F eedb a ck V H F 100W a t t T h e Design of VHF Br oadb an d 100W at t P ow er Am plifier s By F eedb ack Cir cuit 2001
F eedb a ck V H F 100W a t t T h e Design of VHF Br oadb an d 100W at t P ow er Am plifier s By F eedb ack Cir cuit 200112
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Abstract. 1. 2 A. Balun 2 1. balun (transmissin line transformer balun ) 4 1) 1:1 balun 5 2) 1:4 balun 7 3) 1:9 balun 10 2. balun 11 1) 1:1 balun 11 2) 1:4 balun 13 3) 1:9 balun 13 B. (feedback ) 14 1. 15 1) 15 2) 16 3) 16 4) 17 2. 18 3. 20 4. FET BJT 22 1) FET 22 - i -
2) BJT 24. 25 A. 25 B. Balun T ransformer 27 1) Balun 27 2) 1:1 balun 29 3) 1:4 balun 33 C. feedback simulation 38 D. 41. 44 45 - ii -
1. wire- w ound balun 2 2. balun 3 3. 5 4. Ruthroff 1:1 Balun 5 5. Ruthroff 1:1 BalunLow - frequency model 6 6. Guanella 1:1 BalunLow - frequency model 6 7. Ruthroff 1:4 Balun High - frequency model 7 8. Guanella 1:4 Balun High- frequency model 8 9. 1:4 BalunLow - frequency model 9 10. Guanella 1:9 Balun High- Frequency model 10 11. Guanella 1:9 Balun Low - frequency model 10 12. (a) Balun (b) 11 13. Balun 12 14. 1:4 Balun 13 15. 1:9 Balun 13 16. GaAs FET BJT 14 17. 18 18. 19 19. 20 20. 20 21. (a) BJT (b ) GaAs FET 22 22. (a) GaA s FET model (b ) BJT model 22 23. Block 26 - iii -
24. Balun 27 25. Balun port 28 26. Core1:1 Balun 29 27. Core1:1 Balun 30 28. 1:1 Balun port 30 29. 1:1 Balun balanced port 31 30. 1:1 Balun balaced port 32 31. 1:1 Balun balanced port 32 32. 1:4 simulation 33 33. 1:4 simulation 34 34. 1:4 back - to- back 34 35. 1:4 Balun port 35 36. 1:4 Balun balanced port 35 37. 1:4 Balun balanced port 36 38. 1:4 Balun balannced port 36 39. Scalar Network Analyzer 37 40. D1008UK 38 41. simulation 39 42. simulation 39 43. simulation 40 44. 41 45. ( ) 42 46. 43 47. 43 - iv -
1. 25 2. 42 - v -
Ab str act In this thesis, a broadband high pow er amplifier which operates ov er 20MHz 300MHz is designed and manufactured. Matching netw orks ar e m ade of coaxial balun transformer s which hav e good broadband fr equency char act eristics, low los s and low phase unbalance. And feedback cir cuit s ar e u sed to improv e a br oadband gain flatness. T his amplifier has the pow er gain of 50dB and gain flatness below 1.5dB ov er it s operating fr equency band. W hen 0dBm pow er is applied, the output pow er is more than 50dBm. Also, it has 35% pow er efficiency ov er the design band. - vi -
20MHz 300MHz. balun transformer., (feedback )., 20MHz 300MHz 50dB, 1.5dB., 0dBm, 50dBm., 35%. - vii -
. VHF, UHF T V,,.. balun. 20MHz 300MHzmulti- octave band, reactance., balun (transformer ).,. - 1 -
. [1] [2 ] [3 ] [4 ] [5 ] A. Balun Balunbalanced- to- unbalanced unbalanced- to- balanced, reference unbalanced balanced. balun,,.,, push - pull., balun. balun. 1. wire- wound balun 1. winding 2-2 -
winding DC isolation, flux linkage interwinding capacitance. 2. balun balun2 balun. - 3 -
