6 10 GHz InGaAs 0.15 μm 27 dbm GHz,, DAADetection And Avoid,. UWB. UWB 41.3 dbm/ MHz.,,, PRFPulse Repetition Frequency., UWB IC. UWB PA [1]

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1 THE JOURNAL OF KOREAN INSTITUTE OF ELECTROMAGNETIC ENGINEERING AND SCIENCE Oct.; 2910, ISSN Print ISSN X Online 6 10 GHz InGaAs 0.15 μm 27 dbm Wide-Band 6 10 GHz InGaAs 0.15 μm 27 dbm Power Amplifier 안현준 심상훈 박명철 김승민 박복주 어윤성 Hyun-Jun Ahn Sang-Hoon Sim* Myung-Cheol Park* Seung-Min Kim Bok-Ju Park* Yun-Seong Eo 요약 InGaAs enhancement mode 0.15 μm 6 10 GHz wide-band. Enhancement gate,., 3D-EMelectromagnetic. lossy matching,, GHz 20 db, 8 db, 27 dbm, 35 %. Abstract A 6 10 GHz wide-band power amplifier was designed using an InGaAs enhancement-modee-mode 0.15 μm pseudomorphic high-electron-mobility transistor. The positive gate bias of the E-mode device removes the need for complex negative voltage generation circuits, therefore reducing the module size. The wire bond and substrate loss parameters were modeled and extracted using a three-dimensional electromagnetic3d EM simulation. For wideband characteristics, lossy matching was adopted and the gate bias was optimized for maximum power and efficiency. The measured gain, in/output return loss, output power, and power-added efficiency were greater than 20 db, 8 db, 27 dbm, and 35 %, respectively, in the 6 10 GHz band. Key words: GaAs E-Mode, Wide-Band, Power Amplifer, Lossy Matching, EM-Simulation. 서론 UWB,,. low band GHz high band GHz. RF, 3 4 GHz 5G, Wi-Fi, 2017 Giga KOREA No.GK17N0100, 5G. Department of Electronics Engineering, Kwangwoon University * RFcore Inc. Manuscript received May 28, 2018 ; Revised July 10, 2018 ; Accepted September 28, ID No Corresponding Author: Yun-Seong Eo yseo71@kw.ac.kr 766 c Copyright The Korean Institute of Electromagnetic Engineering and Science. All Rights Reserved.

2 6 10 GHz InGaAs 0.15 μm 27 dbm GHz,, DAADetection And Avoid,. UWB. UWB 41.3 dbm/ MHz.,,, PRFPulse Repetition Frequency., UWB IC. UWB PA [1] [3]. InGaAs 27 dbm, PA MMIC, 3D-EM loss. lossy matching,. UWB off, Enable on-off., GHz InGaAs MMIC. Kesyght ADS load-pull source-pull.. M μm, 27 dbm M μm 2. VG 0.4 V VD 4 V class AB., lossy matching. [5]. lossy matching 1., [6], 93 Ω 1.2 pf GHz.. Wide-Band 전력증폭기설계 2-1 GaAs 전력증폭기 MMIC 설계 PDKProcess Design Kit Win semiconductor 0.15 μm InGaAs enhancement mode. Enhancement mode device 그림 1. Wide-band Fig. 1. Schematic of wide-band power amplifier. 767

3 THE JOURNAL OF KOREAN INSTITUTE OF ELECTROMAGNETIC ENGINEERING AND SCIENCE. vol. 29, no. 10, Oct [7]. odd mode. Odd mode [8]. Enable pin on-off UWB on-off. 2.5D Momentum. 2-2 전력증폭기패키지분석 QFNQuad Flat No leads PCB HFSS EM. 24-pin 4 4 mm 2 QFN. 10 CER GaAs QFN die-paddle, QFN Taconic CER a 3b., [9]., GaAs backside via GND. 2, [10]. QFN. double-bonding. double-bonding. 4. S-parameter 6 10 GHz MMIC, a 그림 3. Fig. 3. The illustration of multi-bondwire on ground pads. b 그림 2. QFN Fig. 2. Cross-sectional view of QFN package. 그림 4. Fig. 4. Measurement PKG and substrate simulation results. 768

4 6 10 GHz InGaAs 0.15 μm 27 dbm 27 dbm, 20 db.. 제작및측정 Win Semiconductors 0.15 μm GaAs, 5a MMIC 1.9 mm 1.45 mm. 5b. V DD 4V I DQ =56 ma, I DQ =147 ma. 6 S GHz 20 db, 8 db. S 11 S 22,,. 7,. 8 GHz 21.3 db 27.5 dbm 42.5 %. 8 a 그림 6. S- Fig. 6. Simulated and measured S-parameter. b 그림 5. a GaAs, b Fig. 5. Photograph of a GaAs PA MMIC, b Test module. 그림 8 GHz Fig. 7. Power gain, output power and 8 GHz. 769

