Microsoft PowerPoint - ch25ysk.pptx

Similar documents
Microsoft PowerPoint - ch07ysk2012.ppt [호환 모드]

Microsoft PowerPoint - analogic_kimys_ch10.ppt

Microsoft PowerPoint - ch03ysk2012.ppt [호환 모드]

½½¶óÀ̵å Á¦¸ñ ¾øÀ½

Microsoft PowerPoint - dev6_TCAD.ppt [호환 모드]

歯03-ICFamily.PDF

Microsoft Word - SRA-Series Manual.doc


Slide 1

Â÷¼¼´ëÀüÀÚÁ¤ºÎ¼�ºñ½ºÀÌ¿ëÈ°¼ºÈ�

총서11. 프랜차이즈사업 국내외 성공사례

서보교육자료배포용.ppt

DIB-100_K(90x120)

THE JOURNAL OF KOREAN INSTITUTE OF ELECTROMAGNETIC ENGINEERING AND SCIENCE Sep.; 30(9),

전자실습교육 프로그램

<4D F736F F F696E74202D20BEC6B3AFB7CEB1D7B9D7C6C4BFF64943BFF6C5A9BCA55F FBEC8B1E6C3CA2E707074>

Çмú´ëȸ¿Ï¼º

2012³â8¿ùÈ£˙ȸš

Siemens

EMCA-EC_STO_BES_E_ a_ k1

포도.PDF

¾Ë±â½¬¿îÀ±¸®°æ¿µc03ÖÁ¾š

#³óÃÌ°æÁ¦ 64È£-Ä®¶ó¸é

¾Èµ¿±³È¸º¸ÃÖÁ¾

T100MD+

KARAAUTO_4¿ù.qxd-ÀÌÆå.ps, page Normalize

Microsoft Word - Installation and User Manual_CMD V2.2_.doc

THE JOURNAL OF KOREAN INSTITUTE OF ELECTROMAGNETIC ENGINEERING AND SCIENCE. vol. 26, no. 1, Jan 서론 PC PMIC(Power Management IC) [1]. PMIC DC-D

Microsoft PowerPoint - ch05ysk2012.ppt [호환 모드]

경제관련 주요 법률 제,개정의 쟁점 분석.doc

Slide 1

Microsoft PowerPoint - ICCAD_Analog_lec01.ppt [호환 모드]

Microsoft Word - JAVS_UDT-1_상세_메뉴얼.doc

歯동작원리.PDF

歯FDA6000COP.PDF

논리회로설계 3 장 성공회대학교 IT 융합학부 1


DC Link Application DC Link capacitor can be universally used for the assembly of low inductance DC buffer circuits and DC filtering, smoothing. They

BS-K1117□-M□□-3012_ProductGuide_KR_PDF

SRC PLUS 제어기 MANUAL

내용 q Introduction q Binary passand modulation Ÿ ASK (Amplitude Shift Keying) Ÿ FSK (Frequency Shift Keying) Ÿ PSK (Phase Shift Keying) q Comparison of

FTTH 기술발표

전자교탁 사양서.hwp

Dual- Gate FET T he Analysis and Applications of Nonlinear Characteris tics of Dual- Gate FET

2

BJFHOMINQJPS.hwp

EP-B-P407 [변환됨].eps

Microsoft PowerPoint - Ch12

?퇴

¹Ìµå¹Ì3Â÷Àμâ

Microsoft Word - SMB-63-2_KR_.doc

歯4.PDF

Microsoft Word doc

Microsoft Word - 산업_홈쇼핑_

What’s semiconductor?

º¸µµ¿Â

MAX+plus II Getting Started - 무작정따라하기

untitled

YD-3533.xls

. 서론,, [1]., PLL.,., SiGe, CMOS SiGe CMOS [2],[3].,,. CMOS,.. 동적주파수분할기동작조건분석 3, Miller injection-locked, static. injection-locked static [4]., 1/n 그림

?

5. Kapitel URE neu

2002 KT

¼º¿øÁø Ãâ·Â-1

전자회로-07장

(Microsoft Word - GNU\272\270\260\355\274\255)


H3050(aap)

Microsoft PowerPoint - Ch13

유성감속기_K_170404

,,,,,, (41) ( e f f e c t ), ( c u r r e n t ) ( p o t e n t i a l difference),, ( r e s i s t a n c e ) 2,,,,,,,, (41), (42) (42) ( 41) (Ohm s law),

Microsoft PowerPoint - AC3.pptx

BS-K1217-M□□-3012_ProductGuide_KR_PDF

°ø±â¾Ð±â±â

Microsoft Word - Preliminary_ALT6600메뉴얼(M6600-K01C)160812

Microsoft Word - 심규환.doc

디지털공학 5판 7-8장

歯AG-MX70P한글매뉴얼.PDF

열린포항 12월호

<313920C0CCB1E2BFF82E687770>

Microsoft Word _건설업_2Q12preview.doc

歯15-ROMPLD.PDF


M88K, OWNE S MANUA AC,,, AC, ( ), * 2CM, 4CM, 4CM ACK-MOUNTING ACK, OUTPUT SPEAKE CAE CAE,, TV, X connector Pin 1: ground, pin 2:hot(+) and pin: cold(

<4D F736F F F696E74202D F FB5BFBACEC7CFC0CCC5D820B1E8BFA9C8B22E BC8A3C8AF20B8F0B5E55D>

歯02-BooleanFunction.PDF

Microsoft Word - DCMD-1000 사용자 메뉴얼.docx

DocsPin_Korean.pages

Coriolis.hwp

- 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다 Part Picture Description 5. R emove the memory by pushing the fixed-tap out and Remove the WLAN Antenna. 6. INS


레이아웃 1


PowerPoint 프레젠테이션

untitled

목차 본 취급설명서의 사용법 본 사용설명서에서는 제품상에 표시된 채널명 및 버튼명, 소프트웨어의 메뉴명 등이 대괄호 ([ ]) 안에 표시됩니 (예: [MASTER] 채널, [ON/ OFF], [File] 메뉴) 시작하시기 전에 특징...3 부속품...4 시작하시기 전에

HW5 Exercise 1 (60pts) M interpreter with a simple type system M. M. M.., M (simple type system). M, M. M., M.

