내지

GRI G3 Guideline GRI G3 A + 3 G3 Guideline A + GOOD MEMORY 2009 FSC(Forest Stewardship Council ) FSC:

CONTENTS C2 CEO 08 10 12 14 27 Economic 30 Performance 32 35 About This Report 2009 Social Performance 40 42 47 49 GRI(Global Reporting Initiative) G3 BEST (BEST Sustainability Reporting Guidelines) GRI G3 Application Level A + GRI Environmental Performance 55 56 58 60 63 1 12 2006 1 12 3 2006 2009 Ton, TOE, TC, m 2, m 3, mm, GB, Gb, MWh HNSL HNSL 65 65 66 67 68 69 HNSL 71 80 83 BEST/GRI Guideline Index 84 3 88 90 www.hynix.co.kr sustainabilityhynix.com 031-630-2953 031-645-8033 SM 2009 4 15 3

GOOD MEMORY BETTER TOMORROW Good Memory

DRAM 2006 4 DRAM 2 300mm 5 54 DRAM 2009 2 44 1 DRAM 3% 6% 5% 8% 13% 2006 2007.1Q.2Q.3Q.4Q

+ 2Gb Mobile DDR + 2GB DDR3 SODIMM

(1) FAB(Fabrication)_ (2) SOP(Small Outline Package) (3) CIS(CMOS Image Sensor)_ + CIS + 128Gb NAND Flash TLC

NAND Flash 2004 NAND Flash 2005 1 3 NAND Flash 300mm FAB 200mm FAB 3 32Gb NAND Flash SOP 8 NAND Flash 41 NAND Flash 32 2009 NAND Flash 12.3% 2007 2006 17.1% 17.7% isuppli CIS CMOS CIS 1 11 CIS

(1) ZRAM_ 별도의 캐패시터를 사용하지 않고, 데이터 저장 및 보존이 가능한 메모리 반도체로 기존 DRAM 대비 구조가 간단하여 미세화나 고용량화에 유리한 장점을 가지고 있음 (2) PCRAM_ 상변화 물질에 전류를 가하면, 고체와 액체로 변하는 상변화에 따른 저항 차이를 이용하는 차세대 비휘발성 메모리 반도체로 플래시 메모리의 비휘발성과 DRAM의 빠른 속도의 장점을 모두 가지고 있음 (3) STT RAM(Spin-Torque Transfer RAM)_ 자성 물질에 전류를 가하여, 자화상태의 변화에 따른 저항 차이를 이용하는 차세대 비휘발성 메모리 반도체로 특히 무제한에 가까운 반복 기록 및 재생이 가능할 뿐만 아니라, DRAM 이상의 고용량을 구현할 수 있는 것이 특징임 미래를 위한 투자 세계 최고의 반도체 전문회사가 되겠다는 신념으로 연구개발에 지속적으로 투자를 아끼지 않은 결과, 과거 매출 액 대비 5~6%수준의 연구개발비 비중을 년에는 10.8%수준까지 확대하였습니다. 전체 인원의 20%수준 의 연구개발인력을 확보하여 미래성장을 위한 기술기반 강화에 노력하고 있으며, 미국, 일본, 대만에 해외기술 센터를 설립하는 한편, 국내외 유망기업, 대학, 연구소와 전략적 협력관계를 강화해 나가고 있습니다. 아울러 하이닉스는 ZRAM⑴, PCRAM⑵, STT RAM⑶과 같은 차세대 메모리 라이선스 취득 등 중장기 성장을 위한 기술 개발에서도 한 발 앞선 준비를 해나가고 있습니다.

2006 2007 10.8 % 5. 9% 5. 3% + 매출액 대비 연구개발비 비중

200mm 300mm 2007 The worlds best semiconductor company 08

2009 3 09

Hynix Semiconductor Manufacturing America Inc. Hynix Semiconductor America Inc. 1983 2001 26 13 CEO. 12. 31 1983 2 16 5,762 5 5,262 6 8,180 21,457 BBB+ B1 (Moody's) BBB+ B+ (S&P) BBB+ B+ (Fitch) CEO DRAM Flash CIS HNSL HSA HSJ HST 10

Hynix Semiconductor U.K. Ltd. Europe Holdings Ltd. Hynix Semiconductor (Wuxi) Ltd. Hynix Semiconductor Deutschland GmbH Hynix Semiconductor Japan Inc. Hynix Semiconductor Hong Kong Ltd. Hynix Semiconductor (Shanghai) Co., Ltd. Hynix Semiconductor Taiwan Inc. Hynix Semiconductor Indian Subcontinent Private Ltd. Hynix Semiconductor Asia Pte., Ltd. Hynix-Numonyx Semiconductor Ltd.. 12. 31 2 6 6 4 8 29 Hynix Semiconductor America Inc.(HSA) Hynix Semiconductor Manufacturing America Inc.(HSMA) Hynix Semiconductor Deutschland GmbH(HSD) Hynix Semiconductor Europe Holdings Ltd.(HSE) Hynix Semiconductor U.K. Ltd.(HSU) Hynix Semiconductor Asia Pte.Ltd.(HSS) 13 Hynix Semiconductor Hong Kong Ltd.(HSH) Hynix Semiconductor Japan Inc.(HSJ) Hynix Semiconductor Taiwan Inc.(HST) Hynix Semiconductor (Shanghai)Co., Ltd.(HSCS) Hynix-Numonyx Semiconductor Ltd.(HNSL) Hynix Semiconductor (Wuxi) Ltd.(HSMC) Hynix Semiconductor Indian Subcontinent Private Ltd.(HSIS) 11