5 THE JOURNAL OF KOREAN INSTITUTE OF ELECTROMAGNETIC ENGINEERING AND SCIENCE. vol. 29, no. 10, Oct 결론 그림 GHz Fig. 8. Power characteristics of the 6 10 GHz band.., 6 10 GHz 27 dbm, 35 %. 1. 3D-EM 20 db,, UWB,, 표 1. Table 1. PA performance comparison with previous works. Specifications Ref. [1] Ref. [2] Ref. [3] Ref. [4] This work FreqGHz V DD V GaindB S 11 db < 8 < 10 < 12 < 9 < 8 S 22 db < 10 < 10 < 10 - < 13 P sat dbm PAE% Areamm Process 0.25 μm GaAs GaAs 0.25 μm 3MI 0.15 μm GaAs 0.15 μm InGaAs 0.15 μm InGaAs enhancement mode Wide-band. Enhancement mode. 3D EM.. 20 db, 27 dbm, 35 %. References [1] E. Babakrpur, A. Medi, and W. Namgoong, "Wideband GaAs MMIC driver power amplifier for X and Ku bands," in 2017 Texas Symposium on Wireless and Microwave Circuits and SystemsWMCS, 2017, pp [2] Qorvo, "X band driver PA, TGA2700," Available: [3] Analog Devices, "GaAs MMIC 1 W power amplifier, 6 10 GHz, HMC590." Available: analog.com/media/en/technical-documentation/data-sheets/ hmc590chips.pdf. [4] X. Ding, L. Zhang, "A high-efficiency GaAs MMIC power amplifier for multi-standard system," IEEE Microwave and Wireless Component Letters, vol. 26, pp , Jan [5] A. Grebennikov, RF and Microwave Power Amplifier Design, 2nd ed. New-York, McGraw-Hill, 2015, pp [6] A. Yousefi, A. Medi, "Wide-band high-efficiency Ku- band power amplifier," IET Circuits, Devices & Systems, vol. 8, no. 6, pp ,

6 광대역 응용을 위한 6 10 GHz InGaAs 0.15 μm 27 dbm급 전력증폭기 [7] G. Nikandish, A. Medi, "A design procedure for highefficiency and compact-size 5 10-W MMIC power amplifiers in GaAs technology," IEEE Transaction on Microwave Theory and Techniques, vol. 61, no. 8, pp , Aug [8] O. Silva, I. Angelov, and H. Zirath, "Octave band linear MMIC amplifier with +40-dBm OIP3 for high-reliability space applications," IEEE Transactions on Microwave Theory and Techniques, vol. 64, no. 7, pp , Jul [9] Y. C. Lin, T. S. Horng, L. T. Hwang, C. T. Chiu, and C. P. Hung, "Low cost QFN package design for millimeter-wave applications," in 2012 IEEE 62nd Electronic Components and Technology Conference, San Diego, CA, 2012, pp [10] A. Chandrasekhar, S. Stoukatch, S. Brebels, J. Balachandran, E. Beyne, and W. De Raedt, et al., "Characterisation, modelling and design of bond-wire interconnects for chip-package co-design insertion lossdb," in 33rd European Microwave Conference Proceedings, Munich, 2003, vol. 1, pp 안 현 준 [광운대학교/석박통합과정] 박 명 철 [RFcore/선임연구원] 년 월 광운대학교 전자공학과 공학 사 년 월 현재: 광운대학교 전자공학 과 석박통합과정 [주 관심분야] GaAs MMIC 회로설계, CMOS RFIC 회로설계, 무선전력전송 시스템 : 심 상 훈 [RFcore/수석연구원] 년 2월: 한국과학기술원 전자공학과 공학사 년 2월: 한국과학기술원 전자공학과 공학석사 년 2월: 한국과학기술원 전자공학과 공학박사 년 1월 현재: RFcore 수석연구원 [주 관심분야] 능동위상배열시스템을 위한 MMICCMOS, GaN, GaAs, SOI 개발 년 월 광운대학교 전자공학과 공학 사 년 월 광운대학교 전자공학과 석박 통합과정 년 월 년 12월: 전자부품연구원 연구원 2017년 1월 현재: RFcore 선임연구원 [주 관심분야] 무선 통신 및 레이다 시스템을 위한 CMOS RF/ Analog 집적회로 설계 : : 김 승 민 [실리콘알엔디/연구원] 년 월 호남대학교 이동통신공학과 공학사 년 월 현재 실리콘알엔디 연구원 회로설계, GaN 회로설계 : : [주 관심분야] GaAs MMIC MMIC 771

7 THE JOURNAL OF KOREAN INSTITUTE OF ELECTROMAGNETIC ENGINEERING AND SCIENCE. vol. 29, no. 10, Oct [RFcore/ ] : : University of Massachusetts : : Skyworks Solution Inc. Senior Engineer : Digital Media & Communication R&D 2016 : RF [ 주관심분야 ] RFIC, MMICCMOS, SOI, GaN, GaAs [ / ] : : : : LG RF Team : Chip Solution Center : : [ 주관심분야 ] GaAs MMIC, CMOS RFIC,, UWB Radar IC 772