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1 Jurnal f the Krean Ceramic Sciety Vl. 45, N. 4, pp. 245~249, Prperties f Chemical Vapr Depsited ZrC Cating Layer using by Zircnium Spnge Materials Jun Gyu Kim,Y Yul Chi, Yung W Lee*, Ji Yen Park*, and D Jin Chi Department f Advanced Material Science and Engineering, Ynsei University, Seul , Krea *Nuclear Materials Technlgy and Develpment, Krea Atmic Energy Research Institute, Daejn , Krea (Received April 17, 2008; Accepted April 21, 2008) g s w yw ky g gqd ½ ³Á Á *Á *Á w œw *w q ( ; ) ABSTRACT The SiC and ZrC are critical and essential materials in TRISO cated fuel particles since they act as prtective layers against diffusin f metallic and gaseus fissin prducts and prvides mechanical strength fr the fuel particle. Hwever, SiC and ZrC have critical disadvantage that SiC lses chemical integrity by thermal dissciatin at high temperature and mechanical prperties f ZrC are weaker than SiC. In rder t cmplement these prblems, we made new cmbinatins f the cating layers that the ZrC layers cmpsed f SiC. In this study, after Silicn carbide (SiC) were chemically vapr depsited n graphite substrate, Zircnium carbide (ZrC) were depsited n SiC/graphite substrate by using Zr reactin technlgy with Zr spnge materials. The different mrphlgies f sub-depsited SiC layers were crrelated with micrstructure, chemical cmpsitin and mechanical prperties f depsited ZrC films. Relatinships between depsitin pressure and micrstructure f depsited ZrC films were discussed. The depsited ZrC films n SiC f faceted structure with smaller grain size has better mechanical prperties than depsited ZrC n anther structure due t surface grwth trend and micrstructure f sub-depsited layer. key wrds : SiC, ZrC, Zr-spnge, Micrstructure, Mechanical prperty 1. w š ƒ (VHTR, Very High Temperature Reactr) v w (TRISO, Tri-ISOtrpic) w ƒ y w š. gq w w w v w» w w k (Buffer), ü š wk (IPyC), ky³ (SiC) š š w k (OPyC)d. v d ƒ w ky³ d ky³ û, w š w, ù ƒ š š š 1900 C ¾ j w» š w Crrespnding authr : D Jin Chi drchidj@ynsei.ac.kr Tel : Fax : y w» v w w w. w 1900 C š ky³ ƒ j w w» š y ƒ š wš ky³ (3440 C) ƒ š yw w ky g d w ƒ w š. ù ky g w ky³» p w ƒ š. 1-5) w w w» w» ky³ v w ky³ d ky g d g d š w ky³ d yw, ky g» š ƒ w. w ky³ jš ky g w g s w d v w» wù Zr reactin 245
