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THE JOURNAL OF KOREAN INSTITUTE OF ELECTROMAGNETIC ENGINEERING AND SCIENCE. 2017 Feb.; 28(2), 105 112. http://dx.doi.org/10.5515/kjkiees.2017.28.2.105 ISSN 1226-3133 (Print) ISSN 2288-226X (Online) HMET J- Wideband Class-J Power Amplifier Design Using Internal Matched 임은재 유찬세 김도경 선중규 윤동환 윤석희 이영철 Eun-Jae Lim Chan-Se Yoo* Do-Gueong Kim Jung-Gyu Sun Dong-Hwan Yoon Seok-Hui Yoon Young-Chul Rhee** 요약,. J- 2 -. J- -. -. 2 J-. J-, 1.8 2.7 GHz(900 MHz) 50 W(47 dbm) 72.6 %, 66.5 % PAE. Abstract In order to satisfy the diffusion of multimedia service in mobile communication and the demand for high-speed communication, it is essential to modify and improve high efficiency, wideband and nonlinear characteristic of multiband power amplifier. This research is designed to implement a single-stub matching circuit as a 2nd harmonic one that meets conditions of the Class-J power amplifier. Low characteristic impedance of the single-stub line is necessary to suit conditions of wideband Class-J. This research uses ceramic substrates having high permittivity to implement the single-stub line with low characteristic impedance, which eventually results in an amplifier satisfying the output impedance terms of Class-J in wideband frequency range. This result attributes to use of packaged with a 2nd harmonic matching circuit and external fundamental circuit. The measurement results of the Class-J amplifier confirms the following characteristics: more than output power of 50 W(47 dbm) in bandwidth of 1.8 2.7 GHz(0.9GHz), maximum drain efficiency of 72.6 %, and maximum PAE characteristic of 66.5 %. Key words: Class-J Power Amplifier, High Permittivity Ceramic Material, Packaging, High Efficiency. 서론 LIG (LIG Nex1) * (Korea Electronics Technology Institute) ** (Department of Information & Communication Engineering, Kyung-nam University) Manuscript received October 24, 2016 ; Revised November 14, 2016 ; Accepted January 17, 2017. (ID No. 20161024-109) Corresponding Author: Young-Chul Rhee (e-mail: micropt@kyungnam.ac.kr) c Copyright The Korean Institute of Electromagnetic Engineering and Science. All Rights Reserved. 105

THE JOURNAL OF KOREAN INSTITUTE OF ELECTROMAGNETIC ENGINEERING AND SCIENCE. vol. 28, no. 2, Feb. 2017., [1]., D, E, F, F 1 - [2] [5]. [6]. 100 %., 100 %, [7],[8]. 2 J-. J- /, 2 /,, AB, B- [9]. J-, LDMOS J- [10],[11]. J- 60 % [12],[13], 200 MHz 70 %, AB, B- [14]. 10 W, 50 W J-. L S- J- Peter Wright [15] 2 - J- 2, - B-, J-. J- 2 J-., 50 W J-, 2., J- 2. 2 LTCC, J-.. J- 급전력증폭기동작특성분석 J- 2, (1), (2) [9]. 106

HMET J- m ax (1) m ax (2), MA X,, m ax. J- [15],[17] (1), (2). - J- B- J- *. - J- 2. 그림 1. J- Fig. 1. Block diagram of internal matched wideband Class-J power amplifier.. 개방된 - 스터브선로의광대역특성분석 1 2 - J-. - 2 - Q -. -. 2-10 Ω, 25 Ω, 50 Ω, 75 Ω, Ropt=1. 2 - 그림 2. - Fig. 2. distribution of open-stub line characteristic impedance.. 2 -. 2 -. J- 2 - B- J-. -, PCB 107

