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측정클럽종합워크샵 2009. 5. 22 ( 금 ) 표면분석법을이용한태양전지분석 나노소재측정센터김경중

발표순서 태양전지현황 태양전지종류에따른표면분석응용 - 실리콘태양전지 ; 결정질, 비정질박막태양전지 - 화합물태양전지 ; CIGS, CdTe, GaAs 박막태양전지 - 유기물태양전지 ; 염료감응, 유기, 폴리머태양전지 - 나노태양전지 ; 나노선, 양자점태양전지 표면분석표준확립 - 소급체계확립 - 국제표준제정 (ISO/TC-201) - 인증표준물질보급 요약

태양전지현황

녹색산업을위한태양전지산업 년 40 % 무한한에너지원 : Si 기반, 인체무해이상의초고속성장사업 청정에너지원 : CO 2 및유해가스발생거의없음년 40 % 태양표면복사에너지 : 3.8 x 10 23 kw 지표면도달에너지 : 1.3 x 10 14 kw 연간전세계에너지소비의약 1 만배

태양전지구조및원리

태양전지의원리 (KIST 김경곤박사님자료 )

태양전지시장동향 Global : 년 40 % 이상초고속성장 국내 : 시장규모에비해열악한보급량

태양전지의분류별점유현황 - 현재 95% 정도가 Si 을기반으로한태양전지임 - 향후 3 세대태양전지의비율이크게증가할것임

태양전지연구개발분야 태양전지소재 태양전지모듈 태양전지소자 태양전지표준

태양전지산업의과제 : 고효율, 저비용

태양전지의종류 차세대태양전지 (3 rd Gen) : 저비용, 고효율, 신물질, 특수목적

나노및표면분석법의종류

태양전지공정측정 / 분석법개발및표준확립 측정 / 분석장비측정 / 분석요소기술태양전지종류 SIMS/TOF-SIMS XPS/AES EPMA(LEXES) HR-RBS/MEIS AFM/SEM/TEM SCM/EFM/KPM SE/PL/EL/NSOM XRR/Nanoindentor 주성분정량분석미량성분정량분석화학상태분석깊이분포분석박막두께측정표면형상측정결정구조및결함전기적특성평가광학적특성평가물리역학특성평가 Bulk Si ( 단결정 ) Bulk Si ( 다결정 ) Si 박막 ( 비정질 ) II-III-VI (CIGS) II-VI (CdTe, CdS) III-V (GaAs, InP) Dye-TiO 2 Organic, Polymer

태양전지종류에따른표면분석응용

태양전지종류에따른표면분석응용 실리콘태양전지 ; 결정질, 비정질박막태양전지 - 미량성분정량분석및깊이분포도 : SIMS - 다층박막두께측정 : SIMS 화합물태양전지 ; GaAs, CdTe, CIGS 박막태양전지 - 주성분정량분석 : XPS, AES, SIMS - 다층박막두께측정 : AES, SIMS 유기물태양전지 ; 염료감응, 유기태양전지 - 유기분자의밴드갭측정 : UPS - 나노구조체크기및표면조성 : AES 나노태양전지 ; 나노선, 양자점태양전지 - 크기및화학상태 : XPS, SPM, AES

실리콘태양전지 실리콘태양전지밸류체인 ( 한국화학연구원김희영박사님자료 )

실리콘태양전지 실리콘태양전지연구개발 태양전지원소재개발 단결정실리콘잉곳다결정실리콘웨이퍼 태양전지소자기술 단결정실리콘태양전지다결정실리콘태양전지비정질실리콘박막태양전지다중접합실리콘태양전지 실리콘태양전지 측정및분석기술 도핑원소정량분석불순물정량분석깊이분포도분석다층박막두께측정 태양전지측정표준 소급체계 : 도판트정량국제표준 : ISO/TC-201 인증표준물질개발

