THE JOURNAL OF KOREAN INSTITUTE OF ELECTROMAGNETIC ENGINEERING AND SCIENCE. vol. 26, no. 9, Sep GHz 10 W Doherty. [4]. Doherty. Doherty, C

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1 THE JOURNAL OF KOREAN INSTITUTE OF ELECTROMAGNETIC ENGINEERING AND SCIENCE Sep.; 26(9), ISSN (Print) ISSN X (Online) GaN-HEMT Doherty High-Efficiency GaN-HEMT Doherty Power Amplifier with Compact Harmonic Control Networks 김윤재 김민석 강현욱 조수호 배종석 이휘섭 양영구 Yoonjae Kim Minseok Kim Hyunuk Kang Sooho Cho Jongseok Bae Hwiseob Lee Youngoo Yang 요약 long term evolution(lte) 2.6 GHz Doherty Doherty GaN-HEMT, 10 MHz 6.5 db (PAPR) LTE downlink dbm 13.1 db, 57.6 % (PAE) 25.7 dbc (ACLR). Abstract This paper presents a Doherty power amplifier(dpa) operating in the 2.6 GHz band for long term evolution(lte) systems. In order to achieve high efficiency, second and third harmonic impedances are controlled using a compact output matching network. The DPA was implemented using a gallium nitride high electron mobility transistor(gan-hemt) that has many advantages, such as high power density and high efficiency. The implemented DPA was measured using an LTE downlink signal with a 10 MHz bandwidth and 6.5 db PAPR. The implemented DPA exhibited a gain of 13.1 db, a power-added efficiency(pae) of 57.6 %, and an ACLR of 25.7 dbc at an average output power of 33.4 dbm. Key words: Doherty Power Amplifier, Harmonic Impedance Control, GaN-HEMT, LTE. 서론., PAPR., [1] [3].. Doherty, 2014( ) (2014R1A5A ). (College of Information and Communication Engineering, Sungkyunkwan University) Manuscript received July 3, 2015 ; Revised September 21, 2015 ; Accepted September 22, (ID No S) Corresponding Author: Youngoo Yang ( yang09@skku.edu) c Copyright The Korean Institute of Electromagnetic Engineering and Science. All Rights Reserved. 783

2 THE JOURNAL OF KOREAN INSTITUTE OF ELECTROMAGNETIC ENGINEERING AND SCIENCE. vol. 26, no. 9, Sep GHz 10 W Doherty. [4]. Doherty. Doherty, CW. Doherty... Doherty 전력증폭기의동작원리 Doherty back-off. 1 Doherty. Z 1T Z 2T λ/4. Z 1T Doherty.. 그림 2. DPA Fig. 2. Ideal efficiency curve of the DPA. 2 Doherty B. B 6 db back- off. PAPR.. 설계및시뮬레이션 Advanced Design System(ADS) harmonic source- load-pull. Cree 6 W GaN-HEMT CGH40006P. Harmonic source- load-pull ADS. harmonic source- load-pull 표 1. source load Table 1. Extracted optimum source and load impedance. 그림 1. DPA Fig. 1. Output combiner of conventional DPA. Source Load j*0 Ω j*50 Ω - 26+j*26 Ω j*200 Ω 0 Ω 784

3 GaN-HEMT Doherty 그림 3. Fig. 3. Performance comparison between without and with harmonic control.,, 2 3, 1. Load 2 3, source 3. 3 source- load-pull. 11 %. 4 DPA, bias. 2 short stub 2 short real, 그림 4. Fig. 4. Schematic diagram of the designed input and output matching network. (a) (a) Source (b) (b) Load 그림 5. Fig. 5. Matched fundamental and harmonic impedance. source- load-pull imaginary. Load, 3 open stub short real, load-pull imaginary., source-pull transmission line open-stub 50 Ω, load-pull transmission line open-stub 50 Ω. 5 source load Smith.. 6 Doherty. 90, 90. λ/ ma AB, 28 V., 6.5 V C 785

THE JOURNAL OF KOREAN INSTITUTE OF ELECTROMAGNETIC ENGINEERING AND SCIENCE. vol. 26, no. 9, Sep. 2015. Z1 T = ROÐ90 RO Z 2T = Ð90 2 0 0 GS DS 1T GS DS 2T 그림 6.

4 THE JOURNAL OF KOREAN INSTITUTE OF ELECTROMAGNETIC ENGINEERING AND SCIENCE. vol. 26, no. 9, Sep Z1 T = ROÐ90 RO Z 2T = Ð GS DS 1T GS DS 2T 그림 6. Doherty Fig. 6. Overall schematic diagram of the designed DPA. 그림 8. PAE Fig. 8. Simulated gain and PAE of proposed DPA. 그림 7. PAE Fig. 7. Simulated gain and PAE by load impedance modulation.. 7 PAE., PAE 2.5 db. 8 Doherty dbm, 15.8 db. PAE 74.7 %, 6 db back-off 76.8 %.. 제작및측정 그림 9. Doherty Fig. 9. Photograph of the implemented DPA. Doherty mm RF35 PCB, mm 2. Doherty LTE LTE downlink 10 MHz, 6.5 db PAPR db, 33.4 dbm 57.6 % PAE., 33.4 dbm ACLR 25.7 dbc. digital pre-distortion(dpd). 786