2 246 ½ ³Á Á Á Á technlgy w ky g ky g d,» p r. 2. x x ky g w» w š ƒ w ht wallx s w š Super Kanthal ƒ w. s ü utlet ƒ w š z» w 10 tilte susceptr w.» d ky³ d w» w k y³ q ƒ w š w š Si C w ƒ MTS(methyltrichlrsilane; CH 3 SiCl 3, Acrs Organics C., U.S.A) w. ky³ d 6) yw p 1200 C, 1300 C w w.( l 1200 C w (111) w x t xk ky³ R1, w (111) (220) ë t x ƒ y 1300 C ky³ F1 š w.) d v w» j ƒ zircnium tetrachlride(zrcl 4 ) xk y g j zircnium spnge w Zr reactin technlgy ù x ƒ œ yw w» w Zr reactin technlgy ky g w. 7,8) ky g zircnium spnge (Aldrich chemical C., USA) CH 4 ƒ w» Ar w» yw g» w» H 2 w. g s x w ƒ l y 600 C ƒ w z» CH 4 H 2 ù w. g s w ky g w» w œ w 1500 C» ƒ 3 ky g w w. k ky g» 1500 C, α=3 š wš r w r. ky g d w X z mw w SEM mw œ y ky g y w. w ky³ d ky g d sƒ w scratch test ww š ky g d k d Fig. 1. The cmparisn f XRD patterns f ZrC films depsited n sub-depsited layers with different micrstructure and depsitin pressure. w» w Nan Indenter (Nantester, MicrMaterials, Wrexham, UK) w. 3. š Fig C» d SiC t x w 684 trr 50 trr w ky g X z mw w. w w» d t x R1 F1 r ky g (111), (200), (220), (311) z (JCPDS# ) w ky³ z (JCPDS# ).» d ky³ runded tp t ƒ (111) w š facted t ƒ (220) w ƒ g s w ky g ky³ d t x (111) ww. ƒ j w wù y ƒ wš gas flw rate mixing ratiƒ w» d t x wš w w yƒ. 9) ky g gqd» w SEM w Fig. 2 ùkü. R1 ky g t x» d w x F1 w ky g» d w ƒ wš. r» d t x w» d ƒ y w. ky w wz
3 지르코늄 스폰지를 원료로 사용하여 화학증착법으로 제조된 탄화지르코늄 코팅층의 물성 247 고 R1 위에 증착한 시편은 평균 10 µm 정도의 두께로 막 이 증착 되었으며 F1 위에 증착한 시편도 평균 9.2 µm 두 께로 거의 유사한 두께으로 증착된 것을 확인하였다. 증 착된 막의 두께가 차이가 나는 것은 기저층의 표면 조도의 차이로 여겨 지며 (220) 우선배향성을 가지는 F1의 표면 조 도가 (111) 우선배향성을 가지는 R1의 표면 조도 보다 커 서 R1보다는 조금 얇게 증착이 되었다고 여겨 진다. 증 착된 막의 두께는 약간 차이가 있지만 증착된 막의 형태 는 두 경우 모두 얇은 판상형으로 증착되었음을 관찰할 수 있었다. Fig. 3(c)는 R1 위에 증착압력을 달리하여 증 착한 탄화지르코늄의 파단면을 나타내는 것으로써 증착 압력 684 trr에서는 판상형으로 증착되는 반면 50 trr의 낮은 압력에서 증착된 ZrC는 일반적인 박막형태로 증착 되어졌다. 증착된 탄화지르코늄의 파단면을 관찰한 결과 pyrcarbn의 미세구조와 유사한 얇은 판상형으로 증착이 되어 카본의 함량이 지르코늄보다 많을 것으로 생각이 되 었으며 이를 좀더 자세히 분석하기 위해 EDS를 통해 조 성을 분석하였으며 이를 Fig. 4에 나타내었다. 조성 분석 결과 R1 위에 증착된 탄화지르코늄이 F1 위에서 증착된 경우보다 지르코늄의 함량이 높게 나타났지만 두 시편 모 두 대체적으로 지르코늄의 함량보다 카본의 함량이 많았 다. 이는 X선 회절 분석 시 카본의 회절선이 강하게 나 타나고 증착된 탄화지르코늄이 laminar pyrcarbn형태로 증착 된 원인이라고 생각 되어진다. 증착압력을 50 trr로 증착한 탄화지르코늄 시편이 684 trr에서 증착한 시편보 다 비교적 정량화학적으로 나타났다. 