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1 LCD (Liquid Crystal Display) OLED (Organic Light Emitting Diode) TV,,. 1) OLED LCD OLED LCD Fig. 1. OLED TV 2013 LG 55 OLED TV. SID (Society of Information Display) OLED (Fig. 2). OLED LCD, TFT. TFT 3. LCD (a-si), (p-si), (Oxide). (a-si) TFTLCD.,., (1 cm 2 /V S) 2,3) 4), OLED. (p-si) TFT. Fig. 1. OLED. 26

2 Fig. 2. SID 2013 () : LG Display UHD OLED Curved TV () : Samsung Display UHD OLED TV.. 100,. 5),, ( ).,..,.. (Fig. 3),.,., (E g > 3eV) Hosono et al. In-Ga-Zn-O 6). (Fig. 4)., 2p state. ns state, ns,.,, ns., InGaZnO. 7) Nomura et Fig

3 Fig. 4. () :, () :. 6) al. ZnO, Ga 2O 3, In 2O 33. Fig. 5. Fig. 5 hall,. Fig. 5 In Zn.., Ga Ga,., Ga-O In-O Zn-O Fig ). 8), Ga. trade off.,. In, Ga, Ge, Ag, Au. In, Cd, Hg, Ti, Pb., Cu, Ag, Au., In Ga. 9-15) Fig. 6. In Ga Zr 9), Hf 10), La 11), Si 12), Mg 13), Sn 14), Al 15). OLED. LG OLED TV Sharp, AUO TFT OLED TV.,, 28

4 Fig. 6. ( :, : In Ga ).. TFT., LTPS (Low-Temperature Poly-Silicon)., OLED TFT. OLED TFTLCD (Switching) (Driving) On/Off. OLED TFT. OLED 2T1C (2 1 )., (Fig. 7) 17), 5~6 1~2.. OLED...,, (60 Hz 120, 240 Hz, : 1 On ). TFT.,, TFT TV 30 cm 2 /Vs. TFT, TFT OLED (Mobility, µ). LCD.., OLED. LCD,. 16)., Fig. 7. OLED (, 5T2C). 17) 29

5 . Oh et al. 18) IZO. In (In : , 7.2 cm 2 /Vs 41.0 cm 2 /Vs, 0.42 V/decade 0.20 V/decade)., -7.9 V (NBIS, V GS = V th-15 V, V DS = 10 V, = 2000, : 1.5 mw/cm 2, : ~ 600 nm).,. 19) Kim et al. 19) HIZO, IZO. HIZO, IZO. 10) IZO,. 18) HIZO/IZO cm 2 /Vs. Fig. 8 IZO HIZO/IZO NBIS NBIS., (Polycrystalline). 20) Indium-Tin-Oxide IZGO (> 20 cm 2 /Vs). 21) (2.5 atm, 5 atm). Kim et al. 22) ZnO. ZnO, Off. 17), ZnON. Fig. 9 ()ZnO 3.2 ev (Vacancy)... 23) ZnO ZnO (Valence band)..,. ZnON V DS = 10 V40 cm 2 /Vs.,. 40 cm 2 /Vs. (Conduction band),. Fig. 8. () : IZO NBITS. () : HIZO/IZO NBITS. ( : : 3 VG = -20V, VD = 10V, : 120lux, : 60C). 19) 30

6 Fig. 9. () : ZnO ZnON. () ZnO, ZnON, In2O3, Zn2O3 E-k. 20) Fig. 9(), ZnON ZnO. TFT. TFT. OLED TFT. OLED TFT LCD TFT. Fig. 10 OLED LCD. Fig. 10LCD TFT 1 1 (Capacitor). 1 TFT. LCD, On Off. LCD TFT Off., OLED TFT 2 1., TFT LCD, TFT (Driving)., Off, On. TFT 0.1 V, OLED 20%. 16)... Fig. 11,. (H 2O, O 2, H 2 ). Fig. 10. LCD OLED. 31