1. (.12) 4. 1Gb DRAM (.11) 7Gbps 1(Gb) DDR5 54 2(Gb) DRAM 2. NAND Flash 300mm (.8) 40 NAND Flash 300mm 3. (.4) 2 5. (HiSPM) (.3) 6 29 4 1 2 3 12

(1) 3_ 3 6. 7. 3 Triple-Level Cell 32Gb NAND Flash (.6) MLC(Multi Level Cell) 3 NAND Flash (.8) NAND Flash 6 5 7 8 8. (.10) 9. (.2) 10 10. (.10) 9 13

SM 2007 5 SM 9 HNSL HNSL SM HNSL SM Creating Top for Sustainable Future Reputation & Brand Image Value-up Economic Development Social Sharing Sustainability Management Eco-Friendly Ethical Culture STEP 03(2011~) STEP 02(~2010) STEP 01(~) 14

(1) HNSL(Hynix-Numonyx Semiconductor Ltd.)_ (2) LACP(League of American Communications Professionals) 2001 Annual Report 10 30 7 LACP 2007 Vision Awards Annual Report Competition (HYSONIC) 12 5 HYSONIC, Hynix Sustainability's Online and Integrated Communication system HYSONIC HYSONIC 2009 HYSONIC SM SM HNSL SM CEO SM CEO SM SM HNSL SM TFT 15

1,270 19 16

QBR (Quarterly Business Review) TQRDC (TechnologyQualityResponsivenessDeliveryCost) 40 QTR (Quarterly Technology Review) 40 CCK (Customer Care Kit) 41 (Newsletter) Newsletter 40 Technology Road Show (Roadmap Align) - - IR - - IR IR - - CEO 44 1 43 3 44 1 44 CEO 2 44 1004 44 ESH - HEINET 48 (Joint Workshop) 21 CEO 48 1 - ESH - Win-Win 1-49 - 10 54 DRAM, NAND Flash, CMOS Image Sensor(CIS) 1,270 NGO 17

36 6 36 Test 1 Test 2 Test 3 Test 4 Test 5 Test 6 KPIs (2007.12~.11) High Medium Low Medium High 18

(1) ESH Environment, Safety, Health (2) (LCA, Life Cycle Assessment) DMA(Disclosure of Management Approach) 2009 Economic Performance DRAM 3 2007 5.9% 10.8% Alignment Social Performance e- QBR, QTR QTR, QBR 266 1,105 Good Memory Environmental Performance ESH (LCA) Eco-Efficiency 19

2007 3 HEMS,Hynix Ethics Management System 2006 2007 e- 1 3 Cyber 2 3 HEMS e- 2 2 4 HEMS 6 2006 2007 0.32 0.23 0.30 e- 13-10 - 2 HNSL - 72.8 81.6 65.0 76.3 77.4 4 11 3 6 6 4 CEO 20

HEMS 2005 7 50 30 Joint Workshop HEMS HEMS e- 2 e- 2005 2006 Photo Drama 2 9 1 10 HEMS 05 06 1 08 2 HEMS http://ethics.hynix.com 21

11 2005 2007 81.6 83.3 81.1 80.4 81.6 83.3 81.1 80.4 2006 2007 143 137 129 1,206 2,112 2,497 1,558 2,382 2,723 39 158 191 1 11 13,161 1 22

2007 6 7 2 177 5 2007 12 12 CIS 23 205 168 2 2 (HSA) (Compliance Program) 2007 12 A A 343 53 AAA AA 1 A 10% 3% 2 A 23

1996 12 12 459,602,790 64.0% 36.0% 8.2% 8.0% 6.2%) 6.1% 7.5% 8.2%. 12. 31 8.0% 6.2% 6.1% 7.5% 64.0% 2009 2009 3 4 8 12 CEO 67% 2007 Director's Manual 5 24

(1) (Surety bond) (2) L/C(, Letter of Credit)_ 5 HNSL 5 3 (http://bod.hynix.com) 7 bod.hynix.com (bod.hynix.com) 12 2009 08.01.31 08.03.06 08.03.28 08.04.24 200760 60 60 1/4 100% 86% 100% 100% 08.05.08 ProMOS 100% 08.06.25 Surety bond 100% L/C Line 61 3/4 08.07.30 100% 200mm/300mm 08.08.20 100% 08.09.24 100% 08.10.29 61 3/4 100% 08.12.17 100% 08.12.26 Syndicated Loan 100% 25

Hy-RWS: Hynix Risk Warning System 2004 2007 Hy-RWS HNSL Hy-RWS 16,000 Hy-RWS 22 OA 60 IFIS: Integrated Financial Information System IFIS 6 IFIS HICS: Hynix Internal Control System 2 IFRS: International Financial Reporting Standard CEO Hy-RWS IFIS HICS ERP 26

3 Q1. Q2. Q3. 83.0 81.2 81.2 2007 83.3 2007 73.7 2007 75.2 Q4. Q5. Q6. 82.3 82.8 83.0 2007 67.4 2007 81.0 2007 80.4 Q7. Q8. Q9. Q10. 80.7 80.3 77.3 75.5 2007 74.0 2007 71.5 2007 65.7 2007 65.9 Q11. Q12. Q13. 82.6 82.7 83.9 2007 78.5 2007 78.9 2007 77.1 27

ECONOMIC PERFORMANCE DRAM 19.4%

6,999 (10.8%) 4,995 2007 5.9% 10.8% 2007 (5.9%) 4,017 2006 (5.3%)