실리콘태양전지 실리콘태양전지원소재개발 한국화학연구원 : 김희영박사 동양제철화학 : Si 원소재개발실트론 : 단결정 Si 잉곳개발

실리콘태양전지 실리콘원소재분석 Concentration (atoms/cm 3 ) 1E18 1E17 1E16 1E15 1E14 B detection limit = 9.5 x 10 12 atoms/cm 3 C max = 4.21 x 10 17 atoms/cm 3 R p = 565 nm 1E18 1E17 1E16 1E15 P detection Limit = 4.1 x 10 13 atoms/cm 3 Cameca IMS-7f of KRISS Matrix Element Detection Limit B 9.5 x 10 12 atoms/cm 3 P 4.1 x 10 Si atoms/cm 3 H 6.9 x 10 16 atoms/cm 3 As 8.3 x 10 12 atoms/cm 3 Listed value of Cameca IMS-7f 1E13 1E14 0 1000 2000 3000 4000 5000 6000 Sputter Depth (nm) 0 2500 5000 7500 10000 12500 15000 Sputter Depth (nm) Cameca IMS-7f 19

실리콘태양전지 결정질실리콘태양전지

실리콘태양전지 결정질실리콘태양전지분석

실리콘태양전지 비정질실리콘박막태양전지

실리콘태양전지 비정질실리콘박막태양전지분석

실리콘태양전지 a-sige: H Measurement

실리콘태양전지 Hydrogen and Dopant Diffusion

태양전지종류에따른표면분석응용 실리콘태양전지 ; 결정질태양전지, 비정질박막 - 미량성분정량분석및깊이분포도 : SIMS - 다층박막두께측정 : SIMS 화합물태양전지 ; CIGS, CdTe, GaAs 박막태양전지 - 주성분정량분석 : XPS, AES, SIMS - 다층박막두께측정 : AES, SIMS 유기물태양전지 ; 염료감응, 유기태양전지 - 유기분자의밴드갭측정 : UPS - 나노구조체크기및표면조성 : AES 나노태양전지 ; 나노선, 양자점태양전지 - 크기및화학상태 : XPS, SPM, AES

화합물박막태양전지 CIGS 박막태양전지 KIER : 변환효율 18.3 % (0.5 cm 2 ) 변환효율 9.7 % (0.5 cm 2 ) 변환효율 10.3 % (16 cm 2 ) LG 마이크론 : 13 % 집적형서브모듈

화합물박막태양전지 CIGS 박막태양전지분석

화합물박막태양전지 CdTe 박막태양전지분석

화합물박막태양전지 CdTe 태양전지분석

화합물박막태양전지 III-V 다중접합태양전지분석

태양전지종류에따른표면분석응용 실리콘태양전지 ; 결정질태양전지, 비정질박막 - 미량성분정량분석및깊이분포도 : SIMS - 다층박막두께측정 : SIMS 화합물태양전지 ; GaAs, CdTe, CIGS 박막태양전지 - 주성분정량분석 : XPS, AES, SIMS - 다층박막두께측정 : AES, SIMS 유기물태양전지 ; 염료감응, 유기태양전지 - 유기분자의밴드갭측정 : UPS - 나노구조체크기및표면조성 : AES 나노태양전지 ; 나노선, 양자점태양전지 - 크기및화학상태 : XPS, SPM, AES

유기물태양전지 염료감응형태양전지 KRICT: 유기금속염료개발 ETRI: 2005 년 DSSC 최초개발 KIST: 11% 국내최고효율 한국전기연구원 : 8% 효율 동진세미켐, 삼성 SDI 사업화 (KIST 박남규박사님자료 )

유기물태양전지 유기태양전지 Donors (p-type Materials) Acceptors (n-type Materials) ( 한국화학연구원이창진박사님자료 )

유기물태양전지 유기폴리머태양전지 PET - Polyethylene terephthalate PEDOT - Poly(3,4-ethylenedioxythiophene) PSS - poly(styrenesulfonate) acceptor donor GIST: Tandem Cell 이용 6.5% 효율 달성 GIST: Tandem Cell 이용 6.5% 효율 달성 GIST 이광희교수님 : 적층구조 6.5% 달성단일구조 6.0 % 달성

나노태양전지 실리콘나노선태양전지 Metal-assisted chemical etching of Si Si H 2 O 2 + 2H + + 2e - H 2 O O 2 + 4H + + 4e - H 2 O SiO 2 - - - e - Ag e - e - 10 nm 실리콘나노선제어기술 Si(100) Diam. = sub 10 nm Etching time determines the aspect ratio of SiNWs. h + h + h + SiO 2 + 4HF H 2 SiF 6 + 2H 2 O Si + 6F - + 4h + SiF 2-6 a cheap process. wafer-scale production of Si NWs. Si P N P 실리콘나노선태양전지 Theoretical predictions (Kayes et al. J. Appl. Phys. 97, 114302, 2005) Si nanowires with a high aspect ratio: allow efficient optical absorption. efficient collection of photogenerated carrier. provide large improvement in efficiency over Si SCs. much less sensitive to impurities vs. Si SCs. 실리콘나노와이어어레이태양전지 Hong Kong City University SEM images of Si nanowires Images from Dr. Huang @ MPI-Halle solar cell modules with a high efficiency can be realized!!