THE JOURNAL OF KOREAN INSTITUTE OF ELECTROMAGNETIC ENGINEERING AND SCIENCE. vol. 28, no. 2, Feb. 2017.. ( ) 2 -.. 광대역 J-급전력증폭기설계및특성분석 60 W (CGH60060D) AB-. LTCC 2.. 3 2 3D. 2 10 Ω 60, 11 Ω 26. 6.69 Ω 1.46. 4 J- 2, 2 2 그림 4. Fig. 4. Output impedance variation with internal matching circuit.. B-, J-. 5 3 J-. CW. 6, 7 2.3 GHz,,., 47.89 dbm 그림 3. Fig. 3. Internal matching circuit structure. 그림 5. J- Fig. 5. Manufactured wideband Class-J power amplifier. 108

HMET J- 표 1. J- Table 1. Wideband Class-J PA test result. 그림 6. (2.3 GHz) Fig. 6. Output power test result(2.3 GHz). [GHz] [dbm] [db] DE [%] PAE [%] 1.8 47.89 11.71 68.21 63.61 1.9 47.68 9.68 64.21 57.30 2.0 47.71 9.71 68.06 60.76 2.1 47.83 9.83 72.47 64.93 2.2 48.01 10.01 73.33 66.02 2.3 47.87 9.87 69.20 62.07 2.4 47.72 9.72 67.07 59.92 2.5 47.62 9.62 65.75 58.57 2.6 47.17 9.17 63.09 55.46 2.7 47.46 9.46 72.36 64.17 그림 7.,, PAE(2.3 GHz) Fig. 7. Output power, gain, PAE according to input power (2.3 GHz)., 62.07 %, 9.87 db. 8 1.8 2.7 GHz,,,, 1. 47.17 48.01 dbm(52 63 W), 9.17 11.71 db, 63.09 73.33 %, 55.46 66.02 %. 9 7 db - 2.3 GHz 2-tone IMD OIP3, 41.82 dbc/40.7 dbm@1 tone IMD 58.61 dbm 그림 8. J- (,,, ) Fig. 8. Wideband Class-J PA test result(output power, power gain, drain efficiency and PAE). 그림 9. IMD/OIP3 (40.7 dbm@1 tone) Fig. 9. IMD/OIP3 test result(40.7 dbm@1 tone). 109

THE JOURNAL OF KOREAN INSTITUTE OF ELECTROMAGNETIC ENGINEERING AND SCIENCE. vol. 28, no. 2, Feb. 2017. 표 2. L S- J- Table 2. L/S-band Class-J PAs performance. [GHz] [W] [%] [db] [V] [11] [13] [15] [16] [17] 2.14 1.5 2.5 1.5 2.5 1.65 2.7 1.6 30 1.8 2.7 104.7 10 10 10 10 50 71 55 70 (DE) 50 60 (PAE) 55 72 (DE) 57 67 (PAE) 63 72 (DE) 55 66 (PAE) - 15 12.2 12.6 10.5 11.7 30 - - 47 28 28 OIP3. 2 L S- 900 MHz, J-.. 결론 J- B- 2 10 Ω 2 1.8 2.7 GHz J-. 10 Ω LTCC, 2. J- 1.8 2.7 GHz 900 MHz Psat 50 W (47 dbm) 10 db, 66 % PAE. J- 50 W, J-. References [1] Aarno Parssinen, "Multimode-multiband transceivers for next generation of wireless communications", 2011 European Solid-State Device Research Conference(ESS- DERC), pp. 42-53. Sep. 2011. [2] A. Sigg, S. Heck, A. Brackle, and M. Berroth, "High efficiency current-mode class-d amplifier at 2.6 GHz using pure differential transmission line filters", Electronics Letters, vol. 49, no. 1, pp. 47-49, Jan. 2013. [3] Philip A. Godoy, SungWon Chung, Taylor W. Barton, David J. Perreault, and Joel L. Dawson, "A highly efficient 1.95-GHz, 18-W asymmetric multilevel outphasing transmitter for wideband applications", IEEE MTT-S International Microwave Symposium Digest, Jun. 2011. [4] Song Liu, Dominique Schreurs, "Intrinsic class-f RF power amplifier with a commercial transistor based on a modified "Hybrid" approach", 2012 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, Sep. 2012. [5] Yingjie Xu, Jingqi Wang, and Xiaowei Zhu, "Analysis and implementation of inverse class-f power amplifier for 3.5 GHz transmitter", 2010 Asia-Pacific Microwave Conference, pp. 410-413, Dec. 2010. [6] Andrei Grebennikov, Nathan Sokal, Switchmode RF Power Amplifier, Newnes, 2007. [7] Andrei Grebennikov, "A high-efficiency transmission-line Class-E power amplifier", High Frequency Electronics, pp. 16-24, Dec. 2009. [8] David Schmelzer, Stephen I. Long, "A Class-F amplifier at 2 GHz with > 80 % PAE", IEEE Journal of Solid-State Circuits, vol. 42, no. 10, pp. 2130-110

