Datasheet / FS820R08A6P2B

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1 HybridPCK DriveModule FinalDataSheet V3.,7-3-9 utomotivehighpower

Features / Description HybridPCK Drive module with EDT IGBT and Diode T T T VCES = 7V IC nom = / ICRM = Typical pplications utomotive pplications Hybrid Electrical Vehicles (H)EV Motor Drives

2 Features / Description HybridPCK Drive module with EDT IGBT and Diode T T T VCES = 7V IC nom = / ICRM = Typical pplications utomotive pplications Hybrid Electrical Vehicles (H)EV Motor Drives Commercial griculture Vehicles Description The HybridPCKTM Drive is a very compact six-pack module (7V/) optimized for hybrid and electric vehicles. The power module implements the new EDT IGBT generation, which is an automotive Micro-Pattern Trench-Field-Stop cell design optimized for electric drive train applications. The chipset has benchmark current density combined with short circuit ruggedness and increased blocking voltage for reliable inverter operation under harsh environmental conditions. The EDT IGBTs also show excellent light load power losses, which helps to improve system efficiency over a real driving cycle. The EDT IGBT was optimized for applications with switching frequencies in the range of khz. Electrical Features Blocking voltage 7V Low VCEsat Low Switching Losses Low Qg and Cres Low Inductive Design Tvj op = C Short-time extended Operation Temperature Tvj op = 7 C The new HybridPCKTM Drive power module family comes with mechanical guiding elements supporting easy assembly processes for customers. Furthermore, the press-fit pins for the signal terminals avoid additional time consuming selective solder processes, which provides cost savings on system level and increases system reliability. The direct cooled baseplate with PinFin structure in the product best utilizes the implemented chipset and shows superior thermal characteristics. Due to the high clearance & creepage distances, the module family is also well suited for increased system working voltages and supports modular inverter approaches. Mechanical Features.kV DC sec Insulation High Creepage and Clearance Distances Compact design High Power Density Direct Cooled Base Plate Guiding elements for PCB and cooler assembly Integrated NTC temperature sensor PressFIT Contact Technology RoHS compliant UL 9 V module frame Product Name Ordering Code SP997 V3., 7-3-9

3 IGBT,Inverter. Maximum Rated Values Parameter Conditions Symbol Value Unit Collector-emitter voltage Tvj = C VCES 7 V ICN Continuous DC collector current TF = C, Tvj max = 7 C IC nom ) Repetitive peak collector current tp = ms ICRM Total power dissipation TF = 7 C, Tvj max = 7 C Ptot 7) W VGES +/- V Implemented collector current Gate-emitter peak voltage. Characteristic Values Collector-emitter saturation voltage min. IC =, VGE = V IC =, VGE = V IC =, VGE = V Tvj = C VCE sat typ. max V IC =, VGE = V IC =, VGE = V Tvj = C Gate threshold voltage IC = 9. m, VCE = VGE Tvj = C VGEth Gate charge VGE = - V... V, VCE = V QG. µc Tvj = C RGint.7 Ω Internal gate resistor.3..9.,. V Input capacitance f = MHz, VCE = V, VGE = V Tvj = C Cies. nf Output capacitance f = MHz, VCE = V, VGE = V Tvj = C Coes. nf Reverse transfer capacitance f = MHz, VCE = V, VGE = V Tvj = C Cres.3 Collector-emitter cut-off current VCE = 7 V, VGE = V VCE = 7 V, VGE = V Tvj = C ICES Gate-emitter leakage current VCE = V, VGE = V Tvj = C IGES Turn-on delay time, inductive load IC =, VCE = V VGE = - V / + V RGon =. Ω Tvj = C IC =, VCE = V VGE = - V / + V RGon =. Ω Rise time, inductive load Turn-off delay time, inductive load Fall time, inductive load Turn-on energy loss per pulse Turn-off energy loss per pulse n µs Tvj = C tr.7.. µs IC =, VCE = V VGE = - V / + V RGoff =. Ω Tvj = C Tvj = C td off.9.. µs IC =, VCE = V VGE = - V / + V RGoff =. Ω Tvj = C tf... µs IC =, VCE = V, LS = nh VGE = - V / + V RGon =. Ω di/dt (Tvj C) = /µs di/dt (Tvj C) = /µs Tvj = C IC =, VCE = V, LS = nh VGE = - V / + V RGoff =. Ω dv/dt (Tvj C) = 3 V/µs dv/dt (Tvj C) = V/µs Tvj = C tp µs, Tvj = C tp 3 µs, Eon mj Eoff mj Thermal resistance, junction to cooling fluid per IGBT; V/ t = dm³/min, TF = 7 C RthJF Temperature under switching conditions top continuous for s within a period of 3s, occurence maximum times over lifetime Tvj op 3) m td on VGE V, VCC = V VCEmax = VCES -LsCE di/dt )..9.3 SC data ) nf. 39 ISC.).) K/W - 3) 7 C Verified by characterization / design not by test. Cooler design and flow direction according to application note N-HPD-SSEMBLY. Cooling fluid % water / % ethylenglycol. For Tvjop > C: Baseplate temperature has to be limited to C. 3 V3., 7-3-9

