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1 Jurnal f the Krean Ceramic Sciety Vl. 44, N. 11, pp. 645~649, 007. Structural and Electrical Prperties f La 0.7 Film n SiO /Si Substrate by RF Magnetrn Sputtering at Lw Temperature Sun Gyu Chi, A. Sivasankar Reddy, Tae-Jung Ha, Byung-Gn Yu*, and Hyung-H Park Schl f Advanced Materials Science and Engineering, Ynsei University, Seul Krea *Electrnics and Telecmmunicatins Research Institute, Daejen Krea (Received Octber 4, 007; Accepted Nvember 6, 007) RF rl w SiO /Si»q La 0.7» p ³ÁA. Sivasankar ReddyÁwk Á š*á xy w œw *w m ( ; ) ABSTRACT The La 0.7 was depsited n SiO /Si substrate by RF magnetrn sputtering. The xygen gas flw rate was changed frm 0 t 80 sccm and the substrate temperature was 350 C. The xygen gas flw rate was changed t cntrl the grwth rientatin and crystalline state f the film. Relatively high TCR (temperature cefficient f resistance) value (.33%/K) was btained when cmparing with the reprted values f the films prepared by using high substrate anneal temperature. The decrease in the sheet resistance and TCR value were bserved when grain size f the film increased with the increase f xygen gas flw rate. Key wrds : Blmeter, CMR, LSMO, SiO, TCR 1. l(blmeter) y l w y w,, š. 1,) y w y ùkü t TCR(temperature cefficient f resistance) TCR w w l w k. l w x Si:H, VO x, SiGe š ù VO x œ ù ƒ ¾ x y ƒ š œ. w Si:H 3) % TCR CMOS» ù p. 4) w w, TCR ƒ p Crrespnding authr : Hyung-H Park Tel : Fax : w v w, w» w (CMR:clssal magnetresistance) p r e p y ƒ š. 5-7) r e p y A 1-x B x (A=La, Nd, Pr 3ƒ m, B=Ba, Ca, Sr ƒ e m ) ƒ j» w y. w pervskitex y ùkù» w z» d» wz w j y ùkü» w z.» w» ƒ - 10% w w w ƒ w w p w ƒ w ƒ w. 8-11) w r e p y t La 0.7» La 0.7 l w» w LaAlO 3, SrTiO 3»q v wš, PLD(pulsed laser depsitin) yƒ 700 C»q 645

2 646 ³ÁA. Sivasankar ReddyÁwk Á šá xy z œ v w. ù 1-14) w œ 500 C w CMOS œ La 0.7 CMOS œ m w l w û œ Si, SiO»q ƒ w œ v w.»q» w û 350 C w, SiO /Si»q yƒ ƒ w sputter w» w p La 0.7 ( w LSMO) w. w ü ƒ y g p y w.. x LSMO k½ 99.99% La O 3 (Sigma Aldrich), SrCO 3 (Sigma Aldrich), Mn O 3 (Cerac) q w w. k½ yw ƒƒ q e wš k wì g w 4 w. z 150 C ƒ p w k j š e k½ w» š w 100 C w. q ƒ z ³» w» w. w e q w k z e w 700 Kg/cm ƒw k½ xw. z 100 C 4 w LSMO rl k½ w. rl œ l rv w 6 10 trr k 6 w. ü ƒ» š Ar ƒ O ƒ w š mass flw cntrller (FC-60) w ƒ w. SiO /Si(001)»q m DI water q» w ƒ 5 w t» w. rl k½ v y 50 mm w 5rpm y z g ³ w w. rl»q 350 C, RFq 150 W š wš Ar ƒ 100 sccm š w w. O ƒ 0, 0, 40, 60, 80 sccm y j w. LSMO Rigaku diffractmeter w X- z (XRD:X-ray diffractin) w. w t x (SEM :scanning electrn micrscpy;jeol, JSM-6330F) w w. Ì q l w d w š 4 pint prbe w d w w d w Fig. 1. XRD spectrum f LSMO target: It shws that LSMO target is plycrystalline.. LSMO w e w 19~35 C C ƒ j HP4145 analyzer w - d w w. w ƒ w y w TCR w. 3. š Fig. 1 š mw LSMO k½ XRD. k½ (100), (110), (111), (00), (), (11), (0), (300), (33) w z plycrystalline k y.» LSMO XRD (110) ƒ ƒ ùkù k½ ƒ w ƒ w ùkû. Fig. RF pwer 150 W š w ƒ (xygen gas flw rate) 0, 0, 40, 60, 80 sccm y j ƒ yƒ LSMO SiO /Si»q w e w w. LSMO(100) (00) ƒƒ θ=.8 θ= (110) θ=33 ù peak w ƒ û. RF rl mw» PLD w (110) ƒ w ùkù (100) (00) ƒ w ùkû.»q SiO /Si(001)» LSMO LaAlO 3ù SrTiO 3»q»q»»q ƒ ù. l w 15) LSMO LaAlO 3ù SrTiO 3»q w wz

