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1 HybridPACK LightModule FinalDataSheet AutomotiveHighPower

2 Features/Description VCES = 7V IC nom = A / ICRM = A TypicalApplications HybridElectricalVehicles(H)EV Optimized for automotive applications with DC link voltagesupto5v ElectricalFeatures Increasedblockingvoltagecapabilityto75V LowSwitchingLosses Tvjop=5 C TrenchIGBT VCEsatwithpositiveTemperatureCoefficient Description The HybridPACK TM Light is a very compact six-pack module (75V/A) targeting mild hybrid vehicles with power levels up to kw. The module is based on established solder and screw interconnections known from HybridPACK TM. Improved stray inductance and blocking voltage offer lowest conduction and switching losses especially at inverter maximum ratings. MechanicalFeatures.5kVACminInsulation AlOSubstratewithLowThermalResistance Highmechanicalrobustness IntegratedNTCtemperaturesensor CopperBasePlate RoHScompliant ProductName OrderingCode SP588

3 IGBT,Inverter.MaximumRatedValues Parameter Conditions Symbol Value Unit Collector-emittervoltage Tvj = 5 C VCES 75 V ContinuousDCcollectorcurrent TC = 75 C, Tvj max = 75 C IC nom A Repetitivepeakcollectorcurrent tp = ms ICRM A Totalpowerdissipation TC = 5 C, Tvj max = 75 C Ptot 6 W Gate-emitterpeakvoltage VGES +/- V.CharacteristicValues min. typ. max. Collector-emittersaturationvoltage IC = A, VGE = 5 V IC = A, VGE = 5 V IC = A, VGE = 5 V Tvj = 5 C Tvj = 5 C Gatethresholdvoltage IC =, ma, VCE = VGE Tvj = 5 C VGEth,9 5,8 6,5 V Gatecharge VGE = -5 V... 5 V QG,5 µc Internalgateresistor Tvj = 5 C RGint, Ω Inputcapacitance f = MHz, VCE = 5 V, VGE = V Tvj = 5 C Cies, nf Reversetransfercapacitance f = MHz, VCE = 5 V, VGE = V Tvj = 5 C Cres,8 nf Collector-emittercut-offcurrent VCE = 5 V, VGE = V Tvj = 5 C ICES, ma Gate-emitterleakagecurrent VCE = V, VGE = V Tvj = 5 C IGES na Turn-ondelaytime,inductiveload Risetime,inductiveload Turn-offdelaytime,inductiveload Falltime,inductiveload Turn-onenergylossperpulse Turn-offenergylossperpulse SCdata IC = A, VCE = V VGE = ±5 V RGon =, Ω IC = A, VCE = V VGE = ±5 V RGon =, Ω IC = A, VCE = V VGE = ±5 V RGoff =, Ω IC = A, VCE = V VGE = ±5 V RGoff =, Ω IC = A, VCE = V, LS = 5 nh VGE = ±5 V, di/dt = 5 A/µs () RGon =, Ω IC = A, VCE = V, LS = 5 nh VGE = ±5 V, du/dt = 5 V/µs () RGoff =, Ω VGE 5 V, VCC = 6 V VCEmax = VCES -LsCE di/dt Tvj = 5 C Tvj = 5 C Tvj = 5 C Tvj = 5 C Tvj = 5 C Tvj = 5 C Tvj = 5 C Tvj = 5 C Tvj = 5 C Tvj = 5 C Tvj = 5 C Tvj = 5 C tp 6 µs, Thermalresistance,junctiontocase perigbt RthJC,8 K/W Thermalresistance,casetoheatsink perigbt λpaste=w/(m K)/λgrease=W/(m K) VCE sat td on tr td off tf Eon Eoff ISC,5,6,7,,,,5,6,6,,6,7,,6,7,,5,7 6, 7,5 8,,7 V µs µs µs µs mj mj RthCH,6 K/W Temperatureunderswitchingconditions top continuous Tvj op - 5 C A

