPS of Trimble Navigation Ltd. EMV of EMVCo, LLC (Visa Holdings Inc.). EPCOS of Epcos AG. FLEXGO of Microsoft Corporation. FlexRay is licensed by FlexRay Consortium. HYPERTERMINAL of Hilgraeve Incorporated. IEC of Commission Electrotechnique Internationale. IrDA of Infrared Data Association Corporation. ISO of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB of MathWorks, Inc. MAXIM of Maxim Integrated Products, Inc. MICROTEC, NUCLEUS of Mentor Graphics Corporation. MIPI of MIPI Alliance, Inc. MIPS of MIPS Technologies, Inc., USA. murata of MURATA MANUFACTURING CO., MICROWAVE OFFICE (MWO) of Applied Wave Research Inc., OmniVision of OmniVision Technologies, Inc. Openwave Openwave Systems Inc. RED HAT Red Hat, Inc. RFMD RF Micro Devices, Inc. SIRIUS of Sirius Satellite Radio Inc. SOLARIS of Sun Microsystems, Inc. SPANSION of Spansion LLC Ltd. Symbian of Symbian Software Limited. TAIYO YUDEN of Taiyo Yuden Co. TEAKLITE of CEVA, Inc. TEKTRONIX of Tektronix Inc. TOKO of TOKO KABUSHIKI KAISHA TA. UNIX of X/Open Company Limited. VERILOG, PALLADIUM of Cadence Design Systems, Inc. VLYNQ of Texas Instruments Incorporated. VXWORKS, WIND RIVER of WIND RIVER SYSTEMS, INC. ZETEX of Diodes Zetex Limited. Last update

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Datasheet / FS660R08A6P2FLB

Datasheet / FS660R08A6P2FLB HybridPCK DriveModule FinalDataSheet V3.,9-5- utomotivehighpower HybridPCK Drive Module Features / Description HybridPCK Drive module with EDT IGBT and Diode T T T VCES = 75 V IC = Typical pplications