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1 Journal of the Korean Ceramic Society Vol. 44, No. 10, pp. 580~584, Properties of Chemical Vapor Deposited ZrC coating layer for TRISO Coated Fuel Particle Jun Gyu Kim, E-Sul Kum, Doo Jin Choi, Young Woo Lee*, and Ji Yeon Park* Department of Advanced Material Science and Engineering, Yonsei University, Seoul , Korea *Nuclear Materials Technology and Development, Korea Atomic Energy Research Institute, Daejon , Korea (Received August 23, 2007; Accepted September 14, 2007) yw w ky g gqd ½ ³Á Á Á *Á * w œw *w q ( ; ) ABSTRACT The ZrC layer instead of SiC layer is a critical and essential layer in TRISO coated fuel particles since it is a protective layer against diffusion of fission products and provides mechanical strength for the fuel particle. In this study, we carried out computational simulation before actual experiment. With these simulation results, Zirconium carbide (ZrC) films were chemically vapor deposited on ZrO 2 substrate using zirconium tetrachloride (ZrCl 4 ), CH 4 as a source and dilution gas, respectively. The change of input gas ratio was correlated with growth rate and morphology of deposited ZrC films. The growth rate of ZrC films increased as the input gas ratio decreased. The microstructure of ZrC films was changed with input gas ratio; small granular type grain structure was exhibited at the low input gas ratio. Angular type structure of increased grain size was observed at the high input gas ratio. Key words : TRISO, ZrC, CVD, Input gas ratio, Morphology 1. y w ƒ š ww x w w ƒ w š, w š ƒ (VHTR, Very High Temperature Reactor) v w w ƒ y w š. v w FBCVD (Fludized BED CVD) w 4 v xk üd l w k d, ü š w k d, ky³ d š š w k d. ƒ d w v w ƒ w w w d ky³ d. ky³ 1900 o C y ƒ, w œ w k, û q, yw ƒ. w š yd x ü y ù, š ü e ù. w ù Corresponding author : Doo Jin Choi drchoidj@yonsei.ac.kr Tel : Fax : p š ƒ ü v w v d k, š. w š 1-4) j w» š w y w» š ƒ v ky³ ƒ 3400 o C, wš, ü w y w ù ky g w» w ƒ w š. 5-7) gqw w d w yw (FB-CVD) x w» w,, ƒ w yw w ky g w w œ w» w x SOLGASMIX v w w sx k w k sq g (ZrO 2 ) ky g w. ky g» w œ w w œ š w w ky g r. 580
2 2. x ky g yw w w sx» w w SOLGAS- MIX ful v w w w sx sx w w (thermodynamic yield) yw w yw dw. x š ƒ w hot wallx s w š Super Kanthal ƒ w. Hot wallx s ü» wì outlet ƒ w š z ƒ w» susceptor š 10 tilt o w. ky g 8) yw»q(substrate) š { ü jš š ƒ, q ƒ y w w g (ZrO 2 ) w.» (carrier gas)» š (99.99%) Ar m g w š, ky g v w zirconium tetrachloride(zrcl 4, Aldrich chemical Co., USA) Zirconium iso-propoxide Zr(OC 3 H 7 ) 4, Aldrich chemical Co., USA 2 g w š» y g sx» w ü kw. 9,10) y w w» w š» 1g ZrCl 4 Zr(OC 3 H 7 ) 4 TG/DTA ww š ky g d X z w w XPS w ky g t w. SEM mw œ ky g», y w. 3. š ZrC w ƒ y š ZrCl 4 ky g yw w ZrC w ZrCl 4 (g) + CH 