(1) (Wafer) (2) Bit-Growth (3) (4) SSDSolid State Disk (5) (Foundry) 6 8,180 DRAM NAND Flash 73% 21% 2007 21% 1 9,201 47,447 M7 M9 200mm FAB 200mm FAB 2006 2006 2007 DRAM 53,687 62,114 49,627 NAND Flash 22,280 21,945 14,457 1,352 2,377 4,096 77,319 86,436 68,180 2006 2007 77,319 86,436 68,180 20,741 5,137-19,201 26.8% 5.9% -28.2% 20,540 3,639-47,447 2006 2007 77,319 86,436 68,180 5,527 6,186 10,360 1,078 1,124 1,291 116 158 178 272 311 405 48 52 83 20,160 22,498 23,569 71 70 91 85 27 9-1,263 987-299 4,017 4,995 6,999 2,021 2,603 4,143 30

2009 200mm FAB 300mm 2009 DRAM NAND DRAM DRAM 2009 2009 200339.5% B/GBit Growth PC DRAM 5444 NAND Flash 41 32.3 DRAM.4 NAND Flash STT RAM.6 SD CIS.7.8 NAND Flash NAND Flash 2009 4 2009 Killer Application NAND 2001 B/G(Bit Growth) NAND Flash SSD (Solid State Drive) 300mm FAB 3 300mm FAB 2 9 M11 108,697 294,637 3 7 5 15 31

(1) 1 (2) Via 2 Metal (3) Fine Pitch Au Bonding Wire 2007 5.9% 10.8% DRAM 54NAND Flash 41 1 1 DRAM(Dynamic Random Access Memory) 51% DRAM 19.4% 2007 21.3% 2006 16.6% 2007 4,995 2006 4,017 6,999 10.8% 5.9% 5.3% isuppli 2005 DRAM 2 2005 DRAM 1 1 3 9 (STT RAM 2012 STT RAM 2012 Deep Via 2006.11~2009.10 28 4 2007.9~2011.8 16 2009 3 6 8 31 DRAM 2007 2006. 12. 31 24% 32% 17% 7% 12% 8% 29% 31% 17% 9% 11% 3% 27% 36% 15% 9% 13% 32

(4) Gb(, Giga bit)10 1 DRAM 256 DRAM 4 (5) Gbps(Giga bit per sec) 1Gbps 1 10 (6) GB(, Giga bytes) 10 1 8 73% DRAM DRAM 73% 2007 11 66 1Gb GDDR5 11 5Gbps 40% 54 7Gbps Digital TV, DVD Player PC DDR2 1066Mbps FBGA(Fine Pitch Ball Grid Array) (IT Convergence) 14% 2009 24% 2007 8 1Gb DRAM 12 54 2Gb DRAM DRAM 2009 24% 14% 2007 7% isuppli 6 VLSI DRAM 44 2009 2 44 1Gb DDR3 DRAM 1 40 2009 DDR2 DDR3 DRAM.01 54 1GB 2GB 1Gb LPDDR2.04 16GB DDR3.08.11 54 1Gb GDDR5 7Gbps.12 54 2Gb LPDDR2 2009.02 44 1Gb DDR3 33

(1) SLC (Single Level Cell) 1 (2) MLC (Multi Level Cell) 2 (3) TLC (Triple Level Cell) 3 (4) SOC(System On Chip) NAND Flash NAND Flash SLC(Single-level Cell) MLC(Multi Level Cell) SLC MLC MP3 Player, PMP, NAND Flash 12.3% 2007 17.1% 2006 17.7% isuppli NAND Flash. 12. 31 NAND Flash 21% NAND FlashDRAM 2004NAND Flash 2005NAND Flash 3 NAND Flash TLC(Triple Level Cell) MLC Bit Growth 2,3 MLC 6 TLC 48 32Gb NAND Flash 30% 12 SOP 8 NAND Flash 2009 41 32 2007 2006 Card 34% 4% MP3 24% USB 36% 2% Card 26% 4% MP3 39% USB 29% 2% Card 32% 2% MP3 31% USB 34% 1% 2001 2002 DRAM Countervailing Duty EU The Council of the European Union 4 7EU DRAM 20071231 EU The European Commission 8 20 DRAM Sunset Review 7 1 90 EU EU WTO WTO 34

CMOS Image Sensor Product, Process, People CMOS Image Sensor CIS SOC CIS 10 1 CIS VGA 7 1 1 11 2009 10 5 CIS ProductProcessPeople TFT - Top-Down - - Value Up Alignment - Bottom-Up - - Cost Down - - - - - 2009 4 TFT Top-Down TPM, TRIZ, DIPS, PI 35

(1) SBMS Strategic Business Management System (2) FP(Factory Planning) (3) SCP(Supply Chain Planning) FP (4) SRM(Supplier Relationship Management) (5) ERP(Enterprise Resource Planning) (6) CRM(Customer Relationship Management) (7) BSC(Balanced Scorecard) (8) TRIZ PI,Process Innovation SCMSupply Chain Management SCM 6 SCM Design-in SBMS MDM 1 2 2009 3 value chain CEO 25 TPM 2009 TPM(Total Productive Maintenance) (Master Plan, Check Sheet) One Shot (Facilitator) Design-in Workflow 2002 TPM 2007 7 TPM TPM TPM 2 TPM FAB & FP, SCP SPEC SRM ERP CRM SCM IFIS BSC 9 4 2007 TRIZ TRIZ 36

