HybridPCK DriveModule FinalDataSheet V3.,9-5- utomotivehighpower
HybridPCK Drive Module Features / Description HybridPCK Drive module with EDT IGBT and Diode T T T VCES = 75 V IC = Typical pplications utomotive pplications Hybrid Electrical Vehicles (H)EV Motor Drives Commercial griculture Vehicles Description The HybridPCKTM Drive is a very compact six-pack module optimized for hybrid and electric vehicles. The product comes with a flat baseplate and is a 75V/ module derivate within the HybridPCK Drive family. The power module implements the new EDT IGBT generation, which is an automotive Micro-Pattern Trench-Field-Stop cell design optimized for electric drive train applications. The chipset has benchmark current density combined with short circuit ruggedness and increased blocking voltage for reliable inverter operation under harsh environmental conditions. The EDT IGBTs also show excellent light load power losses, which helps to improve system efficiency over a real driving cycle. The EDT IGBT was optimized for applications with switching frequencies in the range of khz. Electrical Features Blocking voltage 75V Low VCEsat Low Switching Losses Low Qg and Crss Low Inductive Design Tvj op = 5 C Short-time extended Operation Temperature Tvj op = 75 C The new The HybridPCKTM Drive power module family comes with mechanical guiding elements supporting easy assembly processes for customers. Furthermore, the press-fit pins for the signal terminals avoid additional time consuming selective solder processes, which provides cost savings on system level and increases system reliability. The two products in the The HybridPCKTM Drive family with flat baseplate in the and PinFin baseplate in the FS8R8PLB allow a very cost effective scaling for different inverter power levels at a minimum inverter design effort. Mechanical Features.kV DC sec Insulation High Creepage and Clearance Distances Compact design High Power Density Copper Base Plate Guiding elements for PCB and cooler assembly Integrated NTC temperature sensor PressFIT Contact Technology RoHS compliant UL 9 V module frame Product Name Ordering Code SP855 V3., 9-5-
IGBT,Inverter. Maximum Rated Values Parameter Conditions Symbol Value Unit Collector-emitter voltage Tvj = 5 C VCES 75 V ICN Continuous DC collector current TC = 8 C, Tvj max = 75 C IC nom 5) Repetitive peak collector current tp = ms ICRM 3 Total power dissipation TC = 75 C, Tvj max = 75 C Ptot 53) W VGES +/- V Implemented collector current Gate-emitter peak voltage. Characteristic Values Collector-emitter saturation voltage min. IC = 5, VGE = 5 V IC = 5, VGE = 5 V IC = 5, VGE = 5 V Tvj = 5 C VCE sat typ. max...5.5.35 V IC =, VGE = 5 V IC =, VGE = 5 V Tvj = 5 C Gate threshold voltage IC = 9. m, VCE = VGE Tvj = 5 C VGEth Gate charge VGE = -8 V... 5 V, VCE = V QG. µc Tvj = 5 C RGint.7 Ω Internal gate resistor.5.35.9 5.8,.5 V Input capacitance f = MHz, VCE = 5 V, VGE = V Tvj = 5 C Cies 8. nf Output capacitance f = MHz, VCE = 5 V, VGE = V Tvj = 5 C Coes. nf Reverse transfer capacitance f = MHz, VCE = 5 V, VGE = V Tvj = 5 C Cres.3 Collector-emitter cut-off current VCE = 75 V, VGE = V VCE = 75 V, VGE = V Tvj = 5 C ICES Gate-emitter leakage current VCE = V, VGE = V Tvj = 5 C IGES Turn-on delay time, inductive load IC = 5, VCE = V VGE = -8 V / +5 V RGon =. Ω Tvj = 5 C IC = 5, VCE = V VGE = -8 V / +5 V RGon =. Ω Rise time, inductive load Turn-off delay time, inductive