4 (g) ZrC(s) + 4HCl(g) w. 9,10) ZrC w,» (α=q ZrCl4 /Q CH4 ) w 0.9 atm» ky g w Fig. 1 ùkü. Fig. 1(a) ky g ƒ 1500 o C š yw w ky g gqd 581 Fig. 1. Thermodynamic yield of ZrC as a function of deposition parameter, (a) input gas ratio(α =Q ZrCl4 /Q CH4 ) and temperature, (b) input gas ratio (T = 1500 o C, P = 0.9 atm)» ƒ % ZrCƒ w w. Fig. 1(b)» ky g ùkü k w ZrCl 4 f ky g ƒwš graphite w. ZrCl 4 w k f free carbon w ƒ f dw. SOLGASMIX v w l ky g yw œ 0.9 atm,» (α=q ZrCl4 /Q CH4 ) 2,» (β=q H2 / Q ZrCl4+CH4+Ar ) o C w. Fig. 2 ky g ZrCl 4 TG/DTA w ùkü TG l 150 o C l w ƒ š 233 ~ 238 o C z w f ùkþ. DTA l 150 o C» v 44«10y(2007)
3 582 ½ ³Á Á Á Á Fig. 2. TG/DTA curves for ZrCl 4 (weight : 1 g) heated at 10 o C/min in Ar gas. Fig. 3. XRD patterns of ZrC layer which deposited deposition conditions of Table 1. jƒ ùkù z 233 ~ 238 o C vj ù kü yƒ š. w m ZrCl 4 source ƒ 238 o C wš w k Table 1 Fig. 4. Narrow scan in XPS spectra of ZrC layer on specimen 2 (a) C 1s and (b) Zr 3d.» w, w w ZrO 2»q ky g x w. Fig. 3 ky g X z w ZrCl 4 w» 9 20 y r S1 S2, Zr source w Table 1. The Details of Deposition Condition for ZrC Coating Substrate Deposition temperature ( o C) Gas flow rate (sccm) ZrCl 4 Deposition pressure (atm) Deposition time (min) S S Substrate Deposition temperature ( o C) Gas flow rate (sccm) Zr(OC 3 H 7 ) 4 Deposition pressure (atm) Deposition time (min) S w wz
4 화학증착법에 의하여 제조된 탄화지르코늄 코팅층의 물성 편 S3의 모든 시편에서 탄화지르코늄의 (111), (200), (220), (311) 회절선(JCPDS # )이 관찰되었다. 하지 만 입력기체비 변화에 따라 증착시 지르코늄과 카본의 조 성이 달라져 ZrC 회절 peak의 강도 차이를 나타내었다. 문헌 에 의하면 ZrC 에서 X의 값이 증가함에 따라 회 절 강도가 증가 한다고 나와 있으며 시편 S2보다 회절 강 도가 크게 나타나는 S1, S3에서는 카본의 함량이 지르코 늄보다 높을 것으로 생각 되어진다. 시편 S2는 S1 보다 더 얇은 증착막을 가지기 때문에 기판 피크가 크게 나타 났다고 생각되고, S1과 S3의 경우는 약하게 카본 graphite 피크가 관찰된 반면 S2는 반응성이 큰 수소의 많은 유량 으로 탄화지르코늄증착 반응에 관여하거나 증착에 참여 하지 않는 카본 source를 C-H의 형태로 결합하여 반응로 를 빠져나가는 수소에 의한 식각효과 때문에 거의 관측 되지 않은 것으로 여겨진다. Fig. 4는 시편 S2의 탄화지르코늄막을 XPS narrow scan 분석한 결과이다. 문헌 에서 보고되는 카본 C 피크의 위치는 ev, 지르코늄 Zr, Zr 피크의 위치는 각 각 178.9, 181 ev이고, narrow scan 결과도 또한 문헌과 비슷한 경향을 나타내었다. 각 피크의 면적을 ASF(atomic sensitive factor)로 나눈 값으로부터 면적비를 계산했을 때 Zr/C의 상대적 조성비는 약 이었다. 지르코늄에 대 한 카본의 비가 작은 것은 앞에서 설명했듯이 입력기체 비의 차이에 따른 반응성이 큰 수소의 C-H결합 영향 때 문인 것으로 생각 되어진다. 탄화지르코늄이 증착된 시편 파단면의 미세구조를 Fig. 5에 나타내었다. 시편 S1, S2, S3 각각 3.2, 2.43, 5.9 µm 의 막증착이 된 것을 확인하였다. 시편 S1의 경우 S2와 비교하면 희석가스인 수소의 유량이 작아서 상대적으로 원료의 농도가 커짐에 따라 두꺼운 막증착이 되어진 것 으로 여겨진다. Fig. 6은 증착된 탄화지르코늄의 표면형 상을 관찰한 것이다. 입력기체비가 적은 S1의 경우는 작 은 알갱이 구조를 하고 있으며 소량의 기공이 보인다. 하 지만 S1보다 입력기체비가 큰 S2의 경우는 S1보다 입자 의 크기가 커지고 결정의 형태가 좀 더 각진 형태로 나 타났다. 이는 유입되는 희석기체양의 차이에 의해서 증착 시 지르코늄과 탄소의 조성비 차이에 의한 것으로써 ZrC 에서 X값이 증가 함에 따라 표면의 입자 크기가 감소하 는 경향을 나타내고 결정성이 둥글게 되는 현상 때문이 다. 다른 지르코늄 소스를 사용하고 S1과 입력기체비를 같 이 하여 증착한 S3의 미세 조직의 경우에도 S1과 같이 작은 알갱이 구조를 하면서 기공이 불균일하게 입계에 존 재하는 것을 볼 수 있었다. 