7 Fig. 11. /. Fig. 12. / (O2, H2O). 24) Fig ) + (+ 30 V),, ( O 2) (O 2(g)+e - O - 2(s)).,., O 2,., - (- 30 V),, H 2O. (H 2O (g)+h + H 2O + (s)),, H 2O... (Hole trapping).. 23),.,. 25) Yang et al. 25) Al-Sn-Zn-In-O (A)(B). Plasma Enhanced Atomic Layer Deposition (PEALD) 40 nm. 250C. Fig. 13A B , -20 V. A 31.4 cm 2 /Vs, 0.63 V, 0.14 V/decade, B A 0.77 V, 0.09 V/decade. (a) (b),,., (c) (d), V, 11.5 V..,. 32

8 Fig Fig. 13. (a) : (NBS, Negative Bias Stress) A (b) : B NBS (c) : (NBIS) (d) : B NBIS. 25) (Bias Stress), (Temperature Stress), (Illumination Stress)......,. Fig. 14..,,., NBS (Negative Bias Stress), PBS (Positive Bias Stress). NBTS (Negative Bias Temperature Stress), PBTS (Positive Bias Temperature Stress). NBIS (Negativ Bias Illumination Stress), PBIS (Positive Bias Illumination Stress), NBITS (Negative Bias Illumination Temperature Stress), PBITS (Positive Bias Illumination Temperature Stress). 24, 26). Cross et al. 26) ZnO. p ZnO rf -30 V Fig. 15(). (Degradation).,. Liu et al. 24) IZO 33

9 Fig. 15. () : ZnO NBS ( : 1, : 15). 26) () : IZO NBS ( : torr, : 3). 24) torr, +30 V/-30 V 3. Fig. 15()... (BIS). Shin et al. 23) ZnO NBIS. On (+ 10 V ), Off (- 10 V ) 12, (peak) 540 nm, 515 nm 555 nm 0 1m W/cm 2. Fig. 16 ZnO. ZnO n On, Off., On, Off... ZnO n ZnO On (Major Carrier), (Minor Carrier). Off,. Fig. 16. (a): On/ (b) : On/ (c) : Off/ (d) : Off/. 23) 34

10 On.,. On., Off,,. Chowdhury et al. 27) IGZO -. IZGO.,. (NBTS). Park et al. 28) GIZO NBTS PBTS. GIZO Ga 2O 3/In 2O 3/ZnO 1:1:1. SiO x 200 nm SiO x 100 nm. Fig. 17 GIZO PBTS NBTS C, PBTS +20 V, NBTS -10 V V.,.,. Kwon et al. 29) GIZO (Fig. 18). ES (Etch Stopper) BCE (Back Channel Etch). Etch Stopper ES, BCE. ES SiO x 200 nmpecvd (Plasma Enhanced Chemical Vapor Deposition), SiO x 200 nm PECVD. GIZO 70 nm. Fig. 19NBITS. 3 V GS= -20 V, V DS= 10 V, 180 lm/m 2. Fig. 19 () BCE, () ES., Etch Stopper. ES V, ES -0.8 V.. Kim et al. 30) (SiO x, SiON x, SiO x /SiON x) NBITS, Lee et al. 31) NBTIS. Fig. 17. () : GIZO NBTS () : GIZO PBTS. 28) (VG = -10V/+20V, VD = 10.1V, : 11000). Fig. 18. () : BCE TFT () : ES TFT. 29) 35