증착압력에 따라 막 의 조성과 형태가 다른 것은 반응로 안에서 반응성이 큰 10) Fig. 2. Fig. 3. SEM images f surface mrphlgy f ZrC layer which depsited with different depsitin cnditins. (a) R1 (a ) ZrC film depsited n R1 (b) F1 (b ) ZrC film depsited n F1 SEM images f fractured crss sectin n ZrC layer which depsited with different depsitin cnditins. (a) ZrC film depsited n R1 (b) ZrC film depsited n F1 (c) ZrC film depsited n R1 at 50 trr 르코늄의 파단면을 관찰한 결과(Fig. 3) 기저층의 각각의 표면 형태를 따라 탄화지르코늄이 안정적으로 증착 되었 Fig. 4. EDS results fr elemental weight percents f each ZrC films. 제 45 권 제 4호(2008)
4 김준규 최유열 이영우 박지연 최두진 248 Fig. 6. Fig. 5. (a) Scratch test images f ZrC film depsited n R1, (b) shws the critical lad f ZrC film depsited n R1. 수소가 반응에 관여하는 시간의 차이로 증착압력이 낮을 수록 카본소스를 C-H의 형태로 결합하여 반응로에서 빠 져나가는 시간이 상대적으로 고압력일때보다 느려서 지 르코늄과 카본의 합성이 안정적이고 정량화학적으로 탄 화지르코늄이 증착된 것으로 생각 되어진다. 증착된 탄화지르코늄 박막과 탄화규소와의 계면 접착 력 평가를 위해 scratch test를 시행하였다. Fig. 5는 R1 위 에 증착한 탄화지르코늄 박막의 scratch channel의 모습을 광학 현미경으로 관찰한 것이다. 연질 재료에 대해서는 하중이 점차로 가해질 때, 파괴기구(failure mde)가 adhesive failure가 되면서 scratch channel 내외부에 물결무늬가 나타나게 되거나 기저층의 표면이 들어나게 되는데 본 실 험에서는 기저층의 표면이 나타나는 시점을 임계하중으 로 보았다. 그 결과 탄화지르코늄의 박막은 약 8 N의 임계하중을 가짐을 알 수 있었다. F1과 증착압력을 달리 11) 한국세라믹학회지 Hardness and Elastic mdulus f ZrC films depsited n the SiC/graphite substrate which have difference surface mrphlgy. 한 시편에서도 평균 7~8 N의 임계하중을 보였다. 임계하 중은 박막의 두께, 강도, 내부응력 및 기판의 강도 등과 같은 여러 변수들의 영향을 받는데 기저층의 표면 형상 과 상관없이 증착된 탄화지르코늄 박막 접착력의 임계하 중이 비슷하게 나온 것은 기저층의 강도와 증착된 탄화 지르코늄의 조성과 두께가 유사한 것이 그 원인으로 여 겨진다. 증착된 탄화지르코늄의 경도와 탄성률을 측정하기 위 해 인덴터는 Berkvich 인덴터를 사용하였으며, 인덴테이 션 로드는 10~100 mn으로 하였다. 이 때의 침투 깊이는 최대 600 nm로 나타났으며, ZrC 코팅 층의 높이가 약 10 µm이므로 침투 깊이가 높이의 1/10 보다 작아 기판의 영향은 거의 없다고 가정하였다. 탄화지르코늄 코팅층의 표면을 다이아몬드 페이스트를 이용하여 폴리싱하여 경도 와 탄성률을 측정하였으며 결과는 Fig. 6에 나타내었다. 문 헌에 따르면 탄화지르코늄의 경도와 탄성률은 25 GPa와 400 Gpa로 보고 되어지는데 본 실험의 경우 R1 위에 증 착한 탄화지르코늄 코팅층의 경도는 약 GPa, 탄성 률은 GPa로 측정되었으며, F1 위에 증착된 탄화지 르코늄 코팅층의 경도는 약 39.8 GPa, 탄성률은 GPa 로 측정되었다. 문헌조사에 값과 비교해 볼 때, 경도 값 은 높은 값을 가지는 것으로 나타나지만 탄성률은 낮은 값을 가지는 것을 알 수 있었다. 이는 증착된 기판의 영향과 증착된 탄화지르코늄의 조성차 때문이라 생각 되 어지며 두 시편의 기계적 특성을 비교 하였을때는 F1 위 에 증착한 탄화지르코늄층의 경도와 탄성률이 더 높은 것 으로 나타났다. 이 결과는 탄화규소 증착시 F1이 R1보다 증착온도가 높아 좀더 치밀하고 미세한 표면 형상을 가 지게 되고 F1에서 증착한 탄화지르코늄이 입자의 크기가 더 작기 때문이라고 볼 수 있다. 12) 13)