(9) DIPS (Double IP System: Increasing Productivity of Intellectual People) 12 7 2009 2 1 DIPS 2009 12 1 2 70 30 2009 2007 7 1 TPM 1 Change Beginner Change Agent Change Expert Change Master 11 65 20 20 25 1 (Cross License) 20 12 2007 2006 399 378 427 445 487 478. 12. 31 1,856 2,428 2,558 DRAM NAND Flash 37

SOCIAL PERFORMANCE

41376 874 22461 2007

TFT Apple, Dell, HP, IBM, Lenovo, Sony, NEC, Fujitsu Toshiba 50 600 3 (Rating) 2.5 1.2 1 (On-site Meeting) 2009 QBR (Quartely Business Review) TQRDC(Technology-Quality- Responsiveness- Delivery- Cost- HyCRM Design-in CFC* CDP : Critical Decision Points CFC : Customer Facing Committee CDP* QTR (Quarterly Technology Review) Design Win Biz Win Market Hit 40

(1) EICC(Electronic Industry Code of Conduct)2004 10 HP, Dell, IBM 8 CCK (Customer Care Kit) EICC (Electronic Industry Code of Conduct) EICC Dell, Nokia, Ericsson, Lenovo, HP, Microsoft, Motorola, Apple, Foxconn, AMD EICC EICC HNSL Audit EICC EICC EICC (Design-in) Self Qualification Program AMD, nvidia, Lenovo, Apple Self Qualification Program 11 (PCN, Process Change Notification) DRAM 54 PCN 90 86 3 41

12 21,457 11,416 5,472 385 4,184 99.9% 5.9 12-1.3% 7.51% 200mm FAB 3 3,300 2,700 2,400 3,132. 12. 31 58.8% 41.0% 0.2%. 12. 31 6,078 4,229 23 10,330 7.4 1,328 9,751 48 11,127 4.4 7,406 13,980 71 21,457 5.9 2006 2007-8,126 51% 9,571 52% 9,090 51% 2.00% 12 0.10% 19 0.10% 18 0.10% 2.00% 64 0.40% 85 0.47% 86 0.48% x100 x100 2006 2007 18.1 14.6-1.3 7.59 6.95 7.51 12.0% 87.6% 0.4% 42

2007 2% 61,577 39 266 1,105 11 4 42 (EOS: Employee Opinion Survey) 3.67 2007 0.34 3.67 5 2006 2007 42,932 60,400 61,577 63 72 66. 12. 31 2007 Strategy 3.75 4 3 2 1 0 2007 3.33 Structure 3.46 58 272 5 28 14 105 107 392 82 308 266 1,105 Outcome 3.76 Culture 3.72 2007 43

6 1 3 1 3 22% 2006 2007 346 528 605 194 316 428 3 25 12 1,300 1. 12. 31 7,226 4,462 7,006 4,418 97% 99% 11 CEO 1 1 Good Morning Talk 16 12 44

(ESH) (ILO) 2 1 10 1 (PSM: Process Safety Management) 2006 2007 10,719 12,187 11,416 4,688 5,488 5,472 HNSL - 2,730 3,765 0.01 0 0 0 0 0 HNSL - 0 0 0.197 0.176 0.169 2 3 08 1830 Walking Day TFT TFT 45

(1) HiSPM(Hynix Supplier Performance Management) (Central Monitoring System) 24 (Headquarters) CMS (8000) Utillity FAB (Emergency Response Team) 46

1 6 29 HiSPM 2009 1 19 11 30 990 2007 2011 5 45 22 IN OUT 8 3 2007 11 5 47

(1) HEINET(Hynix e-procurement Infra Network) 2007 3 3 45 2007 20 14 2006 11 20 2 (.10.09) HEINET 18 2007 9 3 12 2007 3 48

3 (Good Memory) 61 240 1,074 1 7 Hynix Good Memory 2007 1,877 3,073 (2007~) (2009~2010) (2011~2012) CEO SM 49

4 Good Memory 5 1 (Good Memory) 4 14 Good Memory NGO 2 4 1,000 0.5% 50

12 2007 22,500 22,461 48,000 41,376 1 0.26 0.28 0.25 0.20 1 4 4 4 3.9 5,000 5,494 12,000 10,487 6 6.56 6 4.94 2007 8 1996 849 5 14 30 14 11 5 57 29 27 1 87 2009 1 14 5,690 51

ENVIRONMENTAL PERFORMANCE

2005 2007 3580 ton CO2 2007 3625 2006 2825

ESH ESH ISO14001 OHSAS18001, KOSHA18001 ESH ISO14001 OHSAS18001 OHSAS18001 2007 ESH ESH (1) ISO14001 ISO(International Organization for Standardization: ) (2) OHSAS18001 (Occupational Health & Safety Assessment Series) (3) KOSHA18001 (Korea Occupational Safety & Health Agency : ) NGO 6 2 CEO 2009 4 (www.hynix.co.kr) (www.kfem.or.kr) 2009 5 CEO.02. ESH (LCA).03..03..11. CEO.05..06..08..10..11.