4 Diode,Inverter.MaximumRatedValues Parameter Conditions Symbol Value Unit Repetitivepeakreversevoltage Tvj = 5 C VRRM 75 V ContinuousDCforwardcurrent IF A Repetitivepeakforwardcurrent tp = ms IFRM A I²t-value VR = V, tp = ms, Tvj = 5 C VR = V, tp = ms,.characteristicvalues min. typ. max. Forwardvoltage Peakreverserecoverycurrent Recoveredcharge Reverserecoveryenergy IF = A, VGE = V IF = A, VGE = V IF = A, VGE = V IF = A, - dif/dt = 5 A/µs () VR = V VGE = -5 V IF = A, - dif/dt = 5 A/µs () VR = V VGE = -5 V IF = A, - dif/dt = 5 A/µs () VR = V VGE = -5 V Tvj = 5 C Tvj = 5 C Tvj = 5 C Tvj = 5 C Tvj = 5 C Tvj = 5 C Tvj = 5 C Tvj = 5 C Thermalresistance,junctiontocase perdiode RthJC,55 K/W Thermalresistance,casetoheatsink perdiode λpaste=w/(m K)/λgrease=W/(m K) I²t VF IRM Qr Erec,55,5,5 99, 5 6,9,5 7,,8,,,9 A²s A²s V A A A µc µc µc mj mj mj RthCH, K/W Temperatureunderswitchingconditions top continuous Tvj op - 5 C NTC-Thermistor min. typ. max. Parameter Conditions Symbol Value Unit Ratedresistance TC = 5 C R5 5, kω DeviationofR TC = C, R = 9 Ω R/R 5 5 % Powerdissipation TC = 5 C P5, mw B-value R = R5 exp [B5/5(/T - /(98,5 K))] B5/5 75 K B-value R = R5 exp [B5/8(/T - /(98,5 K))] B5/8 K B-value R = R5 exp [B5/(/T - /(98,5 K))] B5/ K Specificationaccordingtothevalidapplicationnote.

5 5Module Parameter Conditions Symbol Value Unit Isolationtestvoltage RMS, f = 5 Hz, t = min. VISOL,5 kv Materialofmodulebaseplate Cu Internalisolation basicinsulation(class,iec6) AlO Creepagedistance Clearance terminaltoheatsink terminaltoterminal terminaltoheatsink terminaltoterminal Comperativetrackingindex CTI > min. typ. max. Strayinductancemodule LsCE nh Moduleleadresistance,terminals-chip TC=5 C,perswitch RCC'+EE',5 mω Storagetemperature Tstg - 5 C Mountingtorqueformodulmounting ScrewM5baseplatetoheatsink M, 6, Nm Terminalconnectiontorque ScrewM6 M, - 6, Nm Weight G g dcreep dclear, 6,, 6, mm mm 5

6 6CharacteristicsDiagrams outputcharacteristicigbt,inverter(typical) IC=f(VCE) VGE=5V 5 Tvj = 5 C Tvj = 5 C outputcharacteristicigbt,inverter(typical) IC=f(VCE) Tvj=5 C 5 VGE = 9V VGE = 7V VGE = 5V VGE = V VGE = V VGE = 9V 5 5 IC [A] IC [A] ,,,,6,8,,,,6,8,,,,6 VCE [V],,5,,5,,5,,5,,5 5, VCE [V] transfercharacteristicigbt,inverter(typical) IC=f(VGE) VCE=V 5 Tvj = 5 C Tvj = 5 C switchinglossesigbt,inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±5V,RGon=.Ω,RGoff=.Ω,VCE=V 6 Eon, Tvj = 5 C Eoff, Tvj = 5 C Eon, Eoff, 5 IC [A] E [mj] VGE [V] IC [A] 6

7 switchinglossesigbt,inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±5V,IC=A,VCE=V 5 Eon, Tvj = 5 C Eoff, Tvj = 5 C Eon, Eoff, transientthermalimpedanceigbt,inverter ZthJC=f(t) ZthJC : IGBT, E [mj] 5 ZthJC [K/W], RG [Ω] i: ri[k/w]: τi[s]:,857,6,9,68558,75,69,576,76787,,,, t [s] reversebiassafeoperatingareaigbt,inverter(rbsoa) IC=f(VCE) VGE=±5V,RGoff=.Ω,Tvj=5 C 5 Ic, Modul IC, Chip forwardcharacteristicofdiode,inverter(typical) IF=f(VF) 5 Tvj = 5 C Tvj = 5 C 5 5 IC [A] 5 IF [A] VCE [V],,,,6,8,,,,6,8, VF [V] 7

8 switchinglossesdiode,inverter(typical) Erec=f(IF) RGon=.Ω,VCE=V 6 5 Erec, Tvj = 5 C Erec, switchinglossesdiode,inverter(typical) Erec=f(RG) IF=A,VCE=V 5 Erec, Tvj = 5 C Erec, E [mj] E [mj] IF [A] RG [Ω] transientthermalimpedancediode,inverter ZthJC=f(t) NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) ZthJC : Diode Rtyp, ZthJC [K/W] R[Ω], i: ri[k/w]: τi[s]:,,75,8759,969,98,785,97,5958,,,, t [s] TC [ C] 8