3 RF rl w SiO /Si»q La 0.7» p 647 Fig. 4. Sheet resistance f LSMO films as a functin f xygen gas flw rate at 150 W RF pwer. Fig.. XRD patterns f LMSO films depsited n SiO /Si by 150 W RF pwer at different xygen gas flw rates. Fig. 3. X-ray diffractin intensity rati f LSMO(110)/Si(400) and LSMO(00)/Si(400) with varius xygen gas flw rate. ƒ w w mw SiO /Si(001)»q k LSMO ƒ w. Fig. 3 LSMO ƒ w y w» w LSMO(110) (00) X- z» Si(400) z» w. ƒ LSMO(110) Si(400) ƒ ƒ 0sccm ƒw w ƒ 40 sccm» ƒw. w LSMO(00) ƒ ƒ ƒw LSMO(00) Si(400) ƒw, 40 sccm w ƒ (110) (00) w ƒ ƒƒ ùkùš 40 sccm (00) w sy 40 sccm ƒ». Fig. 4 ƒ w d. w d w w w w» w 1mA 10 ma d w. d 1mA 5~60 kω/ý w d š 10 ma 5~30 kω/ý w w w d. 1 ma 10 ma, ƒ ƒ ƒw w w w ùkü. Fig. y w ü ƒ ƒ w w û q. w ƒ w ys 1mA d w 10 ma d w j. ƒ ƒ 40 sccm w w w w k w w l w w» w 40 sccm ƒ w w. Fig W ƒ SEM, RF rl mw 44«11y(007)

4 최선규 A. Sivasankar Reddy 하태정 유병곤 박형호 648 Fig. 5. SEM images f LSMO films at different xygen gas flw rates; (a) 0 sccm, (b) 40 sccm, and (c) 80 sccm at 150 W RF pwer. 정 상태로 증착된 LSMO 박막의 경우 산소가스유량비가 증가함에 따라서 입자의 크기가 점점 증가하는 경향을 나 타냄을 알 수 있다. 이는 이전에 LSMO 박막의 면저항이 산소가스유량비의 증가에 따라 감소했던 결과와도 일치 하는 것으로서, 산소가스유량비가 증가할수록 증착 되는 박막의 입자크기가 커지게 되며 이에 따라 전자의 이동 시 산란영역인 입계가 점점 감소하게 되어 박막의 면저 항 값이 감소하게 되는 것이다. Fig. 6은 RF pwer가 150 W일 때 산소가스유량비를 0 sccm으로 고정한 뒤 증착한 LSMO 박막의 온도 변화에 따른 저항 값의 변화이다. SiO /Si 기판 위에 증착 된 LSMO 박막은 온도가 증가함에 따라 저항 값이 감소하는 경향을 보인다. 단결정 산화물 기판 위에서 성장한 정합 성장 LSMO 박막의 경우 금속-반도체 상전이온도가 350 K 부근에서 나타나지만 비정질 SiO /Si 기판 위에서 성장한 다결정 LSMO 박막의 경우는 상전이온도가 00 K 부근 에서 나타난다. LSMO 박막은 상전이온도보다 낮은 온 도에서는 금속 거동을 나타내어 온도가 증가할수록 저항 이 증가하는 반면, 박막의 온도가 상전이온도보다 높을 경우는 반도체 거동을 나타내어 온도가 증가할수록 저항 16) 15) Fig. 6. Resistance variatin f LSMO film which was prepared at 150 W RF pwer as increasing temperature. 한국세라믹학회지 이 감소하는 경향을 나타낸다. 본 연구에서 SiO /Si 기판 위에 증착한 LSMO 박막의 경우 K 영역은 상전이 온도보다 높은 온도 영역이므로 반도체 거동을 나타내게 되어 온도가 증가할수록 저항이 감소하는 경향을 나타낸 다. Fig. 7은 SiO /Si 기판 위에 증착된 LSMO 박막의 TCR 값이다. TCR 값은 300 K에서의 LSMO 박막의 저항 값을 기준으로 계산하였으며, 다음과 같은 식에 의하여 TCR 값을 구하였다. TCR=(1/R)(dR/dT), (1) T는 박막의 온도이고, R는 각 온도에서 측정된 박막의 저항값이다. 증착 조건을 0, 0, 40, 60, 80 sccm으로 산소가스유량비 를 조절하였을 경우 얻어 지는 박막의 TCR 값은 약.10 ~.33%/K 사이의 값으로 나타났다. 이는 기존의 PLD 및 고온 열처리를 통하여 얻어진 LSMO/SiO /Si 박막과 비교하였을 경우, 낮은 공정 온도임에도 불구하고 동일하 거나 또는 몇몇 산소가스유량비 조건에서는 보다 월등한 TCR 값을 나타내는 결과이다. 따라서 RF 스퍼터링을 이용하여 산소가스유량비를 조절하면서 SiO /Si 기판 위 17) Fig. 7. TCR values f LSMO films as a functin f xygen gas flw rate at 150 W RF pwer.

