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1 F eedb a ck V H F 100W a t t T h e Design of VHF Br oadb an d 100W at t P ow er Am plifier s By F eedb ack Cir cuit 2001

2 F eedb a ck V H F 100W a t t T h e Design of VHF Br oadb an d 100W at t P ow er Am plifier s By F eedb ack Cir cuit

4 ,. 99,,,.,,,..,,,,,,,,,,,,,,,,,,,,,,.,,.,,.

5 Abstract A. Balun 2 1. balun (transmissin line transformer balun ) 4 1) 1:1 balun 5 2) 1:4 balun 7 3) 1:9 balun balun 11 1) 1:1 balun 11 2) 1:4 balun 13 3) 1:9 balun 13 B. (feedback ) ) 15 2) 16 3) 16 4) FET BJT 22 1) FET 22 - i -

6 2) BJT A. 25 B. Balun T ransformer 27 1) Balun 27 2) 1:1 balun 29 3) 1:4 balun 33 C. feedback simulation 38 D ii -

7 1. wire- w ound balun 2 2. balun Ruthroff 1:1 Balun 5 5. Ruthroff 1:1 BalunLow - frequency model 6 6. Guanella 1:1 BalunLow - frequency model 6 7. Ruthroff 1:4 Balun High - frequency model 7 8. Guanella 1:4 Balun High- frequency model :4 BalunLow - frequency model Guanella 1:9 Balun High- Frequency model Guanella 1:9 Balun Low - frequency model (a) Balun (b) Balun :4 Balun :9 Balun GaAs FET BJT (a) BJT (b ) GaAs FET (a) GaA s FET model (b ) BJT model Block 26 - iii -

8 24. Balun Balun port Core1:1 Balun Core1:1 Balun :1 Balun port :1 Balun balanced port :1 Balun balaced port :1 Balun balanced port :4 simulation :4 simulation :4 back - to- back :4 Balun port :4 Balun balanced port :4 Balun balanced port :4 Balun balannced port Scalar Network Analyzer D1008UK simulation simulation simulation ( ) iv -

9 v -

10 Ab str act In this thesis, a broadband high pow er amplifier which operates ov er 20MHz 300MHz is designed and manufactured. Matching netw orks ar e m ade of coaxial balun transformer s which hav e good broadband fr equency char act eristics, low los s and low phase unbalance. And feedback cir cuit s ar e u sed to improv e a br oadband gain flatness. T his amplifier has the pow er gain of 50dB and gain flatness below 1.5dB ov er it s operating fr equency band. W hen 0dBm pow er is applied, the output pow er is more than 50dBm. Also, it has 35% pow er efficiency ov er the design band. - vi -

11 20MHz 300MHz. balun transformer., (feedback )., 20MHz 300MHz 50dB, 1.5dB., 0dBm, 50dBm., 35%. - vii -

12 . VHF, UHF T V,,.. balun. 20MHz 300MHzmulti- octave band, reactance., balun (transformer ).,

13 . [1] [2 ] [3 ] [4 ] [5 ] A. Balun Balunbalanced- to- unbalanced unbalanced- to- balanced, reference unbalanced balanced. balun,,.,, push - pull., balun. balun. 1. wire- wound balun 1. winding 2-2 -

14 winding DC isolation, flux linkage interwinding capacitance. 2. balun balun2 balun

15 1. balun (transmissin line transformer balun) balunwindingwinding, flux conventional currentcoil choking action. choking reactance ferrite core. conventional current, balun,. balun. conventional currentcoil reactance coil reactance. Ruthroff Guanella, balun., balanced port Guanella balun, Ruthroff balunport balanced port. 3. R L. ) 4, ) 5 balun, ) 2, ) 3 2 boot - strap

16 3. 1) 1:1 balun 4. Ruthroff 1:1 Balun Ruthroff baluntoroidal rod. 4 toroidal 1:1 balun. + V 1 / 2., 2 ( + V 1/ 2 - V 2 ) (R L = Z o ), V 2 = V 1, 2 - V 1 /

