HybridPACK 1Module FinalDataSheet AutomotiveHighPower
1Features/Description HybridPACK 1modulewithTrench/FieldstopIGBT3andEmitterControlled3diodeandNTC VCES = 7V IC nom = 4A / ICRM = 8A TypicalApplications HybridElectricalVehicles(H)EV MotorDrives Optimized for automotive applications with DC link voltagesupto45v ElectricalFeatures Increasedblockingvoltagecapabilityto75V VCEsatwithpositiveTemperatureCoefficient LowVCEsat LowSwitchingLosses LowInductiveDesign Tvjop=15 C Short-time extended Operation Temperature Tvjop=175 C MechanicalFeatures 2.5kVAC1minInsulation Al2O3SubstratewithLowThermalResistance CopperBasePlate IntegratedNTCtemperaturesensor Highmechanicalrobustness RoHScompliant Description Infineon s HybridPACK TM 1 DC6 is a variant of the HybridPACK TM 1 power module family with increased continuous current capability and a reduced stray inductance. Like all HybridPACK TM 1 products the HybridPACK TM 1 DC6 is an automotive qualified powermodule designed for electric vehicle applications. Designed for a 15 C junction operation temperature, with a 3 hour limited 175 C capacity the module accommodates a 3-phase Six-Pack configuration of Trench-Field-Stop IGBT3and matching emitter controlled diodes. The HybridPACK TM 1 power module family is built on Infineon s long time experience in the development of IGBT power modules, intense research efforts of new material combinations and assembly technologies. HybridPACK TM 1 DC6 is suitable for air or liquid cooling. The copper base plate combined with high-performance ceramic substrate and Infineon s enhanced wire-bonding process provides unparalleled thermal and power cycling capabilityand highest reliability for mild hybrid inverter or generator applications. For a compact design the driver stage PCB can easily be soldered on top of the module. All power connections are realized with screw terminals. ProductName OrderingCode 2
2IGBT,Inverter 2.1MaximumRatedValues Parameter Conditions Symbol Value Unit Collector-emittervoltage VCES 75 V ContinuousDCcollectorcurrent TC = 65 C, Tvj max = 175 C TC = 25 C, Tvj max = 175 C IC nom IC 4 1) A 5 1) A MaximumRMSmoduleterminalcurrent TF = 25 C, TCt = 15 C ItRMS 32 2) A Repetitivepeakcollectorcurrent tp = 1 ms ICRM 8 A Totalpowerdissipation TC = 25 C, Tvj max = 175 C Ptot 125 W Gate-emitterpeakvoltage VGES +/-2 V 2.2CharacteristicValues min. typ. max. Collector-emittersaturationvoltage IC = 4 A, VGE = 15 V IC = 4 A, VGE = 15 V IC = 4 A, VGE = 15 V Gatethresholdvoltage IC = 6.4 ma, VCE = VGE VGEth 4.9 5.8 6.5 V Gatecharge VGE = -15 V... 15 V QG 4.3 µc Internalgateresistor RGint 1. Ω Inputcapacitance f = 1 MHz, VCE = 25 V, VGE = V Cies 26. nf Reversetransfercapacitance f = 1 MHz, VCE = 25 V, VGE = V Cres.76 nf Collector-emittercut-offcurrent VCE = 45 V, VGE = V ICES.1 ma Gate-emitterleakagecurrent VCE = V, VGE = 2 V IGES 4 na Turn-ondelaytime,inductiveload Risetime,inductiveload Turn-offdelaytime,inductiveload Falltime,inductiveload Turn-onenergylossperpulse Turn-offenergylossperpulse SCdata IC = 4 A, VCE = 3 V VGE = ±15 V RGon = 1.8 Ω IC = 4 A, VCE = 3 V VGE = ±15 V RGon = 1.8 Ω IC = 4 A, VCE = 3 V VGE = ±15 