5 g s w yw ky g gqd v w ƒ w ky³ d ky g d w» w p ù ky³ d yw ky³ d y w ky g d w d w» d ky³ œ ƒ ky gd p e w w š š w. ky³ ƒ 1200 C 1300 C w w ky g w sx k zircnium spnge w Zr reactin technlgy w 1500 C,» 3 w. ky g (111) w ƒ š j»» d t x» d t ƒ z d w y. ky g Zr/C g e w ù. w pyrcarbn w q x û e x ùkü xk. ky g ky³ sƒ s³ 8N w ƒ» d w e wš ƒ ƒ ky³» d ky g k ƒ. m g s w ky³ ky g w 1300 C w k y³» d» 3, 1500 C y g w ƒ» ƒ d v w. Acknwledgement w REFERENCE 1. H. Nickel, H. Nabielek, G. Ptt, and A.W. Mehner, Lng Time Experience with the Develpment f HTR Fuel Elements in Germany, Nucl. Eng. Des., (2002). 2. S. Kuadri-Mstefa, P. Serp, M. Hemati, and B. Caussat, Silicn Chemical Vapr Depsitin (CVD) n Micrprus Pwders in a Fluidized Bed, Pwder Technl., (2001). 3. Gregry K. Miller, David A. Petti, Dminic J. Varacalle Jr., and Jhn T. Maki, Statistical Apprach and Benchmarking fr Mdeling f Multi-dimensinal Behavir in TRISOcated Fuel Particles, J. Nucl. Mater., (2003). 4. C. M. Hllabaugh, R. D. Reiswig, P. Wagner, L. A. Wahman, and R. W. White, A New Methd fr Cating Micrspheres with Zircnium Carbide and Zircnium Carbidecarbn Graded Cats, J. Nucl. Mater., (1975). 5. K. Minat, K. Fukuda, H. Seik, A. Ishikawa, and E. Oeda, Deteriratin f ZrC-cated Fuel Particle Caused by Failure f Pyrlytic Carbnlayer, J. Nucl. Mater., (1998). 6. J. G. Kim, E-Sul Kum, D. J. Chi, S. S. Kim, H. L. Lee, Y. W. Lee, and J. Y. Park, A Study n the CVD Depsitin fr SiC-TRISO Cated Fuel Material Fabricatin, J. Kr. Ceram. Sc., 44 [3] (2007). 7. K. Ikawa and K. Iwamt, Cating Micrspheres with Zircnium Carbide, J. Nucl. Mater., (1972). 8. K. Ikawa and K. Iwamt, Cating Micrspheres with Zircnium Carbide-carbnally, J. Nucl. Mater., (1974). 9. H. S. Kim and D. J. Chi, Effect f Diluent Gases n Grwth Behavir and Characteristics f Chemically Vapr Depsited Silicn Carbide films, J. Am. Ceram. Sc., 82 [2] (1999). 10. D. J. Kim and D. J. Chi, Micrhardness and Surface Rughness f Silicn Carbide by Chemical Vapur Depsitin, J. Mater. Sci. Lett., (1997). 11. J. Valli, A Review f Adhesin Test Methds fr Thin Hard Cating, J. Vac. Sci. Technl A, 4 [6] (1986). 12. Dayng Cheng, Shaqing Wang, and Hengqiang Ye, First- Principles Calculatins f the Elastic Prperties f ZrC and ZrN, J. Ally.Cm., (2004). 13. S. Mtjima, H. yagi, and N. Iwamri, Chemical Vapr Depsirin f SiC and Sme f Its Prperties, J. Mater. Sci. Lett., (1986). 45«4y(2008)
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