9 7Circuitdiagram

10 HybridPACKª Light Module F 8 Package outlines, () 7,,,86,67,9 9,9,7 7 () 6 (5,5) (55) G H 7 A 7,75 8 (9) () x measurement height for Pin Position tolerance (see detail G) B C GE ,85 A B C-D Signalpin position tolerance, measurement height (see detail H-H), A B C-D R5 mm deep () 5 x, A B C-D 8 x C GE C GE GE 8x 5x,5 A B C-D,65 A B C-D Signalpin position tolerance, measurement height (see detail H-H) (7) 9,5,6,8,5 G E NTC x G E 8x 5x B H-H ( : ) G(5:) 7 x for screw,5 mm mm deep, A B C-D 7,7,86 8,8 6, 9,9 7,5 7,7,8,57,95 D C A 8, 7 A 76 5 A 5 C 6,65 A B C-D D 6 x H 78, () (9) 8 7,75 8,9,57 6,76 (55) (5,5) 6 () 7 E C 5x Screw M6 - mm deep 5,5, ISO 85 principle of independency dimensions ISO 5 GG target geometry according CAD file with general tolerances method of Drawing: D56_.B edges general tolerances surface least-squares DIN ISO. DIN 67-TG6 DIN EN ISO. DIN ISO 768-mk 75 All dimensions refer to module in delivery condition 6 5 V., 5--

11 HybridPACKª Light Module 9 Label Codes 9. Module Code Code Format Data Matrix Encoding ASCII Text Symbol Size 6x6 Standard IEC7 and IEC6 Code Content Content Module Serial Number Module Material Number Production Order Number Datecode (Production Year) Datecode (Production Week) Digit Example (below) Example Packing Code Code Format Code8 Encoding Code Set A Symbol Size digits Standard IEC8859- Code Content Content Backend Construction Number Production Lot Number Serial Number Date Code Box Quantity Identifier X T S 9D Q Digit Example (below) XE Example X955669TXES7589D9Q5 V., 5--

12 HybridPACKª Light Module Revision History Major changes since previous revision Revision History Reference Date Description V. -9- Initial Version V. -- preliminary data V. 5-- final data V., 5--

13 HybridPACKª Light Module Terms & Conditions of usage Edition -5- Published by Infineon Technologies AG 876 Munich, Germany Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Trademarks Trademarks of Infineon Technologies AG AURIX, C66, CanPAK, CIPOS, CIPURSE, EconoPACK, CoolMOS, CoolSET, CORECONTROL, CROSSAVE, DAVE, DI-POL, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPIM, EconoPACK, EiceDRIVER, eupec, FCOS, HITFET, HybridPACK, I²RF, ISOFACE, IsoPACK, MIPAQ, ModSTACK, my-d, NovalithIC, OptiMOS, ORIGA, POWERCODE, PRIMARION, PrimePACK, PrimeSTACK, PRO-SIL, PROFET, RASIC, ReverSave, SatRIC, SIEGET, SINDRION, SIPMOS, SmartLEWIS, SOLID FLASH, TEMPFET, thinq, TRENCHSTOP, TriCore. Other Trademarks Advance Design System (ADS) of Agilent Technologies, AMBA, ARM, MULTI-ICE, KEIL, PRIMECELL, REALVIEW, THUMB, µvision of ARM Limited, UK. AUTOSAR is licensed by AUTOSAR development partnership. Bluetooth of Bluetooth SIG Inc. CAT-iq of DECT Forum. COLOSSUS, FirstGPS of Trimble Navigation Ltd. EMV of EMVCo, LLC (Visa Holdings Inc.). EPCOS of Epcos AG. FLEXGO of Microsoft Corporation. FlexRay is licensed by FlexRay Consortium. HYPERTERMINAL of Hilgraeve Incorporated. IEC of Commission Electrotechnique Internationale. IrDA of Infrared Data Association Corporation. ISO of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB of MathWorks, Inc. MAXIM of Maxim Integrated Products, Inc. MICROTEC, NUCLEUS of Mentor Graphics Corporation. MIPI of MIPI Alliance, Inc. MIPS of MIPS Technologies, Inc., USA. murata of MURATA MANUFACTURING CO., MICROWAVE OFFICE (MWO) of Applied Wave Research Inc., OmniVision of OmniVision Technologies, Inc. Openwave Openwave Systems Inc. RED HAT Red Hat, Inc. RFMD RF Micro Devices, Inc. SIRIUS of Sirius Satellite Radio Inc. SOLARIS of Sun Microsystems, Inc. SPANSION of Spansion LLC Ltd. Symbian of Symbian Software Limited. TAIYO YUDEN of Taiyo Yuden Co. TEAKLITE of CEVA, Inc. TEKTRONIX of Tektronix Inc. TOKO of TOKO KABUSHIKI KAISHA TA. UNIX of X/Open Company Limited. VERILOG, PALLADIUM of Cadence Design Systems, Inc. VLYNQ of Texas Instruments Incorporated. VXWORKS, WIND RIVER of WIND RIVER SYSTEMS, INC. ZETEX of Diodes Zetex Limited. Last update -- V., 5--

14 w w w. i n f i n e o n. c o m Published by Infineon Technologies AG

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