V RGoff = 1.8 Ω IC = 4 A, VCE = 3 V VGE = ±15 V RGoff = 1.8 Ω IC = 4 A, VCE = 3 V, LS = 16 nh VGE = ±15 V, di/dt = 45 A/µs () RGon = 1.8 Ω IC = 4 A, VCE = 3 V, LS = 16 nh VGE = ±15 V, du/dt = 34 V/µs () RGoff = 1.8 Ω VGE 15 V, VCC = 36 V VCEmax = VCES -LsCE di/dt tp 8 µs, tp 6 µs, Thermalresistance,junctiontocase perigbt RthJC.12 K/W Thermalresistance,casetoheatsink Temperatureunderswitchingconditions perigbt λpaste=1w/(m K)/λgrease=1W/(m K) top continuous top max 3h over life time, for 1s within period of 1min VCE sat td on tr td off tf Eon Eoff ISC 1.45 1.6 1.7.12.12.12.8.8.8.36.4.4.2.3.3 5.1 6.8 7.3 9.1 12. 12.5 28 2 1.7 V µs µs µs µs mj mj RthCH.8 K/W Tvj op -4 15 15 175 A C 1) DC-collector current limited by power terminals. 2) DC-collector current limited by internal busbar. 3
3Diode,Inverter 3.1MaximumRatedValues Parameter Conditions Symbol Value Unit Repetitivepeakreversevoltage VRRM 75 V ContinuousDCforwardcurrent IF 4 1) A MaximumRMSmoduleterminalcurrent ItRMS 8 A Repetitivepeakforwardcurrent tp = 1 ms IFRM 8 A I²t-value VR = V, tp = 1 ms, VR = V, tp = 1 ms, 3.2CharacteristicValues min. typ. max. Forwardvoltage Peakreverserecoverycurrent Recoveredcharge Reverserecoveryenergy IF = 4 A, VGE = V IF = 4 A, VGE = V IF = 4 A, VGE = V IF = 4 A, - dif/dt = 45 A/µs () VR = 3 V VGE = -15 V IF = 4 A, - dif/dt = 45 A/µs () VR = 3 V VGE = -15 V IF = 4 A, - dif/dt = 45 A/µs () VR = 3 V VGE = -15 V Thermalresistance,junctiontocase perdiode RthJC.2 K/W Thermalresistance,casetoheatsink Temperatureunderswitchingconditions perdiode λpaste=1w/(m K)/λgrease=1W/(m K) top continuous top max 3h over life time, for 1s within period of 1min I²t VF IRM Qr Erec 88 85 1.55 1.5 1.45 25 295 35 15. 32. 34. 3.35 6.9 8.1 1.95 A²s A²s V A µc mj RthCH.85 K/W Tvj op -4 15 15 175 C 4NTC-Thermistor min. typ. max. Parameter Conditions Symbol Value Unit Ratedresistance TC = 25 C R25 5. kω DeviationofR1 TC = 1 C, R1 = 493 Ω R/R 5 5 % Powerdissipation TC = 25 C P25 2. mw B-value R2 = R25 exp [B25/5(1/T2-1/(298,15 K))] B25/5 3375 K B-value R2 = R25 exp [B25/8(1/T2-1/(298,15 K))] B25/8 3411 K B-value R2 = R25 exp [B25/1(1/T2-1/(298,15 K))] B25/1 3433 K Specificationaccordingtothevalidapplicationnote. 1) Diode forward current limited by power terminals. 4
5Module Parameter Conditions Symbol Value Unit Isolationtestvoltage RMS, f = 5 Hz, t = 1 min. VISOL 2.5 kv Materialofmodulebaseplate Cu Internalisolation basicinsulation(class1,iec6114) Al2O3 Creepagedistance Clearance terminaltoheatsink terminaltoterminal terminaltoheatsink terminaltoterminal Comperativetrackingindex CTI > 2 min. typ. max. Strayinductancemodule LsCE 15 nh Moduleleadresistance,terminals-chip TC=25 C,perswitch RCC'+EE' 1. mω Storagetemperature Tstg -4 125 C Mountingtorqueformodulmounting ScrewM5baseplatetoheatsink M 3. 1) 6. 1) Nm Terminalconnectiontorque ScrewM6 M 3. 1) - 6. 1) Nm Weight G 51 g dcreep dclear 12. 6.1 12. 6.1 mm mm 1) Mounting according to valid application note AN 21-8 Mounting Instruction HybridPACK 1. 5