나노태양전지 실리콘양자점태양전지 nm 실리콘양자점제어기술 : 매질및양자점크기제어로밴드갭조절, 1.4 ~ 2.4 ev PL Intensity (a.u.) SiO x 1.84 1.64 1.76 1.52 1.44 1.27 1.16 1.22 0.98 500 600 700 800 900 1000 400 500 600 700 800 900 Wavelength(nm) SiN x 1.10 1.06 1.14 1.02 Wavelength(nm) PL peak energy (ev) 2.6 2.4 2.2 2.0 1.8 SiN x x=1.16 SiO x 1.14 1.1 1.06 1.02 1.6 1.84 1.76 1.4 x=1.64 1.52 1.44 1.2 2 4 6 8 10 12 Excess Si (at. %) Population (%) 18 (b) x=1.0 d=3.2± 0.8 (nm) 16 14 12 10 8 6 4 2 0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Diameter (nm) 단일접합실리콘양자점태양전지 다중접합실리콘양자점태양전지 UNSW Eun-chel Jo 등 2008 Nanotechnology; 10.6 % 효율달성

태양전지를위한표면분석표준확립

표면분석표준확립의 3 요소 소급체계확립 ; - SI 단위소급성 : m, mol 등 - NMI 간측정능력동등성 (CCQM KC) 국제표준제정 ; - 측정방법및절차 (ISO, IEC) 인증표준물질보급 ; - 소급체계에근거인증된표준물질개발 - 분석현장소급체계확립

소급체계확립 측정분석상호인정협약 미터협약 (1875) RMO 상호인정협약체결 (CIPM-MRA,1999) 발효(2005) 국제비교실시 ( 동등성확인 )(1999~) RMO A 국가 NMI NMI B 국가 표준보급 교정기관 APMP 교정기관 표준보급 산업현장 표준보급 KRISS 한국 산업현장 교정기관 기술장벽제거 기술장벽제거 산업현장사용자 국가측정표준상호인정협약 (MRA) 국가측정표준의일치도와교정및측정성적서의효력에대한국제적인정을목적으로 1999. 10. 14 한국을비롯한 38개국대표와 2개국제기구대표들이서명한국가측정표준상호인정협약 (CIPM-MRA) 핵심측정표준국제비교 (Key Comparison) 수행 42

소급체계확립 표면분석소급체계 amount of substance (mol) length (m) Bulk Composition by ID-ICPMS Surface Composition : XPS, AES, SIMS, MEIS Si lattice constant by HR-TEM Film Thickness : TEM, SE, MEIS, XPS Reference Thin Film Growth : UHV-IBSD, UHV-CVD, ALD

소급체계확립 1 미량성분정량분석소급체계 NIST CRM KRISS CRM 10 20 10 B + 10 20 10 B + 10 B Concentration (atoms/cm 3 ) 10 19 10 18 10 17 10 16 10 B Concentration (atoms/cm 3 ) 10 19 10 18 10 17 10 16 10 15 0 100 200 300 400 Sputter Depth (nm) - Peak Conc. of 10 B : 8.37x10 19 /cm 3 - certified by NDP - Primary Standard 10 15 0 100 200 300 400 500 Sputter Depth (nm) - 10 B conc. : 1.39x10 19 /cm 3 (ICP-MS) 1.37x10 19 /cm 3 (SIMS) - Secondary Standard

소급체계확립 1 미량성분정량분석소급체계 Reference Sample Test Sample 10 7 10 7 10 6 28 Si 2 + 10 6 28 Si 2 + 10 5 11 B + 10 5 29 Si 2 + Intensity 10 4 10 3 29 + Si 2 10 B + Intensity 10 4 10 3 11 B + 10 B + 10 2 10 2 10 1 10 1 10 0 0 200 400 600 800 1000 Sputter Time (s) 10 0 0 200 400 600 800 1000 Sputter Time (s)