4 3 Diode, Inverter 3. Maximum Rated Values Parameter Conditions Repetitive peak reverse voltage Tvj = C Symbol Value Unit VRRM 7 V Implemented forward current IFN Continuous DC forward current IF ) Repetitive peak forward current tp = ms I²t - value VR = V, tp = ms, VR = V, tp = ms, IFRM I²t 9 ²s ²s 3. Characteristic Values Forward voltage Peak reverse recovery current Recovered charge Reverse recovery energy min. typ. max IF =, VGE = V IF =, VGE = V IF =, VGE = V Tvj = C IF =, VGE = V IF =, VGE = V Tvj = C IF =, - dif/dt = /µs () VR = V VGE = - V Tvj = C IRM 3 37 IF =, - dif/dt = /µs () VR = V VGE = - V Tvj = C Qr... µc IF =, - dif/dt = /µs () VR = V VGE = - V Tvj = C Erec mj VF V.7. Thermal resistance, junction to cooling fluid per diode; V/ t = dm³/min, TF = 7 C RthJF Temperature under switching conditions top continuous for s within a period of 3s, occurence maximum times over lifetime Tvj op NTC-Thermistor.7).) K/W 3) 7 - min. typ. C max. Parameter Conditions Symbol Value Rated resistance TC = C Unit R. kω Deviation of R TC = C, R = 93 Ω Power dissipation TC = C B-value R = R exp [B/(/T - /(9, K))] B/ 337 K B-value R = R exp [B/(/T - /(9, K))] B/ 3 K B-value R = R exp [B/(/T - /(9, K))] B/ 333 K R/R P %. mw Specification according to the valid application note. ) ) 3) Verified by characterization / design not by test. Cooler design and flow direction according to application note N-HPD-SSEMBLY. Cooling fluid % water / % ethylenglycol. For Tvjop > C: Baseplate temperature has to be limited to C. V3., 7-3-9

5 Module Parameter Conditions Isolation test voltage RMS, f = Hz, t = sec Symbol VISOL Material of module baseplate Value Unit. kv Cu+Ni) lo3) Internal isolation basic insulation (class, IEC ) Creepage distance terminal to heatsink terminal to terminal dcreep mm Clearance terminal to heatsink terminal to terminal dclear.. mm CTI Comperative tracking index min. Pressure drop in cooling circuit Maximum pressure in cooling circuit V/ t =. dm³/min; TF = 7 C Tbaseplate < C Tbaseplate > C (relative pressure) TF = C, per switch Storage temperature Mounting torque for modul mounting Screw M baseplate to heatsink Screw EJOT Delta PCB to frame Weight Maximum RMS module terminal current 3) mbar.. p Stray inductance module Module lead resistance, terminals - chip p > typ. max. LsCE. nh RCC'+EE'.7 mω Tstg - M.... Nm..) G Tf = 7 C; TCt = C bar ItRMS C g ) Ni plated Cu baseplate. Improved lo3 ceramic. Cooler design and flow direction according to application note N-HPD-SSEMBLY. Cooling fluid % water / % ethylenglycol. ) EJOT Delta PT WN 3x. Effective mounting torque according to application note N-HPD-SSEMBLY ) 3) V3., 7-3-9

6 Characteristics Diagrams output characteristic IGBT,Inverter (typical) IC = f (VCE) VGE = V output characteristic IGBT,Inverter (typical) IC = f (VCE) Tvj = C Tvj = C 9 9 IC [] IC [] VGE = 9V VGE = 7V VGE = V VGE = 3V VGE = V VGE = 9V,,,,,,,,,,,, VCE [V] transfer characteristic IGBT,Inverter (typical) IC = f (VGE) VCE = V,,,,,,, VCE [V], 3, 3,, 9 switching losses IGBT,Inverter (typical) Eon = f (IC), Eoff = f (IC), VGE = + V / - V, RGon =. Ω, RGoff =. Ω, VCE = V 7 Tvj = C Eon, Eoff, Eon, Eoff, E [mj] IC [] VGE [V] IC [] V3., 7-3-9