6CharacteristicsDiagrams outputcharacteristicigbt,inverter(typical) IC=f(VCE) VGE=15V 8 7 6 outputcharacteristicigbt,inverter(typical) IC=f(VCE) Tvj=15 C 8 7 6 VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 5 5 IC [A] 4 IC [A] 4 3 3 2 2 1 1,,2,4,6,8 1, 1,2 1,4 1,6 1,8 2, 2,2 2,4 2,6 VCE [V],,5 1, 1,5 2, 2,5 3, 3,5 4, 4,5 5, VCE [V] transfercharacteristicigbt,inverter(typical) IC=f(VGE) VCE=2V 8 7 6 switchinglossesigbt,inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=1,8Ω,RGoff=4Ω,VCE=3V 25 2 Eon, Eoff, Eon, Eoff, 5 15 IC [A] 4 E [mj] 3 1 2 5 1 5 6 7 8 9 1 11 12 VGE [V] 1 2 3 4 5 6 IC [A] 6
switchinglossesigbt,inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=4A,VCE=3V 8 7 Eon, Eoff, Eon, Eoff, transientthermalimpedanceigbt,inverter ZthJC=f(t) 1 ZthJC : IGBT 6 5,1 E [mj] 4 ZthJC [K/W] 3,1 2 1 2 4 6 8 1 12 14 16 18 RG [Ω] i: ri[k/w]: τi[s]: 1,1419,36 2,6479,1937 3,335,3762 4,743,98695,1,1,1,1 1 1 t [s] reversebiassafeoperatingareaigbt,inverter(rbsoa) IC=f(VCE) VGE=±15V,RGoff=1,8Ω,Tvj=15 C 8 7 IC, Modul IC, Chip forwardcharacteristicofdiode,inverter(typical) IF=f(VF) 8 7 6 6 5 5 IC [A] 4 IF [A] 4 3 3 2 2 1 1 1 2 3 4 5 6 7 8 VCE [V],,2,4,6,8 1, 1,2 1,4 1,6 1,8 2, VF [V] 7
switchinglossesdiode,inverter(typical) Erec=f(IF) RGon=1,8Ω,VCE=3V 1 9 Erec, Erec, switchinglossesdiode,inverter(typical) Erec=f(RG) IF=4A,VCE=3V 11 1 Erec, Erec, 8 9 7 8 E [mj] 6 E [mj] 7 5 6 4 5 3 4 2 1 2 3 4 5 6 IF [A] 3 2 4 6 8 1 12 14 16 18 RG [Ω] transientthermalimpedancediode,inverter ZthJC=f(t) NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 1 ZthJC : Diode 1 Rtyp,1 1 ZthJC [K/W] R[Ω],1 1 i: ri[k/w]: τi[s]: 1,2989,51 2,12491,1769 3,3869,4823 4,643 1,81616,1,1,1,1 1 1 t [s] 1 2 4 6 8 1 12 14 16 TC [ C] 8
7Circuitdiagram 9
8Packageoutlines 13,5±,5 9x ø,5 ABC 77,5 57 6,6 C 14±,4 7 8 9 29 28 27 26 B B 17±,5 (9x) (21) D ( 2 : 1 ) 1,78±,1 3x,1ABC C 2,88±,1 ø,4 D EC 1,8±,2 9x ø,4 F B-B ( 3: 1 ) 1±,2 (4x) C ( 2 : 1 ) 4,5 -,3 1,5±,2 ø2,1±,1 F 5,85±,3 2,5 M6 11 17 32 53 33,45 41,25 44,835 64 75 71,55 96 111 117 128 17±,5 (8x) 1,15±,1 A ( 5 : 1 ),8±,1 18x,6DEC 18x,6 D EC 68,7 68,64 A 69,74 68,7 D 39,43 31,81 28 D,6 9,33±,3 1,4 E 9,775 27,55 3,865 38,485 42,295 71,55 75,315 82,935 86,745 113,8 123,575 ø5,5 A 1 12 11 23 21 22 7,1±,3 1718 1314 19 2 15 16 1 2 3 4 5 6 B 4x R2,5 34,67 37,21 75,32 79,13 All dimensions are to be measured in the mounted condition 113,8 1
9LabelCodes 9.1ModuleCode CodeFormat Data Matrix Encoding ASCII Text SymbolSize 16x16 Standard IEC2472 and IEC1622 CodeContent Content Module Serial Number Module Material Number Production Order Number Datecode (Production Year) Datecode (Production Week) Digit 1-5 6-11 12-19 2-21 22-23 Example(below) 71549 142846 5554991 15 3 Example 715491428465554991153 9.2PackingCode CodeFormat Code128 Encoding Code Set A SymbolSize 34 digits Standard IEC8859-1 CodeContent Content Backend Construction Number Production Lot Number Serial Number Date Code Box Quantity Identifier X 1T S 9D Q Digit 2-9 12-19 21-25 28-31 33-34 Example(below) 955669 2X3E 754389 1139 15 Example X9556691T2X3ES754389D1139Q15 11
RevisionHistory Major changes since previous revision Revision History Reference Date Description V1. 215-4-24 - V2. 215-11-9 - V3. 217-3-7-12
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