(1) (2) PFCs (Per Fluoro Carbons) (3) LNG (Liquefied Natural Gas) (4) MMTCE (Million Metric Tons of Carbon Equivalent) PFCs LNG 2005~2007 ton CO2 3,580 2007 3,625 2006 2,825 (CDP: Carbon Disclosure Project) 2006 10 CDP PFCs PFCs (CDM: Clean Development Mechanism) PFCs MMTCE (CDP: Carbon Disclosure Project) Actual Roadmap 2003 500 50 0.76 0.44 0.51 0.54 0.28 0.22 2005 2006 2007 2009 2010 55

LNG LNG 2007 ISO14064 2006 2007 FAB Wafer 418,258 810,304 891,397 507,010 536,065 619,940 Substrate 57,279 153,357 153,499 Backend PCB 101,500 163,709 167,913 175,319 208,818 285,249 1,259,366 1,872,253 2,117,998 300mm LNG TOE /m 2007 0.90 1.78 0.14 200mm 2007 0.05 2.0 2006 0.05 2007 2.8 LNG 1.055 TOE Test Wafer TOE/m 200mm FAB 200mm 300mm 3.00 0.9% 1.78% 2007 2.73 2006 2.83 0.45 2007 0.53 2006 0.56 0.215 TOE/MWh 0.121 TOE/ton 56

(1) (Scrubber) (2) ISO14064 (3) TOE (TOE, Ton of Oil Equivalent)(IEA) 1 10kcal (4) Backend (5) TC (TC, Ton of Carbon Equivalent) 2005 12 2010 12 (VA: Voluntary Agreement) CO2 2006 2007 (TOE) 4,018 53 93 (MWH) 15,654 2,909 8,202 2,915 57 137 1,751 925 1,123 4,666 982 1,260 (TC ) 6,760 5 9 (TC) 2,320 381 1,075 (TC) 9,080 386 1,084 2006 2007 90.1% 90.8% 90.3% 4,648 3,582 1,694 90% Ton 1,876 2007 3,945 2006 5,159 57

(LCA: Life Cycle Assessment) 2006 2007 DRAM NAND Flash Memory LCA (Eco-design) "Creating more value with less impact" Eco-efficiency Factor EE EE Source Control Eco-efficiency Eco-efficiency Eco-efficiency 1994 (WBCSD: World Business Council for Sustainable Development) Eco-efficiency Ecoefficiency DRAM Main Memory, Graphics Memory, Consumer Memory 3 NAND Flash Memory SLC, MLC 2 Higher Better Lower Better Eco-efficiency M E Hynix Class T Hynix Class Hynix Class I: EU RoHS, Halogen 8 Hynix Class II: 21 58

(1) Mold Compound Epoxy (2) Substrate (3) PCB (Printed Circuit Board) (4) EU REACH (Registration, Evaluation and Authorization of Chemicals)EU 1 Halogen Free BrCl2 Component Mold Compound & Substrate Halogen Free PCB Halogen Free Module - Halogen Free (Br 900ppm, CI 900ppm, Br+CI 1,500ppm) Halogen Free + RoHS compliance Logo 2 (Cobalt dichloride) EU REACH 15 (SVHC,Substances of Very High Concern) 2(Cobalt dichloride) PVC(Polyvinyl chloride) Module Cap Mold Compound, Substrate, PCB Halogen Free Halogen Free 59

(1) RTO(Regenerative Thermal Oxidizer) (2) VOC(Volatile Organic Compound) (3) UPW (Ultra Pure Water) (4) ReclaimFAB ESH 106.3% 61.3% 200mm FAB ESH 2006 2007 7/7 7/7 12/12 3/3 6/8 8/8 19/22 35/37 58/55 ESH 30/35 54/55 62/59 7/7 4/4 2/2 PFCs Emission 11/11 10/10 6/6 Chemical,Gas 16/23 21/26 8/4 ESH 8/8 16/18 12/12 101/116 153/165 168/158 3 2006 2007 3/4 2/3 99 1/2 1/2 1/3 3/3 2/3 10/13 ESH 17/19 20/24 13/20 3/3 0/1 3/3 Chemical,Gas 3/3 2/5 6/8 ESH 8/8 16/19 21/25 38/42 43/57 63/75 18,043 190 398 18,631 2006 717 831 342 1,890 20,096 2,695 131 22,922 2007 374 2,204 6 2,584 5,563 4,205 98 9,866 10,294 24,621 550 35,465 60

SOx 34% 5~7% NOx, Cl2 1% 7 TMS(Tele Metering System) HCl 24 RTO (Regenerative Thermal Oxidizer), VOC (Volatile Organic Compound) 2 20% g/ 2006 2007 (SOx) 0.116 0.118 0.082 (NH3) 0.036 0.03 0.026 (NOx) 0.019 0.012 0.017 (F) 0.003 0.003 0.003 (Cl2) 0.013 0.008 0.008 TFT Wafer 1 25% 5 (MOU) 2007 4 2 1 FAB(M11) 200mm FAB(M9) 300mm FAB(M11) UPW Reclaim Rate UPW Reclaim Rate 3 TFT 200mm FAB g g/ 2006 2007 (SOx) 0 0 0 (NH3) 0.0115 0.0055 0.0024 (F) 0.0052 0.0063 0.0056 61

(1) TMAH (Tetra Methyl Ammonium Hydroxide) (2) TU(Toxic Unit) Water 1 2007 2006 Water 1 2007 5.3 2006 5.1 5.6 6.5 6.3 7.4 2 30~80% Wafer Output x 100 21% 2007 2006 24% 28% T-N COD F 15.0 4.0 1.1 ppm 2007 1.0 7.0 19.0 2007 17,812,756 17,355,889 2006 0.8 5.0 19.0 2006 13,646,776 TMAH 2006 2007 4.0 4.0 5.0 6.0 35.0 36.0 6 TMS 2006 4.0 5.0 26.0 T-N: (Total Nitrogen) COD: (Chemical Oxygen Demand) F: (Fluorine) 62