5 GaN-HEMT Doherty.. 결론 그림 10. DPA PAE Fig. 10. Measured gain and PAE of the implemented DPA. 그림 11. DPA ACLR Fig. 11. Measured ACLR of the implemented DPA. Doherty GHz Doherty.. Doherty LTE 13.1 db, 33.4 dbm 57.6 % PAE 25.7 dbc ACLR. References [1] S. C. Cripps, RF Power Amplifiers for Wireless Communications. Norwood, MA: Artech House, [2] M. Seo, M. Song, J. Gu, H. Kim, J. Ham, C. Park, and Y. Yang, "Three-stage Doherty amplifier with uneven input splitter", Microw. and Opt. Tech. Lett., vol. 55, no. 6, pp , Jun [3] M. Seo, H. Lee, J. Gu, and Y. Yang, "Doherty power amplifier using a compact load network for bandwidth extension", in Asia-Pacific Microw. Conf., Nov. 2013, pp [4],,,,,, "2.14- GHz class-f ",, 18(8), pp , [5] A. Markos, P. Colantonio, F. Giannini, R. Giofre, M. Imbimbo, and G. Kompa, "A 6 W uneven Doherty power 표 2. Table 2. Performance comparison with previous works. Ref. (GHz) (dbm) (dbm) (db) PAE (@ ) (%) Drain efficiency (@ ) (%) (V) [5] CW [6] WiMAX [7] WiMAX This work LTE 787

THE JOURNAL OF KOREAN INSTITUTE OF ELECTROMAGNETIC ENGINEERING AND SCIENCE. vol. 26, no. 9, Sep. 2015.

crow. Conf., pp. 299-302, Oct. 2007. [6] R. Darraji, F. M.

, vol. 59, no. 11, pp. 2898-2909, Nov. 2011. [7] J. Kim, J. Son, J. Moon, and B.

: ) 2014 3 [주 관심분야] RF Power Amplifier IC Design [주 관심분야] RF Power Amplifier IC Design 년 2월: 성균관대학교 전자전기공학 부 (공학사) 2015년

6 THE JOURNAL OF KOREAN INSTITUTE OF ELECTROMAGNETIC ENGINEERING AND SCIENCE. vol. 26, no. 9, Sep amplifier in GaN technology", in Proc. 37th Eur. Microw. Conf., pp , Oct [6] R. Darraji, F. M. Ghannouchi, "Digital Doherty amplifier with enhanced efficiency and extended range", IEEE Trans. Microw. Theory Tech., vol. 59, no. 11, pp , Nov [7] J. Kim, J. Son, J. Moon, and B. Kim, "A saturated Doherty power amplifier based on saturated amplifier", IEEE Microw. Wireless Compon. Lett., vol. 20, no. 2, pp , Feb 김윤 재 조수 호 김민 석 강현 욱 년 2월: 건국대학교 전자공학과 (공 학사) 2015년 3월 현재: 성균관대학교 전자전 년 월 건국대학교 전자공학과 (공학 사 년 월 현재: 성균관대학교 전자전 : ) [주 관심분야] RF Power Amplifier IC Design [주 관심분야] RF Power Amplifier IC Design 년 2월: 성균관대학교 전자전기공학 부 (공학사) 2015년 3월 현재: 성균관대학교 IT융합 학과 석사과정 배종 석 년 월 충남대학교 전자공학과 (공학 사 년 월 현재: 성균관대학교 전자전 : ) [주 관심분야] RF Power Amplifier Design [주 관심분야] RF Power Amplifier IC Design 년 2월: 목포해양대학교 전자공학과 공학사) 년 3월 현재: 성균관대학교 전자전 2014 ( 2014 [주 관심분야] RF Power Amplifier Design 이휘 섭 년 2월: 한양대학교 전자 및 통신공학 과 (공학사) 2014년 2월: 성균관대학교 전자전기컴퓨 터공학과 (공학석사) 2014년 3월 현재: 성균관대학교 전자전 기컴퓨터공학과 박사과정 2012 [주 관심분야] RF Power Amplifier Design 788

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Small-Cell 2.6 GHz Doherty 표 1. Silicon LDMOS FET Table 1. Comparison of silicon LDMOS FET and GaN- HEMT. Silicon LDMOS FET Bandgap 1.1 ev 3.4 ev 75 V

Small-Cell 2.6 GHz Doherty 표 1. Silicon LDMOS FET Table 1. Comparison of silicon LDMOS FET and GaN- HEMT. Silicon LDMOS FET Bandgap 1.1 ev 3.4 ev 75 V THE JOURNAL OF KOREAN INSTITUTE OF ELECTROMAGNETIC ENGINEERING AND SCIENCE. 2016 Feb.; 27(2), 108 114. http://dx.doi.org/10.5515/kjkiees.2016.27.2.108 ISSN 1226-3133 (Print) ISSN 2288-226X (Online) Small-Cell