Microsoft PowerPoint - dev6_TCAD.ppt [호환 모드]

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1 TCAD: SUPREM, PISCES 김영석 충북대학교전자정보대학 k 전자정보대학김영석 1

2 TCAD TCAD(Technology Computer Aided Design, Technology CAD) Electronic design automation Process CAD Models process steps (diffusion, i I/I) => Simulates device structure (junction depth, doping profiles), e.g., SUPREM Device CAD Models devices based on fundamental physics (mobilities, doping profiles) => Simulates device behavior, e.g., PISCES Circuit it CAD Compact Modeling of the device (not based on fundamental physics) => Simulates circuit behavior, e.g., SPICE 전자정보대학김영석 2

3 TCAD From Wiki DFM: Design For Manufacturing, PSM: Phase Shift Masking CMP: Chemical Mechanical Planarization, STI: Shallow Trench Isolation 전자정보대학김영석 3

4 TCAD Work Flow 전자정보대학김영석 4

5 Process Simulation 전자정보대학김영석 5

6 Process Simulation Input - Grid Generation - Mask Definition - Structure Initialization - Process Step Spec. Models -Diffusion - Oxidation - Implantation ti - Deposition /masking /etching Output - Structure/Mesh - Doping profiles - Junction Depths 전자정보대학김영석 6

7 Process Simulators Process flow simulators are tools which simulate the full semiconductor manufacturing flow Process Simulators SUPREM3: 1-D, Standford Univ. SUPREM4: 2-D FEDSS: IBM PROPHET: AT&T DIOS: ISE (Swiss) TSUPREM4: commertial, based on SUPREM4 TAURUS-PROCESS ATHENA: commertial, based on SUPREM4 FLOOPS: U. of Florida Equipment Simulators ILLUM2D/3D: the Institute for Microelectronics at the Technical University of Vienna, lithography SPLAT/SAMPLE2D/3D, PROLITH, SOLID E, ACES 전자정보대학김영석 7

8 Summary of NMOS Process Flow 전자정보대학김영석 8

9 Layout TCAD Input Process Conditions Diffusion: Temp., Pressure, Time, Flow Rates Oxidation: Temp. Ramps, Gas Ramps Ion Implantation: Dose, Energy, Tilt, Revolving, Beam Div., Ionization Level 전자정보대학김영석 9

10 NMOS Process Simulations with TSUPREM4 Mesh Generation 전자정보대학김영석 10

11 Oxidation NMOS Process Simulations with TSUPREM4 전자정보대학김영석 11

12 NMOS Process Simulations with TSUPREM4 Nitride Deposition 전자정보대학김영석 12

13 NMOS Process Simulations with TSUPREM4 Nitride Etch 전자정보대학김영석 13

14 NMOS Process Simulations with TSUPREM4 Field Oxidation 전자정보대학김영석 14

15 NMOS Process Simulations with TSUPREM4 Nitride Remove 전자정보대학김영석 15

16 NMOS Process Simulations with TSUPREM4 Field Implant Profiles 전자정보대학김영석 16

17 NMOS Process Simulations with TSUPREM4 VTH Adjust Implant Profiles 전자정보대학김영석 17

18 NMOS Process Simulations with TSUPREM4 Before Gate Oxidation 전자정보대학김영석 18

19 NMOS Process Simulations with TSUPREM4 Gate Oxidation 전자정보대학김영석 19

20 NMOS Process Simulations with TSUPREM4 Polysilicon Gate Deposition 전자정보대학김영석 20

21 NMOS Process Simulations with TSUPREM4 Gate Poly Etch 전자정보대학김영석 21

22 NMOS Process Simulations with TSUPREM4 LDD and S/D Implant 전자정보대학김영석 22

23 NMOS Process Simulations with TSUPREM4 LDD Spacer Oxide Etch 전자정보대학김영석 23

24 NMOS Process Simulations with TSUPREM4 Metal Etch 전자정보대학김영석 24

25 Device Simulation 전자정보대학김영석 25

26 Device Simulation Input - Structure/Mesh - Doping Profiles - Structure Initialization - Process Step Spec. Basic Eqs. -Poission s i eq. - Continuity eq. - Drift-Diffusion Diffusion eq. Models - Rec-Gen - Mobility - F-D, Boltzmann Output - Structure/Mesh - Doping Profiles - Junction Depths 전자정보대학김영석 26

27 Device Simulators Generic Device Simulators PISCES 2ET: Standford Univ. FIELDAY PADRE MINIMOS-NT MEDICI: based on PISCES DESSIS ATLAS FLOODS Specialized Device Simulators MINIMOS: for MOSFET PISCES: for MOSFET, Standford Univ. SEQUOIA BIPOLE: for Bipolar 전자정보대학김영석 27

28 Initial Grid NMOS Device Simulations with MEDICI 전자정보대학김영석 28

29 Doping Regrid NMOS Device Simulations with MEDICI 전자정보대학김영석 29

30 NMOS Device Simulations with MEDICI Potential Regrid 전자정보대학김영석 30

31 NMOS Device Simulations with MEDICI Impurity Profiles 전자정보대학김영석 31

32 NMOS Device Simulations with MEDICI Impurity Contours 전자정보대학김영석 32

33 NMOS Device Simulations with MEDICI Gate Characteristics s 전자정보대학김영석 33

34 NMOS Device Simulations with MEDICI Drain Characteristics s 전자정보대학김영석 34

35 NMOS Device Simulations with MEDICI Drain Characteristics: s Potential Contours 전자정보대학김영석 35

36 NMOS Device Simulations with MEDICI Substrate Current 전자정보대학김영석 36

37 Gate Current NMOS Device Simulations with MEDICI 전자정보대학김영석 37

38 NMOS Device Simulations with MEDICI Drain Current Snapback 전자정보대학김영석 38

39 NMOS Device Simulations with MEDICI: Ex2 Definition of Mesh, Electrodes, Contacts 전자정보대학김영석 39

40 NMOS Device Simulations with MEDICI: Ex2 Doping Profiles 전자정보대학김영석 40

41 NMOS Device Simulations with MEDICI: Ex2 ID-Vg Curve 전자정보대학김영석 41

Microsoft PowerPoint - ch03ysk2012.ppt [호환 모드]

Microsoft PowerPoint - ch03ysk2012.ppt [호환 모드] 전자회로 Ch3 iode Models and Circuits 김영석 충북대학교전자정보대학 2012.3.1 Email: kimys@cbu.ac.kr k Ch3-1 Ch3 iode Models and Circuits 3.1 Ideal iode 3.2 PN Junction as a iode 3.4 Large Signal and Small-Signal Operation