(, sta*s*cal disclosure control) - (Risk) and (U*lity) (Synthe*c Data) 4. 5.

( Full Automatic Printer ) 작용업종 : Tube Light ( 형광등 1.2m / 2.4m) 가로등조명. 인테리어산업용조명 Loader 1.2m Stencil Solder LED LD812V Reflow 8 to 10 Hot Air Convecti

EP-B-P211.eps

Transcription:

Dynamic Analog ircuits (h. 5) 김영석 충북대학교전자정보대학 0.3.. Email: kimys@cbu.ac.kr 전자정보대학김영석 5-

ontents 5. The MOSFET Switch 5. Fully Differential ircuits 5.3 Switched-apacitor ircuit 전자정보대학김영석 5-

5. The MOSFET Switch MOS TG(transmission Gate) is best 0 < THP, NMOS <, PMOS 0 <, TG < < DD DD < DD THN 전자정보대학김영석 5-3

ON>OFF MOSFET Switch: harge Injection(I) hannel harge to : No effect due to low impedance of hannel harge to load: lower out (NMOS) But, OFF>ON: No effect due to Rch Q I Δ load ' ox ' ox where Δ load W L ( W L ( THN ' ox GS GS W L ( THN 0 DD THN THN load ) (total charge the channel) ) is nonlear wrt F THN ) / + γ ( φ + φ ) harge Injection: Signal Dependent >Harmonic Distortion F 전자정보대학김영석 5-4

MOSFET Switch: apacitie Feedthrough(F) out hange due to apacitie ouplg OFF>ON: No Effect because out is charged to ON>OFF: out hanges due to apacitie ouplg When MOSFET Triode, gsgdox/ When MOSFET Saturation, ti Δ load where DD oerlap oerlap ' ox oerlap + load W LD, LD oerlap length 전자정보대학김영석 5-5

Reduction of harge Injection/lock Feedthrough ) Addg Dummy Switch ) Usg MOS TG 3) Usg a Fully Differential ircuitsit 전자정보대학김영석 5-6

MOSFET Switch: kt/ Noise Maximum RMS Output Noise from a Simple R ircuit: kt / 64μ @ pf rms 00μ rms @ 00 ff 전자정보대학김영석 5-7

5.. Sample-and-Hold (SH) ircuits ) Simple SH Sample: S On (H) Hold: S Off (Hout) ) losed-loop SH Sample: S/S3 On, S Off, Hout Hold: S/S3 Off, S On 전자정보대학김영석 5-8

SH ircuits 3) losed-loop SH Usg OTA Sample: S On, controlhigh Hold: S Off, controllow No S/S3 SH ) Popular 4) losed-loop SH Usg OTA Sample: S On, S Off, LPF Hold: S Off, S On H at irtual GND: dependent, d Not Nonlear 전자정보대학김영석 5-9

out p Ga m op if A om OL A OL is large 5. Fully-Differential ircuits ( p m ) p op MFB m om DD or GND or anythg So, need MFB to set M DD / Merits Mimize i i I/F oupled Noise Rejection Double Output Swg, out.maxdd 전자정보대학김영석 5-0

t t t t 5.. A Fully-Differential Sample-and-Hold Operation t ( Sample), t 0, φ Off, OFF t, φ Off, t top top bot OFF OFF, top + + M ( φ ) : Independent of ( Hold), φ On, OFF ( φ ), OFF 3 OFF M const + 3 3 top OFF + OFF + OFF 3 + OFF M ( φ ) : Dependent on 3 ( φ ), OFF ( φ ), OFF 3 ( φ3 ) : M Signal > M Rj Rejected td 전자정보대학김영석 5-

Fully-Differential Sample-and-Hold onnectg the Inputs to the Bottom (Poly) Plate Substrate Noise Sees (Sample) or out (Hold) > No effect But, (b) Substrate Noise is coupled to the put of Op-amp 전자정보대학김영석 5-

5.3 Switched-apacitor ircuits Switched-capacitor resistor simulates a large alue resistor (>MΩ) ) (,,, q I q high q high Δ φ φ ) ( sc sc ag T R where R T T q I clk sc f 전자정보대학김영석 5-3

5.3. Switched-apacitor Integrator Parasitic-Sensitie Integrator p3@m, p4@out: No effect p: change transfer function out / s R sc F s I F + p f clk 전자정보대학김영석 5-4

Switched-apacitor Integrator Parasitic-Insensitie Integrator Nonertg Inertg p: @S on, M@S on, no charge transfer p,p3@m, p4@out: no effect out / s F + + Rsc F s f I clk 전자정보대학김영석 5-5

Summg Integrator (b): remoe redundant switches 3 f s f s f s F F F out + 3 f f f clk clk clk 전자정보대학김영석 5-6

Lossy Integrator out R R 4 3 + sr3 + sr 4 전자정보대학김영석 5-7