1. balun (transmissin line transformer balun) balunwindingwinding, flux conventional currentcoil choking action. choking reactance ferrite core. conventional current, balun,. balun. conventional currentcoil reactance coil reactance. Ruthroff Guanella, balun., balanced port Guanella balun, Ruthroff balunport balanced port. 3. R L. ) 4, ) 5 balun, ) 2, ) 3 2 boot - strap. - 4 -
3. 1) 1:1 balun 4. Ruthroff 1:1 Balun Ruthroff baluntoroidal rod. 4 toroidal 1:1 balun. + V 1 / 2., 2 ( + V 1/ 2 - V 2 ). 1-23- 4 (R L = Z o ), V 2 = V 1, 2 - V 1 / 2. - 5 -
balanced.. Ruthroff, Guanella 1:1 balun., Ruthroff negative effect., core flux. coiling 1:1 balun R L 0. 5. Ruthroff 1:1 Balun Low - frequency m odel 6. Guanella 1:1 Balun Low - frequency m odel 41:1 balun. choking,,. Z in = Z o Z L + jz o tan l Z o + jz L tan l (1) - 6 -
, Z o =, Z L = l = = 2 / ( effective wavelength), Z o = Z L,, l. 2) 1:4 balun 1:4 balun1:1 balun. 1:1 balun 1:4 balun. ) Ruthroff balun, ) Guanella balun. 1:1 balun, R L floating". 7. Ruthroff 1:4 Balun High- frequency model Ruthroff balun, 3-7 -
R L + V 1, R L - V 1., V out = 2 V 1, 1:4. 8. Guanella 1:4 Balun High- frequency model, Guanella balun, V 1. balunfloating. 1) Ruthroff balun. balanced., Guanella balun., 5012.5balanced load. 2) Ruthroff balun, Guanella balun. 180 0. Guanella balun coiling. ( R L / 2 = Z o ),, - 8 -
Guanella balun. (a) 9. 1:4 BalunLow - frequency model (a) Ruthroff model (b ) Gualnella m odel - 9 -
3) 1:9 balun 10Guanella 1:9 balun. Z o = R L / 3, V 1. 10. Guanella 1:9 Balun High- Frequency model 11. Guanella 1:9 Balun Low - frequency model - 10 -
Guanella balun - 1:9, 1:16 balun. 2. balun 1) 1:1 balun wire- wound balun core balun. (a) (b) 12. (a) Balun (b) - 11 -
12 unbalanced, floating balanced. charge conservation line, 180. 1/ 2., = 90 o,., Z A 2 = 2 R 50 (2) 12(b ). field, field field Z B. 13. Balun 13balun. balunbandwidth ( VSW R ), 50/ 2R line Bline C. - 12 -
2) 1:4 balun 14. 1:4 Balun Z in = V i I i = 2v o I o / 2 = 4 ( V o I o ) = 4R L, ( wher e, Z o = 2R L ) (3) 3) 1:9 balun 15. 1:9 Balun Z in = V i = 3 V o I i I o / 3 = 9R L ( wher e, Z o = R L 9R L = 3R L ) (4) - 13 -
[6 ] [7 ] [8 ] [9 ] B. (feedback) (negative feedback) VSWR,..,.,., (2- decade ). 16. GaAs FET BJT - 14 -
[10 ] [1 1] [12 ] [13 ] [14 ] [15 ] [16 ] 1. 1),,, BJT FET. (sensitivity ). A f = A 1 + A (5), A da f A f = 1 1 + Af da A (6) 1/ 1 + A. (desensitivity factor) D. D 1 + A (7) D. A f A D. A f = A / D (8) A 1 A f = A 1 + A A A = 1 (9).. - 15 -
. 2) ( L C),... 3). (nonlinear distortion ).. 2harmonic. 2harmonic B 2, 2harmonic B 2f B 2f B 2. - B 2f - A B 2f. 2harmonic B 2 - A B 2f. B 2 - A B 2f = B 2f (10) B 2f = B 2 1 + A = B 2 D (11) - 16 -
A 2harmonic. 4) 1/ D. D1., 1 + A... - 17 -
2. [9 ] 17. 17. - V be, v in,. i e v in R E (12) i c v in R E (13) 1 R E i c v in (14)., - 18 -
