/ KEIT PD / KEIT PD / SUMMARY,, 13 300, 15 341, 17 367 5.2% 13 6,000 2%, 90%,,,,,,, ㆍ ㆍ,,,
KEIT PD Issue Report PD ISSUE REPORT OCTOBER 2015 VOL 15-10 1. (AC DC, DC AC), (, ),, MOSFET, IGBT(Insulated Gate Bipolar Transistor), BJT(Bipolar Junction Transistor), Thyristor - MOSFET IGBT BJT, Thyristor - (Device), (IC) (Module),,,,,, (HEV) (EV), ( ) -, *, IGBT 180 1 14
ISSUE 1,, WBG(Wide Band Gap) - SiC(Silicon Carbide), GaN(Gallium Nitride), - (HEV) (EV) - SiC 900V 3 PV, HEV EV, GaN SiC,, HEV EV, 2 GaN, Silicon SiC - SiC - GaN 6/8 Si, EMI, IC Korea Evaluation Institute of Industrial Technology 15
KEIT PD Issue Report PD ISSUE REPORT OCTOBER 2015 VOL 15-10 Wafer PKG/Module Application Power Device Power IC - Si : bulk wafer epi wafer - WBG : GaN, SiC - - Si : Superjunction, PN jnuction - WBG : Normally off, Gate Formation -, IC - Si : Thinning, Trench(Device) BCD(IC) - WBG :, - (Trench, Thinning ) - Si : PKG, Module - WBG : PKG, Module - PKG, - - ( ) Fuji Electric, HITACHI, ABB, Mitsubishi, Toshiba Infineon, Fairchild, International Rectifier, STMicro, Vishay Power Integration Richtek Technology, Monolithic Power Systems, Volterra Electro Vipryamitel, Danfoss LSPST, IXYS, Vincotech, POWEREX, SEMIKRON Schneider, YASAKAWA, SIEMENS, LS, Ingeteam Fairchild, KEC, Magnachips, AUK Maple,, KERI, Maple,, LG, ETRI, KETI, LG,,,,, KOPTI LG, SKC, SK Innovation,,, TrinnoTech, Powercubesemi, Semihow, Power Device,,,,,, LG, MAPS, ia, ETRI Fairchild, Magnachips SK,,,, SP, AMKOR, DS, LSPST,,, KETI LS, LG,,,, LG SiC IC Si PKG/Module GaN 3 16 한국산업기술평가관리원
ISSUE 1 파워반도체산업현황분석및투자방향 Wafer,,, /,, / - Application -, /, / Application - Application, / KEC, SK, ASML, AMAT 2. 13 300, 15 341, 17 367 5.2% 4 * : isuppli (2013, : ) Korea Evaluation Institute of Industrial Technology 17
KEIT PD Issue Report PD ISSUE REPORT OCTOBER 2015 VOL 15-10 Safety and Control(11.1%), Power Train(10.6%), Medical Electronics(6.5%), Energy Generation & Distribution(5.7%), Building & Home Control(7.3%), Automation(7.1%), Mobile Infrastructure(15.1%) Voltage Regulators, PMIC IC 53%, MOSFET, IGBT 38% - IC 13 160 17 197 5.3% - 13 113 17 141 5.7% - 13 35 17 45 6.7% - 13 10% 20 2.5 - SiC GaN,,, 5 Positioning * : Yole (2014) - WBG IT, 2013 1 2020 30 60% 2020 18% 18 한국산업기술평가관리원
ISSUE 1 파워반도체산업현황분석및투자방향 6 SiC, GaN * : Yole (2012, 2014) 900 800 700 10 years long-term market forecast for SiC devices in various power applications (EV/HEV nominal scenario) Korea Evaluation Institute of Industrial Technology R&D / High T / Others Ships & Vessels Smart Grid Power Source: Yole Developpement (2014) 19
KEIT PD Issue Report PD ISSUE REPORT OCTOBER 2015 VOL 15-10 SiC, - CREE, Rohm 650V 1700V SiC MOSFET, - SiC MOSFET Planar DMOSFET, Trench - SiC MOSFET -, CREE, IBS -,, Size (2013 sales) 7 SiC Business Model * : Yole (2014) - 5% all-sic Large Source: Yole Developpement (2014) $5M 20 Medium