9 8 91% 2007 6%p 456 342% 10 214 2009 1 2011 2007 10 1TU 2TU X 100 2006 2007 81 85 95 84 83 84 81 85 91 ton 2006 2007 54,810 37,684 26,191 8,331 15,962 17,613 63,141 53,646 43,804 ton 2006 2007 11,770 13,435 12,774 4,746 6,825 7,544 16,516 20,260 20,318 63

12 3,765 (HNSL) 100 17 HYNIX-NUMONYX SEMICONDUCTOR LTD. HNSL

(1) (Numonyx)_ STMicro HNSL HNSL HNSL 2006 4 200mm 8 300mm 12 16.6 12 72.29% HSMC 1.6 9.64% Numonyx) 3 18.07% 3,765 K-7 17 2004. 11 STMicro 2005. 04 2006. 04 200mm 2006. 09 300mm 2006. 10 2007. 06 300mm 2007. 12 7.5. 02 STMicro Numonyx. 03 HNSL (Hynix-Numonyx Semiconductor Ltd.). 11 3 HNSL IPS Materiality Test Model 9 High Medium Low Medium High 65

HNSL HNSL HNSL 2006 4 300 1,050 2006 1,200 2007 1,100 6 (Weekly News of Ethics) 20072 170 250 2007 4 29 1 60 66

HNSL 12 83% 2011 90% 34 1,826 105 3,589 76 1,623 34 2,296 27 81 140 5,119 HNSL 2007 (Future Leader) 198 246 HNSL 2009 2007 7,783 87% 14,534 2007 221 45% 320 HNSL HNSL 2009 104 GWP 2 9 1,700 GWP 08 20 1 300 GWP 07 3 700 08 280 GWP(Great Work Place): 67

HNSL HNSL 15 10 50 40 3 2007 5 HNSL 100 8 500 HNSL 2007 2007 7 8 10 Good memory 11 Good memory 12 1 2 3 4 1 6 8 2 9 11 150 HNSL 5 14 10 7 150 68

(1) _ HNSL 2012 Innovest AAA 2007 2010 2007 2009 2010 ISO14001 & OHSAS18001 PFCs, RoHS ESH ESH PFCs HNSL 2010~2020 HNSL 2009 2010~2020 ton CO2 2006 190 2007 471 480 HNSL 8,049,700Kwh 10,038 10 18,378 HNSL 94%, 2009 3 95% 69

BEST/GRI Guideline Index 3

2007 8 6,436 21% 6 8,180 1 8,256 DRAM 2007 72% 73% NAND Flash 200mm FAB NAND MCP Flash 2007 28% 27% DRAM NAND Flash & 2007 2006-2,000 4,000 6,000 8,000 10,000 2007 6 9,795 5% 7 3,630 3,834 108% 2007 81% 2006 61% - 2,000 4,000 6,000 8,000 10,000 71

2007 1 1,503 20% 1 3,751 2,248 1,768 184 295 20% 2007 13% 2006 12% - 500 1,000 1,500 2,000 11% 2007 2006 6% 7% - 200 400 600 800 1,000 2007 6,186 67% 1 360 4,174 3,534 200mm 1,227 2007 6,697 481% 3 8,905 3 2,208 1,541 1 5,219 200mm 7,800 7,648 EBITDA -28% 13% 2007 6% 33% 2006 27% 47% - 2,000 4,000 6,000 8,000 10,000 72

16 5,762 2007 12 17 7,183 1 1,421 4 4,248 2 7,595 1 6,653 13 8,935 13 8,168 5,232 1 6,653 1 1,754 1,963 2,626 5,232 2,992 200mm 2009 2,390 11 500 2007 12 8 4,040 2 6,460 4 598 5 2,375 1 1,777 4 3,442 5 8,125 1 4,683 1 1,777 6,251 4,970 73

1 4,683 3,542 4,729 6,787 1,053 127% 2007 33% 2006 18% - 2,000 4,000 6,000 8,000 10,000 5 5,262 2007 9 3,143 3 7,881 8.2% 8.0% 6.2% 6.1% 7.5% 4 7,196 1,667 7,128 165,480,000 36.0% 37,742,000 8.2% 36,877,000 8.0% 28,572,000 6.2% 27,979,000 6.1% 34,310,000 7.5% 294,112,790 64.0% 99,613,979 21.7% 53,287,249 11.6% 141,221,562 30.7% 459,602,790 100.0% 64% 74

61 12 31 60 2007 12 31 61 60 2,759,455,207 4,424,775,335 (1) 1,667,351,762 3,418,558,492 1. 526,864,162 1,702,296,793 2. 192,527,546 351,080,156 3. 1,645 1,002,425 4. 760,387,614 956,961,818 (10,018,996) (10,254,631) 5. 69,535,986 78,043,287 (7,477,241) (10,306,971) 6. 97,802,516 47,413,546 7. 8,162,820 270,729,293 8. 29,565,710 31,592,776 (2) 1,092,103,445 1,006,216,843 1. 729,965,840 350,715,121 (287,409,406) (68,226,816) 2. 718,365,547 556,750,475 (299,500,060) (112,577,117) 3. 147,243,663 185,071,838 (791,246) (433,263) 4. 36,426,193 41,998,197 5. 53,360,602 54,388,033 (5,557,688) (1,469,625) 13,816,765,062 13,293,523,497 (1) 301,457,427 27,424,231 1. 4,284,146 1,329,532 2. 23,237,419 11,543,879 3. 1,200 1,650 4. 26,045,322 2,868,335 5. 1,785,633 366,478 (23,603) (8,449) 6. 1,186,849 1,186,849 (1,186,849) (1,186,849) 7. 246,127,310 7,093,174 8. - 4,229,632 (2) 12,362,603,290 12,368,479,692 1. 291,126,321 289,073,229 2. 1,876,830,968 1,926,393,441 (27,624,686) (27,624,686) (326,591,659) (439,865,598) (Continued) 75