load Fall time, inductive load Turn-on energy loss per pulse Turn-off energy loss per pulse Tvj = 5 C tr.7.8.8 µs IC = 5, VCE = V VGE = -8 V / +5 V RGoff = 5. Ω Tvj = 5 C td off.9.5.5 µs IC = 5, VCE = V VGE = -8 V / +5 V RGoff = 5. Ω Tvj = 5 C tf..5. µs IC = 5, VCE = V, LS = nh VGE = -8 V / +5 V RGon =. Ω di/dt (Tvj 5 C) = 5 /µs di/dt (Tvj 5 C) = /µs Tvj = 5 C IC = 5, VCE = V, LS = nh VGE = -8 V / +5 V RGoff = 5. Ω dv/dt (Tvj 5 C) = 3 V/µs dv/dt (Tvj 5 C) = V/µs Tvj = 5 C per IGBT Thermal resistance, case to heatsink per IGBT λpaste = W/(m K) / 3) n µs Thermal resistance, junction to case ) m td on VGE 5 V, VCC = V VCEmax = VCES -LsCE di/dt ) 5.8.9.3 SC data Temperature under switching conditions nf. tp µs, Tvj = 5 C tp 3 µs, λgrease = W/(m K) top continuous for s within a period of 3s, occurence maximum times over lifetime Eon 3.5 7.5 8. mj Eoff 3.5 9. 3. mj 39 ISC RthJC.8.95 K/W RthCH.5) Tvj op - 5 K/W 3) 5 75 C Verified by characterization / design not by test. cooler alpha = W/(m²K); RthHF_typ =, K/W For Tvjop > 5 C: Baseplate temperature has to be limited to 5 C. 3 V3., 9-5-
3 Diode, Inverter 3. Maximum Rated Values Parameter Conditions Symbol Value Unit Repetitive peak reverse voltage Tvj = 5 C VRRM 75 V Implemented forward current IFN Continuous DC forward current IF 5) Repetitive peak forward current tp = ms I²t - value VR = V, tp = ms, VR = V, tp = ms, 3. 3 I²t 9 ²s ²s Characteristic Values Forward voltage Peak reverse recovery current Recovered charge Reverse recovery energy min. max..5 Tvj = 5 C IF =, VGE = V IF =, VGE = V Tvj = 5 C IF = 5, - dif/dt = /µs () VR = V VGE = -8 V Tvj = 5 C IRM 5 35 37 IF = 5, - dif/dt = /µs () VR = V VGE = -8 V Tvj = 5 C Qr.. 5. µc IF = 5, - dif/dt = /µs () VR = V VGE = -8 V Tvj = 5 C Erec 7. 3. 5. mj RthJC.5.5 K/W RthCH.5) per diode Thermal resistance, case to heatsink per diode λpaste = W/(m K) / Temperature under switching conditions typ..5.3.5 IF = 5, VGE = V IF = 5, VGE = V IF = 5, VGE = V Thermal resistance, junction to case IFRM λgrease = W/(m K) top continuous for s within a period of 3s, occurence maximum times over lifetime VF V..5 Tvj op NTC-Thermistor - 5 min. K/W 3) 5 75 typ. C max. Parameter Conditions Symbol Value Unit Rated resistance TC = 5 C R5 5. kω Deviation of R TC = C, R = 93 Ω Power dissipation TC = 5 C B-value R = R5 exp [B5/5(/T - /(98,5 K))] B-value B-value R/R 5 P5 5 %. mw B5/5 3375 K R = R5 exp [B5/8(/T - /(98,5 K))] B5/8 3 K R = R5 exp [B5/(/T - /(98,5 K))] B5/ 333 K Specification according to the valid application note. ) ) 3) Verified by characterization / design not by test. cooler alpha = W/(m²K); RthHF_typ =, K/W For Tvjop > 5 C: Baseplate temperature has to be limited to 5 C. V3., 9-5-
5 Module Parameter Conditions Symbol Value Unit Isolation test voltage RMS, f = Hz, t = sec VISOL. kv Maximum RMS module terminal current TF = 75 C, TCt = 5 C TC = 85 C, TCt = 5 C ItRMS ) Cu+Ni Material of module baseplate lo3) Internal isolation basic insulation (class, IEC ) Creepage distance terminal to heatsink terminal to terminal dcreep 9. 9. mm Clearance terminal to heatsink terminal to terminal dclear.5.5 mm CTI Comperative tracking index min. Maximum pressure in cooling circuit Tbaseplate < C Tbaseplate > C (relative pressure) TC = 5 C, per switch Storage temperature Mounting torque for modul mounting 3.3).5 p Stray inductance module Module lead resistance, terminals - chip > typ. max. Screw M baseplate to heatsink Screw EJOT Delta PCB to frame LsCE 8. nh RCC'+EE'.75 mω Tstg - 5 M.8.5.. Nm.5.55) G Weight bar C g ) Ni plated Cu baseplate. Improved lo3 ceramic. ccording to application note N-HPD-SSEMBLY ) EJOT Delta PT WN 55 3x. Effective mounting torque according to application note N-HPD-SSEMBLY ) 3) 5 V3., 9-5-