11 Fig. 19. () : BCE(Back-Channel Ecth) GIZO NBITS. () : ES(Etch-Stopper) GIZO NBITS. 30) AMOLED.,.. AMOLED,. 1. H. Ohshima and D-L Ting, Turning Points in Mobile Display Development, SID Symp. Dig. Tech. Pap., 42 [1] (2011). 2. F. R. Libsch and J. Kanicki, Bias Stress Induced Stretched Exponential Time Dependence of Charge Injection and Trapping in Amorphous Thin Film Transistors, Appl. Phys. Lett., 62 [11] 1286 (1993). 3. M. J. Powell, Charge Trapping Instabilities in Amorphous Silicon-silicon Nitride Thin-film Transistors, Appl. Phys. Lett., 43 [6] 597 (1983). 4. S. C. Deane, R. B. Wehrspohn, and M. J. Powell, Unification of the Time and Temperature Dependence of Dangling-bond-defect Creation and Removal in Amorphous-silicon Thin-film Transistors, Phys. Rev. B, 58 [19] (1998). 5. P. Gaucci, L. Mariucci, A. Pecora, G. Fortunato, and F. Templier, Electrical Stability in Self-aligned P-channel Polysilicon Thin Film Transistors, Thin Solid Films, 515 [19] (2007). 6. K. Hosono, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Room-temperature Fabrication of Transparent Flexible Thin-film Transistors Using Amorphous Oxide Semiconductors, Nature, (2004). 7. K. Nomura, A. Takagi, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, Amophous Oxid Semiconductors for High-Performance Flexible Thin-Film Transistors, Jpn. J. Appl. Phys., 45 [5S] (2006). 8. T. kamiya K. Nomura, and H. Hosono, Electronic Structures Above Mobility Edges in Crystalline and Amorphous In-Ga-Zn-O: Percolation Conduction Examined by Analytical Model, J. Disp. Technol., 5 [12] 462 (2009). 9. J. S. Park, K. S. Kim, Y. G. Park, Y. G. Mo, H. D. Kim, and J. K. Jeong, Novel ZrInZnO Thin-film Transistor with Excellent Stability, Adv. Mater., 21 [3] (2009). 10. C. J. Kim, S. Kim, J. H. Lee, J. S. Park, S. Kim, J. Park, E. Lee, J. Lee, Y. Park, J. H. Kim, S. T. Shin, and U. I. Chung, Amorphous Hafnium-indium-zinc Oxide Semiconductor Thin Film Transistors, Appl. Phys. Lett., 95 [25] (2009). 11. D. N. Kim, D. L. Kim, G. H. Kim, S. J. Kim, Y. S. Rim, W. H. Jeong, and H. J. Kim, The Effect of La in InZnO Systems for Solution-processed Amorphous Oxide Thin-film Transistors, Appl. Phys. Lett., 97 [19] (2010). 12. E. Chong, Y. S. Chun, and S. Y. Lee, Amorphous Silicon-indium-zinc Oxide Semiconductor Thin Film Transistors Processed Below 150 C, Appl. Phys. Lett., 97 [10] (2010). 13. G. H. Kim, W. H. Jeong, B. D. Ahn, H. S. Shin, H. J. Kim, H. J. Kim, M. K. Ryu, K. B. Park, J. B. Seon, and S. Y. Lee, Investigation of the Effects of Mg Incorporation into InZnO for High-performance and High-stability Solution-processed Thin Film Transistors, Appl. Phys. Lett., 96 [16] (2010). 14. E. M. C. Fortunato, L. M. N. Pereira, P. M. C. Barquinha, A. M. B. do Rogo, G. Goncalves, A. Vila, J. R. Morante, and R. F. P. Martins High Mobility Indium Free Amorphous Oxide Thin Film Transistors, Appl. Phys. Lett., 92 [22] (2008). 15. D. H. Cho, S. Yang, C. Byun, J. Shin, M. K. Ryu, S. H. K. Park, C. S. Hwang, S. M. Chung, W. S. 36