17 balanced.. Ruthroff, Guanella 1:1 balun., Ruthroff negative effect., core flux. coiling 1:1 balun R L Ruthroff 1:1 Balun Low - frequency m odel 6. Guanella 1:1 Balun Low - frequency m odel 41:1 balun. choking,,. Z in = Z o Z L + jz o tan l Z o + jz L tan l (1) - 6 -

18 , Z o =, Z L = l = = 2 / ( effective wavelength), Z o = Z L,, l. 2) 1:4 balun 1:4 balun1:1 balun. 1:1 balun 1:4 balun. ) Ruthroff balun, ) Guanella balun. 1:1 balun, R L floating". 7. Ruthroff 1:4 Balun High- frequency model Ruthroff balun, 3-7 -

19 R L + V 1, R L - V 1., V out = 2 V 1, 1:4. 8. Guanella 1:4 Balun High- frequency model, Guanella balun, V 1. balunfloating. 1) Ruthroff balun. balanced., Guanella balun., balanced load. 2) Ruthroff balun, Guanella balun Guanella balun coiling. ( R L / 2 = Z o ),, - 8 -

20 Guanella balun. (a) 9. 1:4 BalunLow - frequency model (a) Ruthroff model (b ) Gualnella m odel - 9 -

21 3) 1:9 balun 10Guanella 1:9 balun. Z o = R L / 3, V Guanella 1:9 Balun High- Frequency model 11. Guanella 1:9 Balun Low - frequency model

22 Guanella balun - 1:9, 1:16 balun. 2. balun 1) 1:1 balun wire- wound balun core balun. (a) (b) 12. (a) Balun (b)

23 12 unbalanced, floating balanced. charge conservation line, / 2., = 90 o,., Z A 2 = 2 R 50 (2) 12(b ). field, field field Z B. 13. Balun 13balun. balunbandwidth ( VSW R ), 50/ 2R line Bline C

24 2) 1:4 balun 14. 1:4 Balun Z in = V i I i = 2v o I o / 2 = 4 ( V o I o ) = 4R L, ( wher e, Z o = 2R L ) (3) 3) 1:9 balun 15. 1:9 Balun Z in = V i = 3 V o I i I o / 3 = 9R L ( wher e, Z o = R L 9R L = 3R L ) (4)

25 [6 ] [7 ] [8 ] [9 ] B. (feedback) (negative feedback) VSWR,..,.,., (2- decade ). 16. GaAs FET BJT

26 [10 ] [1 1] [12 ] [13 ] [14 ] [15 ] [16 ] 1. 1),,, BJT FET. (sensitivity ). A f = A 1 + A (5), A da f A f = Af da A (6) 1/ 1 + A. (desensitivity factor) D. D 1 + A (7) D. A f A D. A f = A / D (8) A 1 A f = A 1 + A A A = 1 (9)

27 . 2) ( L C),... 3). (nonlinear distortion ).. 2harmonic. 2harmonic B 2, 2harmonic B 2f B 2f B 2. - B 2f - A B 2f. 2harmonic B 2 - A B 2f. B 2 - A B 2f = B 2f (10) B 2f = B A = B 2 D (11)

28 A 2harmonic. 4) 1/ D. D1., 1 + A

29 2. [9 ] V be, v in,. i e v in R E (12) i c v in R E (13) 1 R E i c v in (14).,

30 v out = - i c R c (15),. A v = v out v in - R C R E (16) , v in = i b r be + ( i b + i b )R E = i b ( r be + ( 1 + )R E ) (17), r in = v in i b = r be + ( 1 + ) R E (18).,. RF,. ballast

31 3. [9 ] R F B. R in = 0,, i in v out = - i in R F B (19)

32 transresistance r T = v out v in = - R F B (20) A i = i out i in = - R F B R C (21), r in r in = R C + R F B 1 + R F B + ( 1 + )R C r be (22)