Characteristics Diagrams output characteristic IGBT,Inverter (typical) IC = f (VCE) VGE = 5 V output characteristic IGBT,Inverter (typical) IC = f (VCE) Tvj = 5 C 9 9 IC [] IC [] VGE = 9V VGE = 7V VGE = 5V VGE = 3V VGE = V VGE = 9V,,,,,8,,,,,8,, VCE [V] transfer characteristic IGBT,Inverter (typical) IC = f (VGE) VCE = V,,,8,,,, VCE [V],8 3, 3,, 9 switching losses IGBT,Inverter (typical) Eon = f (IC), Eoff = f (IC), VGE = +5 V / -8 V, RGon =. Ω, RGoff = 5. Ω, VCE = V 7 Tvj = 5 C Eon, Eoff, Eon, Eoff, 5 9 E [mj] IC [] 3 5 7 8 9 VGE [V] IC [] V3., 9-5-
switching losses IGBT,Inverter (typical) Eon = f (RG), Eoff = f (RG), VGE = +5V / -8V, IC = 5, VCE = V transient thermal impedance IGBT,Inverter ZthJC = f (t) thermal grease W/(m*K), cooler alpha = W/(m²*K) Eon, Eoff, Eon, Eoff, ZthJC : IGBT, E [mj] ZthJC [K/W] 8, i: 3 ri[k/w]:,5,55,,3 τi[s]:,,3,5,5 8 RG [Ω] 8,, reverse bias safe operating area IGBT,Inverter (RBSO) IC = f (VCE) VGE = +5V / -8V, RGoff = 5, Ω,,, t [s] capacity characteristic IGBT,Inverter (typical) C = f(vce) VGE = V, Tvj = 5 C, f = MHz Cies Coes Cres 9 C [nf] IC [] IC, Modul IC, Chip, VCE [V] VCE [V] 7 V3., 9-5-
gate charge characteristic IGBT,Inverter (typical) VGE = f(qg) VCE = V, IC = 5, Tvj = 5 C maximum allowed collector-emitter voltage VCES = f(tvj), verified by characterization / design not by test ICES = m for Tvj 5 C; ICES = 3 m for Tvj > 5 C 5 QG VCES 775 9 75 VCES [V] VGE [V] 3 75-3 75 - -9 3 5-5 5-5 5 5 QG [µc] forward characteristic of Diode, Inverter (typical) IF = f (VF) 75 5 5 75 Tvj [ C] switching losses Diode, Inverter (typical) Erec = f (IF), RGon =. Ω, VCE = V Tvj = 5 C Erec, Erec, 8 9 E [mj] IF [] 8,,,,,8,,,,,8,, VF [V] 8 IF [] 9 V3., 9-5-
switching losses Diode, Inverter (typical) Erec = f (RG), IF = 5, VCE = V transient thermal impedance Diode, Inverter ZthJC = f (t) thermal grease W/(m*K), cooler alpha = W/(m²*K) Erec, Erec, 8 ZthJC : Diode, ZthJC [K/W] E [mj] 8, i: 3 ri[k/w]:,5,,5, τi[s]:,,3,5,5 8 RG [Ω] 8,,,, t [s] NTC-Thermistor-temperature characteristic (typical) R = f (T) Rtyp R[Ω] 8 TC [ C] 9 V3., 9-5-
7 Circuit diagram P P P3 T C C3 C5 T T G G3 G5 E E3 E5 U C T3 V C W T C T G G G E E E T5 T T N N N3 V3., 9-5-
8 Package outlines V3., 9-5-
9 Label Codes 9. Module Code Code Format Data Matrix Encoding SCII Text Symbol Size x Standard IEC7 and IEC Code Content Content Module Serial Number Module Material Number Production Order Number Datecode (Production Year) Datecode (Production Week) Digit -5 - - 9 - - 3 Example (below) 759 8 55599 5 3 Example 75985559953 9. Packing Code Code Format Code8 Encoding Code Set Symbol Size 3 digits Standard IEC8859- Code Content Content Backend Construction Number Production Lot Number Serial Number Date Code Box Quantity Identifier X T S 9D Q Digit -9-9 - 5 8-3 33-3 Example (below) 9559 X3E 75389 39 5 Example X9559TX3ES75389D39Q5 V3., 9-5-
Revision History Major changes since previous revision Revision History Reference Date Description V. 8-3-7 - V. 8--8 Correction of pin designation in package outlines V3. 9-5- - 3 V3., 9-5-
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