61 60 3. 520,055,293 466,976,172 (61,367,240) (3,874,456) (282,073,398) (251,637,856) 4. 21,577,697,965 19,833,848,650 (387,006,879) (63,664,176) (11,275,293,252) (10,245,954,320) 5. 2,695,176 2,475,171 (1,749,682) (1,436,816) 6. 566,686,171 503,656,081 (5,014,343) (2,860,909) (337,188,475) (286,135,436) 7. 231,421,010 669,111,201 (3) 496,407,601 528,979,670 1. 2,083,467,422 2,083,467,422 (1,044,560,703) (1,044,560,703) (612,820,453) (573,184,522) 2. 156,089,339 141,018,077 (86,406,353) (77,984,186) 3. 638,349 223,582 (4) 656,296,744 368,639,904 1. 455,605,419 156,410,217 2. 172,013,951 184,420,772 3. 28,677,374 27,808,915 16,576,220,269 17,718,298,832 5,237,522,160 4,059,806,597 1. 718,727,692 744,541,103 2. 1,554,377,239 929,268,837 3. 730,867,340 1,060,042,551 (26,867,635) (26,136,828) 4. 253,449,130 339,912,038 5. 870,589,804 418,857,971 6. 9,243,521 6,513,358 7. - 223,088 8. 22,875,770 25,675,823 9. 46,348,458-10. 1,058,189,385 596,856,795-81,130,694 (223,386) (3,787,740) (55,158) - (Continued) 76

61 60 - (113,291,093) 5,812,458,610 4,344,163,683 1. 1,348,750,000 992,920,000 (8,197,004) (6,615,250) 2. 1,036,943,300 539,353,300 80,536,000 - (12,365,086) (5,355,015) (187,068,724) (88,839,801) 3. 2,895,344,255 2,210,132,163 (17,593,634) (11,088,090) 4. 290,883,217 302,378,707 (61,584,586) (54,130,362) 5. - 105,339,133 6. 327,285,425 330,521,874 (3,048,575) (3,837,268) (9,410,950) (9,977,930) 7. - 7,279,250 8. 131,984,972 36,082,972 11,049,980,770 8,403,970,280 5,090,202,415 9,045,037,229 2,315,654,175 2,313,783,365 1. 2,315,654,175 2,313,783,365 929,002,856 860,685,334 5,839,683 14,660,920 1. 5,839,683 14,660,920 483,642,719 (219,716,676) 1. (7,646,383) 1,803,683 2. 491,289,102 (221,520,359) 1,356,062,982 6,075,624,286 436,037,084 269,291,323 5,526,239,499 9,314,328,552 16,576,220,269 17,718,298,832 77

61 1 1 12 31 60 2007 1 1 2007 12 31 61 60 6,817,984,885 8,643,565,453 7,362,955,828 6,979,506,824 (544,970,943) 1,664,058,629 1,375,149,242 1,150,343,824 1. 129,085,196 112,401,478 2. 17,839,231 15,822,439 3. 40,481,723 31,112,361 4. 13,437,915 10,336,394 5. 61,604,138 54,173,704 6. 52,240,136 51,505,141 7. 9,059,334 7,034,243 8. 121,687,203 151,947,413 9. 21,496,668 19,706,210 10. 49,962,997 31,516,434 11. 766,967,033 590,131,132 12. 6,623,809 10,732,605 13. 84,663,859 63,924,270 (1,920,120,185) 513,714,805 1,036,049,266 618,602,196 1. 85,256,102 80,395,852 2. 24,431,529 21,604,600 3. 19,381,147 1,997,578 4. 529,143,157 213,733,106 5. 140,884,909 102,931,391 6. 3,602,248 4,479,629 7. 1,648,654 1,194,319 8. 6,314,430-9. 129,526,038 6,834,106 10. 20,665,561-11. 73,378,019 181,001,822 12. 1,817,472 4,429,793 3,890,540,616 669,698,152 1. 414,669,692 260,554,826 2. 2,276,774 2,008,885 3. 766,043,608 175,944,044 4. 984,432,383 52,652,500 5. 1,282,337 - (Continued) 78

61 60 6. 18,947,294 5,838,859 7. 781,003,578 999,947 8. 96,735,364 2,392,220 9. 5,631,755-10. 56,606,769 57,943,082 11. - 12,992,332 12. 150,178,541-13. 584,439,184 84,917,185 14. 28,293,337 13,454,272 (4,774,611,535) 462,618,849 (29,887,227) 98,705,110 (4,744,724,308) 363,913,739 (4,719,632,924) 346,295,480 (25,091,384) 17,618,259 (10,273) 754 (10,273) 754 79

ECONOMIC PERFORMANCE 2009 100 DRAM 20% 4~5% 10.8% IMD 7 GDP R&D 5 20 80

SOCIAL PERFORMANCE 2009 2 GRI G3 BEST 1 (EICC) CSR 99.9% 3 CEO HEINET 61 240 (MDG) 81

ENVIRONMENTAL PERFORMANCE 2009 (Economic performance) (Social performance) (Environmental performance) PFC 2007 40% 2007 4.9% (Stability of system) (Resistance) (Resilience) (Sustaining management) (Sustainable management) Sutainability Management 82