소급체계확립 2 주성분정량분석소급체계 ICP-MS (Isotope Dilution) ICP-AES Linear Fitting CRM Determined mol amount Fe (µmol) Fe 28 Ni 72 0.1911 0.1959 0.1839 Fe 51 Ni 49 0.1616 0.1717 0.1991 Fe 78 Ni 22 0.2881 0.2329 0.2422 Ni (µmol) 0.5012 0.5135 0.4844 0.1582 0.1684 0.1933 0.0832 0.0659 0.0688 Mol comp. Fe (mol %) 27.60 27.61 27.52 50.53 50.48 50.74 77.59 77.94 77.88 Ave. 27.58 50.59 77.80 Mol comp. Fe (mol %) 27.72 50.57 77.84 Comp. by ICP-OES (Fe at.%) 100 80 60 40 20 X ICPAES =mx ICPMS + C m = 0.999 (0.002), C = 0.110 (0.126) 0 0 20 40 60 80 100 Compo. by ICP-MS (Fe at. %)

소급체계확립 2 주성분정량분석소급체계 E Fe + 22 E Fe + 9 E Fe E Fe - 4 Wide Main Peak RSFs from pure metals Alloy A Fe A Ni C Fe (%) Fe 28 Ni 72 24963 124191 27.53 Fe 51 Ni 49 44331 83416 50.11 Fe 78 Ni 22 71082 37259 78.29 RSFs from Fe 51 Ni 49 alloy Alloy A Fe A Ni C Fe (%) Fe 28 Ni 72 24963 124191 27.92 Fe 51 Ni 49 44331 83416 50.59 Fe 78 Ni 22 71082 37259 78.61 735 730 725 720 715 710 705 700 Binding Energy (ev) E Ni + 28 E Ni + 11 E Ni E Ni - 6 Wide Main Peak 885 880 875 870 865 860 855 850 845 Binding Energy (ev) Composition by XPS (Fe at.%) 100 80 60 40 20 X XPS =mx ICPMS + C m = 1.012 (0.0152), C = -0.652 (0.848) ICP-MS XPS(Pure M) 27.61 27.53 50.59 50.11 77.80 78.29 0 0 20 40 60 80 100 Composition by ICP-MS (Fe at.%) 100 80 60 40 X XPS =mx ICPMS + C m = 1.011 (0.012), C = -0.176 (0.691) ICP-MS XPS (51%) 20 27.61 27.92 50.59 50.59 77.80 78.61 0 0 20 40 60 80 100 Composition by ICP-MS (Fe at. %)

소급체계확립 2 주성분정량분석소급체계 - the intercept in linear fitting is significantly improved Intercept, c 5 4 3 2 1 0-1 -2-3 -4 by RSFs from pure Fe, Ni films m=1.004 c=1.027-5 0.90 0.95 1.00 1.05 1.10 Gradient, m Intercept, c 5 4 3 2 1 0-1 -2-3 -4 by RSFs from a Fe 51 Ni 49 alloy m=1.008 c=0.055-5 0.90 0.95 1.00 1.05 1.10 Gradient, m - quantification is also highly improved by RSFs from pure Fe and Ni by RSFs from a Fe 51 Ni 49 alloy film Certified value Average comp. 28.89 28.11 27.58 Stdev. (σ) 1.45 0.39 Average comp. 79.30 78.69 77.80 Stdev. (σ) 1.31 0.87

소급체계확립 3 nm 초박막두께측정소급체계 2.0 nm SiO 2 Method Strong Weak TEM - traceable to length unit (lattice constant) - direct measurement - composition profile by EELS - capping is required - determination of the positions of surface and interface - complicated sampling XRR HR-RBS SE XPS - traceable to length unit (wavelength) - no need of reference - no need of reference - non-destructive - precise and repeatable - in-process metrology -TSiO 2 < 1 nm is possible - offset value is 0 - reproducible - contamination effect is large - positions of surface and interface - < 2 nm is impossible - deterioration of resolution -high S/N -TSiO 2 > 10 nm is impossible - contamination effect is large - calibration is required - high offset value - electron attenuation length - thickness calibration is required -TSiO 2 > 10 nm is impossible Yield(arb.unit) Δ (degrees) 35 30 25 20 15 10 5 180 170 160 150 140 130 120 110 Sample 3 (3.8 nm) simulation 1.14keV 1 2 3 oxygen 0 80 82 84 86 88 90 Energy(keV) 1.48keV 100 1 2 3 4 5 Photon Energy (ev) Si 40 35 30 25 20 15 10 5 Ψ (degrees) LEXES -TSiO 2 < 1 nm is possible - offset value should be 0 - in-depth information - thickness calibration is required XPS Intensity (counts) 7k 6k 5k 4k 3k 2k SiO 2 Si 1k 108 106 104 102 100 98 96 Binding Energy (ev)