v out = - i c R c (15),. A v = v out v in - R C R E (16) 18. 18., v in = i b r be + ( i b + i b )R E = i b ( r be + ( 1 + )R E ) (17), r in = v in i b = r be + ( 1 + ) R E (18).,. RF,. ballast. - 19 -
3. [9 ] 19. 19 R F B. R in = 0,, i in v out = - i in R F B (19) 20. - 20 -
transresistance r T = v out v in = - R F B (20) A i = i out i in = - R F B R C (21), r in r in = R C + R F B 1 + R F B + ( 1 + )R C r be (22).. - 21 -
[8 ] [10 ] [1 1] 4. FET BJT GaAs FET BJT.. 1) FET 21. (a) BJT (b) GaAs FET 22. (a) GaA s FET model (b ) BJT model FET matrix. i [ 1 = 2 i ] g m 1 + g m R 1-1 R 2-1 1 R 2 1 R 2 v [ 1 v 2 ] R 2 (23) - 22 -
BJT matrix r be + R 1 R 2. Y- parameters - parameter S 11 = S 22 = 1 D [ 1 - g m Z o 2 R 2 ( 1 + g m R 1) ] S 21 = 1 D ( - 2g m Z o 1 + g m R 1 + 2Z o R 2 ) (24) (25) S 12 = 2Z o DR 2 (26) D = 1 + 2Z o R 2 + g m Z o 2 R 2 ( 1 + g m R 1 ) (28) (24)(28)(, VSWR=1), S 11 = S 22 = 0 1 + g m R 1 = g m Z o 2 R 2 (29) R 1 = Z o 2 R 2-1 g m (30) (25)(36) S 21 = Z o - R 2 Z o (31) S 12 = Z o R 2 + Z o (32) S 21 parameter, R 2.,. R 1 R 2. R 1-23 -
, ( Z o 2 / R 2 ) 1/ g m transconductance g m( min ), g m( min ) = R 2 Z o 2 (33), g m( m in ) g m. g m R 1 R 2 Z O 2, VSW R. 2) BJT matrix v [ 1 = v 2 ] r be i [ 1 2 i ] 1 + r be g m r be + R 1 + g m r 1 be 1 + g m r be g m r be ( R 1 - R 2 ) + r be + R 1 R 1 + R 2 + r be + g m r be R e 1 + g m r be (34), g m r be 1 g m, S - parameter, [ S] = R 1 R 2 - Z o 2 2R 1 Z o + R 1 R 2 + Z o 2 2(R 1 - R 2 )Z o 2R 1 Z o 2 + R 1 R 2 + Z o 2 2R 1 Z o 2R 1 Z o + R 1 R 2 + Z o 2 R 1 R 2 - Z o 2 2R 1 Z o + R 1 R 2 + Z o 2 (35) R 1 R 2 = Z o 2, S 11 = S 22 = 0. - 24 -
. VHF..,, balun. A. 1. 1 100W att min. 2 20~300MHz 3 class Class AB 4 RF 0dBm typical 5 DC 28VDC 6 Efficiency 40% typical(t BC) 7 RF VSWR 1.5:1 max 8 Load VSW R 2:1 9 1.5dB 1. RF 0dBm 100W 50dB. 23 3. 1W, Seme Lab 40WMOSFET D1008UK. Seme Lab - 25 -
150WMOSFET D1020UK. MOSFET push- pull.. 23. Block - 26 -
B. Balun T ransformer 20MHz 300MHzbalun,. 50, 1:1 balun, 1:4, 1:9., ferrite core. ferrite balun 30MHz, balun. 1) Balun Balunbalanced port port 180 o., balanced port. 50, balanced port 1:1 balun 25, 1:4 balun 6.25. 24. Balun - 27 -
241:1 balun. balanced port25 / 4 microstrip, 50 balanced port50. 25. Balun port, / 4, ( 25),,, balun. balun. - 28 -
2) 1:1 balun 50 1:1 balun.,, floating balun. ferrite ferrite, / 4., 300MHz., ring ferrite core. 26. Core1:1 balun 26ferrite core. 30MHz. ferrite core,. 27Core. - 29 -
27. Core1:1 Balun 28. 1:1 Balun port - 30 -
11.5dB, 8.2dB 1:1 balunbalanced port3.3db. 29. 1:1 Balun Balanced port balanced port0.5db. Balun,. balanced port 180 o. 30 31port. 180 o, 400MHz 177 o. - 31 -
30. 1:1 Balun balanced port 31. 1:1 Balun balanced port - 32 -
3) 1:4 balun 1:4 25. 25 501:4.. 25, 50, 50 25. 25 50 1:4. simulation. 32. 1:4 simulation - 33 -
33. 1:4 simulation. 34. 1:4 back - to- back 341:4 back - to- back. - 34 -
35. 1:4 Balun port 36. 1:4 Balun balanced port - 35 -