33 [8 ] [10 ] [1 1] 4. FET BJT GaAs FET BJT.. 1) FET 21. (a) BJT (b) GaAs FET 22. (a) GaA s FET model (b ) BJT model FET matrix. i [ 1 = 2 i ] g m 1 + g m R 1-1 R R 2 1 R 2 v [ 1 v 2 ] R 2 (23)

34 BJT matrix r be + R 1 R 2. Y- parameters - parameter S 11 = S 22 = 1 D [ 1 - g m Z o 2 R 2 ( 1 + g m R 1) ] S 21 = 1 D ( - 2g m Z o 1 + g m R 1 + 2Z o R 2 ) (24) (25) S 12 = 2Z o DR 2 (26) D = 1 + 2Z o R 2 + g m Z o 2 R 2 ( 1 + g m R 1 ) (28) (24)(28)(, VSWR=1), S 11 = S 22 = g m R 1 = g m Z o 2 R 2 (29) R 1 = Z o 2 R 2-1 g m (30) (25)(36) S 21 = Z o - R 2 Z o (31) S 12 = Z o R 2 + Z o (32) S 21 parameter, R 2.,. R 1 R 2. R

35 , ( Z o 2 / R 2 ) 1/ g m transconductance g m( min ), g m( min ) = R 2 Z o 2 (33), g m( m in ) g m. g m R 1 R 2 Z O 2, VSW R. 2) BJT matrix v [ 1 = v 2 ] r be i [ 1 2 i ] 1 + r be g m r be + R 1 + g m r 1 be 1 + g m r be g m r be ( R 1 - R 2 ) + r be + R 1 R 1 + R 2 + r be + g m r be R e 1 + g m r be (34), g m r be 1 g m, S - parameter, [ S] = R 1 R 2 - Z o 2 2R 1 Z o + R 1 R 2 + Z o 2 2(R 1 - R 2 )Z o 2R 1 Z o 2 + R 1 R 2 + Z o 2 2R 1 Z o 2R 1 Z o + R 1 R 2 + Z o 2 R 1 R 2 - Z o 2 2R 1 Z o + R 1 R 2 + Z o 2 (35) R 1 R 2 = Z o 2, S 11 = S 22 =

36 . VHF..,, balun. A W att min. 2 20~300MHz 3 class Class AB 4 RF 0dBm typical 5 DC 28VDC 6 Efficiency 40% typical(t BC) 7 RF VSWR 1.5:1 max 8 Load VSW R 2: dB 1. RF 0dBm 100W 50dB W, Seme Lab 40WMOSFET D1008UK. Seme Lab

37 150WMOSFET D1020UK. MOSFET push- pull Block

38 B. Balun T ransformer 20MHz 300MHzbalun,. 50, 1:1 balun, 1:4, 1:9., ferrite core. ferrite balun 30MHz, balun. 1) Balun Balunbalanced port port 180 o., balanced port. 50, balanced port 1:1 balun 25, 1:4 balun Balun

39 241:1 balun. balanced port25 / 4 microstrip, 50 balanced port Balun port, / 4, ( 25),,, balun. balun

40 2) 1:1 balun 50 1:1 balun.,, floating balun. ferrite ferrite, / 4., 300MHz., ring ferrite core. 26. Core1:1 balun 26ferrite core. 30MHz. ferrite core,. 27Core

41 27. Core1:1 Balun 28. 1:1 Balun port

42 11.5dB, 8.2dB 1:1 balunbalanced port3.3db :1 Balun Balanced port balanced port0.5db. Balun,. balanced port 180 o port. 180 o, 400MHz 177 o

43 30. 1:1 Balun balanced port 31. 1:1 Balun balanced port

44 3) 1:4 balun 1: :4.. 25, 50, :4. simulation :4 simulation

45 33. 1:4 simulation :4 back - to- back 341:4 back - to- back

46 35. 1:4 Balun port 36. 1:4 Balun balanced port

47 35 361:4 balunbalanced port. 14dB,, :4 Balun balanced port 38. 1:4 Balun balanced port