HMET J- 2136, Oct. 2007. [9] Steve C. Cripps, RF Power Amplfiers for Wireless Communications, 2nd Edition, Boston MA: Artech, 2006. [10] Tongning Wu, Calvin Plett, Jhon W. M. Rogers, and Ming Li, "A fully integrated 1 4 GHz Class-J power amplifier", 2014 IEEE 15th Wireless and Microwave Technology Conference, Jun. 2014. [11] Motoyoshi Iwata, Tomohide Kamiyama, Takachi Uno, Kaxuhiro Yahata, and Hikaru Ikeda, "First pass design of a high power 145W, high efficiency Class-J power amplifier using waveform engineering", IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, pp. 7-9, Jan. 2013. [12] Zhenyang Wang, Guang Yang, and Falin Kiu, "An easily implementable structure for broad band high efficiency Class-J power amplifier", IEEE Workshop Electronics, Computer and Applications, pp. 786-790, May 2014. [13] Li Ma, Fei You, and Xianyun Hou, "An output match design method for high efficiency and broadband Class- J PA", IEEE Topical Conference Power Amplifiers for Wireless and Radio Applications(PAWR), 43-45, Jan. 2014. [14] K. Mimis, K. A. Morris, and J. P. McGeehan, "A 2 GHz Class-J power amplifier for base station applications", IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, pp. 5-8, Jan. 2011. [15] Peter Wright, Jonathan Lees, Johannes Benedikt, Paul J. Tasker, and Steve C. Cripps, "A methodology for realizing high efficiency Class-J in linear and broadband PA", IEEE Transactions Microwave Theory Techniques, vol. 57, no. 12, pp. 3196-3204, Dec. 2009. [16] Rui Ma, Sushmit Goswami, Koji Yamanaka, Yuji Komatsuzaki, and Akira Ohta, "A 40-dBm high voltage broadband Class-J power amplifier for PoE microbasestations", IEEE MTT-S International Microwave Symposium Dig., Jun. 2013. [17] Saeed Rezaei, Leonid Belostotski, and Fadhel M. Ghannouchi, "1.6 3 GHz, 10 W, 60 % efficiency Class-J PA for cognitive radio applications", 2013 IEEE 60th International Midwest Symposium Circuits and Systems, pp. 880-883, Aug. 2013. 2010 2 : () 2016 2 : ( ) 2014 112015 12 : 2015 12: LIG [ 주관심분야 ], 1998 2 : () 2010 8 : ( ) 1998 3: [ 주관심분야 ], 111

THE JOURNAL OF KOREAN INSTITUTE OF ELECTROMAGNETIC ENGINEERING AND SCIENCE. vol. 28, no. 2, Feb. 2017. 1996 2 : () 2016 2 : () 2003 72009 2 : 2009 7: LIG [ 주관심분야 ], 2001 2 : ( ) 2001 32007 7 : 2007 72015 4 : SK 2015 4: LIG [ 주관심분야 ], 2000 2 : ( ) 2005 42010 5 : SK 2017 2: 2010 6: LIG [ 주관심분야 ], 1981: [ 주관심분야 ],, 2003 2 : ( ) 2005 2 : () 2003 3: LIG [ 주관심분야 ], 112