7 switching losses IGBT,Inverter (typical) Eon = f (RG), Eoff = f (RG), VGE = +V / -V, IC =, VCE = V transient thermal impedance IGBT,Inverter ZthJF = f (t), cooler design according to N-HPD-SSEMBLY V/ t = dm³/min; Tf = 7 C; % water / % ethylenglycol Eon, Eoff, Eon, Eoff, ZthJF : IGBT, E [mj] ZthJF [K/W], i: 3 ri[k/w]:,,,, τi[s]:,,3,, RG [Ω],, reverse bias safe operating area IGBT,Inverter (RBSO) IC = f (VCE) VGE = +V / -V, RGoff =, Ω, Tvj = 7 C,, t [s] thermal impedance IGBT,Inverter RthJF = f ( V/ t), cooler design according to N-HPD-ssembly Tf = 7 C; % water / % ethylenglycol, RthJF: IGBT,,, RthJF [K/W] IC [] 9,,,,3 IC, Modul IC, Chip,3 VCE [V], V/ t [dm³/min] 3 V3., 7-3-9

8 capacity charcteristic IGBT,Inverter (typical) C = f(vce) VGE = V, Tvj = C, f = MHz gate charge characteristic IGBT,Inverter (typical) VGE = f(qg) VCE = V, IC =, Tvj = C QG Cies Coes Cres 9 C [nf] VGE [V] 3-3 -, -9 VCE [V] maximum allowed collector-emitter voltage VCES = f(tvj), verified by characterization / design not by test ICES = m for Tvj C; ICES = 3 m for Tvj > C 3 QG [µc] forward characteristic of Diode, Inverter (typical) IF = f (VF) VCES 77 Tvj = C 7 9 IF [] VCES [V] Tvj [ C],,,,,,,,,,,, VF [V] V3., 7-3-9

9 switching losses Diode, Inverter (typical) Erec = f (IF), RGon =. Ω, VCE = V switching losses Diode, Inverter (typical) Erec = f (RG), IF =, VCE = V Erec, Erec, Erec, Erec, E [mj] E [mj] IF [] 9 transient thermal impedance Diode, Inverter ZthJF = f (t), cooler design according to N-HPD-SSEMBLY V/ t = dm³/min; Tf = 7 C; % water / % ethylenglycol RG [Ω] thermal impedance Diode, Inverter RthJF = f ( V/ t), cooler design according to N-HPD-SSEMBLY Tf = 7 C; % water / % ethylenglycol, ZthJC : Diode RthJF: Diode,,,, ZthJC [K/W] RthJF [K/W],,,,,,9 i: 3 ri[k/w]:,,,, τi[s]:,,3,,,,,, t [s],9, V/ t [dm³/min] 3 V3., 7-3-9

10 NTC-Thermistor-temperature characteristic (typical) R = f (T) pressure drop in cooling circuit p = f ( V/ t), cooler design according to N-HPD-SSEMBLY Tf = 7 C; % water / % ethylenglycol p: Modul Rtyp R[Ω] p [mbar] TC [ C] 7 9 V/ t [dm³/min] 3 V3., 7-3-9

11 7 Circuit diagram P3 P P T C C3 C T T G G3 E E3 G E 3 T C C C G G G E E E T T T3 T T3 N3 N N V3., 7-3-9

12 Package outlines g%r#>!>r!%$ ( # [ \ &c &c!r>>!>r!% ( >R>> ;! "!R& ;" a! [\ () &cq;!f;#da!fa#s &c # ^ ' "%R%>!>R!!$R>>!>R" &c!&r>>!>r" * ""R"%!>R$!&R"% ZRV%!>R$ %R>>!>R$ >R>> " >R& a" ;# a# " >R% "!R& ' *B () Wc _ >R>>!%R%>!>R% B" \" )" B$ \$ )$ &R#%!>R% b! b# b" b$ b% \# B# \! B! &&R%>!>R% B& \& )& $R>>!>R# b& \% B% )! )# )% ' )!R>>!>R!% #c W"R>> WVR>>!>R$ Z>RV%!>R$ ZWR"%!>$R"%!>R$ W"R>> ` C I ) B #c!$r>>!>r" f "%R%>!>R! #c # T ">R& "!R& ' ft () #cqcd`dis ()* " # & # ' e Zd \$,F #F$+ C# C+ b# b+ C, b, " F$FF Z$FF / $ F$-! Zd Z <B7 <B979< P= / em M + J+ ^+ - J- ^-. J. ^. V c Df +gj+g^+g-gj-g^-g.gj.g^. %#$Z% %\$,%.Y$#%.\$Z% Y-$#F Z+$FF,$\- h) F$, F$% =P=7!!#$. ( #Z$Z% EJOT Delta PT WN 3 x!f$z `# `, `+ `- ^# J# `% `. ^% J% ^, J,, # K a % O "#\$Y%' =@[9?& FFF-,\F, <?7?9=@T T= 7>=P@H #E WC WC JC WXS WC WXS #,Y#% #.Y-+)`^#,F+ +E WC WXS +Y.Z)BV /TT <B9797 =P= B<>T 9 <T=f H9<9! " #$% & # ' "!F$Z!#$Z / Vc +-d + J+ ^+ X?9@T b9 X?9@T b9 T=@9H7 V3., 7-3-9