5 RF rl w SiO /Si»q La 0.7» p 649 LSMO w» CMOS œ w»q ƒ ƒ 350 C œ ƒ wš, w TCR w ùký y w. 4. CMOS œ ƒ w l w LSMO w» w SiO /Si»q ƒ w rl LSMO wš p sƒw. RF rl w SiO /Si»q LSMO (110) (00) w y w, ƒ ƒ ƒw w š 40 sccm¾ (00) w XRD mw. w ƒ ƒ ƒw w 1mA d w, 5~60 kω/ý ùkü. SEM mw ƒ j»ƒ f š w w w. SiO /Si»q LSMO ƒ w w w, TCR.3%/K ùkü. l»q ƒ 350 C r l w LSMO CMOS œ w l w w ùký. Acknwledgement m m IT w» y ww. [006- S054-01, il CMOS» MEMS w» ]. 007 w 1 w. REFERENCES 1. A. Rgalski, Infrared Detectrs: Status and Trends, Prg. Quantum Electrn., (003).. P. W. Kruse and D. D. Skatrud, Mnlithic Silicn Micrblmeter Arrays ; pp in Uncled Infrared Imaging Arrays and Systems, Vl. 47, Semicnductrs and Semimetals. Ed. by R. K. Willardsn, and E. R. Weber, Academic Press, San Dieg, H. K. Kang, Y. H. Han, H. J. Shin, S. Mn, and T. H. Kim, Enhanced Infrared Detectin Characteristics f VO x Films Prepared using Alternating V O 5 and V Layers, J. Vac. Sci. Technl. B, 1 [3] (003). 4. A. H. Z. Ahmed and R. N. Taita, Characterizatin f Amrphus Ge x Si 1-x O y fr Micrmachined Uncled Blmeter Applicatins, J. Appl. Phys., 94 [8] (003). 5. A. Gyal, M. Rajeswari, R. Shreekala, S. E. Lfland, S. M. Bhagat, T. Bettcher, C. Kwn, R. Ramesh, and T. Venkatesana, Material Characteristics f Pervskite Manganese Oxide thin Films fr Blmetric Applicatins, Appl. Phys. Lett., 71 [17] (1997). 6. J.-H. Kim and A. M. Grishina, Free-standing Epitaxial La 1Tx(Sr,Ca) x Membrane n Si fr Uncled Infrared Micrblmeter, Appl. Phys. Lett., 87 [3] (005). 7. M. A. Tdd, P. P. Dnhue, P. J. Wright, M. J. Crsbie, P. A. Lane, M.-H. J, B. S. H. Pang, and M. G. Blamire, Clssal Magnetresistive Manganite thin-films fr Infrared Detectin and Imaging, Ann. Phys., 13 [1-] (004). 8. R. J. Chudhary, A. S. Ogale, S. R. Shinde, S. Hullavarad, S.B. Ogale, T. Venkatesan, R. N. Bathe, S. I. Patil, and R. Kumar, Evaluatin f Manganite Films n Silicn fr Uncled Blmetric Applicatins, Appl. Phys. Lett., 84 [19] (004). 9. M. Rajeswari, C. H. Chen, A. Gyal, C. Kwn, M. C. Rbsn, R. Ramesh, T. Venkatesan, and S. Lakeu, Lw-frequency Optical Respnse in Epitaxial thin Films f La 0.67 Ca 0.33 Exhibiting Clssal Magnetresistance, Appl. Phys. Lett., 68 [5] (1996). 10. A. C. C, S. J. Xia, and V. I. Birss, A Kinetic Study f the Oxygen Reductin Reactin at LaSr -YSZ Cmpsite Electrdes, J. Electrchem. Sc., 15 [3] A (005). 11. S. Mukhpadhyay, I. Das, S. P. Pai, and P. Rayachaudhuri, Anmalus Bias Dependence f Tunnel Magnetresistance in a Magnetic Tunnel Junctin, Appl. Phys. Lett., (005). 1. F. Yang, L. Mechin, J. M. Ruture, B. Guillet, and R. A. Chakalv, Lw-nise La 0.7 Thermmeters fr Uncled Blmetric Applicatins, J. Appl. Phys., (006). 13. V. Bhsle and J. Narayan, Epitaxial Grwth and Magnetic Prperties f La 0.7 Films n (0001) Sapphire, Appl. Phys. Lett., (007). 14. M. Sltani, M. Chaker, X. X. Jiang, D. Nikanpur, and J. Margt, Thermchrmic La 1TxSr x (x = 0.1, 0.175, and 0.3) Smart Catings Grwn by Reactive Pulsed Laser Depsitin, J. Vac. Sci. Technl. A, 4 [4] (006). 15. S. Y. Yang, W. L. Kuang, Y. Liu, W. S. Tse, S. F. Lee, and Y. D. Ya, Grwth and Characterizatin f La 0.7 Films n Varius Substrates, J. Magn. Magn. Mater., (004). 16. D. Y. Kim, M. Gwtham, M. S. Shim, and J. Yi, Ply- Crystalline Silicn thin Film Made by Metal-induced Crystallizatin, Mater. Sci. Semicnd. Prcess, (004). 17. A. Lisauskas, S. I. Khartsev, and A. Grishin, Tailring the Clssal Magnetresistivity : La 0.7 (Pb ) 0.3 thin- Film Uncled Blmeter, Appl. Phys. Lett., 77 [5] (000). 44«11y(007)

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