2 4 83

BEST GRI Guideline Index BEST GRI A A_1 CEO 1.1 8~9 A_2 1.2 31~32 A_3 2.1 C1, 10 A_4 2.2 2~5, 32~35 A_5 2.3 10 A_6 3.8 11 A_7 2.4/2.5 10~11 A_8 2.6 24 A_9 2.7 31~32 A_10 2.8 10 A_11 4.13 90 B B_1 3.6 C2 B_2 3.7 C2 B_3 3.1 C2 B_4 3.5 C2 B_5 3.11 C2 B_6 3.3 C2 B_7 3.13 C2 B_8 2.9/3.2 C2 B_9 3.4 C2 B_10 BEST 3.12 84~87 C C_1 4.14/4.15 16~17 C_2 4.14/4.16/SO1 17 C_3 4.17 27 D D_1-19 D_2-19 D_3-19 EC EC1 EC1 30 EC2 EC2 55 EC3 EC3 44 EC4 EC6/EC7 42, 67 EC5 EC4 32 EC6 EC8 45~47,49~51,55, 58~59 EC7 EC9 30 EC8-10, 27 EC9-35~37 EC10-37 EC_DMA DMA 19 84

BEST GRI GR GR1 4.1/4.2 24~25 GR2 4.3 24 GR3 4.2 24~25 GR4 4.7 24 GR5 4.9 25 GR6 4.10 14~15 GR7 4.5 25 GR8-24~25 GR9-24 GR10 4.8/4.12 83 GR11 4.11 26 GR12 4.4 87 GR13 4.6 24 EM EM1 LA1 42 EM2 LA13 42 EM3 LA14 42 EM4 EC5 42 EM5 LA2 42 EM6-42 EM7 HR4 42 EM8 HR5 44 EM9 HR6 42 EM10 HR7 42 EM11-44 EM12 LA4 44 EM13 LA5 44 EM14 LA6 45 EM15 LA9 45 EM16-41, 45 EM17 ILO LA14 45 EM18 LA8 45 EM19 LA7 45 EM20 LA3 44 EM21-45 EM22-42, 45 EM23-20 EM24-44 EM25-20 EM26-21~22 EM27 LA10 43 EM28 LA11 43 EM29 LA12 43 EM30 HR3 22 EM31 HR8 22 EM32-44 EM_DMA - 19 EM_DMA2-19 85

BEST GRI PN PN1-47 PN2 HR1 47 PN3 HR2 47 PN4-22, 47 PN5-48 CS CS1-17, 40 CS2-41 CS3 SO7 23 CS4 PR1 58 CS5 PR3 40, 41 CS6-40, 41 CS7-31~37 CS8-58, 59 CS9 PR5 40~41 CS10-87 CS11 PR2 41 CS12 PR4/PR9 41 CS13 PR6 41 PR7 41 PR8 N/A 87 CS_DMA - 19 CO CO1 SO1 49 CO2 HR9/SO1 49 CO3-51 CO4-49~51 CO5 SO2/SO3/SO4 87 CO6 SO5 87 CO7 SO6 87 CO8 2.10 90 CO9 SO8 87 CO_DMA - 19 EV01 EV1 EN30 60 EV2-60~62 EV3-60 EV4 EN18 55 EV5 EN5/EN6/EN7 57 EV6 EN14 62 EV02 EV7 EN3 56 EV8 EN4 56 EV9 EN8 61~62 EV10 EN1 56 EV11 EN2 56 EV03 EV12 EN16 55, 69 EV13 CO2,CH4,N2O,HFCs,PFCs,SF6 EN17 55, 69 EV14 EN19 87 86

BEST GRI EV15 NOx, SOx EN20 61 EV16 EN22 63 EV17 EN21 62 EV18 EN10 62 EV19 EN25 61, 62 EV20 EN9 61 EV21 EN23 87 EV22 EN11/EN12 63 EV23 EN26 58, 59 EV24 EN27 63 EV25 EN7 57 EV26 EN12/EN14 63, 68 EV27 EN13 N/A 87 EV28 EN15 N/A 87 EV29 EN24 87 EV30 EN29 57 EV31 EN28 87 EV_DMA - 19 BEST BEST GR3 GR12 GR13 CS10 CO5 CO6 CO7 CO9 EV14 2007 EV21 EV31 BEST BEST CS15 N/A EV27 EV28 EV29 N/A N/A 87

(IPS: The Institute for Industrial Policy Studies) 1993 2002 6 2009 3 2009 (Independence) (Objective) * AA1OOOAS(Assurance Standard): AccountAbility 1999 ** BEST (BEST Sustainability Reporting guidelines): *** GRI 1997 (CERES) (UNEP) 200610 G3 (Criteria) AA1000Assurance Standard(2003)* BEST ** GRI G3 *** (Scope and Work Undertaken) (1) (2)GRI/ BEST 2009 3 24 88

(Conclusions) Q. (Materiality) A. Q. (Completeness) A. Q. (Responsiveness) A. BEST BEST 4 4 98.5% (Recommendations) (1) (2) (3) 2009 3 30 89

(14) CFO (36) WSTS SM CIO SCM CIO CIO Roundtable JEDEC MMCA USB-IF SDA SiWEDS SoC IMAPS EPRC9 SATA-IO Core Member MATRIZ TIM (KSA) (13).04.21.05.01.05.19.05.29.06.26.10.29 4.10.30 3.11.04 5.11.13.11.20 34.12.03 5.12.10.12.19.12.22 90

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