13 HybridPCK Drive Module 9 Label Codes 9. Module Code Code Format Data Matrix Encoding SCII Text Symbol Size x Standard IEC7 and IEC Code Content Content Module Serial Number Module Material Number Production Order Number Datecode (Production Year) Datecode (Production Week) Digit Example (below) Example Packing Code Code Format Code Encoding Code Set Symbol Size 3 digits Standard IEC9- Code Content Content Backend Construction Number Production Lot Number Serial Number Date Code Box Quantity Identifier X T S 9D Q Digit Example (below) 99 X3E Example X99TX3ES739D39Q 3 V3., 7-3-9

14 HybridPCK Drive Module Revision History Major changes since previous revision Revision History Reference Date Description V. -- Increased ICRM and minor revisions, based on FSRPB revision. V. -- Preliminary datasheet. V Final datasheet 3. V3., 7-3-9

15 HybridPCK Drive Module Terms & Conditions of usage Edition --3 Published by Infineon Technologies G 7 Munich, Germany Infineon Technologies G ll Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Trademarks Trademarks of Infineon Technologies G URIX, C, CanPK, CIPOS, CIPURSE, EconoPCK, CoolMOS, CoolSET, CORECONTROL, CROSSVE, DVE, DI-POL, EasyPIM, EconoBRIDGE, EconoDUL, EconoPIM, EconoPCK, EiceDRIVER, eupec, FCOS, HITFET, HybridPCK, I²RF, ISOFCE, IsoPCK, MIPQ, ModSTCK, my-d, NovalithIC, OptiMOS, ORIG, POWERCODE, PRIMRION, PrimePCK, PrimeSTCK, PRO-SIL, PROFET, RSIC, ReverSave, SatRIC, SIEGET, SINDRION, SIPMOS, SmartLEWIS, SOLID FLSH, TEMPFET, thinq!, TRENCHSTOP, TriCore. Other Trademarks dvance Design System (DS) of gilent Technologies, MB, RM, MULTI-ICE, KEIL, PRIMECELL, RELVIEW, THUMB, µvision of RM Limited, UK. UTOSR is licensed by UTOSR development partnership. Bluetooth of Bluetooth SIG Inc. CT-iq of DECT Forum. COLOSSUS, FirstGPS of Trimble Navigation Ltd. EMV of EMVCo, LLC (Visa Holdings Inc.). EPCOS of Epcos G. FLEXGO of Microsoft Corporation. FlexRay is licensed by FlexRay Consortium. HYPERTERMINL of Hilgraeve Incorporated. IEC of Commission Electrotechnique Internationale. IrD of Infrared Data ssociation Corporation. ISO of INTERNTIONL ORGNIZTION FOR STNDRDIZTION. MTLB of MathWorks, Inc. MXIM of Maxim Integrated Products, Inc. MICROTEC, NUCLEUS of Mentor Graphics Corporation. MIPI of MIPI lliance, Inc. MIPS of MIPS Technologies, Inc., US. murata of MURT MNUFCTURING CO., MICROWVE OFFICE (MWO) of pplied Wave Research Inc., OmniVision of OmniVision Technologies, Inc. Openwave Openwave Systems Inc. RED HT Red Hat, Inc. RFMD RF Micro Devices, Inc. SIRIUS of Sirius Satellite Radio Inc. SOLRIS of Sun Microsystems, Inc. SPNSION of Spansion LLC Ltd. Symbian of Symbian Software Limited. TIYO YUDEN of Taiyo Yuden Co. TEKLITE of CEV, Inc. TEKTRONIX of Tektronix Inc. TOKO of TOKO KBUSHIKI KISH T. UNIX of X/Open Company Limited. VERILOG, PLLDIUM of Cadence Design Systems, Inc. VLYNQ of Texas Instruments Incorporated. VXWORKS, WIND RIVER of WIND RIVER SYSTEMS, INC. ZETEX of Diodes Zetex Limited. Last update -- V3., 7-3-9

16 Published by Infineon Technologies G

Datasheet / FS660R08A6P2FLB

Datasheet / FS660R08A6P2FLB HybridPCK DriveModule FinalDataSheet V3.,9-5- utomotivehighpower HybridPCK Drive Module Features / Description HybridPCK Drive module with EDT IGBT and Diode T T T VCES = 75 V IC = Typical pplications