소급체계확립 3 nm 초박막두께측정소급체계 XPS 에의한 SiO 2 박막두께측정법 I I SiO 2 Si = I SiO [1 exp( tox/ Lcos )] = I exp( t /L cosθ ) exp SiO 2 exp Si Si 2 θ ox XPS Intensity (counts) 7k 6k 5k 4k 3k 2k SiO 2 Si 1k 108 106 104 102 100 98 96 Binding Energy (ev) Intensity (cps) 30.0k 25.0k 20.0k 15.0k 10.0k 5.0k 0.0 108 106 104 102 100 98 96 94 Binding Energy (ev) 0 sec 3 sec 6 sec 9 sec 12 sec 15 sec 20 sec 30 sec 40 sec 50 sec 60 sec 70 sec 80 sec t = Lcosθ ln(r exp/r 0 OX + = I SiO R 2 0 I Si R = exp exp SiO exp Si 1) L = Attenuation length of Si 2p I I 2 Film Thickness by XPS, Th XPS (nm) 3.0 2.5 2.0 1.5 1.0 0.5 m : 1.00 (0.010) c : - 0.0004 (0.013) 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Nominal Thickness, Th nom (nm)

소급체계확립 3 nm 초박막두께측정소급체계 상호보정법에의한두께결정법 Scale Traceable Method (STM) - offset : not traceable - thick. : traceable TEM Thickness by STM, T STM (nm) 6 (a) m 1 c 0 5 4 3 2 1 T STM = mt OTM + c Mutual Calibration T STM cert = T STM c T OTM cert = T OTM x m Thickness by STM, T STM (nm) 6 (b) 5 4 3 2 1 m 1 c 0 m 1 c = 0 m = 1 c = 0 0 0 1 2 3 4 5 6 Thickness by OTM, T OTM (nm) 0 0 1 2 3 4 5 6 Thickness by OTM, T OTM (nm) Offset Traceable Method (OTM) - offset : traceable ( = 0) - thick. : not traceable XPS Kim, Metrologia 45, 507 (2008)

소급체계확립 3 nm 초박막두께측정소급체계 SiO 2 박막두께측정용 CRM 개발 XPS (0 offset) + TEM (Traceability in length) Ge Ge Ge Ge Ge 2 nm 3 nm 4 nm 5 nm 6 nm SiO 2 Si sub Si sub Si sub Si sub Si sub T XPS (nm) T TEM (nm) 1.95 2.21 3.16 3.17 4.27 4.44 5.24 5.32 6.05 6.29 Slope, m = 0.999 Offset, c = 0.154 Mutual Calibration T XPS cert = T XPS x 0.999 T TEM cert = T TEM 0.154 T XPS cert (nm) T TEM cert (nm) T cert (nm) 1.98 2.16 2.07 3.21 3.12 3.17 4.34 4.39 4.37 5.32 5.27 5.30 6.15 6.24 6.20 Slope, m = 1.002 - Offset, c = 0.007 -

소급체계확립 4 다층박막두께측정소급체계 Reference Test Sample 19.82 nm Si (20.2 nm) Ge (17.4 nm) Si (19.2 nm) Ge (17.4 nm) Si (19.2 nm) Ge (17.6 nm) Si (18.9 nm) Ge (17.4 nm) Si (19.2 nm) Ge (19.8 nm) Si (100) Substrate