12 Cheong, S. M. Yoon, and H. Y. Chu Transparent Al- Zn-Sn-O Thin Film Transistors Prepared at Low Temperature, Appl. Phys. Lett., 93 [14] (2008). 16. H. J. In and O. K. Kwon, External Compensation of Nonuniform Electrical Characteristics of Thin-Film Transistors and Degradation of OLED Devices in AMOLED Displays, IEEE. Elect. Dev. L., 30 [4] (2009). 17. Y. G. Mo, M. Kim, C. K. Kang, J. H. Jeong, Y. S. Park, C. G. Choi, H. D. Kim, and S. S. Kim, 69.3: Amorphous Oxide TFT Backplane for Large Size AMOLED TVs, SID Symp. Dig. Tech. Pap., 41 [1] (2010). 18. S. Oh, B. S. Yang, Y. J. Kim, M. S. Oh, M. Jang, H. Yang, J. K. Jeong, C. S. Hwang, and H. J. Kim, Anomalous Behavior of Negative Bias Illumination Stress Instability in an Indium Zinc Oxide Transistor: A Cation Combinatorial Approach, Appl. Phys. Lett., 101 [9] (2012). 19. H. S. Kim, J. S. Park, H. K. Jeong, K. S. Son, T. S. Kim, J. B. Seon, E. Lee, J. G. Chung, D. H. Kim, M. Ryu, and S. Y. Lee, Density of States-Based Design of Metal Oxide Thin-Film Transistors for High Mobility and Superior Photostability, ACS Appl. Mater. Inetr., 4 [10] (2012). 20. K. Ebate, S. Tomai, Y. Tsuruma, T. Iitsuka, S. Matsuzaki, and K. Yano, High-Mobility Thin-Film Transistors with Polycrystalline In-Ga-O Channel Fabricated by DC Magnetron Sputtering, Appl. Phys. Express, 5 [1] (2012). 21. S. Y. Park, K. H. Ji, H. Y. Jung, J. I. Kim, R. Choi, K. S. Son, M. K. Ryu, S. Lee, and J. K. Jeong, Improvement in the Device Performance of Tin-doped Indium Oxide Transistor by Oxygen High Pressure Annealing at 150C, Appl. Phys. Lett., 100 [16] (2012). 22. H. S. Kim, S. H. Jeon, J. S. Park, T. S. Kim, K. S. Son, J. B. Seon, S. J. Seo, S. J. Kim, E. Lee, J. G. Chung, H. Lee, S. Han, M. Ryu, S. Y. Lee, and K. Kim, Anion Control as a Strategy to Achieve High- Mobility and High-stability Oxide Thin-film Transistors, Sci. Rep-uk, (2013). 23. J. H. Shin, J. S. Lee, C. S. Hwang, S. H. K. Park, W. S. Cheong, M. Ryu, C. W. Byun, J. I. Lee, and H. Y. Chu, Light Effect on the Bias Stability of Transparent ZnO Thin Film Transistors, ETRI J. 31 [1] (2009). 24. P. T. Liu, Y. T. Chou, and L. F. Teng, Environment- Dependent Metastability of Passivation-free Indium Zinc Oxide Thin Film Transistor After Gate Bias Stress, Appl. Phys. Lett., 95 [23] (2009). 25. S. Yang, D. H. Cho, M. K. Ryu, S. H. K. Park, C. S. Hwang, J. Jang, and J. K. Jeong, Improvement in the Photon-induced Bias Stability of Al-Sn-Zn-In-O Thin Film Transistors by Adopting AlO x Passivation Layer, Appl. Phys. Lett., 96 [21] (2010). 26. R. B. M. Cross and M. M. De Souza, Investigation the Stability of Zinc Oxide Thin Film Transistors, Appl. Phys. Lett., 89 [26] (2006). 27. M. D. H. Chowdhury, P. Migliorato, and J. Jang, Light Induced Instabilities in Amorphous Indiumgallium-zinc-oxide Thin-film Transistors, Appl. Phys. Lett., 97 [17] (2010). 28. J. C. Park, S. E. Ahn, and H. N. Lee, High- Performance Low-Cost Back-Channel-Etch Amorphous Gallium-Indium-Zinc Oxide Thin-Film Transistors by Curing and Passivation of the Damaged Back Channel, ACS Appl. Mater. Inetr., 5 [23] (2013). 29. J. Y. Kwon, K. S. Son, J. S. Jung, K. H. Lee, J. S. Park, T. S. Kim, K. H. Ji, R. Choi, J. K. Jeong, B. Koo, and S. Lee, The Impact of Device Configuration on the Photon-Enhanced Negative Bias Thermal Instability of GaInZnO Thin Film Transistors, Electrochem. Solid. St., 13 [6] H213 (2010). 30. S. I. Kim, S. W. Kim, C. J. Kim, and J. S. Park, The Impact of Passivation Layers on the Negative Bias Temperature Illumination Instability of Ha-In-Zn-O TFT, Electrochem. Solid. St., 158 [2] H115 (2011). 31. K. H. Lee, J. S. Jung, K. S. Son, J. S. Park, T. S. Kim, R. Choi, J. K Jeong, J. Y. Kwon, B. Koo, and S. Lee, The Effect of Moisture on the Photon-enhanced Negative Bias Thermal Instability in Ga-In-Zn-O Thin Film Transistors, Appl. Phys. Lett., 95 [23] (2009). 37

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LCD , PC, TV 100, LG 50%. (CRT) 2000 (LCD) (PDP) LCD PDP LCD 70%. LCD (TFT), 3. 2010 (OLED) LCD. 8, TFT. TFT 0.5 cm 2 /Vs,. 1990. (low temperature poly silicon, LTPS) 80 cm 2 /Vs IC. LPTS /, TFT. 2004 InGaZnO