48 balanced port 180 o. scalar netw ork analyzer. 39. Scalar Network Analyzer 503, 1:9 balun

49 C. feedback simulation D1008UK40W push - pull. D1008UK, simulation,. parameter, simulation. 40. D1008UK dB. DC.,. DC, 300MHz

50 41. simulation 42. simulation, balun. simulation 8, 25, 1:4balun 1:1 balun

51 43. simulation 43. D1020UK150W, 40WD1008UK, push - pull..,. balun1:91:

52 D. Motorola CA 1081CSeme Lab D1008UK, Semel Lab D1020UK dB,. S 21. Motorola MMIC CA 1801C,. 45., 0dBm. 20MHz 300MHz 50dB

53 1.5dB., 35%. 45. ( ) Watt 2 20~300MHz 3 Efficiency 35% 4 RF - 30dB 5 1.5dB

55 . 20MHz 300MHz balun, 0.5dB, 20dB. push- pull MOSFET, 100W., 0dBm, 50dB, 1.5dB, VSWR 1.5:1, 35. balun. Balun, 50.,,

56 [1] Jerry Sevick, T ransm iss ion L ine T ransform ers, Am erican Radio Relay League, 2nd Edition [2] Peter Vizmuller, R F D es ig n Guide- Sys tems, Cir cuits, and E qua tions, Artec Hou se, 1995 [3] R.E.Collin, F ounda tions for M icr owave E ng in eering, M c- Graw Hill, inc., [4] Motorola Semiconductor Application Note AN 1034, " T hr ee Balun Designs for Push- Pull Amplifier s", [5] J. Helszajn, Synthes is of L ump ed E lem ent, D is tributed and P lana r F ilters, pp , McGraw - Hill, [6] W. K. Chen, P ass ive and A ctive F ilters, John Wiley & Sons, Inc., [7] G.M atthaei, L.Youn g, E.M.T.Jones, M icrowa ve F ilters, I mp edance - M a tching N etworks and Coup ling S tructures, Artech Hou se, [8] G. Gonzalez, M icrowave Trans is tor Amp lifiers : Analys is and D esig n, 2nd edition, Pr entice Hall, pp , 1997 [9] Peter B. Kenington, H ig h- Linearity RF Amp lifier D es ign, Artech Hou se Publisher s, [10] U. Karacaoglu, I. D. Robert son, " MMIC Activ e Bandpass Filter Using Negative Resistance Element s", in 1995 IEE E M TT - S Int. M icrowave Symp. D ig., pp ,, Jun., 1995 [11] W. Schwab and W. Menzel, "A Low - Noise Active Bandpass Filter",

57 I E E E M icrowave and Guided wave L etters, vol. 3, N o. 1, pp.1-2, Jan., 1993 [12] S. E. Sussman- Fort, "Design Concepts for Microwave GaAs FET Active Filters", IE E E Trans. M icrowave Theory Tech., vol. M TT -37, N o.9, pp , Sep [13] F. Sabouri- S, " A GaA s MMIC Activ e Filter w ith Low Noise and High Gain", in 1998 IEE E M TT - S Int. M icrowave Symp. D ig., pp , Baltimore, Jun., 1998 [14] C. Rau scher, " Microw ave A ctive Filter s Based on T r an sv er sal and Recur siv e Principles", I E E E T rans. M icr owave Theory T ech., vol. M TT -33, N o.12, pp , Dec [15] M. J. Schindler, Y. T ajima, " A Nov el MMIC A ctive Filter with Lumped and T ransversal Elements", IE E E Trans. M icrowave Theory Tech., vol. M TT - 37, N o.12, pp , Dec [16], Double Feedback LoopRF,,

Dual- Gate FET T he Analysis and Applications of Nonlinear Characteris tics of Dual- Gate FET 1999 12

Dual- Gate FET T he A naly s is and A pplication of Nonlinear Characteris tics of Dual- Gate FET 199 9 Dual- Gate FET T he Analysis and Applications of Nonlinear Characteris tics of Dual- Gate FET 1999