소급체계확립 4 다층박막두께측정소급체계 Definition of Interface : Composition of 50 % Determination of Sputtering Rate - Reference Determination of Film Thickness - Test Sample Intensity (cps) Composition (%) 10 6 10 5 10 4 10 3 10 2 10 1 0 300 600 900 1200 1500 1800 Sputter Time (s) SiGeML40nm - 1k 100 90 80 70 60 50 40 30 20 10 SiGeML40nm - 1k Ge Si Si Ge 0 0 300 600 900 1200 1500 1800 Sputter Time (s) Layer Sputter time(s) Thick. (nm) Sputter rate (nm/s) Si 175.6 36.4 0.208 Ge 151.4 37.5 0.248 Si 172.4 38.7 0.224 Ge 144.3 38.0 0.264 Si 169.0 37.7 0.223 Ge 144.4 37.7 0.261 Si 169.0 37.5 0.222 Ge 140.7 37.6 0.267 Si 169.2 38.0 0.224 Ge 151.4 38.1 0.252 Ave. sput. rate of three int. layers (nm/s) Si 0.223 Ge 0.264 Intensity (cps) Composition (%) 10 6 SiGeML20nm - 1k 10 5 10 4 10 3 10 2 10 1 0 200 400 600 800 1000 Sputter Time (s) 100 90 80 70 60 50 40 30 20 10 Si Ge SiGeML20nm - 1k Si Ge 0 0 200 400 600 800 1000 Sputter Time (s) Layer Sputter time (s) Thick. (nm) Si 87.6 19.55 Ge 66.8 17.66 Si 84.5 18.86 Ge 66.9 17.67 Si 88.0 19.64 Ge 66.9 17.67 Si 84.5 18.86 Ge 70.4 18.60 Si 84.9 18.95 Ge 77.0 20.34 Ave. thick. of three int. layers (nm) Si 19.12 Ge 17.98

소급체계확립 4 다층박막두께측정소급체계 Determination of Film Thickness Film Thickness determined by Sputtering Rate Film Thickness determined by Sputtering Rate & Crater Depth 22 22 Thickness (nm) 21 20 19 18 17 16 Real Thickness Real Thickness Ge Si Thickness (nm) 21 20 19 18 17 16 Real Thickness Real Thickness Ge Si 15 0 1 2 3 4 5 6 7 8 9 Ion Beam Energy (kev) 15 0 1 2 3 4 5 6 7 8 9 Ion Beam Energy (kev)

국제표준제정 ISO/TC-201 (from 1991) ISO TC201 (Surface Chemical Analysis) 분과 분과명 전문가 ISO 표준제정현황제정완료제정중 SC1 Terminology 문대원 3 2 SC2 General Procedure 문대원 1 2 SC3 Data Management and Treatment 문대원 3 1 SC4 Depth Profiling 문대원, 김경중 3 0 SC5 Auger Electron Spectroscopy 강희재 7 1 SC6 Secondary Ion Mass Spectrometry 김경중, 이태걸 4 4 SC7 X-ray Photoelectron Spectroscopy 김정원 8 2 SC8 Glow Discharge Spectroscopy - 2 2 SC9 Scanning Probe Microscopy 김달현 0 5 합계 - 31 19

국제표준제정 Published ISO Standards

인증표준물질 박막증착시스템및방법 Ion Beam Sputter Deposition Step Motor Multilayer Growth Cutting of 6 wafer Gate Valve A B Sample Transporter Substrate Alloy Film Growth DC Gun Target A B Ion Gun Target 148 specimens

인증표준물질 Thin Film CRMs for Depth Analysis Thin Film CRMs for Depth Analysis Multilayer Thin Film : 5 items Binary Alloy Thin Film : 3 items Uniformly Doped Si Thin Film : 1 item

인증표준물질 태양전지분석용인증표준물질 태양전지종류 미량성분정량용도핑박막 주성분정량용합금박막 깊이분포도용다층박막 크기및형상측정용 실리콘원소재 단결정실리콘 다결정실리콘 비정질실리콘박막 CIGS CdTe GaAs 염료감응형 유기태양전지 양자점태양전지 62

요약 표면분석법에의한요소측정분석기술은태양전지 개발, 공정및품질관리에적용될수있다. 소급체계확립, ISO 국제표준개발및인증표준물질 개발보급을통하여태양전지산업의현장표준이확 립된다. 표준화된절차에의한태양전지분석능력및분석 결과신뢰도향상으로태양전지기술개발및생산성 증가로국제경쟁력이제고된다.

감사합니다. Better Standards, Better Life 64