ALD 테크닉에 의한 Al2O3와 TiN박막의 형성

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18 B+B B E 2 D Energy Molecular state B 2 Dissociated state Distance from the surface 11

19 Deposition Rate 1 Monolayer Saturation Point Source Pulse Time Thickness Cycle Number 12

20 Deposition Rate 1 Monolayer Process Window Temperature 13

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33 Gas flow mechanism Laminar flow Shower-Head Injector A,Ar,B A,Ar,B Structure A,Ar,B Advantages 1. High Material utilization efficiency. 2. Minimization of reaction volume. 1. Uniform source flux offered 1. Simplified structure offers easier purge and easy maintenance. 2. No source depletion over large area substrate. Dis - advantages 1. Thickness non-uniformity due to source depletion at inlet area makes it unsuitable for large area deposition. 2. Complex reactor structure 1. Relatively large purging time due to large reaction volume and low conductance of showerhead holes make it difficult to realize pure ALD system. 1. Minimization of reaction volume is needed for better material utilization efficiency. [A,B = Reactants. Ar = Argon (inert gas for purging)] 26

34 TMA Purge-Ar O 3 Purge-Ar on on on on on on 1 Cycle 27

35 Parameter Condition Source Oxidant O 3 : ozone Purging Gas Ar Process pressure 400~600 mtorr Substrate Si(100) Process temperature

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37 Thickness(A ) Number of cycles 30

38 200 Thickness (A ) Uniformity (%) TMA step time (sec) 31

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40 Uniformity (%) Thickness (A ) (b) (a) (b) (a) Oxidant step time (sec) 33

41 Growth rate (A / cycle) (a) (b) Growth Temperature ( o C) 34

42 Si 80 Atomic Concentration(%) O Al C Sputter Time(min.) 35

43 Normalized yield O He + Al 15 o Al 2 O 3 Si Channel 36

44 Al 2p H 2 O Al 2p O 3 Intensity (a. u.) (a) (b) O 1s H 2 O O 1s - O 3 Intensity (a. u.) (c) (d) Binding energy (ev) 37

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46 Al 2 O 3 Poly Si 39

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53 1 cycle TiCl 4 Ar NH 3 A B Substrate B A B A 1cycle Ar Time 46

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55 Deposition Rate (Å/min) Temperature ( o C) 48

56 Resistivity (µω) Temperature ( o C) 49

57 Thickness(nm) Cycle Number 50

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60 Atomic concentration(%) N C Cl O Ti Si O Sputter time(min) 53

61 60 N 50 O Si Atomic Concentration (%) Cl : 1.23% Cl Ti Sputtering Time (min.) 60 N Atomic Concentration (%) Cl : 0.38% O Si Cl Ti Sputtering Time (min.) 54

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69 감사의글 갑신년한해가밝았습니다. 올해는제게뜻깊은한해가될것같습니다. 10년동안의학생신분에서사회인신분으로, 20대에서 30대로, 제자신의미래를진지하게생각해볼때인것같습니다. 처음청운의꿈을안고대학원에들어와이제 2년여동안의대학원생활을마치려합니다. 뒤돌아보면아쉬운점이많이남습니다. 제가대학원에들어올수있었던것은행운이었습니다. 여러사람들과만나제자신을돌아볼수있었고많은경험과함께좀더성숙할수있었던기회였습니다. 우선, 언제나한결같은웃음으로작은일에도칭찬을아끼시지않으셨던이종무교수님께진심으로감사드립니다. 그리고연구실에서같이생활했던많은선후배분들과친구들이저에게는많은도움이되었습니다. 우리연구실에기둥이자분위기메이커였던종민형, 처음대학원에들어올때부터동거동락한착한마음을가진덕렬과멋지고똑똑한태종에게고마움을전하고싶습니다. 그리고우리가졸업한후에도연구실의리더로써잘이끌승모, 항상동병상련의아픔을같이했던 5북라인퀸가현아, 연구실의브레인경철에게도고마움을전합니다. 많은생활은하지않았지만옆자리에서묵묵히열심히일하는대규, 항상걱정스러운대교, 믿음직스러운연구실의막내충모와연규, 다른연구실이지만한가족같이지냈던남호그리고졸업한선배들, 제가대학원에서일하는데많은도움을준진중형, 우리 leg의맏형재범형, 취업에많은도움을주고제가믿고따르는광표형, 똑똑한균석, 벌써결혼해서유부남이된한승, 광식또한대학원생활동안많은도움을줬던친구들원휘, 정열, 문갑, 우정, 기홍에게고맙다는말을전하고싶습니다. 생각하면할수록감사할분들이너무나많은것같습니다. 마지막으로지금의제가있기까지부모님과누나에게이논문을바칩니다. 저에게아낌없는격려와지원을해주신 2004 년홍현석 62

슬라이드 1

슬라이드 1 APR1400 KNF/ / 2008. 4. 11 13 Table of Contents 1. APR1400 LBLOCA (Now vs. Before) 2. 3. 4. 13 2 1. APR1400 LBLOCA (Now vs. Before) Now Before 13 3 1. APR1400 LBLOCA (Now vs. Before) PCT Before Now SIT