이로써 희석기체인 수소의 양 에 의하여 입력기체비가 달라지면 Zr/C의 비가 달라져 탄 화지르코늄의 표면 미세 조직이 변화 되는 것을 알 수 있 었다 ,12) X 13) ls 3d5/2 3d3/2 Fig. 5. SEM images of fractured cross section on ZrC layer which deposited deposition conditions of Table 1. (a) S1 (b) S2 (c) S3 X 11,12) Fig. 6. SEM images of surface morphology ZrC layer which deposited deposition conditions of Table 1. (a) S1 (b) S2 (c) S3 4. 결 론 프로그램을 이용하여 ZrC와 C의 열역 학적 평형분율 전산 모사 결과 증착 압력 0.9 atm에서 SOLGASMIX 제 44 권 제 10호(2007)
5 584 ½ ³Á Á Á Á ZrCl 4 ƒ š ƒ ƒw ZrC ùkü. ky g» y X z ƒ» û k š» j C-H w w g w ky g. w» w Ì t x. ƒ ƒ f É carbon w ƒw t ˆ»œ ü swš j w ƒ x k ëš j» ƒw. g Zirconium iso-propoxide w œ ky g w. m ZrO 2»q ky g d w» (α =Q ZrCl4 /Q CH4 ) 2,» (β =Q H2 /Q ZrCl4+CH4+Ar ) o C. Acknowledgement w. REFERENCE 1. Kazuo MINATO, Kousaku FUKUDA, Chemical Vapor Deposition of Silicon Carbide for Coated Fuel Particles, J. Nucl. Mater., (1987). 2. S. Kouadri-Mostefa, P. Serp, M. Hemati, and B. Caussat, Silicon Chemical Vapor Deposition (CVD) on Microporous Powders in a Fluidized Bed, Powder Technology (2001). 3. H. Nickel, H. Nabielek, G. Pott, and A.W. Mehner, Long Time Experience with the Development of HTR Fuel Elements in Germany, Nucl. Eng. Des, (2002). 4. Gregory K. Miller, David A. Petti, Dominic J. Varacalle Jr., and John T. Maki, Statistical Approach and Benchmarking for Modeling of Multi-dimensional Behavior in Triso-coated Fuel Particles, J. Nucl. Mater., (2003). 5. C. M. Hollabaugh, R. D. Reiswig, P.Wagner, L.A.Wahman, and R.W.White, A New Method for Coating Microspheres with Zirconium Carbide and Zirconium Carbide-carbon Graded Coats, J. Nucl. Mater., (1975). 6. D. R. Lide (Ed.), Handbook of Chemistry and Physics, 78 th ed., CRC Press LLC, pp. 4-98, K. Minato, K. Fukuda, H. Seiko, A. Ishikawa, and E. Oeda, Deterioration of ZrC-coated Fuel Particle Caused by Failure of Pyrolytic Carbonlayer, J. Nucl. Mater., (1998) 8. J. G. Kim, E-Sul Kum, D. J. Choi, S. S. Kim, H. L. Lee, Y. W. Lee, and J. Y. Park, A Study on the CVD Deposition for SiC-TRISO Coated Fuel Material Fabrication, J. Kor. CeramU Soc., 44 [3] (2007). 9. G. H. Reynolds, Chemical Vapor Deposition of ZrC on Pyrocarbon-coated Fuel Particles, J. Nucl. Mater., (1974). 10. K. Ikawa and K. Iwamoto, Coating Microspheres with Zirconium Carbide, G JU Nucl. Mater (1972). 11. H. B. Lee, K, C, Cho, and J. W. Lee, Synthesis and Temperature Profile Analysis of ZrC by SHS Method, J. Korea. CeramU Soc., 32 [6] (1995). 12. Obata. N and Nakazawa, Superlattice Formation in Zirconium-carbon System, J. Nucl. Mater., (1976). 13. J. Chastain, Handbook of X-ray Photoelectron Spectroscopy, Perkin-Elmer Corporation Physical Electronics Division, pp. 6,40, w wz
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