35 361:4 balunbalanced port. 14dB,,. 37. 1:4 Balun balanced port 38. 1:4 Balun balanced port - 36 -
balanced port 180 o. scalar netw ork analyzer. 39. Scalar Network Analyzer 503, 1:9 balun. - 37 -
C. feedback simulation D1008UK40W push - pull. D1008UK, simulation,. parameter, simulation. 40. D1008UK 4050. 20dB. DC.,. DC, 300MHz. - 38 -
41. simulation 42. simulation, balun. simulation 8, 25, 1:4balun 1:1 balun. - 39 -
43. simulation 43. D1020UK150W, 40WD1008UK, push - pull..,. balun1:91:4.. - 40 -
D. Motorola CA 1081CSeme Lab D1008UK, Semel Lab D1020UK. 44. 40dB,. S 21. Motorola MMIC CA 1801C,. 45., 0dBm. 20MHz 300MHz 50dB - 41 -
1.5dB., 35%. 45. ( ) 2. 1 100Watt 2 20~300MHz 3 Efficiency 35% 4 RF - 30dB 5 1.5dB - 42 -
46. 47. - 43 -
. 20MHz 300MHz balun, 0.5dB, 20dB. push- pull MOSFET, 100W., 0dBm, 50dB, 1.5dB, VSWR 1.5:1, 35. balun. Balun, 50.,,. - 44 -
[1] Jerry Sevick, T ransm iss ion L ine T ransform ers, Am erican Radio Relay League, 2nd Edition [2] Peter Vizmuller, R F D es ig n Guide- Sys tems, Cir cuits, and E qua tions, Artec Hou se, 1995 [3] R.E.Collin, F ounda tions for M icr owave E ng in eering, M c- Graw Hill, inc., 1966. [4] Motorola Semiconductor Application Note AN 1034, " T hr ee Balun Designs for Push- Pull Amplifier s", 1993. [5] J. Helszajn, Synthes is of L ump ed E lem ent, D is tributed and P lana r F ilters, pp. 102-123, McGraw - Hill, 1990. [6] W. K. Chen, P ass ive and A ctive F ilters, John Wiley & Sons, Inc., 1986. [7] G.M atthaei, L.Youn g, E.M.T.Jones, M icrowa ve F ilters, I mp edance - M a tching N etworks and Coup ling S tructures, Artech Hou se, 1980. [8] G. Gonzalez, M icrowave Trans is tor Amp lifiers : Analys is and D esig n, 2nd edition, Pr entice Hall, pp.175-194, 1997 [9] Peter B. Kenington, H ig h- Linearity RF Amp lifier D es ign, Artech Hou se Publisher s, 2000. [10] U. Karacaoglu, I. D. Robert son, " MMIC Activ e Bandpass Filter Using Negative Resistance Element s", in 1995 IEE E M TT - S Int. M icrowave Symp. D ig., pp.135-138,, Jun., 1995 [11] W. Schwab and W. Menzel, "A Low - Noise Active Bandpass Filter", - 45 -
I E E E M icrowave and Guided wave L etters, vol. 3, N o. 1, pp.1-2, Jan., 1993 [12] S. E. Sussman- Fort, "Design Concepts for Microwave GaAs FET Active Filters", IE E E Trans. M icrowave Theory Tech., vol. M TT -37, N o.9, pp.1418-1424, Sep. 1989 [13] F. Sabouri- S, " A GaA s MMIC Activ e Filter w ith Low Noise and High Gain", in 1998 IEE E M TT - S Int. M icrowave Symp. D ig., pp.1177-1180, Baltimore, Jun., 1998 [14] C. Rau scher, " Microw ave A ctive Filter s Based on T r an sv er sal and Recur siv e Principles", I E E E T rans. M icr owave Theory T ech., vol. M TT -33, N o.12, pp.1350-1360, Dec. 1985 [15] M. J. Schindler, Y. T ajima, " A Nov el MMIC A ctive Filter with Lumped and T ransversal Elements", IE E E Trans. M icrowave Theory Tech., vol. M TT - 37, N o.12, pp.2148-2153, Dec. 1989 [16], Double Feedback LoopRF,, 1994. - 46 -