ISSUE 1 파워반도체산업현황분석및투자방향 GaN -, -, - EPC 200V GaN Trans phorm 600/1200V - GaN RF IT, / 600V Level shifter, 1200V Magnetic Coupling Capacitive Coupling Type Gate Driver Level Shifter Opto-Coupler Magnetic Coupling Capacitive Coupling Block Diagram - NO Galvanic isolation - Finite Turn-on Time - HV Umitation - Galvanic isolation - LED - Finite Life Time - Special Package - Limited Speed International Rectifier Fairchild, Avago - Galvanic isolation - Possible High Voltage isolation - Polyimide isolation Infineon, Analog Devices 8 - Galvanic isolation - Stable SiO2 isolation - Parasitic Coupling HV Level Shifter Optocoupler Transformer Capacitive Coupling Level Shifter Tx Tx Rx Rx Tx Tx Rx Texas Instrument Rx - WBG - SiC, GaN NMOS Passive, SOI 600V, 200 WBG Korea Evaluation Institute of Industrial Technology 21
KEIT PD Issue Report PD ISSUE REPORT OCTOBER 2015 VOL 15-10 - IPM, 3. 300mm (CoolMOS) SiC GaN CREE 600V SiC SBD 1200V/1700V SBD 1200V SiC DMOSFET BJT MOSFET SiC, GPT 1700V SiC SBD MOSFET, IGBT SiC GaN /,,, RF, 9 1 OptiMOS 300mm (CoolMOS) SiC GaN CREE SiC, SiC 1 SiC IGBT 6 SiC SiC MOSFET 900V, 1200V 1700V line-up GaN 22 한국산업기술평가관리원
ISSUE 1 파워반도체산업현황분석및투자방향 ST IR () NXP 1,, (PowerWise) 2011 TI,, PMIC AP PMIC Rectifier, FRD Power MOSFET, IGBT IT,,,, MOSFET, IGBT ㆍ IC,, 2004 10,,, 2 IGBT, MOSFET 2008 2009 3 2m ohm 30V 2012 2012 3 'MDmesh PlusTM Low Qg' MOSFET 100V 95% AG IC DC-DC, AC-DC PMIC 90% BiCDMOS 2009 2 N- N- MOSFET 2013-2008 10 150mm GaN-on-Si GaN, 1 2007 /, 2012 RF 2010 5 (IPM) Korea Evaluation Institute of Industrial Technology 23
KEIT PD Issue Report PD ISSUE REPORT OCTOBER 2015 VOL 15-10 /, PMIC, 2011 3 MOSFET 2011 30% 2012 9 2011 6, 100V, MOSFET * : ETRI (2015.6), / IC ( 100V) LG, SiC, LG 2016 SiC - SiC, SiC SOI 650V ㆍ / LS 2005 2009 3 2012 2000 2010 2 LC kw IGBT,,, LED, 24 한국산업기술평가관리원
ISSUE 1 파워반도체산업현황분석및투자방향 LG SK 2006 90nm 2009 2,, MOSFET 2011 SiC SiC SBD MOSFET IGBT 2011 WBG,, ICT PC 2010 M8 CIS, DDI, PMIC 1999 LCD,, 2007 6 1 4 PMIC,, IC, MOS IGBT, LSI 300mm S 45nm FPGA, 2012 CPU' 2013 5 PMIC ~900V Si MOSFET 1700V SiC SBD SiC ~900V Si MOSFET 400V~1350V Si IGBT, (MOCVD) 12(300mm), DDI, 2006 PMIC 2013 2 LED IC 2 BMIC PMIC DC/DC 60V PMIC 0.35um, MOSFET, BJT, IC, IGBT 2011 kw IGBT 2012 11 600V (IGBT) * : ETRI (2015.6) Korea Evaluation Institute of Industrial Technology 25
KEIT PD Issue Report PD ISSUE REPORT OCTOBER 2015 VOL 15-10 4. SWOT () 13 6,000 2%, LG KEC, MOSFET 1,000, (IGBT, Thyristor ) IC 1,000,,, 90% WBG ( ),,,, KEC, SiC GaN - KEC, / MOSFET Si () () 500 1 50% 50, PMIC IC () 69.2%, 1.6 (100%) (93.1%) (92%) (69.2%) (55.4%),, 26 한국산업기술평가관리원
ISSUE 1 파워반도체산업현황분석및투자방향 * : (2013) SiC 70~80% GaN 09 200V GaN-on-Si 13 600V, SWOT, LG, supply-chain - WBG - R&D Strength,, LG, Global Opportunity, (6~8) Weakness - - WBG Threat Infineon, Mitsubishi,, GaN timeto-market 5. SiC/GaN FET - SiC 650V/900V 1200V (30A)-(50A ) 4500V Korea Evaluation Institute of Industrial Technology 27
KEIT PD Issue Report PD ISSUE REPORT OCTOBER 2015 VOL 15-10 - GaN 900V on-resistance Super-junction IGBT - 600V IGBT Super-junction Concept trade-off, 1200V/1700V IGBT MOSFET - Shielded Trench Gate MOSFET, 200V Super Junction Power MOSFET Application Smart FET IPM - SiC GaN High Temperature Device Package Material, Power Cycle, Latest chip power IC IoT/ smart power IC - IC, IoT, - SiC,, SiC,,,,,,,,,, () 1.,,, KEIT PD Issue Report, 14-7, 2014. 07 2. R&BD - [ /] -, (2015) 3. ( ), (2015) 28 한국산업기술평가관리원